Patents by Inventor Isao Suzumura
Isao Suzumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240142836Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer and a plurality of transparent conductive layers. The transparent conductive layers include a pixel electrode, a first conductive layer and a second conductive layer. The pixel electrode is in contact with the second conductive layer. The second conductive layer is in contact with the first conductive layer. The first conductive layer is brought into contact with a second region of the semiconductor layer through a first contact hole.Type: ApplicationFiled: January 9, 2024Publication date: May 2, 2024Applicant: Japan Display Inc.Inventors: Isao SUZUMURA, Fumiya KIMURA, Kazuhide MOCHIZUKI, Hitoshi TANAKA, Kenichi AKUTSU, Atsuko SHIMADA
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Patent number: 11966131Abstract: A display device is provided and includes a substrate on which a TFT is formed. The display device including an organic film formed on the TFT, the organic film having a through hole, and a first common electrode, an upper pixel electrode and a second common electrode which are stacked in this order above the organic passivation film, a filler being filled in the through hole, and wherein the upper pixel electrode is electrically connected with the TFT, and an edge of the upper pixel electrode is located directly on the filler.Type: GrantFiled: May 11, 2023Date of Patent: April 23, 2024Assignee: Japan Display Inc.Inventors: Fumiya Kimura, Isao Suzumura
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Publication number: 20240088192Abstract: The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a P+ layer from being generated and a metal wiring installed over the P+ layer from coming down while securing the electrical conductivity of the P+ layer. The semiconductor device includes a photosensor including a photodiode formed on a substrate. The photodiode includes: a cathode electrode; a laminated structure that is formed on the cathode electrode and in which an N+ layer, an I layer, and a P+ layer are laminated in this order; an anode electrode formed on the P+ layer; a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and a metal wiring connected to the anode electrode. The edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Applicant: Japan Display Inc.Inventors: Hajime WATAKABE, Akihiro HANADA, Marina MOCHIZUKI, Ryo ONODERA, Fumiya KIMURA, Isao SUZUMURA
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Patent number: 11921392Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.Type: GrantFiled: September 15, 2022Date of Patent: March 5, 2024Assignee: Japan Display Inc.Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
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Publication number: 20240069400Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.Type: ApplicationFiled: November 7, 2023Publication date: February 29, 2024Applicant: Japan Display Inc.Inventors: Akihiro HANADA, Toshihide JINNAI, Isao SUZUMURA, Hajime WATAKABE, Ryo ONODERA
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Patent number: 11906862Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer and a plurality of transparent conductive layers. The transparent conductive layers include a pixel electrode, a first conductive layer and a second conductive layer. The pixel electrode is in contact with the second conductive layer. The second conductive layer is in contact with the first conductive layer. The first conductive layer is brought into contact with a second region of the semiconductor layer through a first contact hole.Type: GrantFiled: October 4, 2022Date of Patent: February 20, 2024Assignee: JAPAN DISPLAY INC.Inventors: Isao Suzumura, Fumiya Kimura, Kazuhide Mochizuki, Hitoshi Tanaka, Kenichi Akutsu, Atsuko Shimada
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Publication number: 20240030226Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: October 4, 2023Publication date: January 25, 2024Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
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Patent number: 11874574Abstract: According to one embodiment, a display device includes a signal line, a scanning line, a semiconductor layer, a first insulating layer which covers the semiconductor layer, a color filter above the first insulating layer, a pixel electrode above the color filter and a common electrode. The first insulating layer includes a first contact hole for connecting the semiconductor layer and the pixel electrode to each other. The first contact hole is provided at a position displaced from the color filter in plan view.Type: GrantFiled: December 21, 2022Date of Patent: January 16, 2024Assignee: JAPAN DISPLAY INC.Inventors: Fumiya Kimura, Isao Suzumura
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Patent number: 11855117Abstract: The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a P+ layer from being generated and a metal wiring installed over the P+ layer from coming down while securing the electrical conductivity of the P+ layer. The semiconductor device includes a photosensor including a photodiode formed on a substrate. The photodiode includes: a cathode electrode; a laminated structure that is formed on the cathode electrode and in which an N+ layer, an I layer, and a P+ layer are laminated in this order; an anode electrode formed on the P+ layer; a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and a metal wiring connected to the anode electrode. The edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view.Type: GrantFiled: February 4, 2021Date of Patent: December 26, 2023Assignee: JAPAN DISPLAY INC.Inventors: Hajime Watakabe, Akihiro Hanada, Marina Mochizuki, Ryo Onodera, Fumiya Kimura, Isao Suzumura
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Publication number: 20230411401Abstract: The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.Type: ApplicationFiled: September 1, 2023Publication date: December 21, 2023Inventor: Isao SUZUMURA
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Patent number: 11846860Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.Type: GrantFiled: February 6, 2023Date of Patent: December 19, 2023Assignee: Japan Display Inc.Inventors: Akihiro Hanada, Toshihide Jinnai, Isao Suzumura, Hajime Watakabe, Ryo Onodera
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Publication number: 20230387146Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.Type: ApplicationFiled: August 8, 2023Publication date: November 30, 2023Inventors: Hajime WATAKABE, Isao SUZUMURA, Akihiro HANADA, Yohei YAMAGUCHI
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Patent number: 11822194Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer, a third insulating layer, a color filter, and transparent conductive layers including a pixel electrode, a first conductive layer, and a second conductive layer. The first conductive layer is located between the second insulating layer and the third insulating layer, and is in contact with a second area of the semiconductor layer. The second conductive layer is located on the color filter and is in contact with the first conductive layer. The pixel electrode is located on the second conductive layer and is in contact with the second conductive layer.Type: GrantFiled: May 20, 2022Date of Patent: November 21, 2023Assignee: Japan Display Inc.Inventors: Fumiya Kimura, Isao Suzumura, Junko Nagasawa, Atsuko Imoto
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Patent number: 11810921Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: November 9, 2022Date of Patent: November 7, 2023Assignee: Japan Display Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Patent number: 11791346Abstract: The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.Type: GrantFiled: March 15, 2022Date of Patent: October 17, 2023Assignee: Japan Display Inc.Inventor: Isao Suzumura
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Patent number: 11764233Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.Type: GrantFiled: August 27, 2021Date of Patent: September 19, 2023Assignee: Japan Display Inc.Inventors: Hajime Watakabe, Isao Suzumura, Akihiro Hanada, Yohei Yamaguchi
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Publication number: 20230280623Abstract: A display device is provided and includes a substrate on which a TFT is formed. The display device including an organic film formed on the TFT, the organic film having a through hole, and a first common electrode, an upper pixel electrode and a second common electrode which are stacked in this order above the organic passivation film, a filler being filled in the through hole, and wherein the upper pixel electrode is electrically connected with the TFT, and an edge of the upper pixel electrode is located directly on the filler.Type: ApplicationFiled: May 11, 2023Publication date: September 7, 2023Inventors: Fumiya KIMURA, Isao SUZUMURA
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Publication number: 20230284509Abstract: According to one embodiment, a display device manufacturing method comprises forming a lower electrode including a first metal layer and a conductive oxide layer which covers the first metal layer and which has a thickness of 15 nm or more and 50 nm or less, forming a rib covering at least a part of the lower electrode and including a pixel aperture which exposes the conductive oxide layer, forming a second metal layer above the rib and the conductive oxide layer exposed through the pixel aperture, and patterning the second metal layer by etching including wet etching to form a partition on the rib.Type: ApplicationFiled: February 28, 2023Publication date: September 7, 2023Applicant: Japan Display Inc.Inventors: Isao SUZUMURA, Fumiya KIMURA, Hiroshi OGAWA
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Patent number: 11721765Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.Type: GrantFiled: October 13, 2021Date of Patent: August 8, 2023Assignee: JAPAN DISPLAY INC.Inventors: Hajime Watakabe, Tomoyuki Ito, Toshihide Jinnai, Isao Suzumura, Akihiro Hanada, Ryo Onodera
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Publication number: 20230205023Abstract: According to one embodiment, a display device includes a signal line, a scanning line, a semiconductor layer, a first insulating layer which covers the semiconductor layer, a color filter above the first insulating layer, a pixel electrode above the color filter and a common electrode. The first insulating layer includes a first contact hole for connecting the semiconductor layer and the pixel electrode to each other. The first contact hole is provided at a position displaced from the color filter in plan view.Type: ApplicationFiled: December 21, 2022Publication date: June 29, 2023Applicant: Japan Display Inc.Inventors: Fumiya KIMURA, Isao SUZUMURA