Patents by Inventor Isao Suzumura

Isao Suzumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230026937
    Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer and a plurality of transparent conductive layers. The transparent conductive layers include a pixel electrode, a first conductive layer and a second conductive layer. The pixel electrode is in contact with the second conductive layer. The second conductive layer is in contact with the first conductive layer. The first conductive layer is brought into contact with a second region of the semiconductor layer through a first contact hole.
    Type: Application
    Filed: October 4, 2022
    Publication date: January 26, 2023
    Applicant: Japan Display Inc.,
    Inventors: Isao SUZUMURA, Fumiya KIMURA, Kazuhide MOCHIZUKI, Hitoshi TANAKA, Kenichi AKUTSU, Atsuko SHIMADA
  • Publication number: 20230020074
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.
    Type: Application
    Filed: September 15, 2022
    Publication date: January 19, 2023
    Applicant: Japan Display Inc.
    Inventors: Yohei YAMAGUCHI, Arichika ISHIDA, Hidekazu MIYAKE, Hiroto MIYAKE, Isao SUZUMURA
  • Patent number: 11550195
    Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.
    Type: Grant
    Filed: October 21, 2021
    Date of Patent: January 10, 2023
    Assignee: JAPAN DISPLAY INC.
    Inventors: Toshihide Jinnai, Hajime Watakabe, Akihiro Hanada, Ryo Onodera, Isao Suzumura
  • Publication number: 20220399403
    Abstract: A photo detecting device, includes a plurality of photodiodes arranged above a substrate, a lower electrode and a first inorganic insulating film that are provided between the substrate and the photodiodes in a direction orthogonal to a surface of the substrate, and an upper electrode provided above the photodiodes. Each of the photodiodes comprises an active layer, a first carrier transport layer provided between the active layer and the lower electrode, and a second carrier transport layer provided between the active layer and the upper electrode, the first inorganic insulating film is provided between the lower electrode and the first carrier transport layer, and the first inorganic insulating film covers at least an end on an outer edge side of the lower electrode.
    Type: Application
    Filed: June 13, 2022
    Publication date: December 15, 2022
    Applicant: Japan Display Inc.
    Inventors: Isao SUZUMURA, Kento HIMOTO, Takashi NAKAMURA, Masahiro TADA, Yasushi TOMIOKA
  • Patent number: 11521990
    Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: December 6, 2022
    Assignee: Japan Display Inc.
    Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
  • Publication number: 20220373846
    Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer, a third insulating layer, a color filter, and transparent conductive layers including a pixel electrode, a first conductive layer, and a second conductive layer. The first conductive layer is located between the second insulating layer and the third insulating layer, and is in contact with a second area of the semiconductor layer. The second conductive layer is located on the color filter and is in contact with the first conductive layer. The pixel electrode is located on the second conductive layer and is in contact with the second conductive layer.
    Type: Application
    Filed: May 20, 2022
    Publication date: November 24, 2022
    Inventors: Fumiya KIMURA, Isao SUZUMURA, Junko NAGASAWA, Atsuko IMOTO
  • Publication number: 20220359843
    Abstract: According to one embodiment, a sensor device includes an insulating base including a meandering strip-shaped portion and an island-shaped portion, a first inorganic insulating film on the island-shaped portion, a first wiring layer on the first inorganic insulating film, a second inorganic insulating film on the first wiring layer, a second wiring layer on the second inorganic insulating film, an organic insulating film on the second wiring layer, a barrier film covering the organic insulating film, a sensor element on the barrier film, and a sealing film covering the sensor element. The barrier film covers side surfaces of the organic insulating film, and the sealing film is in contact with the barrier film and the second inorganic insulating film.
    Type: Application
    Filed: April 29, 2022
    Publication date: November 10, 2022
    Inventors: Isao SUZUMURA, Takumi SANO
  • Patent number: 11493812
    Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer and a plurality of transparent conductive layers. The transparent conductive layers include a pixel electrode, a first conductive layer and a second conductive layer. The pixel electrode is in contact with the second conductive layer. The second conductive layer is in contact with the first conductive layer. The first conductive layer is brought into contact with a second region of the semiconductor layer through a first contact hole.
    Type: Grant
    Filed: October 9, 2020
    Date of Patent: November 8, 2022
    Assignee: JAPAN DISPLAY INC.
    Inventors: Isao Suzumura, Fumiya Kimura, Kazuhide Mochizuki, Hitoshi Tanaka, Kenichi Akutsu, Atsuko Shimada
  • Patent number: 11474406
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: October 18, 2022
    Assignee: Japan Display Inc.
    Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
  • Publication number: 20220326581
    Abstract: The purpose of the present invention is to obviate patterning defects of electrodes in through-holes formed in an organic passivation film for connection between TFTs and pixel electrodes in an ultra-high definition display device. To achieve the foregoing, the present invention has a configuration such as the following. This display device, in which a TFT (thin-film transistor) is formed on a substrate, an organic passivation film is formed covering the TFT, and a first pixel electrode, a first common electrode, a second pixel electrode, and a second common electrode are formed on the organic passivation film, is characterized in that the first pixel electrode is connected to the TFT via a through-hole formed in the organic passivation film, the through-hole is filled with a filler, and an end of the second pixel electrode is present on the upper side of the filler.
    Type: Application
    Filed: June 28, 2022
    Publication date: October 13, 2022
    Inventors: Fumiya KIMURA, Isao SUZUMURA
  • Publication number: 20220293663
    Abstract: A purpose of the present invention is to countermeasure a connection failure of an electrode in an optical sensor using PIN type photo conductive film. A structure of the present invention is as follows. A semiconductor device including an optical sensor, the optical sensor including: a thin film transistor formed on a substrate, and a photo diode formed above the thin film transistor, in which the photo diode includes an anode, a photo conductive film and a cathode, the cathode is constituted from a titanium film, and a first transparent conductive film is formed between the titanium film and the photo conductive film.
    Type: Application
    Filed: June 2, 2022
    Publication date: September 15, 2022
    Inventors: Marina Mochizuki, Isao Suzumura
  • Publication number: 20220246764
    Abstract: The present invention addresses the problem of: realizing a TFT that uses an oxide semiconductor and that is capable of maintaining stable characteristics even in the case where the TFT is miniaturized; and realizing a display device that has high-definition pixels using such a TFT. To solve this problem, the present invention has the following configuration. A semiconductor device including an oxide semiconductor TFT formed using an oxide semiconductor film 109, the semiconductor device being characterized in that: the channel length of the oxide semiconductor TFT is 1.3 to 2.3 ?m; and the sheet resistance of a source region 1092 and a drain region 1091 of the oxide semiconductor film 109 is 1.4 to 20 K?/?.
    Type: Application
    Filed: April 20, 2022
    Publication date: August 4, 2022
    Applicant: Japan Display Inc.
    Inventors: Isao SUZUMURA, Hajime WATAKABE, Akihiro HANADA, Ryo ONODERA, Tomoyuki ITO
  • Publication number: 20220238825
    Abstract: The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.
    Type: Application
    Filed: April 14, 2022
    Publication date: July 28, 2022
    Inventors: Marina MOCHIZUKI, Isao SUZUMURA
  • Publication number: 20220208795
    Abstract: The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.
    Type: Application
    Filed: March 15, 2022
    Publication date: June 30, 2022
    Inventor: Isao SUZUMURA
  • Patent number: 11348948
    Abstract: The purpose of the present invention is to realize the display device having thin film transistors of the oxide semiconductor of stable characteristics. An example of the concrete structure is that: A display device having a substrate including a display area, plural pixels formed in the display area, the pixel includes a first thin film transistor having an oxide semiconductor film, a first insulating film made of a first silicon oxide on a first side of the oxide semiconductor film, a second insulating film made of a second silicon oxide on a second side of the oxide semiconductor film, wherein oxygen desorption amount per unit area from the first insulating film is larger than that from the second insulating film, when measured by TDS (Thermal Desorption Spectrometry) provided M/z=32 and a measuring range in temperature is from 100 centigrade to 500 centigrade.
    Type: Grant
    Filed: July 17, 2020
    Date of Patent: May 31, 2022
    Assignee: JAPAN DISPLAY INC.
    Inventors: Akihiro Hanada, Yohei Yamaguchi, Hirokazu Watanabe, Isao Suzumura
  • Patent number: 11309336
    Abstract: The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.
    Type: Grant
    Filed: July 7, 2020
    Date of Patent: April 19, 2022
    Assignee: Japan Display Inc.
    Inventor: Isao Suzumura
  • Publication number: 20210405411
    Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.
    Type: Application
    Filed: September 10, 2021
    Publication date: December 30, 2021
    Applicant: Japan Display Inc.
    Inventors: Akihiro HANADA, Toshihide JINNAI, Isao SUZUMURA, Hajime WATAKABE, Ryo ONODERA
  • Publication number: 20210391359
    Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.
    Type: Application
    Filed: August 27, 2021
    Publication date: December 16, 2021
    Inventors: Hajime WATAKABE, Isao SUZUMURA, Akihiro HANADA, Yohei YAMAGUCHI
  • Patent number: 11181792
    Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: November 23, 2021
    Assignee: JAPAN DISPLAY INC.
    Inventors: Toshihide Jinnai, Hajime Watakabe, Akihiro Hanada, Ryo Onodera, Isao Suzumura
  • Patent number: 11177388
    Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.
    Type: Grant
    Filed: February 10, 2020
    Date of Patent: November 16, 2021
    Assignee: JAPAN DISPLAY INC.
    Inventors: Hajime Watakabe, Tomoyuki Ito, Toshihide Jinnai, Isao Suzumura, Akihiro Hanada, Ryo Onodera