Patents by Inventor Isao Takasu
Isao Takasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10186555Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first and second conductive layers. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region includes a portion provided around the particles. The organic semiconductor region includes first and second semiconductor regions. The first semiconductor region has a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital. The second semiconductor region has a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital. The particles have a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital. The first highest occupied molecular orbital is lower than the third highest occupied molecular orbital.Type: GrantFiled: August 25, 2017Date of Patent: January 22, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Isao Takasu, Satomi Taguchi, Atsushi Wada, Mitsuyoshi Kobayashi
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Publication number: 20180277607Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first and second conductive layers. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region includes a portion provided around the particles. The organic semiconductor region includes first and second semiconductor regions. The first semiconductor region has a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital. The second semiconductor region has a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital. The particles have a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital. The first highest occupied molecular orbital is lower than the third highest occupied molecular orbital.Type: ApplicationFiled: August 25, 2017Publication date: September 27, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Isao TAKASU, Satomi Taguchi, Atsushi Wada, Mitsuyoshi Kobayashi
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Publication number: 20180277779Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first conductive layer and the second conductive layer. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region including a portion provided around the particles. A diameter is not less than 1 nanometer and not more than 20 nanometers for at least a portion of the particles. A first bandgap energy of the plurality of particles is larger than a second bandgap energy of the organic semiconductor region.Type: ApplicationFiled: August 24, 2017Publication date: September 27, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Isao TAKASU, Atsushi Wada, Satomi Taguchi, Mitsuyoshi Kobayashi
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Publication number: 20180269415Abstract: According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.Type: ApplicationFiled: August 31, 2017Publication date: September 20, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Mitsuyoshi KOBAYASHI, Satomi TAGUCHI, Isao TAKASU, Rei HASEGAWA
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Publication number: 20180254420Abstract: According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first metal layer, a second metal layer, and an organic semiconductor layer provided between the first metal layer and the second metal layer.Type: ApplicationFiled: August 31, 2017Publication date: September 6, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Satomi TAGUCHI, Atsushi WADA, Isao TAKASU, Mitsuyoshi KOBAYASHI
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Publication number: 20180182962Abstract: An organic photoelectric conversion device of the embodiment includes an anode, a cathode, and an organic photoelectric conversion layer provided between the anode and the cathode. The organic photoelectric conversion layer contains a compound represented by the following general formula (1). [In the general formula (1), U, V, and W each independently represents a nitrogen-containing 6-membered aromatic ring which may have a substituent or a benzene ring which may have a substituent, at least one of U, V and W represents the nitrogen-containing 6-membered aromatic ring which may have a substituent, X represents any one of a halogen atom, a hydroxyl group, a carboxyl group, an alkyl group which may have a substituent, an aryl group which may have a substituent, an alkoxy group which may have a substituent, and an aryloxy group which may have a substituent.Type: ApplicationFiled: August 6, 2015Publication date: June 28, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Isao TAKASU, Atsushi WADA, Yuko NOMURA, Machiko ITO, Fumihiko AIGA
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Publication number: 20180156930Abstract: According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first scintillator layer, a first conductive layer, a second conductive layer and an organic semiconductor layer. The second conductive layer is provided between the first scintillator layer and the first conductive layer. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first element. The first element includes at least one selected from the group consisting of boron, gadolinium, helium, lithium, and cadmium.Type: ApplicationFiled: August 31, 2017Publication date: June 7, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Satomi TAGUCHI, Atsushi WADA, Isao TAKASU, Naoto KUME, Mitsuyoshi KOBAYASHI
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Publication number: 20180143329Abstract: According to one embodiment, a radiation detector includes a scintillator layer, a first conductive layer, a second conductive layer, and an organic layer. The second conductive layer is provided between the scintillator layer and the first conductive layer. The organic layer is provided between the first conductive layer and the second conductive layer. The organic layer includes an organic semiconductor region having a first thickness. The first thickness is 400 nanometers or more.Type: ApplicationFiled: August 23, 2017Publication date: May 24, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Isao TAKASU, Satomi Taguchi, Mitsuyoshi Kobayashi, Atsushi Wada, Yuko Nomura, Keiji Sugi, Rei Hasegawa, Naoto Kume
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Patent number: 9853223Abstract: A compound of the embodiment includes the structure represented by the following general formula (1). In the general formula (1), R1 to R4 respectively independently represent a hydrogen atom, a linear or branched alkyl group, a fluoroalkyl group, or an aryl group.Type: GrantFiled: May 23, 2016Date of Patent: December 26, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Atsushi Wada, Isao Takasu, Honam Kwon, Satomi Taguchi
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Patent number: 9721994Abstract: According to an embodiment, a semiconductor device includes a silicon substrate, a photoelectric conversion layer, a termination layer, and an electrode layer. In the silicon substrate, first semiconductor regions and second semiconductor regions are alternately arranged along a first surface on a light incident side of the silicon substrate. The first semiconductor regions are doped with impurities of first concentration and have a conductivity of either one of p-type and n-type. The second semiconductor regions are doped with impurities of a second concentration lower than the first concentration and have a conductivity of the other type. The photoelectric conversion layer is disposed on a first surface side of the silicon substrate. The termination layer is disposed between the silicon substrate and the photoelectric conversion layer, in contact with the first surface, and to terminate dangling bonds of the silicon substrate. The electrode layer is provided on the light incident side.Type: GrantFiled: November 17, 2015Date of Patent: August 1, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Takashi Miyazaki, Hideyuki Funaki, Yoshinori Iida, Isao Takasu, Yuki Nobusa
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Publication number: 20170110517Abstract: According to one embodiment, a photoelectric conversion device includes a first electrode, a second electrode, a photoelectric conversion layer provided between the first electrode and the second electrode, and a first layer provided between the second electrode and the photoelectric conversion layer, the first layer including a phenyl pyridine derivative. The phenyl pyridine derivative is represented by formula (1) below, Rings A, B, C, and D in the formula (1) are pyridine rings. Each of R1 to R11 in the formula (1) is one selected from the group consisting of hydrogen, a straight-chain alkyl group, a branched alkyl group, an aryl group, and an electron-withdrawing heteroaryl group.Type: ApplicationFiled: September 16, 2016Publication date: April 20, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Atsushi WADA, Isao Takasu, Satomi Taguchi
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Publication number: 20170077431Abstract: According to one embodiment, an organic photoelectric conversion device includes: an organic photoelectric conversion layer, a metal-oxide layer, and a buffer layer. The metal-oxide layer includes metal oxide. The buffer layer is provided between the organic photoelectric conversion layer and the metal-oxide layer. The buffer layer includes a material having a property of blocking an exciton, and a glass transition temperature of the material is higher than or equal to 415K.Type: ApplicationFiled: September 8, 2016Publication date: March 16, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Yukitami MIZUNO, Isao TAKASU, Atsushi WADA
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Publication number: 20170069851Abstract: An organic photoelectric conversion devise of the embodiment includes a charge transport layer comprised of a plurality of isomers containing a compound represented by a following general formula (1) and an enantiomer of the following general formula (1). In the general formula (1), A1, A2 and A3 respectively represent a different substituent group.Type: ApplicationFiled: August 12, 2016Publication date: March 9, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Isao TAKASU, Atsushi WADA, Machiko ITO, Satomi TAGUCHI, Fumihiko AIGA
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Publication number: 20160247860Abstract: According to one embodiment, a solid-state image sensing device includes an organic photoelectric conversion layer. The organic photoelectric conversion layer includes an organic semiconductor material and an organic dye. The organic semiconductor material selectively absorbs light having one of three primary colors selected from blue light, green light, and red light. The organic semiconductor material allows the other two of primary colors of light to be transmitted therethrough. The organic dye is dispersed in the organic semiconductor material. The organic dye receives energy less than excitation energy of the organic semiconductor material.Type: ApplicationFiled: February 19, 2016Publication date: August 25, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Machiko ITO, Isao Takasu, Atsushi Wada, Yoshinori Iida
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Patent number: 9153792Abstract: According to one embodiment, in an organic electroluminescence device, a first substrate has a first refractive index n1. A second substrate is joined to an upper surface of the first substrate and has a second refractive index n2 higher than the first refractive index n1. Multiple wedge-shaped metal lines are buried in the second substrate in such a manner that one side of the wedge-shaped metal line is flush with an upper surface of the second substrate. A transparent electrode is formed on the upper surface of the second substrate and the multiple metal lines. An insulating layer is formed on a portion of the transparent electrode opposed to the multiple metal lines. An organic light emitting layer is formed on the transparent electrode on which the insulating layer is formed. A metal electrode is formed on the organic light emitting layer.Type: GrantFiled: April 7, 2011Date of Patent: October 6, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Tomio Ono, Shintaro Enomoto, Yukitami Mizuno, Isao Takasu, Yasushi Shinjiyo, Shuichi Uchikoga
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Publication number: 20150270315Abstract: According to one embodiment, an organic photoelectric conversion element has a positive electrode, a first charge transport layer, an organic photoelectric conversion, a second charge transport layer and a negative electrode, in this order. The first charge transport layer contains a first charge transport material having a LUMO level equal to or greater than that of the organic photoelectric conversion layer. The second charge transport layer contains a second charge transport material having a HOMO level equal to or less than that of the organic photoelectric conversion layer. The first charge transport layer contains an electron trapping/scattering material that has a HOMO level which is +0.5 eV or more, or ?0.5 eV or less, than the HOMO level of the first charge transport material, and has a LUMO level which is between ?0.5 eV to +0.5 eV of the LUMO level of the first electron transport material.Type: ApplicationFiled: December 19, 2014Publication date: September 24, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Isao TAKASU, Atsushi WADA, Yuko NOMURA, Machiko ITO
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Patent number: 9136485Abstract: According to one embodiment, there is provided a compound represented by Formula (1): where Cu+ represents a copper ion, each of R1 and R2 represents a linear, branched or cyclic alkyl group or an aromatic cyclic group which may have a substituent, each of R3, R4, R5 and R6 represents a halogen atom, a cyano group, a nitro group, a linear, branched or cyclic alkyl group or H, and X? represents a counter ion where X is selected from the group consisting of F, Cl, Br, I, BF4, PF6, CH3CO2, CF3CO2, CF3SO3 and ClO4.Type: GrantFiled: September 15, 2011Date of Patent: September 15, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Atsushi Wada, Yukitami Mizuno, Tomoaki Sawabe, Isao Takasu, Tomoko Sugizaki, Shintaro Enomoto
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Patent number: 8808876Abstract: A light-emitting compound includes two or more carbazole skeletons each having two or more fluorine atoms at 2-, 4-, 5- and 7-positions, the carbazole skeleton represented by the formula (1): where two or more of R2, R4, R5 and R7 are F and a remainder is H.Type: GrantFiled: November 11, 2009Date of Patent: August 19, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Isao Takasu, Ryoko Iida, Yukitami Mizuno, Shintaro Enomoto, Shuichi Uchikoga
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Patent number: 8722206Abstract: According to one embodiment, an organic light-emitting diode includes an anode and a cathode arranged apart from each other, an emission layer, arranged between the anode and cathode, containing a host material of polyvinyl(2,7-difluorocarbazole), a blue-emitting phosphorescent material, and an electron transport material, and a hole transport layer of polyvinylcarbazole arranged adjacent to the emission layer on an anode side.Type: GrantFiled: September 7, 2010Date of Patent: May 13, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Tomio Ono, Shintaro Enomoto, Isao Takasu, Yukitami Mizuno, Shuichi Uchikoga
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Patent number: 8679646Abstract: According to one embodiment, there is provided an organic light-emitting diode including an anode and a cathode arranged apart from each other, and an emissive layer interposed between the anode and the cathode and including a host material and an emitting dopant. The emitting dopant includes a copper complex represented by the formula (1): where Cu+ represents a copper ion, the ligand A represents a pyridine derivative having nitrogen as a coordinate element and may have a substituent, PR1R2R3 is a phosphine compound coordinating with Cu+, where R1, R2 and R3 may be the same or different, and represent a linear, branched or cyclic alkyl group having 6 or less carbon atoms or an aromatic cyclic group which may have a substituent, and X? represents a counter ion (counterion) where X represents F, Cl, Br, I, BF4, PF6, CH3CO2, CF3CO2, CF3SO3 or ClO4.Type: GrantFiled: September 3, 2010Date of Patent: March 25, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Atsushi Wada, Yukitami Mizuno, Tomoaki Sawabe, Isao Takasu, Tomoko Sugizaki, Shintaro Enomoto, Isao Amemiya