Abstract: A snow removing machine comprising a forward and aft drivechangeover switch, a height control operation lever for adjusting the height of a snow removing plate, both mounted to one of grip portions, and a speed control operation lever mounted to the other one of the grip portions. Gripping the grip portions with his respective hands, an operator can manipulate the forward and aft drive changeover switch and the height control operation lever by one of his hands and the speed control operation lever by the other one of his hands, thereby making the operator avoid single hand driving of the machine.

Abstract: An endless track includes an iron link belt, a continuous pad, and a connecting device. The iron link belt includes a link unit assembly constructed of a plurality of link units connected to each other. Each link unit includes a pair of links. The iron link belt may include a plate welded to the pair of links and extending perpendicularly to a direction in which the link unit assembly extends. The continuous pad includes the same number of core metal plates as that of the link units, and a single rubber belt covering and being vulcanization-adhered to a ground opposing surface of each of the core metal plates. The rubber belt extends continuously over all of the core metal plates. The rubber belt may include a small thickness portion positioned between two adjacent core metal plates. The connecting device connects the iron link belt and the continuous pad.

Abstract: A power transmission belt comprising: a body comprising rubber comprising an ethylene-&agr;-olefin elastomer and N,N′-m-phenylene dimaleimide added in an amount of 0.2-10 parts by weight per 100 parts by weight of ethylene-&agr;-olefin elastomer.

Abstract: To enable easy replacement of a soiled fingerprint reading window. To reduce the number of light sources and achieve miniaturization.

Abstract: In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, lid (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).

Abstract: A walking-type snow removal machine comprises a snow removing member provided at a front part of a body frame for pushing snow forward, and crawler belts provided on right and left sides of the body frame. The body frame carries thereon an electric motor and a battery. The electric motor drives right and left drive wheels to drive the crawler belts. The electric motor generates little noise as compared with an engine, and contributes to downsizing of the snow removal machine. The battery supplies electrical power to the electric motor.

Abstract: A semiconductor apparatus such as a power MOSFET, an IGBT, or the like is provided having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. To prevent erroneous operation, the control circuit controls so that when the voltage of a gate terminal is positive relative to that of a source terminal, a first switch circuit is turned on, when the voltage of the gate terminal is negative relative to that of the source terminal, a second switch circuit is turned on, and when the gate terminal and the source terminal have an almost same potential and a drain terminal has a high potential, the second switch circuit is turned on, thereby reducing leakage current from the drain terminal to the gate terminal.

Abstract: There is disclosed a semiconductor apparatus such as a power MOSFET, an IGBT, or the like having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. In order to prevent erroneous operation of a power MOSFET 30 and a protection circuit 21 caused by a parasitic npn transistor 29 of an MOSFET 32, a control circuit 20 controls so that when the voltage of a gate terminal 2 is positive relative to that of a source terminal 3, a switch circuit SW3 is turned on, when the voltage of the gate terminal 2 is negative relative to that of the source terminal 3, a switch circuit SW2 is turned on, and when the gate terminal 2 and the source terminal 3 have an almost same potential and a drain terminal 1 has a high potential, the switch circuit SW2 is turned on.

Abstract: A method for heat-treating a hollow cylindrical workpiece includes quench-hardening including a first step and a second step. In the first step, during continuously conveying the workpiece in a horizontal direction without a space between adjacent workpieces, an entirety of the workpiece is subjected to induction-heating conducted from an outside surface of the workpiece only, and a temperature of the workpiece is made uniform before the workpiece reaches a cooling portion spaced from a heating portion. Then, cooling the workpiece is initiated before the temperature of the workpiece falls to Ar3 temperature and an entire cross-section of a wall of the workpiece is quench-hardened. In the second step, during continuously conveying the workpiece in the horizontal direction, induction-heating is conducted only to an outside portion of the workpiece, the induction-heating being conducted from the outside surface only.

Abstract: A method of improving fuel efficiency of an internal combustion engine such as an automobile and controlling exhaust emission, comprising the steps of accommodating a chemical element conversion substance including an Inoue ore produced in the vicinity of Nango of Seta River at the southernmost part of the Lake Biwa and natural radioactive ores such as neutrons and gamma-rays in a fuel strainer of a fluid passageway (1), allowing a fuel such as gasoline or light oil to flow through this passageway (1) and irradiating the fuel with radioactive rays to improve the fuel.

Abstract: There is disclosed a semiconductor apparatus such as a power MOSFET, an IGBT, or the like having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device.In order to prevent erroneous operation of a power MOSFET 30 and a protection circuit 21 caused by a parasitic npn transistor 29 of an MOSFET 32, a control circuit 20 controls so that when the voltage of a gate terminal 2 is positive relative to that of a source terminal 3, a switch circuit SW3 is turned on, when the voltage of the gate terminal 2 is negative relative to that of the source terminal 3, a switch circuit SW2 is turned on, and when the gate terminal 2 and the source terminal 3 have an almost same potential and a drain terminal 1 has a high potential, the switch circuit SW2 is turned on.

Abstract: A 3-[(E)-1-propenyl]cephem compound represented by formula (I): ##STR1## wherein R represents hydrogen, a protective group for an amino group, or the group shown by formula (II): ##STR2## in which R.sup.3 is a protective group for an amino group, R.sup.4 is a protective group for a hydroxyl group, and W is --CH.dbd. or --N.dbd.; R.sup.2 represents a protective group for a carboxyl group; and X represents hydrogen or chlorine. The compound is useful as an intermediate for producing cephem antibiotics and is prepared by isomerizing the corresponding 3-[(Z)-1-propenyl]cephem compound in an inert organic solvent in the presence of an aromatic thiol. The compound of formula (I) wherein X is chlorine can be converted into a 3-[(E)-3-ammonio-1-propenyl]cephem derivative through the reaction with a tertiary amine.

Abstract: A precursor is made from a plurality of materials having different vapor pressures. The precursor and a source material are placed in a closed heat treatment furnace. The source material is materials which are the same as some of the materials contained in the precursor and having particular vapor pressures. The precursor and source material is thermally treated in the furnace while the source material is being supplied, so the particular materials in the precursor have their evaporation suppressed, thereby forming compounds. The compounds may be oxide superconductors, oxide dielectric, and so on.

Abstract: In a semiconductor circuit device having a substrate, a first region of a first conductivity type formed in the substrate, a second region of a second conductivity type contacted to the first region and a MISFET formed in the second region, there is a problem of that a parasitic npn bipolar transistor constituted by the first region, the second region and a source or drain of the MISFET activates. In this invention, switching circuitry is provided to make the second region floating or to connect the second region with the source or drain of the MISFET when a negative first input voltage is input to a source or a drain of the first MISFET. By virtue of the switching circuitry, no base current of the parasitic bipolar transistor occurs, thereby preventing operation of the parasitic transistor. In particular, when the switching circuitry operates to cause the second region to float, the base of the parasitic bipolar transistor will float, and the bipolar transistor cannot operate.

Abstract: An insulated gate semiconductor device, which improves high frequency characteristics by reducing the resistance of a path from a gate bonding portion to each gate and eliminating an unbalance in resistances of respective gates, and which obtain a higher output by eliminating a limitation in current capacity due to the thickness of a first metal layer. In this insulated gate semiconductor device, a first aluminum layer is connected in parallel onto a gate electrode made of polycrystalline silicon. The adjacent gates, each having such a double layer structure, extend outside channel regions and are connected to each other. A lead-out electrode of a second aluminum layer is connected to the center of the connection portion of the adjacent gates through an opening portion. A gate bonding portion is provided at the center of the lead-out electrode. Each of source and drain electrodes is also of a double layer structure having the first aluminum layer and the second aluminum layer.

Abstract: A 3-?(E)-1-propenyl!cephem compound represented by formula (I): ##STR1## wherein R represents hydrogen, a protective group for an amino group, or the group shown by formula (II): ##STR2## in which R.sup.3 is a protective group for an amino group, R.sup.4 is a protective group for a hydroxyl group, and W is --CH.dbd. or --N.dbd.; R.sup.2 represents a protective group for a carboxyl group; and X represents hydrogen or chlorine. The compound is useful as an intermediate for producing cephem antibiotics and is prepared by isomerizing the corresponding 3-?(Z)-1-propenyl!cephem compound in an inert organic solvent in the presence of an aromatic thiol. The compound of formula (I) wherein X is chlorine can be converted into a 3-?(E)-3-ammonio-1-propenyl!cephem derivative through the reaction with a tertiary amine.

Abstract: An improvement in conditions that protective functions of an insulated gate semiconductor device with a protection circuit incorporated therein are performed, an improvement in the cutoff of heating, the prevention of malfunctions and an improvement in ease of usage can be achieved.The insulated gate semiconductor device of the present invention comprises a power insulated gate semiconductor element (M9), at least one MOSFET (M1 through M7) for a protection circuit, for controlling the power insulated gate semiconductor element, a constant-voltage circuit using forward voltages developed across diodes (D2a through D2f) for the constant-voltage circuit, and voltage restricting diodes (D1 and D0a through D0d) for controlling the upper limit of a power supply voltage of the constant-voltage circuit. Power to be supplied to the voltage restricting diodes is supplied from an external gate terminal of the power insulated gate semiconductor element.