Abstract: A radiation detector includes a first detecting part including a first organic detection layer and a first layer, and a second detecting part including a second organic detection layer. The first layer includes a first material and a first thickness. The second detecting part does not include the first layer. The second detecting part does not include a second layer, or the second detecting part includes the second layer that includes at least one of a second material or a second thickness. The second material is different from the first material. The second thickness is different from the first thickness. The first material includes at least one of a first organic material or a first element. The second material includes at least one of a second organic material or a second element.

Abstract: According to one embodiment, a radiation detector includes a first layer, a first light-emitting part, a detecting part, a detection circuit, and a first drive circuit. The first layer includes a first organic material. The first light-emitting part includes a first organic light-emitting layer. The detecting part is provided between the first layer and the first light-emitting part. The detecting part includes an organic photoelectric conversion layer and is configured to generate an electrical signal corresponding to radiation incident on the first layer. The detection circuit is configured to output a detection signal based on the electrical signal. The first drive circuit is configured to supply a first drive signal to the first light-emitting part based on the detection signal.

Abstract: According to one embodiment, a radiation detector includes a base body, a first radiation detection element, and a second radiation detection element. The base body includes a first surface. The first surface includes first and second partial regions. A first direction from the first partial region toward the second partial region is along the first surface. The first radiation detection element is fixable to the first partial region. The second radiation detection element includes a first detecting part fixable to the second partial region. The first detecting part includes first and second end portions. A second direction from the first end portion toward the second end portion crosses the first surface. The second end portion is between the first end portion and the second partial region in the second direction. The first radiation detection element does not overlap the first end portion in the first direction.

Abstract: According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.

Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and an intermediate layer provided between the first conductive layer and the second conductive layer. The intermediate layer includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of an n-type, and the second semiconductor region is of a p-type. The first semiconductor region includes at least one selected from the group consisting of fullerene and a fullerene derivative. The second semiconductor region includes at least one selected from the group consisting of quinacridone and a quinacridone derivative. A ratio of a weight of the second semiconductor region per unit volume to a weight of the first semiconductor region per unit volume in the intermediate layer is greater than 5.

Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.

Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.

Abstract: A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.

Abstract: According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 ?m or more.

Abstract: A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.

Abstract: According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.

Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.

Abstract: According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 ?m or more.

Abstract: According to one embodiment, a radiation detector includes a first member, a first electrode, a second electrode, and an organic photoelectric conversion layer. The first member converts radiation into light and has a first surface. The first surface includes a first portion and a second portion. The first electrode is provided at the first portion. The second electrode is provided at the second portion. A first intermediate region of the organic photoelectric conversion layer is provided between the first electrode and the second electrode.

Abstract: According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.

Abstract: According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.

Abstract: According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first metal layer, a second metal layer, and an organic semiconductor layer provided between the first metal layer and the second metal layer.

Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.

Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and an intermediate layer provided between the first conductive layer and the second conductive layer. The intermediate layer includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of an n-type, and the second semiconductor region is of a p-type. The first semiconductor region includes at least one selected from the group consisting of fullerene and a fullerene derivative. The second semiconductor region includes at least one selected from the group consisting of quinacridone and a quinacridone derivative. A ratio of a weight of the second semiconductor region per unit volume to a weight of the first semiconductor region per unit volume in the intermediate layer is greater than 5.

Abstract: According to one embodiment, a photoelectric conversion device includes a first electrode, a second electrode, a photoelectric conversion layer provided between the first electrode and the second electrode, and a first layer provided between the second electrode and the photoelectric conversion layer, the first layer including a phenyl pyridine derivative. The phenyl pyridine derivative is represented by formula (1) below, Rings A, B, C, and D in the formula (1) are pyridine rings. Each of R1 to R11 in the formula (1) is one selected from the group consisting of hydrogen, a straight-chain alkyl group, a branched alkyl group, an aryl group, and an electron-withdrawing heteroaryl group.