Patents by Inventor Ishtak Karim
Ishtak Karim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190024233Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.Type: ApplicationFiled: September 20, 2018Publication date: January 24, 2019Inventors: Purushottam Kumar, Adrien LaVoie, Jun Qian, Hu Kang, Ishtak Karim, Fung Suong Ou
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Patent number: 10128160Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.Type: GrantFiled: November 20, 2017Date of Patent: November 13, 2018Assignee: Lam Research CorporationInventors: Yukinori Sakiyama, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Ramesh Chandrasekharan, Edward Augustyniak, Douglas Keil
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Publication number: 20180323057Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.Type: ApplicationFiled: July 12, 2018Publication date: November 8, 2018Inventors: Purushottam Kumar, Adrien LaVoie, Ishtak Karim, Jun Qian, Frank L. Pasquale, Bart J. van Schravendijk
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Patent number: 10094018Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.Type: GrantFiled: October 30, 2015Date of Patent: October 9, 2018Assignee: Lam Research CorporationInventors: Purushottam Kumar, Adrien LaVoie, Jun Qian, Hu Kang, Ishtak Karim, Fung Suong Ou
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Patent number: 10074543Abstract: Methods and apparatuses for depositing low density spacers using atomic layer deposition for negative patterning schemes are provided herein. Methods involve one or more of: (1) exposing a substrate to a plasma for a duration less than about 300 ms in each cycle of alternating pulses of a deposition precursor and oxidizing plasma; (2) exposing the substrate to the plasma at a radio frequency power density of less than about 0.2 W/cm2; and (3) exposing the substrate to the plasma produced from a process gas having an argon to oxidant ratio of at least about 1:12.Type: GrantFiled: August 31, 2016Date of Patent: September 11, 2018Assignee: Lam Research CorporationInventors: Arpan Mahorowala, Ishtak Karim, Purushottam Kumar, Shankar Swaminathan, Adrien LaVoie
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Patent number: 10062563Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.Type: GrantFiled: July 1, 2016Date of Patent: August 28, 2018Assignee: Lam Research CorporationInventors: Purushottam Kumar, Adrien LaVoie, Ishtak Karim, Jun Qian, Frank L. Pasquale, Bart J. van Schravendijk
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Patent number: 10037884Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.Type: GrantFiled: August 31, 2016Date of Patent: July 31, 2018Assignee: Lam Research CorporationInventors: Fung Suong Ou, Purushottam Kumar, Adrien LaVoie, Ishtak Karim, Jun Qian
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Publication number: 20180171473Abstract: A semiconductor system includes a chamber, a pedestal disposed in the chamber, and a focus ring that surrounds the pedestal. The pedestal has a center region for supporting a central region of a substrate, e.g., a wafer. The focus ring is configured to surround the center region of the pedestal. The focus ring has an annular support region that extends between an inner portion of the focus ring and an outer portion of the focus ring. The annular support region, which is disposed at an angle relative to a horizontal line, provides a knife-edge contact for the substrate when present over the center region of the pedestal and the annular support region of the focus ring. The knife-edge contact between the edge of the substrate and the annular support region of the focus ring disables chemical access to the substrate backside and thereby reduces unwanted backside deposition.Type: ApplicationFiled: December 20, 2016Publication date: June 21, 2018Inventors: Pulkit Agarwal, Ishtak Karim, Purushottam Kumar, Adrien LaVoie, Sung Je Kim, Patrick Breiling
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Patent number: 9997422Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency signals of a first signal frequency are supplied to the plasma generation region to generate a plasma within the plasma generation region. Formation of a plasma instability is detected within the plasma based on supply of the radiofrequency signals of the first signal frequency. After detecting formation of the plasma instability, radiofrequency signals of a second signal frequency are supplied to the plasma generation region in lieu of the radiofrequency signals of the first signal frequency to generate the plasma. The second signal frequency is greater than the first signal frequency and is set to cause a reduction in ion energy within the plasma and a corresponding reduction in secondary electron emission from the wafer caused by ion interaction with the wafer.Type: GrantFiled: April 4, 2016Date of Patent: June 12, 2018Assignee: Lam Research CorporationInventors: Ishtak Karim, Yukinori Sakiyama, Yaswanth Rangineni, Edward Augustyniak, Douglas Keil, Ramesh Chandrasekharan, Adrien LaVoie, Karl Leeser
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Patent number: 9941113Abstract: Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.Type: GrantFiled: May 1, 2017Date of Patent: April 10, 2018Assignee: Lam Research CorporationInventors: Douglas Keil, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Yukinori Sakiyama, Edward Augustyniak, Karl Leeser, Chunhai Ji
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Publication number: 20180076100Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.Type: ApplicationFiled: November 20, 2017Publication date: March 15, 2018Inventors: Yukinori Sakiyama, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Ramesh Chandrasekharan, Edward Augustyniak, Douglas Keil
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Publication number: 20180061650Abstract: Methods and apparatuses for depositing low density spacers using atomic layer deposition for negative patterning schemes are provided herein. Methods involve one or more of: (1) exposing a substrate to a plasma for a duration less than about 300 ms in each cycle of alternating pulses of a deposition precursor and oxidizing plasma; (2) exposing the substrate to the plasma at a radio frequency power density of less than about 0.2 W/cm2; and (3) exposing the substrate to the plasma produced from a process gas having an argon to oxidant ratio of at least about 1:12.Type: ApplicationFiled: August 31, 2016Publication date: March 1, 2018Inventors: Arpan Mahorowala, Ishtak Karim, Purushottam Kumar, Shankar Swaminathan, Adrien LaVoie
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Publication number: 20180061628Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.Type: ApplicationFiled: August 31, 2016Publication date: March 1, 2018Inventors: Fung Suong Ou, Purushottam Kumar, Adrien LaVoie, Ishtak Karim, Jun Qian
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Patent number: 9870917Abstract: A process tuning kit for use in a chemical deposition apparatus wherein the process tuning kit includes a carrier ring, horseshoes and shims. The horseshoes have the same dimensions and the shims are provided in sets with different thicknesses to control the height of the horseshoes with respect to an upper surface of a pedestal assembly on which the horseshoes and shims are mounted. A semiconductor substrate is transported into a vacuum chamber of the chemical deposition apparatus by the carrier ring which is placed on the horseshoes such that minimum contact area supports lift the substrate from the carrier ring and support the substrate at a predetermined offset with respect to an upper surface of the pedestal assembly. During processing of the substrate, backside deposition can be reduced by using shims of desired thickness to control the predetermined offset.Type: GrantFiled: February 24, 2016Date of Patent: January 16, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Hu Kang, Ishtak Karim, Purushottam Kumar, Jun Qian, Ramesh Chandrasekharan, Adrien LaVoie
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Publication number: 20180005814Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.Type: ApplicationFiled: July 1, 2016Publication date: January 4, 2018Inventors: Purushottam Kumar, Adrien LaVoie, Ishtak Karim, Jun Qian, Frank L. Pasquale, Bart J. van Schravendijk
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Publication number: 20170362705Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.Type: ApplicationFiled: October 30, 2015Publication date: December 21, 2017Inventors: Purushottam Kumar, Adrien LaVoie, Jun Qian, Hu Kang, Ishtak Karim, Fung Suong Ou
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Publication number: 20170362713Abstract: Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).Type: ApplicationFiled: June 28, 2017Publication date: December 21, 2017Inventors: Ishtak Karim, Adrien LaVoie
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Patent number: 9824941Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.Type: GrantFiled: March 18, 2016Date of Patent: November 21, 2017Assignee: Lam Research CorporationInventors: Yukinori Sakiyama, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Ramesh Chandrasekharan, Edward Augustyniak, Douglas Keil
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Publication number: 20170330744Abstract: Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.Type: ApplicationFiled: May 1, 2017Publication date: November 16, 2017Inventors: Douglas Keil, Ishtak Karim, Yaswanth Rangineni, Adrien LaVoie, Yukinori Sakiyama, Edward Augustyniak, Karl Leeser, Chunhai Ji
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Publication number: 20170314129Abstract: Methods and apparatuses for depositing approximately equal thicknesses of a material on at least two substrates concurrently processed in separate stations of a multi-station deposition apparatus are provided.Type: ApplicationFiled: April 29, 2016Publication date: November 2, 2017Inventors: Ishtak Karim, Kiyong Cho, Adrien LaVoie, Jaswinder Guliani, Purushottam Kumar, Jun Qian