Patents by Inventor Isao Yamada

Isao Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100320380
    Abstract: A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes an electric field applying part including two electrodes across which electric voltage is applied in order to generate electric field between the two electrodes thereby deflecting a trajectory of the ionized gas cluster, the electrodes including one of an opening and a void; and a plate opening that allows the ionized gas cluster whose trajectory is deflected by the electric field applying part to go therethrough.
    Type: Application
    Filed: June 16, 2010
    Publication date: December 23, 2010
    Applicants: TOKYO ELECTRON LIMITED, HYOGO PREFECTURE
    Inventors: Masaki Narushima, Koichi Mori, Isao Yamada, Noriaki Toyoda
  • Publication number: 20100319545
    Abstract: A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes three or more electric field applying parts arranged in an incident direction of an ionized gas cluster, wherein each of the electric field applying parts includes a pair of electrodes; an electric power source configured to supply alternating-current electric voltages to the three or more electric field applying parts in such a manner that an alternating-current electric voltage applied across one pair of the electrodes of one of the three or more electric field applying parts is different in phase from an alternating-current voltage applied across another pair of the electrodes of an adjacent one of the three or more electric field applying parts; and a plate including an opening in an extension of the incident direction.
    Type: Application
    Filed: June 18, 2010
    Publication date: December 23, 2010
    Applicants: TOKYO ELECTRON LIMITED, HYOGO PREFECTURE
    Inventors: MASAKI NARUSHIMA, Koichi Mori, Isao Yamada, Noriaki Toyoda
  • Patent number: 7763180
    Abstract: The present invention provides a wrinkle-removing composition capable of removing wrinkles in fiber products without deteriorating the texture, even if heat treatment such as ironing and steam pressing is not carried out. The present relates to a wrinkle-removing composition containing an alkylene oxide adduct (a) represented by a specific general formula (1) or a general formula (2) or (3), as well as a method of removing wrinkles in fiber products, which includes applying the wrinkle-removing composition onto fiber products.
    Type: Grant
    Filed: September 7, 2005
    Date of Patent: July 27, 2010
    Assignee: Kao Corporation
    Inventors: Atsushi Tanaka, Isao Yamada
  • Patent number: 7707605
    Abstract: A liquid crystal display includes a liquid crystal display panel having a plurality of pixels on a display line. A set of drivers drives a set of pixels, the set of drivers receiving display data and providing video signals to the set of pixels. A clock provides a clock signal to the set of drivers to latch the display data based on a frequency of the clock signal, and receives a feedback signal from the set of drivers prior to an end of the display data received by the set of drivers. A delay circuit stops the clock signal to the set of drivers, based on the feedback signal, after delaying for a first time period that is no less than a predetermined time period between the feedback signal and the end of the display data received by the set of drivers.
    Type: Grant
    Filed: December 8, 2000
    Date of Patent: April 27, 2010
    Assignee: Sony Corporation
    Inventors: Isao Yamada, Jun Tanaka
  • Publication number: 20100041578
    Abstract: A detergent composition containing: (a) a nonionic surfactant containing a polyoxyalkylene alkyl ether of which alkylene oxide moiety has an average number of moles of from 4 to 8; (b) an anionic surfactant, excluding a fatty acid and a salt thereof; and (c) a clay mineral represented by the general formula (I): [Si8(MgaAlb)O20(OH)4]X?.MeX+??(I) wherein a, b and x satisfy 0<a?6, 0<b?4, and x=12?2a?3, and Me is at least one member selected from Na, K, Li, Ca, Mg and NH4, wherein the clay mineral is contained in an amount of 3% by weight or more, wherein a weight ratio of the component (a) to the component (b), (a)/(b), exceeds 1 and is less than 5.
    Type: Application
    Filed: January 30, 2008
    Publication date: February 18, 2010
    Inventors: Yuki Yanagisawa, Kuniaki Mitsuyoshi, Wataru Ueno, Isao Yamada, Teruo Kubota
  • Patent number: 7631329
    Abstract: In a television broadcasting system intended to present information pertaining to a main broadcast program to viewers, a ground-wave broadcast station produces and broadcasts the main program in the conventional manner and a CS (communication satellite) broadcast station which is supplied with main program composition information and various source data from the ground-wave station produces supplemental broadcast programs for the main program. The CS station also produces symbolic labels indicative of the content of the supplemental programs, and broadcasts the supplemental programs and symbolic labels together. An IRD (integrated receiver/decoder) unit of a viewer's receiver set receives the broadcast signals from the ground-wave station and CS station, and displays the main program and the symbolic labels of supplemental programs together on a display unit.
    Type: Grant
    Filed: July 6, 2000
    Date of Patent: December 8, 2009
    Assignee: Sony Corporation
    Inventor: Isao Yamada
  • Publication number: 20090250824
    Abstract: A semiconductor package comprises a substrate that utilizes one or more pins to form external interconnects. The pins are bonded to bonding pads on the substrate by solder. The pins may each has a pin head that may have a bonding surface, wherein the bonding surface may comprises a center portion and a side portion that is tapered away relative to the center portion. In some embodiments, the bonding surface may comprise a round shape. In some embodiments, a gas escape path may be provided by the shape of the bonding surface to increase pin pull strength and/or solder strength. The package may further comprise a surface finish that may comprise a palladium layer with a reduced thickness to reduce the amount of palladium based IMC precipitation into the solder.
    Type: Application
    Filed: April 4, 2008
    Publication date: October 8, 2009
    Inventors: Xiwang Qi, Charan K. Gurumurthy, Tamil Selvy Selvamuniandy, Isao Yamada
  • Publication number: 20090166864
    Abstract: A semiconductor package comprises a semiconductor die, a substrate that is coupled to the die, a trace formed in the substrate that comprises a first conductive material, e.g., copper, doped with a second conductive material, e.g., aluminum, the first conductive material has a first diffusivity that is lower than a second diffusivity of the second conductive material to prevent migration of the first conductive material.
    Type: Application
    Filed: December 28, 2007
    Publication date: July 2, 2009
    Inventors: Mengzhi Pang, Isao Yamada
  • Patent number: 7420189
    Abstract: An ultra precise polishing method includes controlling an irradiation time of a surface position of an object to be processed irradiated by a gas cluster ion beam. A profile is created and polished on the surface of the object to be processed by controlling irradiation of the gas cluster ion beam. An ultra precise polishing apparatus includes an irradiating device for irradiating a surface of an object to be processed by a gas cluster ion beam. A positioning device is provided for changing a surface position of the object to be processed, which is irradiated by the gas cluster ion beam by moving the irradiating device and the object to be processed relative to each other. A control device is provided for controlling the irradiation time of a surface position of the object to be processed irradiated by the gas cluster ion beam.
    Type: Grant
    Filed: April 4, 2006
    Date of Patent: September 2, 2008
    Assignees: Olympus Corporation
    Inventors: Tomonori Imamura, Isao Yamada, Noriaki Toyoda
  • Publication number: 20080087861
    Abstract: The present invention provides a wrinkle-removing composition capable of removing wrinkles in fiber products without deteriorating the texture, even if heat treatment such as ironing and steam pressing is not carried out. The present relates to a wrinkle-removing composition containing an alkylene oxide adduct (a) represented by a specific general formula (1) or a general formula (2) or (3), as well as a method of removing wrinkles in fiber products, which includes applying the wrinkle-removing composition onto fiber products.
    Type: Application
    Filed: September 7, 2005
    Publication date: April 17, 2008
    Applicant: Kao Corporation
    Inventors: Atsushi Tanaka, Isao Yamada
  • Publication number: 20070227879
    Abstract: Irradiation time of a surface position of an object to be processed by a gas cluster ion beam is controlled, and creation and polishing of a desired surface profile of the object to be processed is achieved by controlled irradiation of the gas cluster ion beam.
    Type: Application
    Filed: April 4, 2006
    Publication date: October 4, 2007
    Inventors: Tomonori Imamura, Isao Yamada, Noriaki Toyoda
  • Publication number: 20070155154
    Abstract: According to some embodiments, a method, an apparatus, and a system are provided. In some embodiments, the method includes applying solder resist material on a surface of a substrate, applying a barrier layer on top of the solder resist material, applying at least one layer of mask material on top of the barrier layer, subjecting solder placed in an opening formed through the solder resist material, the barrier layer, and the mask material to a reflow process, and removing the mask material and the barrier layer from at least an area adjacent to the solder bump.
    Type: Application
    Filed: December 29, 2005
    Publication date: July 5, 2007
    Inventors: Mengzhi Pang, Isao Yamada
  • Patent number: 7197767
    Abstract: An information distribution system includes a portable electronic device, and an information management apparatus for storing both right information and information which corresponds to the portable electronic device and which indicates to whom a right belongs. By using a code unique to the portable electronic device to encrypt concert information as the right information to be offline-providable form, and providing a ticket code generated by the encryption so that it passes through an offline channel at least once, the distribution to each user of the encrypted information can be simplified.
    Type: Grant
    Filed: December 4, 2000
    Date of Patent: March 27, 2007
    Assignee: Sony Corporation
    Inventors: Susumu Kusakabe, Motoki Nakade, Isao Yamada
  • Patent number: 7022545
    Abstract: The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.
    Type: Grant
    Filed: January 10, 2003
    Date of Patent: April 4, 2006
    Assignee: Mitsui Engineering & Shipbuilding Co., Ltd.
    Inventors: Isao Yamada, Jiro Matsuo, Noriaki Toyoda, Kazutoshi Murata, Naomasa Miyatake
  • Patent number: 7003834
    Abstract: This invention provides a composition and a means being capable of easily recovering the color of faded clothes in home. The composition is a color recovering agent which comprises (a) a water-insoluble polymer with a refractive index of 1.20 to 1.45 at 25° C., (b) a compound or polymer having a molecular weight of 300 to 1,000 having specific groups such as amide group, (c) water and (d) a non-aqueous solvent, wherein the ratio of (a)/(b) by weight is in the range of 3/1 to 100/1.
    Type: Grant
    Filed: May 24, 2001
    Date of Patent: February 28, 2006
    Assignee: Kao Corporation
    Inventors: Isao Yamada, Norihiro Inoue, Yoichi Tsukiyama
  • Publication number: 20050042800
    Abstract: The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.
    Type: Application
    Filed: January 10, 2003
    Publication date: February 24, 2005
    Inventors: Isao Yamada, Jiro Matsuo, Noriaki Toyoda, Kazutoshi Murata, Naomasa Miyatake
  • Patent number: 6797334
    Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature, the present invention provides a method for forming a cluster which is a lumpy group of atoms or molecules of a reactive substance at the room temperature under the atmospheric pressure, irradiating electrons onto clusters, irradiating the resulting cluster ions onto a substrate surface by accelerating by an acceleration voltage, and at the same time or alternately, irradiating one or more component gases of the deposit film onto the substrate surface, thereby depositing a thin film on the substrate surface through reaction.
    Type: Grant
    Filed: August 27, 2003
    Date of Patent: September 28, 2004
    Assignees: Research Development Corporation of Japan, Sanyo Electric Co., Ltd.
    Inventors: Makoto Akizuki, Mitsuaki Harada, Satoru Ogasawara, Atsumasa Doi, Isao Yamada, Jiro Matsuo
  • Patent number: 6797339
    Abstract: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.
    Type: Grant
    Filed: January 27, 2003
    Date of Patent: September 28, 2004
    Assignees: Research Development Corporation of Japan, Sanyo Electric Co., Ltd.
    Inventors: Makoto Akizuki, Mitsuaki Harada, Atsumasa Doi, Isao Yamada
  • Publication number: 20040037970
    Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature,
    Type: Application
    Filed: August 27, 2003
    Publication date: February 26, 2004
    Inventors: Makoto Akizuki, Mitsuaki Harada, Satoru Ogasawara, Atsumasa Doi, Isao Yamada, Jiro Matsuo
  • Patent number: 6641937
    Abstract: The present invention is for a transparent conductive film of nitrogen-containing indium tin oxide 5 nm to 100 &mgr;m thick formed on a substrate. The process for producing the transparent film includes exciting the surface of the substrate in a vacuum and depositing vaporized indium tin oxide on the surface of the substrate. The surface may be excited with irradiation with an ion beam. The indium tin oxide may be deposited through vacuum deposition, laser abrasion, ion plating, ion beam deposition, or chemical vapor deposition. Vapor deposition of indium tin oxide may be performed using a sintered product of indium oxide and tin oxide or with indium metal and tin metal.
    Type: Grant
    Filed: November 9, 2000
    Date of Patent: November 4, 2003
    Assignee: Agency of Industrial Science and Technology
    Inventors: Masato Kiuchi, Kensuke Murai, Shigeharu Tamura, Norimasa Umesaki, Jiro Matsuo, Isao Yamada