Abstract: The invention reduces outside dimensions of a semiconductor device mounted with a semiconductor die on an external connection medium and minimizes degradation of electrical characteristics of the semiconductor device. The semiconductor device of the invention having a semiconductor die and a lead frame with a plurality of lead terminals has following features. The semiconductor die has a plurality of pad electrodes formed on its front surface, at least one via hole penetrating the semiconductor die, a columnar electrode electrically connected with the pad electrode through the via hole, and a protrusion electrode electrically connected with the columnar electrode. At least one of the lead terminals of the lead frame is formed extending to a position connectable with the protrusion electrode, being connected with the protrusion electrode.

Abstract: A semiconductor device (21) can include, e.g., a recessed portion (25) on the reverse surface (224) of an insulating resin (22) which is the mounting surface of the semiconductor device (21). Additionally, on the outer peripheral surface of the recessed portion (25), the exposed region of leads (26) and the reverse surface (224) of the insulating resin (22) form generally the same plane. This allows, e.g., a QFN semiconductor device (21) according to preferred embodiments herein to place dust particles in the recessed portion (25) even in the presence of dust particles such as crushed burr particles of the leads (26) or plastic burrs, thereby avoiding mounting deficiencies when mounting the semiconductor device.

Abstract: A semiconductor device of the present invention has a semiconductor element mounted on a surface of a support substrate, a case member for covering the surface of the support substrate to seal the semiconductor element, fine metal wires as connecting region for electrically connecting the semiconductor element and external terminals extending outside, and a frame member as a fixing component for mechanically fixing the semiconductor element to the support substrate by coming into contact with side surfaces of the semiconductor element.

Abstract: The invention provides an algorithm for aligning a rotating blade in a dicing process of partially dicing a wafer attached to a substrate. A width of a cut groove and distance between pads in the cut groove are detected by a recognition camera. Based on a result of this detection, alignment data ?y which is distance between a centerline of the width of the cut groove and a real centerline are calculated. Based on a difference between the distance of the pads in the cut groove and a target value of the distance, data ?z on alignment in a depth direction of the cut groove is calculated. The rotating blade is aligned by using the alignment data ?y and ?z.

Abstract: A semiconductor device (21) can include, e.g., a recessed portion (25) on the reverse surface (224) of an insulating resin (22) which is the mounting surface of the semiconductor device (21). Additionally, on the outer peripheral surface of the recessed portion (25), the exposed region of leads (26) and the reverse surface (224) of the insulating resin (22) form generally the same plane. This allows, e.g., a QFN semiconductor device (21) according to preferred embodiments herein to place dust particles in the recessed portion (25) even in the presence of dust particles such as crushed burr particles of the leads (26) or plastic burrs, thereby avoiding mounting deficiencies when mounting the semiconductor device.

Abstract: In order to provide a circuit device 10 where a second circuit element 15B is exposed froma sealing resin 16, a circuit device 10A comprises: an island 12 to whose top a first circuit element 15A is fixedly fitted; a plurality of leads 11 which are extended around the island 12 and electrically connected to the first circuit element 15A; a sealing resin 16 which seals the first circuit element 15A, the island 12, and leads 11 and forms a cavity portion 18; and a second circuit element 15B stored in the cavity portion 18. Accordingly, since the second circuit element 15B can be externally provided, the degree of freedom for mounting can be improved.

Abstract: In order to produce no effect even when a first semiconductor chip with a large amount of heat generation and a second semiconductor chip with a small amount of heat generation are integrally sealed by a resin, a resin sealing-type semiconductor device comprises a first semiconductor chip 15 with a large amount of heat generation, whose external electrode leading-out bonding pads 16, 16 . . . are wire-bonded to respective outer leads 25A, 25A . . . and a second semiconductor chip 17 smaller in the amount of heat generation than the first semiconductor chip, whose external electrode leading-out bonding pads 18, 18 . . . are wire-bonded to respective outer leads 25A, 25A . . . , wherein the first semiconductor chip 15 is molded by a high thermal conductive resin 28, and the second semiconductor chip 17 and the first semiconductor chip 15 molded by the high thermal conductive resin are integrally molded by a non-high thermal conductive resin 31.

Abstract: The preferred embodiments provide a lead frame wherein a first air vent 29 and a second air vent 30 are formed in an air vent forming region 32. When resin-molding, one end of this first air vent 29 is disposed within the cavity, whereby air in the cavity when resin-molding can be completely released to the outside of the cavity. As a result, a package after resin-molding includes no unfilled regions or voids, whereby a semiconductor device with excellent product quality can be provided. In the background, air in cavities could not be completely released when resin-molding since, for instance, one air vent was provided at a position apart from the cavity region, and unfilled regions or voids were created.

Abstract: An electron microscope including an apparatus for x-ray analysis, is capable of performing elemental analysis with X-rays emitted from a specimen by electron beam irradiation, that is, inspection of foreign particles, for enhancement of yields in manufacturing, at high speed and with high precision and high space resolving power. The current quantity of the electron beam is automatically controlled such that an X-ray count rate falls within a range of 1000 to 2000 counts per second, a plurality of X-ray energy regions are set up when checking an X-ray spectrum against reference spectra stored in a database for analysis of the X-ray spectrum, matching is performed for each of the X-ray energy regions, and the distribution of the elements observed is analyzed on the basis of an intensity ratio between X-ray sample spectra obtained by electron beam irradiation at not less than two varied acceleration voltages.

Abstract: There are provided an electron microscope including an apparatus of x-ray analysis, capable of performing elemental analysis with X-rays emitted from a specimen by electron beam irradiation, that is, inspection of foreign particles, for enhancement of yields in manufacturing semiconductor devices and so forth, at high speed and with high precision and high space resolving power, and a method of analyzing specimens using the same.

Abstract: The preferred embodiments provide a lead frame wherein a first air vent 29 and a second air vent 30 are formed in an air vent forming region 32. When resin-molding, one end of this first air vent 29 is disposed within the cavity, whereby air in the cavity when resin-molding can be completely released to the outside of the cavity. As a result, a package after resin-molding includes no unfilled regions or voids, whereby a semiconductor device with excellent product quality can be provided. In the background, air in cavities could not be completely released when resin-molding since, for instance, one air vent was provided at a position apart from the cavity region, and unfilled regions or voids were created.

Abstract: In a high-sensitivity X-ray detector, an image of the secondary electrons is little shifted and deformed by the astigmatism or the like even when it approaches very close to a specimen set on the stage of an electron microscope. When a beam of charged particles strike a specimen, the specimen emits backscattered charged particles along with X-rays. To prevent such undesired charged particles from entering into the X-ray detecting element of the X-ray detector, a means for generating a first magnetic field is applied. Another means for generating a second magnetic field is provided to cancel the magnetic filed leaked from the first means for generating magnetic field at the position of the specimen.

Abstract: An apparatus and method for observing a sample that is capable of making observations by irradiating an electron beam to a sample in the form of a thin film, and making elemental analysis accurately and with increased resolution while reducing background noise. A particular portion of the sample is observed by the electron beam by disposing a light element piece having a hole provided immediately behind the thin film sample. According to the present invention, it is possible to reduce the x-rays generated from portions other than the sample and electron beam incident on the sample after being scattered to portions other than the sample when observing the thin film sample by irradiating the electron beam. It is therefore possible to make secondary electron observation and elemental analysis with increased accuracy and sensitivity. Thus, an apparatus and a method for observing samples is provided that allows for the accurate and high-resolution internal observation of LSI devices.

Abstract: In a data transmission, a driving circuit 14 drives a light receiving element 15 in accordance with data from an external control circuit. In accordance with IrDA or remote control communication, driving capability of the driving circuit is changed. In a data reception, received data is transferred to a first or a second signal processing circuit in accordance with the IrDA or remote control communication and processed according to each communication format. In this configuration, a single light emitting or light receiving element permits data communication in different kinds of data communication formats.

Abstract: A semiconductor device (21) can include, e.g., a recessed portion (25) on the reverse surface (224) of an insulating resin (22) which is the mounting surface of the semiconductor device (21). Additionally, on the outer peripheral surface of the recessed portion (25), the exposed region of leads (26) and the reverse surface (224) of the insulating resin (22) form generally the same plane. This allows, e.g., a QFN semiconductor device (21) according to preferred embodiments herein to place dust particles in the recessed portion (25) even in the presence of dust particles such as crushed burr particles of the leads (26) or plastic burrs, thereby avoiding mounting deficiencies when mounting the semiconductor device.

Abstract: An apparatus and method for observing a sample that is capable of making observations by irradiating an electron beam to a sample in the form of a thin film, and making elemental analysis accurately and with increased resolution while reducing background noise. A particular portion of the sample is observed by the electron beam by disposing a light element piece having a hole provided immediately behind the thin film sample. According to the present invention, it is possible to reduce the x-rays generated from portions other than the sample and electron beam incident on the sample after being scattered to portions other than the sample when observing the thin film sample by irradiating the electron beam. It is therefore possible to make secondary electron observation and elemental analysis with increased accuracy and sensitivity. Thus, an apparatus and a method for observing samples is provided that allows for the accurate and high-resolution internal observation of LSI devices.

Abstract: The preferred embodiments provide a lead frame wherein a first air vent 29 and a second air vent 30 are formed in an air vent forming region 32. When resin-molding, one end of this first air vent 29 is disposed within the cavity, whereby air in the cavity when resin-molding can be completely released to the outside of the cavity. As a result, a package after resin-molding includes no unfilled regions or voids, whereby a semiconductor device with excellent product quality can be provided. In the background, air in cavities could not be completely released when resin-molding since, for instance, one air vent was provided at a position apart from the cavity region, and unfilled regions or voids were created.

Abstract: The semiconductor radiation detector has a low leakage current, high radiation detecting efficiency and low cost. A high-density impurity layer of the detector is formed at least on one surface of a semiconductor crystal wafer beforehand. A crystal of a size required for forming the detector is diced from the wafer and the diced surfaces of the crystal have a mirror finished surface. A passivation film is formed on the diced surfaces of the crystal immediately after polishing.

Abstract: In a high-sensitivity X-ray detector, an image of the secondary electrons is little shifted and deformed by the astigmatism or the like even when it approaches very close to a specimen set on the stage of an electron microscope. When a beam of charged particles strike a specimen, the specimen emits backscattered charged particles along with X-rays. To prevent such undesired charged particles from entering into the X-ray detecting element of the X-ray detector, a means for generating a first magnetic field is applied. Another means for generating a second magnetic field is provided to cancel the magnetic filed leaked from the first means for generating magnetic field at the position of the specimen.

Abstract: Since die pads 50, 51, an external connecting electrode 52 and a bridge are covered with insulating resin after half-etching, they are formed into a single package without using a coupling member such as a supporting lead or adhesive tape. In addition, since no supporting board is required, a low-profiled semiconductor device with excellent heat radiation can be realized.