Abstract: An image sensor includes a first substrate structure, which includes a first substrate having a photoelectric converter and a first wiring structure therein. The first wiring structure includes upper connection wiring, which is electrically connected to the photoelectric converter, a first upper bonding pad and a second upper bonding pad. A second substrate structure is provided, which includes a second substrate and a second wiring structure bonded to the first wiring structure. The second wiring structure includes: lower connection wiring, which is electrically connected to the upper connection wiring, a first lower bonding pad, which is directly connected to the first upper bonding pad, and a second lower bonding pad, which is directly connected to the second upper bonding pad. A width of the first upper bonding pad is unequal to a width of the second upper bonding pad, and a thickness of the first upper bonding pad is unequal to a thickness of the second upper bonding pad.

Abstract: An image sensor includes: a substrate including a first surface and a second surface on which light is incident, the second surface being opposite to the first surface; a photoelectric converter provided in the substrate; a first metal layer provided on the first surface of the substrate; a second metal layer provided on the first metal layer; and a capacitor layer provided between the first metal layer and the second metal layer, wherein the capacitor layer includes: a first lower electrode electrically connected to the first metal layer, a first upper electrode electrically connected to the second metal layer, a second upper electrode spaced apart from the first upper electrode and electrically connected to the second metal layer, a first capacitor provided between the first lower electrode and the first upper electrode, and a second capacitor provided between the first lower electrode and the second upper electrode.

Abstract: Image sensors are provided. The image sensor may include a substrate including a first surface and a second surface opposite the first surface, a photoelectric conversion layer in the substrate, and a lower capacitor connection pattern on the first surface of the substrate. The second surface of the substrate may be configured to receive incident light. The lower capacitor connection pattern may include a capacitor region and a landing region protruding from the capacitor region. The image sensors may also include a capacitor structure including a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the capacitor region, a first wire on the capacitor structure and connected to the second conductive pattern, and a second wire connected to the landing region. The first conductive pattern may be connected to the lower capacitor connection pattern.

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

Abstract: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

Abstract: An image sensor includes: a substrate including a first surface and a second surface on which light is incident, the second surface being opposite to the first surface; a photoelectric converter provided in the substrate; a first metal layer provided on the first surface of the substrate; a second metal layer provided on the first metal layer; and a capacitor layer provided between the first metal layer and the second metal layer, wherein the capacitor layer includes: a first lower electrode electrically connected to the first metal layer, a first upper electrode electrically connected to the second metal layer, a second upper electrode spaced apart from the first upper electrode and electrically connected to the second metal layer, a first capacitor provided between the first lower electrode and the first upper electrode, and a second capacitor provided between the first lower electrode and the second upper electrode.

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: Image sensors are provided. The image sensor may include a substrate including a first surface and a second surface opposite the first surface, a photoelectric conversion layer in the substrate, and a lower capacitor connection pattern on the first surface of the substrate. The second surface of the substrate may be configured to receive incident light. The lower capacitor connection pattern may include a capacitor region and a landing region protruding from the capacitor region. The image sensors may also include a capacitor structure including a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the capacitor region, a first wire on the capacitor structure and connected to the second conductive pattern, and a second wire connected to the landing region. The first conductive pattern may be connected to the lower capacitor connection pattern.

Abstract: A semiconductor device has a semiconductor chip region which contains a semiconductor chip and a first portion of a passivation film covering the semiconductor chip and a scribe line region which contains a second portion of the passivation film connected to the first portion of the passivation film, a first insulating film protruding from a distal end of the second portion of the passivation film, and at least a part of a first wiring. A first portion of the first insulating film is disposed along the distal end of the second portion of the passivation film, a second portion of the first insulating film protrudes laterally beyond the first portion of the first insulating film, and the first wiring protrudes laterally beyond the second portion of the first insulating film.

Abstract: Disclosed are an electrochromic device and a manufacturing method therefor. The disclosed electrochromic device may comprise: a first electrochromic layer made of a first electrochromic agent; and a second electrochromic layer located on at least one surface of the first electrochromic layer and made of at least one of a second electrochromic derivative and a second electrochromic agent.

Abstract: Image sensors are provided. The image sensor may include a substrate including a first surface and a second surface opposite the first surface, a photoelectric conversion layer in the substrate, and a lower capacitor connection pattern on the first surface of the substrate. The second surface of the substrate may be configured to receive incident light. The lower capacitor connection pattern may include a capacitor region and a landing region protruding from the capacitor region. The image sensors may also include a capacitor structure including a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the capacitor region, a first wire on the capacitor structure and connected to the second conductive pattern, and a second wire connected to the landing region. The first conductive pattern may be connected to the lower capacitor connection pattern.

Abstract: An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.

Abstract: A method of determining a quantization parameter includes determining an adjustment range of a quantization parameter correction value based on a size of a motion area of an input image, calculating an average bitrate value of the input image, and adjusting the quantization parameter correction value by decreasing the quantization parameter correction value within the adjustment range in response to determining that the average bitrate value is greater than an upper limit value, and by increasing the quantization parameter correction value within the adjustment range in response to determining that the average bitrate value is equal to or less than a lower limit value.

Abstract: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

Abstract: An image sensor includes a first substrate structure, which includes a first substrate having a photoelectric converter and a first wiring structure therein. The first wiring structure includes upper connection wiring, which is electrically connected to the photoelectric converter, a first upper bonding pad and a second upper bonding pad. A second substrate structure is provided, which includes a second substrate and a second wiring structure bonded to the first wiring structure. The second wiring structure includes: lower connection wiring, which is electrically connected to the upper connection wiring, a first lower bonding pad, which is directly connected to the first upper bonding pad, and a second lower bonding pad, which is directly connected to the second upper bonding pad. A width of the first upper bonding pad is unequal to a width of the second upper bonding pad, and a thickness of the first upper bonding pad is unequal to a thickness of the second upper bonding pad.

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

Abstract: The present disclosure relates to a lead-free solder alloy composition in which a nanosized ceramic powder additive is added to a lead-free solder alloy of Sn—Cu—Bi, Sn—Ag—Bi or Sn—Ag—Cu—Bi, and a method for preparing the same.