Abstract: A semiconductor memory device includes a memory cell interposed between a first electrode and a second electrode, and configured with a chalcogenide layer that includes three or more components, and a peripheral circuit for providing the memory cell with a program pulse inducing a compositional gradient in the chalcogenide layer.

Abstract: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a chamber having a processing space in which substrate processing is performed therein, one or more exhaust lines connected to the chamber and configured to discharge a processing fluid from the processing space to an outside of the chamber, a supporting chuck disposed in the processing space, configured to support the substrate from below so that the substrate is disposed on an upper portion of the supporting chuck, and having an inner space configured to accommodate a first processing fluid, and one or more first supply lines configured to receive the first processing fluid from the outside of the chamber and transfer the first processing fluid to the inner space of the supporting chuck. In addition, various embodiments may be possible.

Abstract: An integrated circuit chip includes a substrate on which a standard cell is disposed. The integrated circuit chip includes a plurality of power bumps including a plurality of first power bumps and a plurality of second power bumps, the plurality of power bumps. disposed to have a staggered arrangement in a central region of one surface of the integrated circuit chip, and connected to provide power to the standard cell; a first metal wiring disposed below the plurality of first power bumps and electrically connected to the plurality of first power bumps, at least a part of the first metal wiring overlapping the plurality of first power bumps from a plan view; and a second metal wiring horizontally separated from the first metal wiring, disposed below the plurality of second power bumps, and electrically connected to the plurality of second power bumps, at least a part of the second metal wiring overlapping the plurality of second power bumps from the plan view.

Abstract: A power supply control structure of an umbrella, having an umbrella body and a power supply device, the umbrella body has a shaft, a notch at the upper end of the shaft, a runner movably sleeving the shaft, and a rib assembly hinged with the notch and the runner; the power supply device is positioned on an upper part of the umbrella body. Accordingly, a conductive connecting piece for connecting the power supply device and an electronic device on the upper part of the umbrella body is minimally limited by the shaft so that installation position of the conductive connecting piece can be simpler and more convenient.

Abstract: A semiconductor process chamber includes a susceptor, a base plate surrounding the susceptor, a liner on an inner sidewall of the base plate, and a preheat ring between the susceptor and the base plate and coplanar with the susceptor. The process chamber further includes an upper dome coupled to the base plate and covering an upper surface of the susceptor. The upper dome includes a first section on an upper surface of the base plate and a second section extending from the first section and overlapping the susceptor. The first section includes a first region on the upper surface of the base plate, a second region extending from the first region past the base plate, and a third region extending from the second region with a decreasing thickness to contact the second section.

Abstract: Disclosed is an LCD device which realizes decreased thickness, simplified process, and decreased cost by using a common electrode for formation of electric field to drive liquid crystal as a sensing electrode, and removing a touch screen from an upper surface of the liquid crystal panel, the LCD device comprising gate and data lines crossing each other to define plural pixels on a lower substrate; a pixel electrode in each of the plural pixels; plural common electrode blocks patterned at the different layer from the pixel electrode, wherein the common electrode blocks, together with the pixel electrode, forms an electric field, and senses a user's touch; and plural sensing lines electrically connected with the common electrode blocks, wherein, if the sensing line is electrically connected with one of the common electrode blocks, the sensing line is insulated from the remaining common electrode blocks.

Abstract: This disclosure provides methods for producing neutrophils under serum-free and feeder-free conditions from protein tyrosine phosphatase 1B (PTP1b)-inhibited pluripotent stem cells. The disclosure further provides PTP1b inhibited neutrophils and uses thereof. Also disclosed are methods for producing human neutrophil-DC hybrid cells and human neutrophil-DC hybrid cells produced thereby.

Abstract: A liquid dispenser, such as a water purifier, in one embodiment includes a water discharger connector provided with a water discharge valve configured to control discharge of purified water and a water discharge pipe connected to the water discharge valve, and a water discharger coupled to an upper side of the water discharger connector, and provided with a connector part that connects to the water discharge pipe based on fitted-coupling.

Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More specifically, the growth inhibitor for forming a thin film of the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. In Chemical Formula 1, A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

Abstract: A container includes: a container part adapted to store a material therein and having a discharge part disposed on one side thereof to discharge the material therefrom; and a sliding cap coupled to top of the container part and moving a space between a first position for blocking the discharge part from the outside and a second position for exposing the discharge part to the outside according to external forces applied in different directions, wherein the container part and the sliding cap each have at least one or more magnetic members adapted to fix the sliding cap to the first position or the second position and help the sliding cap move, if the external force greater than a given level is applied to the sliding cap, in a direction to which the external force is applied.

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a surface agent of the Formula (I). where A and B are each independently hydrogen, optionally substituted alkyl or optionally substituted aryl; X and Y are each independently hydrogen, optionally substituted alkyl or optionally substituted carbocyclic aryl; and n is a positive integer. Preferred coating compositions can provide improved pattern collapse margin of an overcoated photoresist layer.

Abstract: The present invention relates to a composition for preventing, improving, or treating inflammatory disease containing isookanin or a salt thereof as an active ingredient. The composition containing the isookanin or salt thereof as an active ingredient according to the present invention has no skin irritation and cytotoxicity, and thus has excellent safety for the human body. In addition, it has excellent effects on the inhibition of JAK1 activity, kallikrein-5 activity, TLR-2 activation, COX-2 expression and activity, prostaglandin PGE2 production, and PGE2-induced angiogenesis, and thus is very effective in preventing, alleviating and treating inflammatory disease. Accordingly, the composition containing the isookanin or salt thereof as an active ingredient according to the present invention may be useful as an active ingredient in a cosmetic composition, a pharmaceutical composition, a composition for skin application and a quasi-drug composition for preventing, alleviating or treating inflammatory disease.

Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More particularly, the growth inhibitor for forming a thin film according to the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is a leaving group having a bond dissociation energy of 50 to 350 KJ/mol; Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

Abstract: A substrate processing system, according to one embodiment, comprises: a cleaning device, positioned at a first position, for performing a cleaning process for a substrate; a drying device, positioned at a second position, for performing a drying process for the substrate; and a transfer unit for transferring the substrate from the cleaning device to the drying device, wherein the first position and the second position may be vertically arranged.

Abstract: The present invention relates to a growth inhibitor for forming a pellicle-protective thin film, a method of forming a pellicle-protective thin film using the growth inhibitor, and a mask fabricated by the method. More particularly, the growth inhibitor for forming a pellicle-protective thin film according to the present invention is a compound presented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

Abstract: Disclosed is an LCD device which realizes decreased thickness, simplified process, and decreased cost by using a common electrode for formation of electric field to drive liquid crystal as a sensing electrode, and removing a touch screen from an upper surface of the liquid crystal panel, the LCD device comprising gate and data lines crossing each other to define plural pixels on a lower substrate; a pixel electrode in each of the plural pixels; plural common electrode blocks patterned at the different layer from the pixel electrode, wherein the common electrode blocks, together with the pixel electrode, forms an electric field, and senses a user's touch; and plural sensing lines electrically connected with the common electrode blocks, wherein, if the sensing line is electrically connected with one of the common electrode blocks, the sensing line is insulated from the remaining common electrode blocks.

Abstract: An apparatus that detects a rotor input is provided. The apparatus includes a rotor comprising at least a portion which is configured to rotate around an axis of rotation; a reactance element disposed in the rotor, a sensing medium member disposed in the rotor, and a motion conversion member configured to move in the rotor based on a rotation of the portion of the rotor, and configured to move together with the sensing medium member to change a reactance of the reactance element according to the rotation of the portion of the rotor.

Abstract: A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 13 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 13 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 13 element.

Abstract: The substrate processing device according to one embodiment may comprise: a chamber unit provided with a processing space therein and comprising an inclined chamber surface having an opening; a door unit comprising an inclined door surface, which corresponds to the inclined chamber surface, and capable of being coupled to the chamber unit; and a door driving unit for driving the door unit so as to open/close the processing space.