Patents by Inventor Isao Suzumura
Isao Suzumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200152668Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: January 15, 2020Publication date: May 14, 2020Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
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Publication number: 20200117035Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.Type: ApplicationFiled: December 12, 2019Publication date: April 16, 2020Applicant: Japan Display Inc.Inventors: Yohei YAMAGUCHI, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
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Patent number: 10580801Abstract: The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.Type: GrantFiled: May 14, 2018Date of Patent: March 3, 2020Assignee: Japan Display Inc.Inventors: Isao Suzumura, Hajime Watakabe, Akihiro Hanada, Hirokazu Watanabe, Yohei Yamaguchi, Marina Shiokawa, Ryotaro Kimura
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Patent number: 10573666Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: June 19, 2018Date of Patent: February 25, 2020Assignee: Japan Display Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Patent number: 10539846Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.Type: GrantFiled: August 23, 2018Date of Patent: January 21, 2020Assignee: Japan Display Inc.Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
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Publication number: 20200006568Abstract: The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.Type: ApplicationFiled: September 10, 2019Publication date: January 2, 2020Applicant: Japan Display Inc.Inventors: Yohei YAMAGUCHI, Isao SUZUMURA
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Patent number: 10459304Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.Type: GrantFiled: April 26, 2019Date of Patent: October 29, 2019Assignee: Japan Display Inc.Inventors: Hajime Watakabe, Isao Suzumura, Hirokazu Watanabe, Akihiro Hanada
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Patent number: 10453965Abstract: The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.Type: GrantFiled: February 9, 2018Date of Patent: October 22, 2019Assignee: Japan Display Inc.Inventors: Yohei Yamaguchi, Isao Suzumura
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Patent number: 10396187Abstract: A semiconductor device including a first oxide insulating layer, a barrier layer above the first oxide insulating layer, the barrier layer including an opening, a second oxide insulating layer above the first oxide insulating layer at a position overlapping the opening, an oxide semiconductor layer facing the first oxide insulating layer interposed by the second oxide insulating layer at a position overlapping the opening, a gate electrode facing the oxide semiconductor layer at side opposite to the first oxide insulating layer with respect to the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode. A contained amount of oxygen in the first oxide insulating layer is larger than a contained amount of oxygen in the second oxide insulating layer.Type: GrantFiled: January 26, 2018Date of Patent: August 27, 2019Assignee: Japan Display Inc.Inventors: Toshinari Sasaki, Masahiro Watabe, Masayoshi Fuchi, Isao Suzumura, Marina Shiokawa
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Publication number: 20190250443Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.Type: ApplicationFiled: April 26, 2019Publication date: August 15, 2019Inventors: Hajime WATAKABE, Isao SUZUMURA, Hirokazu WATANABE, Akihiro HANADA
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Publication number: 20190244979Abstract: A display device to improve reliability of the TFT of the oxide semiconductor, including: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.Type: ApplicationFiled: April 18, 2019Publication date: August 8, 2019Applicant: Japan Display Inc.Inventors: Isao SUZUMURA, Yohei YAMAGUCHI, Hajime WATAKABE, Akihiro HANADA, Hirokazu WATANABE, Marina SHIOKAWA
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Patent number: 10361229Abstract: The invention allows formation of LTPS TFTs and TAOS TFTs on the same substrate. The invention provides a display device including a substrate having a display area in which pixels are formed. The pixels include a first TFT made of a TAOS. The drain of the first TFT is formed of first LTPS 112. The source of the first TFT is formed of second LTPS 113. The first LTPS 112 is connected to a first electrode 106 via a first through-hole 108 formed in an insulating film 105 covering the first TFT. The second LTPS 113 is connected to a second electrode 107 via a second through-hole 108 formed in the insulating film 105 covering the first TFT.Type: GrantFiled: June 11, 2018Date of Patent: July 23, 2019Assignee: Japan Display Inc.Inventors: Yohei Yamaguchi, Isao Suzumura, Hidekazu Miyake
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Patent number: 10317763Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a source/drain electrode of the first TFT connects with the silicon (Si) via a first through hole, a source/drain electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an AlO layer is formed on the metal films and the oxide semiconductor, the second source/drain electrode and the metal films are connected via the second through hole formed in the AlO layer.Type: GrantFiled: October 3, 2017Date of Patent: June 11, 2019Assignee: Japan Display Inc.Inventors: Hajime Watakabe, Isao Suzumura, Hirokazu Watanabe, Akihiro Hanada
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Patent number: 10283644Abstract: A thin film transistor includes a first oxide semiconductor, a source electrode, a drain electrode, a gate insulating film and a gate electrode. A second oxide semiconductor layer is between the first oxide semiconductor layer and the source electrode. A third oxide semiconductor layer is between the first oxide semiconductor layer and the drain electrode. The content ratio of oxygen/Indium in each of the second semiconductor layer and the third oxide semiconductor layer is equal to or larger than that of the first semiconductor layer. A thickness of each of the second semiconductor layer and the third oxide semiconductor layer is bigger than that of the first semiconductor layer.Type: GrantFiled: June 3, 2016Date of Patent: May 7, 2019Assignee: Japan Display Inc.Inventors: Isao Suzumura, Norihiro Uemura, Takeshi Noda, Hidekazu Miyake, Yohei Yamaguchi
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Publication number: 20190129227Abstract: The purpose of the invention is to realize the flexible display device of high reliability; specifically in a structure that a bending area is in a terminal area, and in that disconnection of the wiring does not occur in the bending area. The concrete structure is that: a display device having a display area, a driving circuit area and a bending area comprising: a first thin film transistor and a first interlayer insulating film are formed in the display area, a second thin film transistor and a second interlayer insulating film are formed in the driving circuit area, terminal wirings to connects the display area and the driving circuit area are formed in the bending area.Type: ApplicationFiled: October 8, 2018Publication date: May 2, 2019Applicant: Japan Display Inc.Inventors: Akihiro HANADA, Isao SUZUMURA, Hajime WATAKABE
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Patent number: 10211235Abstract: The purpose of the present invention is to form both LTPS TFT and Ply-Si TFT on a same substrate. The feature of the display device to realize the above purpose is that: a display device comprising: a substrate including a first TFT having an oxide semiconductor layer and a second TFT having a Poly-Si layer, an undercoat is formed on the substrate, the oxide semiconductor layer is formed on or above the undercoat, a first interlayer insulating film is formed on or above the oxide semiconductor layer, the Poly-Si layer is formed on or above the first interlayer insulating film.Type: GrantFiled: August 16, 2017Date of Patent: February 19, 2019Assignee: Japan Display Inc.Inventors: Isao Suzumura, Hajime Watakabe, Akihiro Hanada, Hirokazu Watanabe
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Patent number: 10199591Abstract: An organic EL display device has a TFT formed on the substrate, and an organic EL layer formed on the TFT. A protective layer is formed on the organic EL layer, and a first barrier layer which contains AlOx is formed between the substrate and the TFT.Type: GrantFiled: April 3, 2017Date of Patent: February 5, 2019Assignee: Japan Display Inc.Inventors: Yoshinori Ishii, Kazufumi Watabe, Isao Suzumura
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Publication number: 20180364509Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.Type: ApplicationFiled: August 23, 2018Publication date: December 20, 2018Applicant: Japan Display Inc.Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
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Publication number: 20180342536Abstract: The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.Type: ApplicationFiled: May 14, 2018Publication date: November 29, 2018Applicant: Japan Display Inc.Inventors: Isao Suzumura, Hajime Watakabe, Akihiro Hanada, Hirokazu Watanabe, Yohei Yamaguchi, Marina Shiokawa, Ryotaro Kimura
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Publication number: 20180308869Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: June 19, 2018Publication date: October 25, 2018Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI