Patents by Inventor Innocenzo Tortorelli

Innocenzo Tortorelli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11735276
    Abstract: Methods, systems, and devices for programming techniques for polarity-based memory cells are described. A method may include writing memory cells to an intermediate state based on receiving a write command. Writing the intermediate state may include applying a first pulse having a first polarity to the memory cell. The method may include isolating a first access line coupled with the memory cell from a voltage source based on applying the first pulse. The method may also include applying a second pulse to a second access line coupled with the memory cell based on isolating the first access line.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: August 22, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Alessandro Sebastiani, Innocenzo Tortorelli
  • Patent number: 11735261
    Abstract: Methods, systems, and devices for programming enhancement in memory cells are described. An asymmetrically shaped memory cell may enhance ion crowding at or near a particular electrode, which may be leveraged for accurately reading a stored value of the memory cell. Programming the memory cell may cause elements within the cell to separate, resulting in ion migration towards a particular electrode. The migration may depend on the polarity of the cell and may create a high resistivity region and low resistivity region within the cell. The memory cell may be sensed by applying a voltage across the cell. The resulting current may then encounter the high resistivity region and low resistivity region, and the orientation of the regions may be representative of a first or a second logic state of the cell.
    Type: Grant
    Filed: December 7, 2021
    Date of Patent: August 22, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Andrea Redaelli, Agostino Pirovano, Innocenzo Tortorelli, Fabio Pellizzer
  • Publication number: 20230260581
    Abstract: Methods, systems, and devices for techniques for operating a vertical memory architecture are described. A memory device may include memory cells arranged in a three-dimensional vertical memory architecture. Each memory cell may include a storage element (e.g., a chalcogenide material), where a logic state may be programmed at the storage element based on a polarity of an applied voltage that exceeds a threshold voltage. The storage element may be coupled with a selection element and a conductive line. The selection element may be coupled with a bit line decoder and a word line decoder via vertical pillars. The selection element may selectively couple the storage element with the bit line decoder. In some examples, an activation voltage for the selection element may be less than a threshold voltage of the storage element.
    Type: Application
    Filed: February 15, 2022
    Publication date: August 17, 2023
    Inventors: Agostino Pirovano, Fabio Pellizzer, Innocenzo Tortorelli
  • Patent number: 11729999
    Abstract: Methods, systems, and devices for a capacitive pillar architecture for a memory array are described. An access line within a memory array may be, include, or be coupled with a pillar. The pillar may include an exterior electrode, such as a hollow exterior electrode, surrounding an inner dielectric material that may further surround an interior, core electrode. The interior electrode may be maintained at a voltage level during at least a portion of an access operation for a memory cell coupled with the pillar. Such a pillar structure may increase a capacitance of the pillar, for example, based on a capacitive coupling between the interior and exterior electrodes. The increased capacitance may provide benefits associated with operating the memory array, such as increased memory cell programming speed, programming reliability, and read disturb immunity.
    Type: Grant
    Filed: May 3, 2022
    Date of Patent: August 15, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Innocenzo Tortorelli, Fabio Pellizzer
  • Patent number: 11705199
    Abstract: The present disclosure includes apparatuses and methods for programming memory cells using asymmetric current pulses. An embodiment includes a memory having a plurality of self-selecting memory cells, and circuitry configured to program a self-selecting memory cell of the memory by applying a first current pulse or a second current pulse to the self-selecting memory cell, wherein the first current pulse is applied for a longer amount of time than the second current pulse and the first current pulse has a lower amplitude than the second current pulse.
    Type: Grant
    Filed: January 3, 2022
    Date of Patent: July 18, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Mattia Robustelli, Innocenzo Tortorelli, Richard K. Dodge
  • Publication number: 20230207002
    Abstract: Methods, systems, and devices for a cross-point pillar architecture for memory arrays are described. Multiple selector devices may be configured to access or activate a pillar within a memory array, where the selector devices may each be or include a chalcogenide material. A pillar access line may be coupled with multiple selector devices, where each selector device may correspond to a pillar associated with the pillar access line. Pillar access lines on top and bottom of the pillars of the memory array may be aligned in a square or rectangle formation, or in a hexagonal formation. Pillars and corresponding selector devices on top and bottom of the pillars may be located at overlapping portions of the pillar access lines, thereby forming a cross point architecture for pillar selection or activation. The selector devices may act in pairs to select or activate a pillar upon application of a respective selection voltage.
    Type: Application
    Filed: January 10, 2022
    Publication date: June 29, 2023
    Inventors: Innocenzo Tortorelli, Fabio Pellizzer, Mattia Robustelli, Alessandro Sebastiani
  • Patent number: 11637145
    Abstract: Methods, systems, and devices for multi-component cell architectures for a memory device are described. A memory device may include self-selecting memory cells that include multiple self-selecting memory components (e.g., multiple layers or other segments of a self-selecting memory material, separated by electrodes). The multiple self-selecting memory components may be configured to collectively store one logic state based on the polarity of a programming pulse applied to the memory cell. The multiple memory component layers may be collectively (concurrently) programmed and read. The multiple self-selecting memory components may increase the size of a read window of the memory cell when compared to a memory cell with a single self-selecting memory component. The read window for the memory cell may correspond to the sum of the read windows of each self-selecting memory component.
    Type: Grant
    Filed: March 24, 2021
    Date of Patent: April 25, 2023
    Assignee: Micron Technology, Inc.
    Inventor: Innocenzo Tortorelli
  • Publication number: 20230114966
    Abstract: Methods, systems, and devices for analog storing information are described herein. Such methods, systems and devices are suitable for synaptic weight storage in electronic neuro-biological mimicking architectures. A memory device may include a plurality of memory cells each respective memory cell in the plurality of memory cells with a respective programming sensitivity different from the respective programming sensitivity of other memory cells in the plurality. Memory cells may be provided on different decks of a multi-deck memory array. A storage element material of a respective memory cell may have a thickness and/or a composition different from another thickness or composition of a respective storage element material of another respective memory cell on a different deck in the multi-deck memory array.
    Type: Application
    Filed: January 28, 2020
    Publication date: April 13, 2023
    Inventors: Mattia Boniardi, Innocenzo Tortorelli
  • Patent number: 11615844
    Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: March 28, 2023
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Innocenzo Tortorelli, Stephen Tang, Christina Papagianni
  • Patent number: 11600665
    Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material.
    Type: Grant
    Filed: October 13, 2020
    Date of Patent: March 7, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Fabio Pellizzer, Innocenzo Tortorelli, Roberto Somaschini, Cristina Casellato, Riccardo Mottadelli
  • Publication number: 20230058092
    Abstract: An example apparatus can include a memory array and a memory controller. The memory array can include a first portion including a first plurality of memory cells. The memory array can further include a second portion including a second plurality of memory cells. The memory controller can be coupled to the first portion and the second portion. The memory controller can be configured to operate the first plurality of memory cells for short-term memory operations. The memory controller can be further configured to operate the second plurality of memory cells for long-term memory operations.
    Type: Application
    Filed: October 31, 2022
    Publication date: February 23, 2023
    Inventors: Mattia Boniardi, Innocenzo Tortorelli
  • Patent number: 11587612
    Abstract: In an example, an apparatus can include an array of variable resistance memory cells and a neural memory controller coupled to the array of variable resistance memory cells and configured to apply a sub-threshold voltage pulse to a variable resistance memory cell of the array to change a threshold voltage of the variable resistance memory cell in an analog fashion from a voltage associated with a reset state to effectuate a first synaptic weight change; and apply additional sub-threshold voltage pulses to the variable resistance memory cell to effectuate each subsequent synaptic weight change.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: February 21, 2023
    Assignee: Micron Technology, Inc.
    Inventor: Innocenzo Tortorelli
  • Patent number: 11587979
    Abstract: The present disclosure includes three dimensional memory arrays, and methods of processing the same. A number of embodiments include a plurality of conductive lines separated from one other by an insulation material, a plurality of conductive extensions arranged to extend substantially perpendicular to the plurality of conductive lines, and a storage element material formed around each respective one of the plurality of conductive extensions and having two different contacts with each respective one of the plurality of conductive lines, wherein the two different contacts with each respective one of the plurality of conductive lines are at two different ends of that respective conductive line.
    Type: Grant
    Filed: January 8, 2021
    Date of Patent: February 21, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Innocenzo Tortorelli, Agostino Pirovano, Andrea Redaelli
  • Publication number: 20230034787
    Abstract: Methods, systems, and devices for programming techniques for polarity-based memory cells are described. A memory device may use a first type of write operation to program one or more memory cells to a first state and a second type of write operation to program one or more memory cells to a second state. Additionally or alternatively, a memory device may first attempt to use the first type of write operation to program one or more memory cells, and then may use the second type of write operation if the first attempt is unsuccessful.
    Type: Application
    Filed: August 10, 2022
    Publication date: February 2, 2023
    Inventors: Innocenzo Tortorelli, Mattia Boniardi, Mattia Robustelli
  • Publication number: 20230029529
    Abstract: A semiconductor device includes first conductive lines extending in a first direction, second conductive lines extending in a second direction, memory cells disposed between the first conductive lines and the second conductive lines, each memory cell disposed at an intersection of a first conductive line and a second conductive line, and a passive material between the memory cells and at least one of the first conductive lines and the second conductive lines. Related semiconductor devices and electronic devices are disclosed.
    Type: Application
    Filed: September 30, 2022
    Publication date: February 2, 2023
    Inventors: Innocenzo Tortorelli, Fabio Pellizzer
  • Publication number: 20230027799
    Abstract: Methods, systems, and devices for techniques for forming self-aligned memory structures are described. Aspects include etching a layered assembly of materials including a first conductive material and a first sacrificial material to form a first set of channels along a first direction that creates a first set of sections. An insulative material may be deposited within each of the first set of channels and a second sacrificial material may be deposited onto the first set of sections and the insulating material. A second set of channels may be etched into the layered assembly of materials along a second direction that creates a second set of sections, where the second set of channels extend through the first and second sacrificial materials. Insulating material may be deposited in the second set of channels and the sacrificial materials removed leaving a cavity. A memory material may be deposited in the cavity.
    Type: Application
    Filed: August 4, 2022
    Publication date: January 26, 2023
    Inventors: Stephen W. Russell, Andrea Redaelli, Innocenzo Tortorelli, Agostino Pirovano, Fabio Pellizzer, Lorenzo Fratin
  • Publication number: 20230019954
    Abstract: Methods, systems, and devices for memory cells for storing operational data are described. A memory device may include an array of memory cells with different sets of cells for storing data. A first set of memory cells may store data for operating the memory device, and the associated memory cells may each contain a chalcogenide storage element. A second set of memory cells may store host data. Some memory cells included in the first set may be programmed to store a first logic state and other memory cells in the first set may be left unprogrammed (and may represent a second logic state). Sense circuitry may be coupled with the array and may determine a value of data stored by the first set of memory cells.
    Type: Application
    Filed: July 27, 2022
    Publication date: January 19, 2023
    Inventors: Mattia Boniardi, Anna Maria Conti, Innocenzo Tortorelli
  • Publication number: 20220415409
    Abstract: Methods, systems, and devices for programming techniques for polarity-based memory cells are described. A method may include writing memory cells to an intermediate state based on receiving a write command. Writing the intermediate state may include applying a first pulse having a first polarity to the memory cell. The method may include isolating a first access line coupled with the memory cell from a voltage source based on applying the first pulse. The method may also include applying a second pulse to a second access line coupled with the memory cell based on isolating the first access line.
    Type: Application
    Filed: June 28, 2021
    Publication date: December 29, 2022
    Inventors: Alessandro Sebastiani, Innocenzo Tortorelli
  • Patent number: 11515358
    Abstract: A semiconductor device includes first conductive lines extending in a first direction, second conductive lines extending in a second direction, memory cells disposed between the first conductive lines and the second conductive lines, each memory cell disposed at an intersection of a first conductive line and a second conductive line, and a passive material between the memory cells and at least one of the first conductive lines and the second conductive lines. Related semiconductor devices and electronic devices are disclosed.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: November 29, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Innocenzo Tortorelli, Fabio Pellizzer
  • Publication number: 20220366974
    Abstract: Disclosed herein is a memory cell including a memory element and a selector device. Data may be stored in both the memory element and selector device. The memory cell may be programmed by applying write pulses having different polarities and magnitudes. Different polarities of the write pulses may program different logic states into the selector device. Different magnitudes of the write pulses may program different logic states into the memory element. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities and magnitudes of the write pulses.
    Type: Application
    Filed: August 1, 2022
    Publication date: November 17, 2022
    Applicant: Micron Technology, Inc.
    Inventors: Innocenzo Tortorelli, Russell L. Meyer, Agostino Pirovano, Andrea Redaelli, Lorenzo Fratin, Fabio Pellizzer