Patents by Inventor Ivan-Christophe Robin

Ivan-Christophe Robin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220140182
    Abstract: An optoelectronic device including an array of axial diodes, each diode forming a resonant cavity having a standing electromagnetic wave forming therein, each light-emitting diode including an active area located substantially at the level of an extremum of the electromagnetic wave, the array forming a photonic crystal configured to maximize the intensity of the electromagnetic radiation supplied by the diode array.
    Type: Application
    Filed: June 19, 2019
    Publication date: May 5, 2022
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Ivan-Christophe Robin
  • Patent number: 11302677
    Abstract: A method of manufacturing an LED display device, including the successive steps of: a) transferring, onto a planar surface of a support plate made of a transparent material having its other surface structured and defining a plurality of microlenses, a plurality of semiconductor chips, each including at least one LED; and b) forming a network of conductive interconnection tracks contacting the chips by their surface opposite to the support plate.
    Type: Grant
    Filed: September 3, 2018
    Date of Patent: April 12, 2022
    Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Ivan-Christophe Robin, Stéphane Caplet, Umberto Rossini
  • Publication number: 20220059743
    Abstract: An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.
    Type: Application
    Filed: December 19, 2019
    Publication date: February 24, 2022
    Applicant: Aledia
    Inventors: Frédéric Mayer, Frédéric Mercier, Ivan-Christophe Robin, Xavier Hugon
  • Publication number: 20220045040
    Abstract: An optoelectronic multiscopic image display and/or capture device, including a support, an array of optoelectronic circuits resting on the support, and lenses covering the optoelectronic circuits. Each optoelectronic circuit includes a number N of photosensors capable of capturing a pixel or pixels of an image of a scene according to different viewpoints and/or number N of display circuits capable of displaying a pixel or pixels of an image of a scene according to the different viewpoints, N being a natural number greater than or equal to 3.
    Type: Application
    Filed: December 17, 2019
    Publication date: February 10, 2022
    Applicant: Parc d'Entreprises Sud Galaxie
    Inventors: Ivan-Christophe Robin, Frédéric Mercier, Matthieu Charbonnier, Olivier Jeannin
  • Publication number: 20220037393
    Abstract: An optoelectronic device includes at least one primary sub-pixel having at least one first primary stack with at least two first main layers of indium nitride and gallium nitride, the layers separated in pairs at least by a first intermediate layer of gallium nitride. The device includes a first primary active layer with at least one first quantum well, and a second primary stack having at least two second main layers of indium nitride and gallium nitride the layers separated in pairs by a second intermediate layer of gallium nitride; at least one second primary active layer with one second quantum well; and a first primary junction layer formed on and in contact with the second primary active layer, the first primary junction layer doped according to a second type of doping chosen from an N-type and a P-type dopings, the second type of doping different from the first type.
    Type: Application
    Filed: December 3, 2019
    Publication date: February 3, 2022
    Inventor: Ivan-Christophe ROBIN
  • Publication number: 20210408321
    Abstract: A positioning mask includes a body delimiting conduits dimensioned to each accommodate a single functional electronic object and opening through a first opening on a cooperation face, and through a second opening on a reception face. A system for manufacturing an optoelectronic device includes functional electronic objects distributed and fixed on a reception face of a screen substrate. The system further includes a positioning mask of the aforementioned type as well as a supplying unit for freely depositing an assembly of functional electronic objects on the reception face, and a placing unit for positioning the cooperation face facing the reception face, the conduits being arranged at predetermined locations on the reception face where the functional electronic objects are positioned. A a method for manufacturing an optoelectronic device is also related.
    Type: Application
    Filed: June 25, 2021
    Publication date: December 30, 2021
    Inventors: Eric MOTTIN, Nohora CAICEDO, Ivan-Christophe ROBIN
  • Publication number: 20210399166
    Abstract: A light-emitting diode 100 includes a first region 1, for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20, and including a third region 3, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2, through the first and second layers 10, 20. A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.
    Type: Application
    Filed: November 20, 2019
    Publication date: December 23, 2021
    Inventors: Ivan-Christophe ROBIN, Xavier HUGON, Philippe GILET, Tiphaine DUPONT
  • Publication number: 20210384175
    Abstract: An optoelectronic device including a support including a face; light-emitting diodes lying on the face and comprising including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 ?m and 30 ?m, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.
    Type: Application
    Filed: October 18, 2019
    Publication date: December 9, 2021
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Ivan-Christophe Robin
  • Publication number: 20210375834
    Abstract: A method for manufacturing an electronic device including the following steps: a) forming a wafer of electronic chips; b) fixing the wafer of electronic chips to a first support made of a stretchable material; c) removing and/or etching the wafer; and d) stretching the first support so as to move the chips away from one another.
    Type: Application
    Filed: October 8, 2019
    Publication date: December 2, 2021
    Applicant: Aledia
    Inventors: Ivan-Christophe Robin, Zine Bouhamri, Philippe Gilet
  • Publication number: 20210366979
    Abstract: An optoelectronic device having a substrate and a plurality of sets of light-emitting diodes where each set includes a plurality of light-emitting diodes, a first lower electrode, a second upper electrode, an electronic component of an electronic circuit formed in a first portion of the substrate, on the side of the face of the substrate that does not bear the light-emitting diodes, and a first conductive means formed through the first portion and electrically connecting a first terminal of the electronic component to one amongst the first and second electrodes. The first conductive means of a given set is electrically-insulated from the first conductive means of the other sets.
    Type: Application
    Filed: February 1, 2019
    Publication date: November 25, 2021
    Inventors: Ivan-Christophe ROBIN, Matthieu CHARBONNIER, Xavier HUGON, Erwan DORNEL
  • Patent number: 11164506
    Abstract: A method of controlling an optoelectronic device including display pixels arranged in rows and in columns. The optoelectronic device further includes first electrodes, each connected to the display pixels of at least one row, second electrodes, each connected to the display pixels of at least one column, and a circuit for controlling the first and second electrodes. The method includes, in a first phase, the activation of the display pixels connected to one of the first electrodes and to one of the second electrodes by the following steps, simultaneously carried out: taking one of the first electrodes to a first potential, the other first electrodes being maintained at a second potential smaller than the first potential; and taking one of the second electrodes to a third potential smaller than the second potential, the other second electrodes being maintained at a fourth potential greater than the third potential and smaller than the second potential.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: November 2, 2021
    Assignee: Aledia
    Inventors: Xavier Hugon, Philippe Gilet, Ivan-Christophe Robin, Zine Bouhamri, Frédéric Mercier, Matthieu Charbonnier
  • Publication number: 20210273132
    Abstract: An optoelectronic device including an array of axial diodes, each diode forming a resonant cavity having a standing electromagnetic wave forming therein, each light-emitting diode including an active area located substantially at the level of an extremum of the electromagnetic wave, the array forming a photonic crystal configured to maximize the intensity of the electromagnetic radiation supplied by the diode array.
    Type: Application
    Filed: June 19, 2019
    Publication date: September 2, 2021
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Ivan-Christophe Robin
  • Publication number: 20210257523
    Abstract: An emitting device comprising a first light emitter adapted to emit a first radiation, and a second light emitter adapted to emit a second radiation different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter, the second light emitter comprising a second semiconducting structure and a second radiation converter, each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation, each radiation converter comprising a set of particles able to convert the third radiation into the first or second radiation, the particles of the first radiation converter being attached to a surface by a bulk of photosensitive resin and the particles of the second radiation converter being attached to a surface by grafting.
    Type: Application
    Filed: June 27, 2019
    Publication date: August 19, 2021
    Inventors: Ying-Lan CHANG, Sylvia SCARINGELLA, Ivan-Christophe ROBIN, Abdelhay ABOULAICH
  • Patent number: 11075192
    Abstract: A diode including: first and second doped semi-conductor portions forming a p-n junction, a first part of the first portion being arranged between a second part of the first portion and the second portion; dielectric portions covering side walls of the second portion and the first part of the first portion; a first electrode arranged against outer side walls of the dielectric portions and against side walls of the second part of the first portion, electrically connected to the first portion only by contact with said side walls, and passing through the entire thickness of the first portion; a second optically reflecting electrode electrically connected to the second portion such that the second portion is arranged between the second electrode and the first portion.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: July 27, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert Bono, Jonathan Garcia, Ivan-Christophe Robin
  • Publication number: 20210193639
    Abstract: An optoelectronic device including a support, at least a first conductive layer covering the support, display pixels including first and second opposite surfaces, bonded to the first conductive layer, each pixel including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first conductive layer, and an optoelectronic circuit bonded to the third surface and including at least two light-emitting diodes, at least one of the electrodes of each light-emitting diode being connected to the electronic circuit by the third surface, the optoelectronic circuit further comprising photoluminescent blocks covering the light-emitting diodes and conductive or semiconductor walls surrounding the photoluminescent blocks, and at least one second conductive layer electrically coupled to at least one of the pixels.
    Type: Application
    Filed: June 24, 2019
    Publication date: June 24, 2021
    Applicant: Aledia
    Inventors: Ivan-Christophe Robin, Erwan Dornel, Frederic Mercier
  • Publication number: 20210142716
    Abstract: A display device includes a support and first and second conductive electrical power supply elements, the first conductive element being arranged on the support. The display device also includes LED modules, each including at least one LED and two electrical power supply pads that are arranged on two opposite faces, respectively, of the LED module, one of which corresponds to an emissive face of the LED. The electrical power supply pads of each LED module are connected to the first and second conductive electrical power supply elements, respectively, and the connection area of an electrical power supply pad of an LED module for connection with the first conductive electrical power supply element is smaller than a receiving area of the first conductive element corresponding to the area of the first conductive element in a parallel plane to the connection areas of the power supply pads of the LED modules.
    Type: Application
    Filed: July 3, 2018
    Publication date: May 13, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Ivan-Christophe ROBIN, Bertrand DUPONT, Stephane CAPLET, Emeric DE FOUCAULD, Umberto ROSSINI, Alexei TCHELNOKOV, Francois TEMPLIER
  • Publication number: 20210134777
    Abstract: A method of manufacturing an optoelectronic device, including the steps of: forming, on a first surface of a first including assemblies of electronic components, a stack of insulating layers and of conductive tracks; forming, on another wafer, light-emitting diodes each comprising ends; forming a metal layer on at least a portion of the surface of the first wafer and another metal layer on at least a portion of the surface of the second wafer, the other metal layer being electrically coupled to the end of each light-emitting diode; placing into contact the metal layers; forming an insulated conductive via connecting another surface of the wafer to a conductive track; and forming insulated conductive trenches surrounding diodes.
    Type: Application
    Filed: June 11, 2019
    Publication date: May 6, 2021
    Applicant: Aledia
    Inventor: Ivan-Christophe Robin
  • Publication number: 20210126049
    Abstract: An emitting device comprising a first light emitter adapted to emit a first radiation and comprising at least one first semiconducting structure comprising a first semiconducting layer adapted to emit the first radiation, a second light emitter adapted to emit a second radiation different from the first radiation, the second light emitter comprising at least one second semiconducting structure comprising a second semiconducting layer adapted to emit the second radiation, and a third light emitter adapted to emit a third radiation different from the second and first radiations, the third light emitter comprising at least one third semiconducting layer adapted to emit a fourth radiation different from the third radiation, the third light emitter further comprising a radiation converter configured to convert the fourth radiation into the third radiation.
    Type: Application
    Filed: June 28, 2019
    Publication date: April 29, 2021
    Applicant: Aledia
    Inventors: Ying-Lan CHANG, Sylvia SCARINGELLA, Ivan-Christophe ROBIN, Abdelhay ABOULAICH
  • Patent number: 10944025
    Abstract: A light-emitting diode including: a first n-doped semiconductor layer configured to form a cathode, and a second p-doped semiconductor layer configured to form an anode, and together forming a p-n junction of the diode; an active zone located between the first layer and the second layer, including at least two emissive layers including a semiconductor capable of forming quantum wells, and a plurality of semiconductor barrier layers such that each emissive layer is located between two barrier layers; an n-doped semiconductor buffer layer located between the first layer and the active zone, the n-dope semiconductor of the buffer layer having a band gap energy less than or equal to about 97% of the band gap energy of the p-doped semiconductor of the second layer.
    Type: Grant
    Filed: March 25, 2014
    Date of Patent: March 9, 2021
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Ivan-Christophe Robin, Hubert Bono
  • Patent number: 10937827
    Abstract: A pseudosubstrate for an optoelectronic device suitable for the growth of light-emitting diodes including a substrate and a buffer structure formed on an upper face of the substrate. The buffer structure includes at least one first portion wherein one layer made of solid gallium nitride (GaN) delimits at least one free surface of a first type facing away from the upper face of the substrate, each free surface of the first type being suitable for the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a first wavelength.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: March 2, 2021
    Assignee: ALEDIA
    Inventors: Ivan-Christophe Robin, Jérôme Napierala