Patents by Inventor Ishtak Karim
Ishtak Karim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11864372Abstract: A method for reducing bending of word lines in a memory cell includes a) providing a substrate including a plurality of word lines arranged adjacent to one another and above a plurality of transistors; b) depositing a layer of film on the plurality of word lines using a deposition process; c) after depositing the layer of film, measuring word line bending; d) comparing the word line bending to a predetermined range; e) based on the word line bending, adjusting at least one of nucleation delay and grain size of the deposition process; and f) repeating b) to e) one or more times using one or more substrates, respectively, until the word line bending is within the predetermined range.Type: GrantFiled: November 25, 2019Date of Patent: January 2, 2024Assignee: Lam Research CorporationInventors: Gorun Butail, Shruti Thombare, Ishtak Karim, Patrick Van Cleemput
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Patent number: 11651963Abstract: A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition. At least one additional process is provided, wherein the at least one additional process completes formation of features over the wafer, wherein the features are more uniform than features that would be formed without pretuning.Type: GrantFiled: March 17, 2021Date of Patent: May 16, 2023Assignee: Lam Research CorporationInventors: Ishtak Karim, Pulkit Agarwal, Joseph R. Abel, Purushottam Kumar, Adrien Lavoie
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Patent number: 11443975Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.Type: GrantFiled: March 31, 2020Date of Patent: September 13, 2022Assignee: LAM RESEARCH CORPORATIONInventors: Patrick Breiling, Ramesh Chandrasekharan, Karl Leeser, Paul Konkola, Adrien LaVoie, Chloe Baldasseroni, Shankar Swaminathan, Ishtak Karim, Yukinori Sakiyama, Edmund Minshall, Sung Je Kim, Andrew Duvall, Frank Pasquale
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Publication number: 20220154336Abstract: Methods and apparatuses for depositing approximately equal thicknesses of a material on at least two substrates concurrently processed in separate stations of a multi-station deposition apparatus are provided.Type: ApplicationFiled: January 28, 2022Publication date: May 19, 2022Inventors: Ishtak Karim, Kiyong Cho, Adrien LaVoie, Jaswinder Guliani, Purushottam Kumar, Jun Qian
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Publication number: 20220033967Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.Type: ApplicationFiled: October 20, 2021Publication date: February 3, 2022Inventors: Purushottam Kumar, Adrien LaVoie, Jun Qian, Hu Kang, Ishtak Karim, Fung Suong Ou
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Publication number: 20220028864Abstract: A method for reducing bending of word lines in a memory cell includes a) providing a substrate including a plurality of word lines arranged adjacent to one another and above a plurality of transistors; b) depositing a layer of film on the plurality of word lines using a deposition process; c) after depositing the layer of film, measuring word line bending; d) comparing the word line bending to a predetermined range; e) based on the word line bending, adjusting at least one of nucleation delay and grain size of the deposition process; and f) repeating b) to e) one or more times using one or more substrates, respectively, until the word line bending is within the predetermined range.Type: ApplicationFiled: November 25, 2019Publication date: January 27, 2022Inventors: Gorun BUTAIL, Shruti THOMBARE, Ishtak KARIM, Patrick VAN CLEEMPUT
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Patent number: 11180850Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.Type: GrantFiled: September 20, 2018Date of Patent: November 23, 2021Assignee: Lam Research CorporationInventors: Purushottam Kumar, Adrien LaVoie, Jun Qian, Hu Kang, Ishtak Karim, Fung Suong Ou
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Publication number: 20210202250Abstract: A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition. At least one additional process is provided, wherein the at least one additional process completes formation of features over the wafer, wherein the features are more uniform than features that would be formed without pretuning.Type: ApplicationFiled: March 17, 2021Publication date: July 1, 2021Inventors: Ishtak KARIM, Pulkit AGARWAL, Joseph R. ABEL, Purushottam KUMAR, Adrien LAVOIE
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Patent number: 10978302Abstract: A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition of a silicon oxide based material is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition, which is complementary to the non-uniform removal of some of the carbon based deposition by the pretuning.Type: GrantFiled: May 8, 2018Date of Patent: April 13, 2021Assignee: Lam Research CorporationInventors: Ishtak Karim, Pulkit Agarwal, Joseph Abel, Purushottam Kumar, Adrien Lavoie
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Publication number: 20210013080Abstract: Apparatuses and systems for pedestals are provided. An example pedestal may have a body with an upper annular seal surface that is planar, perpendicular to a vertical center axis of the body, and has a radial thickness, a lower recess surface offset from the upper annular seal surface, and a plurality of micro-contact areas (MCAs) protruding from the lower recess surface, each MCA having a top surface offset from the lower recess surface by a second distance less, and one or more electrodes within the body. The upper annular seal surface may be configured to support an outer edge of a semiconductor substrate when the semiconductor substrate is being supported by the pedestal, and the upper annular seal surface and the tops of the MCAs may be configured to support the semiconductor substrate when the semiconductor substrate is being supported by the pedestal.Type: ApplicationFiled: April 4, 2019Publication date: January 14, 2021Inventors: Patrick G. Breiling, Michael Philip Roberts, Chloe Baldasseroni, Ishtak Karim, Adrien LaVoie, Ramesh Chandrasekharan
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Publication number: 20200227304Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.Type: ApplicationFiled: March 31, 2020Publication date: July 16, 2020Inventors: Patrick Breiling, Ramesh Chandrasekharan, Karl Leeser, Paul Konkola, Adrien LaVoie, Chloe Baldasseroni, Shankar Swaminathan, Ishtak Karim, Yukinori Sakiyama, Edmund Minshall, Sung Je Kim, Andrew Duvall, Frank Pasquale
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Patent number: 10692717Abstract: A method for defining thin film layers on a surface of a substrate includes exposing the surface of the substrate to a first precursor via a first plasma to allow the first precursor to be absorbed by the surface of the substrate. A second precursor that is different from the first precursor is applied to the surface of the substrate via a second plasma. The second precursor is a Carbon dioxide precursor that releases sufficient oxygen radicals to react with the first precursor to form an oxide film layer on the surface of the substrate.Type: GrantFiled: July 1, 2019Date of Patent: June 23, 2020Assignee: Lam Research CorporationInventors: Douglas Walter Agnew, Ishtak Karim
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Patent number: 10679848Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.Type: GrantFiled: July 12, 2018Date of Patent: June 9, 2020Assignee: Lam Research CorporationInventors: Purushottam Kumar, Adrien LaVoie, Ishtak Karim, Jun Qian, Frank L. Pasquale, Bart J. van Schravendijk
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Patent number: 10655224Abstract: A semiconductor system includes a chamber, a pedestal disposed in the chamber, and a focus ring that surrounds the pedestal. The pedestal has a center region for supporting a central region of a substrate, e.g., a wafer. The focus ring is configured to surround the center region of the pedestal. The focus ring has an annular support region that extends between an inner portion of the focus ring and an outer portion of the focus ring. The annular support region, which is disposed at an angle relative to a horizontal line, provides a knife-edge contact for the substrate when present over the center region of the pedestal and the annular support region of the focus ring. The knife-edge contact between the edge of the substrate and the annular support region of the focus ring disables chemical access to the substrate backside and thereby reduces unwanted backside deposition.Type: GrantFiled: December 20, 2016Date of Patent: May 19, 2020Assignee: Lam Research CorporationInventors: Pulkit Agarwal, Ishtak Karim, Purushottam Kumar, Adrien LaVoie, Sung Je Kim, Patrick Breiling
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Patent number: 10622243Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass through the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.Type: GrantFiled: February 13, 2017Date of Patent: April 14, 2020Inventors: Patrick Breiling, Ramesh Chandrasekharan, Karl Leeser, Paul Konkola, Adrien LaVoie, Chloe Baldasseroni, Shankar Swaminathan, Ishtak Karim, Yukinori Sakiyama, Edmund Minshall, Sung Je Kim, Andrew Duvall, Frank Pasquale
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Publication number: 20200027718Abstract: A method for defining thin film layers on a surface of a substrate includes exposing the surface of the substrate to a first precursor via a first plasma to allow the first precursor to be absorbed by the surface of the substrate. A second precursor that is different from the first precursor is applied to the surface of the substrate via a second plasma. The second precursor is a Carbon dioxide precursor that releases sufficient oxygen radicals to react with the first precursor to form an oxide film layer on the surface of the substrate.Type: ApplicationFiled: July 1, 2019Publication date: January 23, 2020Inventors: Douglas Walter Agnew, Ishtak Karim
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Patent number: 10340136Abstract: A method for defining thin film layers on a surface of a substrate includes exposing the surface of the substrate to a first precursor via a first plasma to allow the first precursor to be absorbed by the surface of the substrate. A second precursor that is different from the first precursor is applied to the surface of the substrate via a second plasma. The second precursor is a Carbon dioxide precursor that releases sufficient oxygen radicals to react with the first precursor to form an oxide film layer on the surface of the substrate.Type: GrantFiled: July 19, 2018Date of Patent: July 2, 2019Assignee: Lam Research CorporationInventors: Douglas Walter Agnew, Ishtak Karim
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Publication number: 20190164757Abstract: A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition of a silicon oxide based material is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition, which is complementary to the non-uniform removal of some of the carbon based deposition by the pretuning.Type: ApplicationFiled: May 8, 2018Publication date: May 30, 2019Inventors: Ishtak KARIM, Pulkit AGARWAL, Joseph ABEL, Purushottam KUMAR, Adrien LAVOIE
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Patent number: 10202691Abstract: Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).Type: GrantFiled: June 28, 2017Date of Patent: February 12, 2019Assignee: Lam Research CorporationInventors: Ishtak Karim, Adrien LaVoie
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Publication number: 20190024233Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.Type: ApplicationFiled: September 20, 2018Publication date: January 24, 2019Inventors: Purushottam Kumar, Adrien LaVoie, Jun Qian, Hu Kang, Ishtak Karim, Fung Suong Ou