Abstract: Provided is a lens optical system. The lens optical system includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, and a sixth lens sequentially arranged in the stated order between an object and an image sensor. The first lens, the third lens, and the fifth lens have a positive (+) power, and the second lens, the fourth lens, and the sixth lens have a negative (?) power.

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

Abstract: An imaging apparatus and a control method thereof are provided. The method for controlling the imaging apparatus includes acquiring images having a same focal length by performing continuous imaging in a predetermined time when a user's imaging command is input, calculating motion vectors using the images and separating a foreground and a background of a first image among the images based on the calculated motion vectors and color information of the first image, and performing out focusing based on the separated foreground and the separated background.

Abstract: A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 3 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 3 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 3 element.

Abstract: A stapling apparatus includes a stapler, a driver to move the stapler, and a guide part to define a moving path along which the stapler is to move in response to selection of the moving path among a plurality of moving paths along which the stapler is movable.

Abstract: A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.

Abstract: An electronic device is provided. The electronic device includes a housing, a touch screen display that includes a first edge and a second edge, a microphone, at least one speaker, a wireless communication circuit, a memory, and a processor operably connected with the touch screen display, the microphone, the at least one speaker, the wireless communication circuit, and the memory. The processor is configured to output a home screen including a plurality of application icons in a matrix pattern. The processor is configured receive an input from the first edge to the second edge. The processor is configured output a user interface on the touch screen display that includes a button that allows user to call a first operation and a plurality of cards. To call the first operation the processor is configured to receive a user input, transmit data and receive a response, and perform a task.

Abstract: Provided is a method for applying filters for dental CT imaging, including: acquiring the dental CT imaging using a dental CT apparatus; extracting an artifact region from the acquired image; applying a first filter to a region other than the artifact region in the acquired image; and outputting the dental CT imaging to which the filter is applied. Dental CT imaging is provided without an artifact region to assist in medical treatment. More specifically, the dental CT imaging without the artifact region around the metal or tooth is able to be provided to assist in dental treatment. Further, the dental CT imaging without a white artifact region is able to be provided at a boundary portion of field of view (FOV) to assist in dental treatment.

Abstract: An electric contact terminal configured to be forcibly inserted into an accommodation recess formed in a surface of an electrically conductive object and thus be reliably mounted on the electrically conductive object. The electric contact terminal includes: a metal body having a flat surface on at least an upper side thereof; and at least two projections protruding from a lateral side of the body, wherein the projections are sized such that the projections are placed on an edge of the accommodation recess.

Abstract: A chalcogenide material and an electronic device are provided. The chalcogenide material may include 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic and 40-50 at % of selenium. The electronic device may include a semiconductor memory device, the semiconductor memory device including a first memory cell that includes a first switching element. The first switching element may include a chalcogenide material including 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic, and 40-50 at % of selenium.

Abstract: Disclosed is a photographic optical lens system. The disclosed photographic optical lens system includes a stop, a lens group including at least one aspherical lens, and an image sensor configured to record an image transmitted through the lens group, wherein the photographic optical lens system satisfies the following Expression: 0.15?(DL1-L2)/OAL?0.4??<Expression> where DL1-L2 in Expression denotes a distance from a center of a first surface of a lens closest to an object (hereinafter, referred to as a first lens) to a center of a second surface of a second lens arranged directly next to the first lens, and OAL denotes a distance (a total length of the lens group) from the center of the first surface of the first lens to a center of a second surface of a lens arranged farthest from the object.

Abstract: Provided is a photographing lens optical system. The lens optical system includes a first lens, a second lens, a third lens, a fourth lens, and a fifth lens sequentially arranged from an object to an image sensor. The first lens may have a negative (?) refractive power and have an exit surface that is concave with respect to the image sensor. The lens optical system may satisfy at least one of a condition 100°<FOV<200° and a condition 1<TTL/ImgH<2. Herein, FOV denotes an angle of view of the lens optical system, TTL denotes a distance from an incidence surface of the first lens to the image sensor, and ImgH denotes a diagonal length of a maximum pixel region of the image sensor.

Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

Abstract: The present invention provides a semiconductor integrated circuit for detecting leakage current to determine whether an electric leakage occurs in an electric line based on an induced voltage input from a leakage current detection unit 20 installed in the electric line, and an earth, leakage circuit breaker having the semiconductor integrated circuit. A semiconductor integrated circuit 100 for detecting leakage current includes: a signal amplification unit 110 configured to amplify the induced voltage; an interruption determination unit 130 configured to compare an output voltage output from the signal amplification unit with a preset reference voltage, and output an interruption signal for interrupting a power supply to the electric line; a flare current stabilization (FCS) circuit 150 for a signal amplification unit connected to the signal amplification unit; and a flare current stabilization (FCS) circuit 170 for an interruption determination unit connected to the interruption determination unit.

Abstract: An object of the present disclosure is to restore a quantization error of an image signal only by expanding the number of bits of a reconstructed image compared to the number of bits of an input image without expanding the number of bits in an image signal processing process. An image display apparatus may include a signal inputter configured to receive an input image signal; an image signal processor configured to perform image processing of the input image signal, to identify a type of image processing by comparing the input image signal and the processed image signal, to obtain restoration information of the processed image signal according to the identified image processing type, and to restore an error of the processed image signal by performing remapping of the processed image signal using the restoration information; and an outputter configured to output the image signal in which the error is restored.

Abstract: The present invention relates to a dropper-type cosmetic container, which is configured so that in a process of releasing screw-coupling to a container main body by rotating a closing cap, by frictional force between an inner circumferential surface of a content inflow tube and an outer circumferential surface of a dropper pipe, the contents stored in the container main body pass through a content inflow hole forming a narrow channel, are dispersed, and are sucked into the dropper pipe, thereby allowing the contents to be drawn into the interior of the dropper pipe through a simple sucking structure to be used.

Abstract: Disclosed is an LCD device which realizes decreased thickness, simplified process, and decreased cost by using a common electrode for formation of electric field to drive liquid crystal as a sensing electrode, and removing a touch screen from an upper surface of the liquid crystal panel, the LCD device comprising gate and data lines crossing each other to define plural pixels on a lower substrate; a pixel electrode in each of the plural pixels; plural common electrode blocks patterned at the different layer from the pixel electrode, wherein the common electrode blocks, together with the pixel electrode, forms an electric field, and senses a user's touch; and plural sensing lines electrically connected with the common electrode blocks, wherein, if the sensing line is electrically connected with one of the common electrode blocks, the sensing line is insulated from the remaining common electrode blocks.