Patents by Inventor Isao Yamada

Isao Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030143340
    Abstract: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction.
    Type: Application
    Filed: January 27, 2003
    Publication date: July 31, 2003
    Inventors: Makoto Akizuki, Mitsuaki Harada, Atsumasa Doi, Isao Yamada
  • Publication number: 20030141489
    Abstract: This invention provides a composition and a means being capable of easily recovering the color of faded clothes in home. The composition is a color recovering agent which comprises (a) a water-insoluble polymer with a refractive index of 1.20 to 1.45 at 25° C., (b) a compound or polymer having a molecular weight of 300 to 1,000 having specific groups such as amide group, (c) water and (d) a non-aqueous solvent, wherein the ratio of (a)/(b) by weight is in the range of 3/1 to 100/1.
    Type: Application
    Filed: December 13, 2002
    Publication date: July 31, 2003
    Inventors: Isao Yamada, Norihiro Inoue, Yoichi Tsukiyama
  • Publication number: 20030026990
    Abstract: A method for enabling the formation of a carbonaceous hard film having a high hardness, strong adherence to the substrate, a wide range of substrate compatibility, and structural stability, which can be formed at room temperature and may cover a large area. The method includes vapor depositing a hard film of a carbonaceous material onto a substrate under vacuum by depositing a vaporized, hydrogen free carbonaceous material, which may be ionized or non-ionized, onto the substrate surface while irradiating the carbonaceous material with gas cluster ions, generated by ionizing gas clusters to form the film.
    Type: Application
    Filed: May 17, 2002
    Publication date: February 6, 2003
    Inventors: Isao Yamada, Jiro Matsuo, Teruyuki Kitagawa, Allen R. Kirkpatrick
  • Patent number: 6486478
    Abstract: An apparatus for smoothing a surface of a substrate includes an ionizer to form gas cluster particles; a power supply to accelerate the gas cluster particles; a triode/Einzel lens combination assembly to focus the accelerated gas cluster particles; a permanent magnet beam filter; scan plates to irradiate the filtered accelerated gas cluster particles onto a surface of a workpiece situated in a reduced pressure atmosphere chamber; and a substrate loading/unloading mechanism to load and unload the workpiece. The ionizer includes an alignment device wherein the alignment device includes a X/Y translation element and an angular translation element. The substrate loading/unloading mechanism provides a workpiece from a plurality of workpieces onto a holder positioned at a first position within the reduced pressure atmosphere chamber, the first position being substantially parallel to a central axis of a flow of the filtered accelerated gas cluster particles.
    Type: Grant
    Filed: December 6, 2000
    Date of Patent: November 26, 2002
    Assignee: Epion Corporation
    Inventors: Bruce K. Libby, Isao Yamada, James A. Greer, Lester G. Crawford, James G. Bachand, Matthew C. Gwinn, Richard P. Torti
  • Patent number: 6486068
    Abstract: A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.
    Type: Grant
    Filed: January 8, 1998
    Date of Patent: November 26, 2002
    Assignees: Toyoda Gosei Co., Ltd., Japan Science and Technology
    Inventors: Shiro Yamasaki, Seiji Nagai, Masayoshi Koike, Isamu Akasaki, Hiroshi Amano, Isao Yamada, Jiro Matsuo
  • Patent number: 6416820
    Abstract: A method for enabling the formation of a carbonaceous hard film having a high hardness, strong adherence to the substrate, a wide range of substrate compatibility, and structural stability, which can be formed at room temperature and may cover a large area. The method includes vapor depositing a hard film of a carbonaceous material onto a substrate under vacuum by depositing a vaporized, hydrogen free carbonaceous material, which may be ionized or non-ionized, onto the substrate surface while irradiating the carbonaceous material with gas cluster ions, generated by ionizing gas clusters to form the film.
    Type: Grant
    Filed: November 19, 1999
    Date of Patent: July 9, 2002
    Assignee: Epion Corporation
    Inventors: Isao Yamada, Jiro Matsuo, Teruyuki Kitagawa, Allen Kirkpatrick
  • Publication number: 20020068128
    Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature, the present invention provides a method for forming a cluster which is a lumpy group of atoms or molecules of a reactive substance at the room temperature under the atmospheric pressure, irradiating electrons onto clusters, irradiating the resulting cluster ions onto a substrate surface by accelerating by an acceleration voltage, and at the same time or alternately, irradiating one or more component gases of the deposit film onto the substrate surface, thereby depositing a thin film on the substrate surface through reaction.
    Type: Application
    Filed: December 26, 2001
    Publication date: June 6, 2002
    Inventors: Makoto Akizuki, Mitsuaki Harada, Satoru Ogasawara, Atsumasa Doi, Isao Yamada, Jiro Matsuo
  • Publication number: 20020015803
    Abstract: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction.
    Type: Application
    Filed: July 30, 2001
    Publication date: February 7, 2002
    Inventors: Makoto Akizuki, Mitsuaki Harada, Atsumasa Doi, Isao Yamada
  • Publication number: 20020006726
    Abstract: A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.
    Type: Application
    Filed: January 8, 1998
    Publication date: January 17, 2002
    Inventors: SHIRO YAMASAKI, SEIJI NAGAI, MASAYOSHI KOIKE, ISAMU AKASAKI, HIROSHI AMANO, ISAO YAMADA, JIRO MASUO
  • Publication number: 20010032250
    Abstract: An information distribution system includes a portable electronic device, and an information management apparatus for storing both right information and information which corresponds to the portable electronic device and which indicates to whom a right belongs.
    Type: Application
    Filed: December 4, 2000
    Publication date: October 18, 2001
    Inventors: Susumu Kusakabe, Motoki Nakade, Isao Yamada
  • Publication number: 20010014906
    Abstract: A data transmission method and system, information processing method and system, data transmitter, signal processor, content data processing method, and data serving method, which combine broadcasted content and content obtained from package media by a television game system or the like to provide new content, enabling a broadcasting station system to transmit program data containing main program data plus data for controlling a game system and a synthesizer in a home system and complementary data provided for processing there and enabling the home system receiving this at a communication portion to demultiplex the data at the synthesizer, control a game system console, combine the data input from the game system console and the received data in a desired format, and display it on a monitor, whereby for example processing for replacing a host of the broadcasted program by a character of the television game becomes possible.
    Type: Application
    Filed: December 8, 2000
    Publication date: August 16, 2001
    Inventors: Isao Yamada, Jun Tanaka
  • Publication number: 20010010835
    Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature,
    Type: Application
    Filed: March 7, 2001
    Publication date: August 2, 2001
    Inventors: Makoto Akizuki, Mitsuaki Harada, Satoru Ogasawara, Atsumasa Doi, Isao Yamada, Jiro Matsuo
  • Patent number: 6013332
    Abstract: A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.
    Type: Grant
    Filed: December 6, 1996
    Date of Patent: January 11, 2000
    Assignees: Fujitsu Limited, Japan Science and Technology Corporation
    Inventors: Kenichi Goto, Masataka Kase, Jiro Matsuo, Isao Yamada, Daisuke Takeuchi, Noriaki Toyoda, Norihiro Shimada
  • Patent number: 5844250
    Abstract: A process for manufacturing a field emission element including a substrate, and an emitter and a gate each arranged on the substrate is provided. The emitter is formed at at least a tip portion thereof with an electron discharge section, which is formed of metal or semiconductor into a monocrystalline structure or a polycrystalline structure preferentially oriented in at least a direction perpendicular to the substrate by deposition.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: December 1, 1998
    Assignee: Futaba Denshi Kogyo K.K,
    Inventors: Shigeo Itoh, Isao Yamada
  • Patent number: 5832919
    Abstract: A portable enclosure system and method for providing a suitable breathing atmosphere therein includes a chamber. The chamber may assume a variety of shapes. An electric fan and filter assembly is provided and is attached to the chamber by way of a flexible air hose. The fan draws air into the fan and filter assembly and exhausts it into the air hose through a filter. The filtered air travels into the chamber thus providing a positive pressure within the chamber. The positive pressure within the chamber forces unwanted particulates out of the chamber by way of exhaust ports and prevents unwanted particulates from entering the chamber. In providing an enclosure filled with a suitable breathing environment, the chamber is placed on a substantially flat surface. The fan is turned on and the chamber is allowed to be purged of unwanted allergens. The fan remains on to maintain a positive pressure within the chamber and provide a steady supply of fresh filtered air.
    Type: Grant
    Filed: April 16, 1996
    Date of Patent: November 10, 1998
    Inventors: Yoshimi Kano, Isao Yamada
  • Patent number: 5584739
    Abstract: A process for manufacturing a field emission element including a substrate, and an emitter and a gate each arranged on the substrate is provided. The emitter is formed at at least a tip portion thereof with an electron discharge section, which is formed of metal or semiconductor into a monocrystalline structure or a polycrystalline structure preferentially oriented in at least a direction perpendicular to the substrate by deposition.
    Type: Grant
    Filed: February 8, 1994
    Date of Patent: December 17, 1996
    Assignee: Futaba Denshi Kogyo K.K
    Inventors: Shigeo Itoh, Isao Yamada
  • Patent number: 5459326
    Abstract: A method of treating the surface of a substrate using an extra-low-speed ion beam. The method involves forming a cluster, which is a lump-shaped group of atoms or molecules of a gaseous substance at the ambient temperature, by adiabatic expansion form a high pressure region into a high-vacuum region thorough a small-bore conical nozzle, pouring electrons onto the cluster, accelerating the thus generated cluster ions by acceleration voltage, and irradiating the ions onto the surface of a solid. The method permits surface cleaning of a substrate without causing damage or defects, ion injection into the very shallow surface layer portion, and CVD.
    Type: Grant
    Filed: January 9, 1995
    Date of Patent: October 17, 1995
    Assignee: Research Development Corporation of Japan
    Inventor: Isao Yamada
  • Patent number: 5198262
    Abstract: Disclosed herein is a method of producing a mirror for electromagnetic radiations of short wavelengths, the method including forming a film on a substrate having a surface roughness smaller than 5 .ANG. by bombardment with a metal, which is at least partly in the form of cluster ions, in a vacuum chamber under the conditions that the accelerating voltage applied to the accelerating electrode is of 3-7 kV, the temperature of the substrate is kept at 0.degree.-60.degree. C., the pressure in the vacuum chamber is kept below 1.times.10.sup.-7 Torr, and the film is formed at a rate of 0.5-5 .ANG./s until it becomes 50-1000 .ANG. thick. A mirror form in accordance with this method has a high reflectivity which has never been achieved by conventional methods.
    Type: Grant
    Filed: March 14, 1991
    Date of Patent: March 30, 1993
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Isao Yamada, Yoichi Hashimoto
  • Patent number: 5042887
    Abstract: Optical reflectors and methods of constructing optical reflectors having high damage thresholds, durability and general applicability are disclosed in which a highly planar substrate, such as a single crystal silicon or other single crystalline material, is disposed within a deposition chamber and oriented to present a particular crystallographic plane. An epitaxial layer of reflective metal, such as aluminum, is grown upon the substrate by ion beam or other method of deposition and then covered with a transparent protective coating.
    Type: Grant
    Filed: October 30, 1989
    Date of Patent: August 27, 1991
    Assignee: Epion Corporation
    Inventor: Isao Yamada
  • Patent number: 4389299
    Abstract: The present application discloses a sputtering device comprising a target electrode having a target and a flat magnet located under the target and constituted by an annular magnetic pole having one polarity and a magnetic pole having the other polarity located inside the annular magnetic pole, a substrate disposed oppositely to the target, a ring electrode for electric field for generating an electric field on the magnet at right angle thereto, an electron beam emitting filament disposed adjacent the target, and an anode electrode for guiding an electron from the filament over the target.According to the present invention, the target material can be effectively deposited to the substrate and efficiently act on the formation of a film.
    Type: Grant
    Filed: June 22, 1981
    Date of Patent: June 21, 1983
    Assignee: Osaka Vacuum Chemical Co., Ltd.
    Inventors: Ryuichi Adachi, Isao Yamada, Kazuhiro Takeshita