Patents by Inventor Isao Takasu

Isao Takasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11493647
    Abstract: A radiation detector includes a first detecting part including a first organic detection layer and a first layer, and a second detecting part including a second organic detection layer. The first layer includes a first material and a first thickness. The second detecting part does not include the first layer. The second detecting part does not include a second layer, or the second detecting part includes the second layer that includes at least one of a second material or a second thickness. The second material is different from the first material. The second thickness is different from the first thickness. The first material includes at least one of a first organic material or a first element. The second material includes at least one of a second organic material or a second element.
    Type: Grant
    Filed: February 25, 2021
    Date of Patent: November 8, 2022
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kohei Nakayama, Atsushi Wada, Fumihiko Aiga, Isao Takasu, Yuko Nomura
  • Publication number: 20220283323
    Abstract: According to one embodiment, a radiation detector includes a first member including a scintillator layer, an organic member including an organic semiconductor layer, and a first conductive layer. The first conductive layer includes a first conductive region and a second conductive region. A second direction from the first conductive region toward the second conductive region crosses a first direction from the organic member toward the first member. A first portion of the organic member is between the first conductive region and the second conductive region in the second direction.
    Type: Application
    Filed: August 25, 2021
    Publication date: September 8, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yuko NOMURA, Kohei NAKAYAMA, Atsushi WADA, Fumihiko AIGA, Isao TAKASU
  • Publication number: 20220285441
    Abstract: According to one embodiment, a radiation detector includes a detecting part, and a transmitting part. The detecting part is configured to output a signal. The signal corresponds to radiation incident on the detecting part. The transmitting part includes a first conductive layer, a second conductive layer, and an organic layer. The first conductive layer is electrically connected with the detecting part, and is configured to transmit the signal. The second conductive layer is separated from the first conductive layer. At least a portion of the organic layer is between the first conductive layer and the second conductive layer.
    Type: Application
    Filed: August 30, 2021
    Publication date: September 8, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kohei NAKAYAMA, Isao TAKASU, Atsushi WADA, Fumihiko AIGA, Yuko NOMURA
  • Publication number: 20220259491
    Abstract: According to one embodiment, a scintillator includes a first layer. The first layer includes a first organic substance capable of emitting light, and a second organic substance. The second organic substance includes at least one selected from the group consisting of a carbonyl group, phosphine oxide, and a sulfinyl group. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns.
    Type: Application
    Filed: August 25, 2021
    Publication date: August 18, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Atsushi WADA, Isao TAKASU, Fumihiko AIGA, Kohei NAKAYAMA, Yuko NOMURA
  • Patent number: 11386354
    Abstract: A plurality of feature values are extracted from input data as document data, distributed representations of words that correspond to the respective extracted plurality of feature values is obtained, and the extracted plurality of feature values are aggregated into a plurality of classifications based on the obtained distributed representation.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: July 12, 2022
    Assignee: NS SOLUTIONS CORPORATION
    Inventors: Isao Sonobe, Takashi Mitsubuchi, Hideaki Tanaka, Hiroaki Takasu, Kazuhiro Yamada, Yasuhiro Mitsuno
  • Patent number: 11370076
    Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMO4 substrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: June 28, 2022
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yoshifumi Takasu, Yoshio Okayama, Akihiko Ishibashi, Isao Tashiro, Akio Ueta, Masaki Nobuoka, Naoya Ryoki
  • Publication number: 20220140244
    Abstract: According to one embodiment, a radiation detector includes a first layer, a first conductive layer, a second conductive layer, and an organic semiconductor layer. The first layer includes a first organic substance. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns. The second conductive layer is located between the first layer and the first conductive layer. The organic semiconductor layer is located between the first conductive layer and the second conductive layer.
    Type: Application
    Filed: August 30, 2021
    Publication date: May 5, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Isao TAKASU, Atsushi WADA, Fumihiko AIGA, Kohei NAKAYAMA, Yuko NOMURA
  • Publication number: 20220082711
    Abstract: A radiation detector includes a first detecting part including a first organic detection layer and a first layer, and a second detecting part including a second organic detection layer. The first layer includes a first material and a first thickness. The second detecting part does not include the first layer. The second detecting part does not include a second layer, or the second detecting part includes the second layer that includes at least one of a second material or a second thickness. The second material is different from the first material. The second thickness is different from the first thickness. The first material includes at least one of a first organic material or a first element. The second material includes at least one of a second organic material or a second element.
    Type: Application
    Filed: February 25, 2021
    Publication date: March 17, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kohei NAKAYAMA, Atsushi WADA, Fumihiko AIGA, Isao TAKASU, Yuko NOMURA
  • Publication number: 20220085108
    Abstract: According to one embodiment, a radiation detector includes a first layer, a first light-emitting part, a detecting part, a detection circuit, and a first drive circuit. The first layer includes a first organic material. The first light-emitting part includes a first organic light-emitting layer. The detecting part is provided between the first layer and the first light-emitting part. The detecting part includes an organic photoelectric conversion layer and is configured to generate an electrical signal corresponding to radiation incident on the first layer. The detection circuit is configured to output a detection signal based on the electrical signal. The first drive circuit is configured to supply a first drive signal to the first light-emitting part based on the detection signal.
    Type: Application
    Filed: February 19, 2021
    Publication date: March 17, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Atsushi WADA, Isao TAKASU, Kohei NAKAYAMA, Fumihiko AIGA
  • Publication number: 20220082715
    Abstract: According to one embodiment, a radiation detector includes a base body, a first radiation detection element, and a second radiation detection element. The base body includes a first surface. The first surface includes first and second partial regions. A first direction from the first partial region toward the second partial region is along the first surface. The first radiation detection element is fixable to the first partial region. The second radiation detection element includes a first detecting part fixable to the second partial region. The first detecting part includes first and second end portions. A second direction from the first end portion toward the second end portion crosses the first surface. The second end portion is between the first end portion and the second partial region in the second direction. The first radiation detection element does not overlap the first end portion in the first direction.
    Type: Application
    Filed: February 25, 2021
    Publication date: March 17, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Isao TAKASU, Kohei NAKAYAMA, Atsushi WADA, Fumihiko AIGA, Yuko NOMURA
  • Patent number: 11226421
    Abstract: According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: January 18, 2022
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Fumihiko Aiga, Atsushi Wada, Kohei Nakayama, Yuko Nomura, Sara Yoshio, Rei Hasegawa, Isao Takasu
  • Patent number: 11152575
    Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and an intermediate layer provided between the first conductive layer and the second conductive layer. The intermediate layer includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of an n-type, and the second semiconductor region is of a p-type. The first semiconductor region includes at least one selected from the group consisting of fullerene and a fullerene derivative. The second semiconductor region includes at least one selected from the group consisting of quinacridone and a quinacridone derivative. A ratio of a weight of the second semiconductor region per unit volume to a weight of the first semiconductor region per unit volume in the intermediate layer is greater than 5.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: October 19, 2021
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Atsushi Wada, Isao Takasu, Rei Hasegawa
  • Patent number: 11125895
    Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: September 21, 2021
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kohei Nakayama, Fumihiko Aiga, Go Kawata, Isao Takasu, Yuko Nomura, Satomi Taguchi, Hyangmi Jung, Atsushi Wada, Rei Hasegawa
  • Patent number: 11081657
    Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: August 3, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Atsushi Wada, Isao Takasu, Rei Hasegawa, Fumihiko Aiga
  • Patent number: 11037993
    Abstract: A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: June 15, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kohei Nakayama, Fumihiko Aiga, Atsushi Wada, Isao Takasu, Yuko Nomura, Sara Yoshio, Rei Hasegawa
  • Patent number: 10930861
    Abstract: According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 ?m or more.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: February 23, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Isao Takasu, Hyangmi Jung, Kohei Nakayama, Yuko Nomura, Rei Hasegawa
  • Publication number: 20200395415
    Abstract: A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.
    Type: Application
    Filed: February 28, 2020
    Publication date: December 17, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kohei NAKAYAMA, Fumihiko Aiga, Atsushi Wada, Isao Takasu, Yuko Nomura, Sara Yoshio, Rei Hasegawa
  • Patent number: 10840465
    Abstract: According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: November 17, 2020
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hyangmi Jung, Satomi Taguchi, Isao Takasu, Yuko Nomura, Rei Hasegawa
  • Patent number: 10761222
    Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: September 1, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kohei Nakayama, Fumihiko Aiga, Go Kawata, Isao Takasu, Yuko Nomura, Satomi Taguchi, Hyangmi Jung, Atsushi Wada, Rei Hasegawa
  • Publication number: 20200091440
    Abstract: According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 ?m or more.
    Type: Application
    Filed: March 5, 2019
    Publication date: March 19, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Isao TAKASU, Hyangmi JUNG, Kohei NAKAYAMA, Yuko NOMURA, Rei HASEGAWA