Patents by Inventor Isao Takasu

Isao Takasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10186555
    Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first and second conductive layers. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region includes a portion provided around the particles. The organic semiconductor region includes first and second semiconductor regions. The first semiconductor region has a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital. The second semiconductor region has a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital. The particles have a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital. The first highest occupied molecular orbital is lower than the third highest occupied molecular orbital.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: January 22, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Isao Takasu, Satomi Taguchi, Atsushi Wada, Mitsuyoshi Kobayashi
  • Publication number: 20180277607
    Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first and second conductive layers. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region includes a portion provided around the particles. The organic semiconductor region includes first and second semiconductor regions. The first semiconductor region has a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital. The second semiconductor region has a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital. The particles have a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital. The first highest occupied molecular orbital is lower than the third highest occupied molecular orbital.
    Type: Application
    Filed: August 25, 2017
    Publication date: September 27, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Isao TAKASU, Satomi Taguchi, Atsushi Wada, Mitsuyoshi Kobayashi
  • Publication number: 20180277779
    Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first conductive layer and the second conductive layer. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region including a portion provided around the particles. A diameter is not less than 1 nanometer and not more than 20 nanometers for at least a portion of the particles. A first bandgap energy of the plurality of particles is larger than a second bandgap energy of the organic semiconductor region.
    Type: Application
    Filed: August 24, 2017
    Publication date: September 27, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Isao TAKASU, Atsushi Wada, Satomi Taguchi, Mitsuyoshi Kobayashi
  • Publication number: 20180269415
    Abstract: According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.
    Type: Application
    Filed: August 31, 2017
    Publication date: September 20, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Mitsuyoshi KOBAYASHI, Satomi TAGUCHI, Isao TAKASU, Rei HASEGAWA
  • Publication number: 20180254420
    Abstract: According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first metal layer, a second metal layer, and an organic semiconductor layer provided between the first metal layer and the second metal layer.
    Type: Application
    Filed: August 31, 2017
    Publication date: September 6, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satomi TAGUCHI, Atsushi WADA, Isao TAKASU, Mitsuyoshi KOBAYASHI
  • Publication number: 20180182962
    Abstract: An organic photoelectric conversion device of the embodiment includes an anode, a cathode, and an organic photoelectric conversion layer provided between the anode and the cathode. The organic photoelectric conversion layer contains a compound represented by the following general formula (1). [In the general formula (1), U, V, and W each independently represents a nitrogen-containing 6-membered aromatic ring which may have a substituent or a benzene ring which may have a substituent, at least one of U, V and W represents the nitrogen-containing 6-membered aromatic ring which may have a substituent, X represents any one of a halogen atom, a hydroxyl group, a carboxyl group, an alkyl group which may have a substituent, an aryl group which may have a substituent, an alkoxy group which may have a substituent, and an aryloxy group which may have a substituent.
    Type: Application
    Filed: August 6, 2015
    Publication date: June 28, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Isao TAKASU, Atsushi WADA, Yuko NOMURA, Machiko ITO, Fumihiko AIGA
  • Publication number: 20180156930
    Abstract: According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first scintillator layer, a first conductive layer, a second conductive layer and an organic semiconductor layer. The second conductive layer is provided between the first scintillator layer and the first conductive layer. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first element. The first element includes at least one selected from the group consisting of boron, gadolinium, helium, lithium, and cadmium.
    Type: Application
    Filed: August 31, 2017
    Publication date: June 7, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satomi TAGUCHI, Atsushi WADA, Isao TAKASU, Naoto KUME, Mitsuyoshi KOBAYASHI
  • Publication number: 20180143329
    Abstract: According to one embodiment, a radiation detector includes a scintillator layer, a first conductive layer, a second conductive layer, and an organic layer. The second conductive layer is provided between the scintillator layer and the first conductive layer. The organic layer is provided between the first conductive layer and the second conductive layer. The organic layer includes an organic semiconductor region having a first thickness. The first thickness is 400 nanometers or more.
    Type: Application
    Filed: August 23, 2017
    Publication date: May 24, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Isao TAKASU, Satomi Taguchi, Mitsuyoshi Kobayashi, Atsushi Wada, Yuko Nomura, Keiji Sugi, Rei Hasegawa, Naoto Kume
  • Patent number: 9853223
    Abstract: A compound of the embodiment includes the structure represented by the following general formula (1). In the general formula (1), R1 to R4 respectively independently represent a hydrogen atom, a linear or branched alkyl group, a fluoroalkyl group, or an aryl group.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: December 26, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Atsushi Wada, Isao Takasu, Honam Kwon, Satomi Taguchi
  • Patent number: 9721994
    Abstract: According to an embodiment, a semiconductor device includes a silicon substrate, a photoelectric conversion layer, a termination layer, and an electrode layer. In the silicon substrate, first semiconductor regions and second semiconductor regions are alternately arranged along a first surface on a light incident side of the silicon substrate. The first semiconductor regions are doped with impurities of first concentration and have a conductivity of either one of p-type and n-type. The second semiconductor regions are doped with impurities of a second concentration lower than the first concentration and have a conductivity of the other type. The photoelectric conversion layer is disposed on a first surface side of the silicon substrate. The termination layer is disposed between the silicon substrate and the photoelectric conversion layer, in contact with the first surface, and to terminate dangling bonds of the silicon substrate. The electrode layer is provided on the light incident side.
    Type: Grant
    Filed: November 17, 2015
    Date of Patent: August 1, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takashi Miyazaki, Hideyuki Funaki, Yoshinori Iida, Isao Takasu, Yuki Nobusa
  • Publication number: 20170110517
    Abstract: According to one embodiment, a photoelectric conversion device includes a first electrode, a second electrode, a photoelectric conversion layer provided between the first electrode and the second electrode, and a first layer provided between the second electrode and the photoelectric conversion layer, the first layer including a phenyl pyridine derivative. The phenyl pyridine derivative is represented by formula (1) below, Rings A, B, C, and D in the formula (1) are pyridine rings. Each of R1 to R11 in the formula (1) is one selected from the group consisting of hydrogen, a straight-chain alkyl group, a branched alkyl group, an aryl group, and an electron-withdrawing heteroaryl group.
    Type: Application
    Filed: September 16, 2016
    Publication date: April 20, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Atsushi WADA, Isao Takasu, Satomi Taguchi
  • Publication number: 20170077431
    Abstract: According to one embodiment, an organic photoelectric conversion device includes: an organic photoelectric conversion layer, a metal-oxide layer, and a buffer layer. The metal-oxide layer includes metal oxide. The buffer layer is provided between the organic photoelectric conversion layer and the metal-oxide layer. The buffer layer includes a material having a property of blocking an exciton, and a glass transition temperature of the material is higher than or equal to 415K.
    Type: Application
    Filed: September 8, 2016
    Publication date: March 16, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yukitami MIZUNO, Isao TAKASU, Atsushi WADA
  • Publication number: 20170069851
    Abstract: An organic photoelectric conversion devise of the embodiment includes a charge transport layer comprised of a plurality of isomers containing a compound represented by a following general formula (1) and an enantiomer of the following general formula (1). In the general formula (1), A1, A2 and A3 respectively represent a different substituent group.
    Type: Application
    Filed: August 12, 2016
    Publication date: March 9, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Isao TAKASU, Atsushi WADA, Machiko ITO, Satomi TAGUCHI, Fumihiko AIGA
  • Publication number: 20160247860
    Abstract: According to one embodiment, a solid-state image sensing device includes an organic photoelectric conversion layer. The organic photoelectric conversion layer includes an organic semiconductor material and an organic dye. The organic semiconductor material selectively absorbs light having one of three primary colors selected from blue light, green light, and red light. The organic semiconductor material allows the other two of primary colors of light to be transmitted therethrough. The organic dye is dispersed in the organic semiconductor material. The organic dye receives energy less than excitation energy of the organic semiconductor material.
    Type: Application
    Filed: February 19, 2016
    Publication date: August 25, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Machiko ITO, Isao Takasu, Atsushi Wada, Yoshinori Iida
  • Patent number: 9153792
    Abstract: According to one embodiment, in an organic electroluminescence device, a first substrate has a first refractive index n1. A second substrate is joined to an upper surface of the first substrate and has a second refractive index n2 higher than the first refractive index n1. Multiple wedge-shaped metal lines are buried in the second substrate in such a manner that one side of the wedge-shaped metal line is flush with an upper surface of the second substrate. A transparent electrode is formed on the upper surface of the second substrate and the multiple metal lines. An insulating layer is formed on a portion of the transparent electrode opposed to the multiple metal lines. An organic light emitting layer is formed on the transparent electrode on which the insulating layer is formed. A metal electrode is formed on the organic light emitting layer.
    Type: Grant
    Filed: April 7, 2011
    Date of Patent: October 6, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomio Ono, Shintaro Enomoto, Yukitami Mizuno, Isao Takasu, Yasushi Shinjiyo, Shuichi Uchikoga
  • Publication number: 20150270315
    Abstract: According to one embodiment, an organic photoelectric conversion element has a positive electrode, a first charge transport layer, an organic photoelectric conversion, a second charge transport layer and a negative electrode, in this order. The first charge transport layer contains a first charge transport material having a LUMO level equal to or greater than that of the organic photoelectric conversion layer. The second charge transport layer contains a second charge transport material having a HOMO level equal to or less than that of the organic photoelectric conversion layer. The first charge transport layer contains an electron trapping/scattering material that has a HOMO level which is +0.5 eV or more, or ?0.5 eV or less, than the HOMO level of the first charge transport material, and has a LUMO level which is between ?0.5 eV to +0.5 eV of the LUMO level of the first electron transport material.
    Type: Application
    Filed: December 19, 2014
    Publication date: September 24, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Isao TAKASU, Atsushi WADA, Yuko NOMURA, Machiko ITO
  • Patent number: 9136485
    Abstract: According to one embodiment, there is provided a compound represented by Formula (1): where Cu+ represents a copper ion, each of R1 and R2 represents a linear, branched or cyclic alkyl group or an aromatic cyclic group which may have a substituent, each of R3, R4, R5 and R6 represents a halogen atom, a cyano group, a nitro group, a linear, branched or cyclic alkyl group or H, and X? represents a counter ion where X is selected from the group consisting of F, Cl, Br, I, BF4, PF6, CH3CO2, CF3CO2, CF3SO3 and ClO4.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: September 15, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Atsushi Wada, Yukitami Mizuno, Tomoaki Sawabe, Isao Takasu, Tomoko Sugizaki, Shintaro Enomoto
  • Patent number: 8808876
    Abstract: A light-emitting compound includes two or more carbazole skeletons each having two or more fluorine atoms at 2-, 4-, 5- and 7-positions, the carbazole skeleton represented by the formula (1): where two or more of R2, R4, R5 and R7 are F and a remainder is H.
    Type: Grant
    Filed: November 11, 2009
    Date of Patent: August 19, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Isao Takasu, Ryoko Iida, Yukitami Mizuno, Shintaro Enomoto, Shuichi Uchikoga
  • Patent number: 8722206
    Abstract: According to one embodiment, an organic light-emitting diode includes an anode and a cathode arranged apart from each other, an emission layer, arranged between the anode and cathode, containing a host material of polyvinyl(2,7-difluorocarbazole), a blue-emitting phosphorescent material, and an electron transport material, and a hole transport layer of polyvinylcarbazole arranged adjacent to the emission layer on an anode side.
    Type: Grant
    Filed: September 7, 2010
    Date of Patent: May 13, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomio Ono, Shintaro Enomoto, Isao Takasu, Yukitami Mizuno, Shuichi Uchikoga
  • Patent number: 8679646
    Abstract: According to one embodiment, there is provided an organic light-emitting diode including an anode and a cathode arranged apart from each other, and an emissive layer interposed between the anode and the cathode and including a host material and an emitting dopant. The emitting dopant includes a copper complex represented by the formula (1): where Cu+ represents a copper ion, the ligand A represents a pyridine derivative having nitrogen as a coordinate element and may have a substituent, PR1R2R3 is a phosphine compound coordinating with Cu+, where R1, R2 and R3 may be the same or different, and represent a linear, branched or cyclic alkyl group having 6 or less carbon atoms or an aromatic cyclic group which may have a substituent, and X? represents a counter ion (counterion) where X represents F, Cl, Br, I, BF4, PF6, CH3CO2, CF3CO2, CF3SO3 or ClO4.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: March 25, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Atsushi Wada, Yukitami Mizuno, Tomoaki Sawabe, Isao Takasu, Tomoko Sugizaki, Shintaro Enomoto, Isao Amemiya