Abstract: In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

Abstract: A sulfonate of the formula (I): wherein Q1, Q2, Q3, Q4 and Q5 each independently represents a certain substituent, and A+ represents a counter ion, with the proviso that at least one of Q1, Q2, Q3, Q4 and Q5 is a group of the formula (II) wherein R1 and R2 each independently an alkyl having 1 to 12 carbon atoms or the like; and a chemical amplification type positive resist composition comprising the sulfate of the formula (I) and a resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid.

Abstract: In a semiconductor multi-layer structure in which a first SiGe layer having a first conductivity-type and high impurity concentration, a second SiGe layer having the first conductivity-type and a low impurity concentration and a Si layer having a low impurity concentration are formed one on another in this order on a Si substrate of the first conductivity-type, a channel is formed in a part of the Si layer and a source electrode passes through the second SiGe layer of low impurity concentration to electrically contact the first SiGe layer of high impurity concentration or the substrate.

Abstract: It is to be made possible to eliminate unevenness of the inductances of bonding wires and to reduce the size of semiconductor devices. Over the surface of a semiconductor device in whose MISFET formation area a MISFET comprising a plurality of unit MISFETs connected in parallel, gate electrode pads electrically connected to the gate electrode of the MISFET and drain electrode pads electrically connected to the drain electrode of the same are arranged in a row each. The intervals of the gate electrode pads become gradually shorter from the end areas towards the central area of the electrode array of the gate electrode pads. The intervals of the drain electrode pads also become gradually shorter from the end areas towards the central area of the electrode array of the drain electrode pads.

Abstract: In a semiconductor multi-layer structure in which a first SiGe layer having a first conductivity-type and high impurity concentration, a second SiGe layer having the first conductivity-type and a low impurity concentration and a Si layer having a low impurity concentration are formed one on another in this order on a Si substrate of the first conductivity-type, a channel is formed in a part of the Si layer and a source electrode passes through the second SiGe layer of low impurity concentration to electrically contact the first SiGe layer of high impurity concentration or the substrate.

Abstract: In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

Abstract: A novel sub-structure of a thick film dielectric electroluminescent display and a thick film dielectric electroluminescent display incorporating the same is provided. The sub-structure comprises a barrier layer between a substrate and a thick film dielectric layer. The barrier layer is chemically inert with respect to the substrate and the thick film dielectric layer and the barrier layer inhibits diffusion of at least one chemical species therethrough. This sub-structure results in a higher capacitance for the thick dielectric layer, which provides higher display luminance and a reduced tendency for dielectric breakdown of the thick dielectric layer. The barrier layer permits for lower cost substrates, such as glass, to be used.

Abstract: A semiconductor device for amplification with enhanced performance is provided for use at a base station. The semiconductor device has a semiconductor chip for amplification and a transmission line substrate in the package of an amplifier used at a base station for mobile communication equipment such as a mobile phone. Stubs formed in the empty region of the transmission line substrate are connected to an output of the semiconductor chip for amplification by using bonding wires. The stubs and the bonding wires have been designed to form a resonant circuit resonating at a frequency double the fundamental frequency of an output signal from the semiconductor chip for amplification. This suppresses a doubled-frequency-wave signal of the signal outputted from the semiconductor chip for amplification and achieves an improvement in the transmission efficiency of the amplifier and a reduction in transmission distortion.

Abstract: The present invention provides a chemical amplification type positive resist composition comprising

Abstract: A power MOSFET for a high frequency amplification element having good output power characteristics and high frequency characteristics is described. In the power MOSFET, a shield conductive film electrically connected to via an insulating film is arranged over a drain-offset semiconductor region. A wiring for a drain electrode is so arranged as to extent in parallel to the shield conductive film at one end side of the shield conductive film. On the other hand, a wiring for the gate electrode, a wiring for a source electrode and a gate shunt wiring are arranged in this order to extend in parallel to each other at the other end side of the shield conductive film. The shield conductive film is so formed that the thickness thereof is smaller than that of the wiring for the gate electrode. In this way, the input and output capacitances of the MOSFET can be decreased.

Abstract: A thin film phosphor for an electroluminescent device, the phosphor being selected from the group consisting of thioaluminates, thiogallates and thioindates having at least one cation selected from elements of Groups IIA and IIB of the Periodic Table of Elements. The phosphor being activated by a rare earth metal and containing oxygen as a partial substitute for a portion of the sulphur in the crystal lattice of the thiogallate, thioindate or thioaluminate. The phosphor is a single phase homogeneous compound and provides improved luminance stability. An electroluminescent device comprising the thin film phosphor is also described and methods of making the phosphor of the invention.

Abstract: It is to be made possible to eliminate unevenness of the inductances of bonding wires and to reduce the size of semiconductor devices. Over the surface of a semiconductor device in whose MISFET formation area a MISFET comprising a plurality of unit MISFETs connected in parallel, gate electrode pads electrically connected to the gate electrode of the MISFET and drain electrode pads electrically connected to the drain electrode of the same are arranged in a row each. The intervals of the gate electrode pads become gradually shorter from the end areas towards the central area of the electrode array of the gate electrode pads. The intervals of the drain electrode pads also become gradually shorter from the end areas towards the central area of the electrode array of the drain electrode pads.

Abstract: A method of quantifying the protection ratio of a hydroxyl group of a polymer compound, comprising calculating the protection ratio of a hydroxyl group of a polymer compound using a multiple regression calibration curve obtained by regression-analyzing main components of near infrared absorption spectra of a plurality of standards samples, from near infrared absorption spectra of samples containing a polymer compound composed of the following first structural unit and second structural unit: first structural unit: a structural unit of a structure having a hydroxyl group, second structural unit: a structural unit of a structure obtained by introducing a protective group into a hydroxyl group in the first structural unit. By this method, the protection ratio of a hydroxyl group of the polymer compound contained in a sample can be quantified with high precision in a short period of time without isolating the polymer compound.

Abstract: A structure for standardizing at least one kind of part of a roller assembly for a construction vehicle so that the part can be used for a same size of construction vehicles having different structural specifications of a plurality of construction vehicle makers. The at least one kind of part includes at least one of a shell, a shaft, a floating seal, a bushing and a collar. Structural specifications including the configuration and dimension, the kind of steel or material, and the heat treatment specification or the mechanical property for the at least one kind of part are unified as much as possible over the same size of the construction vehicles of a plurality of construction vehicle makers.

Abstract: In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

Abstract: A chemical amplification type positive resist composition showing a high transmittance at a wavelength of 157 nm and manifesting excellent balance of abilities is provided which comprises a resin having polymerization units of the general formulae (I) and (II) and insoluble or poorly soluble itself in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid; and an acid generating agent: 1

Abstract: In a semiconductor multi-layer structure in which a first SiGe layer having a first conductivity-type and high impurity concentration, a second SiGe layer having the first conductivity-type and a low impurity concentration and a Si layer having a low impurity concentration are formed one on another in this order on a Si substrate of the first conductivity-type, a channel is formed in a part of the Si layer and a source electrode passes through the second SiGe layer of low impurity concentration to electrically contact the first SiGe layer of high impurity concentration or the substrate.

Abstract: A radio frequency power amplifier module for a dual-band type mobile communication apparatus that can transmit and receive a first frequency f1 and second frequency f2 (f2=2×f1). It includes a drive stage amplifier having the gain peaks at f1 and f2 with a matching circuit and a radio frequency power output circuit including a radio frequency power output transistor. The output circuit has a transmission line connected to the drain end of the output transistor, a parallel resonance circuit connected in series to the transmission line to resonate at harmonics of a frequency twice the frequency f2, a series resonance circuit provided between one end of the resonance circuit and the ground to resonate at harmonics of a frequency twice the frequency f2 and an output matching circuit provided in series to the other end of the parallel resonance circuit for matching with f1 and f2.

Abstract: In a television meeting system, image data and voice data are transmitted and received among a plurality of terminal units. The terminal unit transmits and receives a video signal synthesized by combining desired background data selected by a user with taken-out image and voice. The terminal unit includes a recorder in which desired background data selected by the user is preliminarily recorded.

Abstract: In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).