Abstract: An optoelectronic device having a set of pixels wherein each pixel has a sub-pixel capable of emitting a primary light beam, a set of pixels each pixel being adjacent to a pixel wherein each secondary pixel has at least one secondary sub-pixel capable of emitting a secondary light beam, a set of optical systems arranged so as to be able to cover an entire pixel belonging to one of the sets and at least part of the sub-pixels of at least one of the adjacent pixels belonging to the other set, the number of pixels being greater than twice the number of optical systems. At least one movement mechanism applies a relative movement between the set and the sets according to a predetermined sequence.

Abstract: An image display system includes at least one user parameter analyser configured to determine at least one parameter associated with a user, an image display screen having luminous pixels, at least one graphics processing unit configured to process at least one first main image that can be displayed on the image display screen and that is representative of a first zone of a main scene. The system further includes at least one image buffer device configured to store at least the first main image, and a graphics controller configured to control a display of at least one first secondary image on the image display screen, the first secondary image having a first portion of the first main image included in the first main image and positioned within the first main image as a function of a first user parameter.

Abstract: An optoelectronic device including a first circuit including at least one light-emitting diode emitting through a first surface of the first circuit and including first and second electrodes; a second circuit for controlling the light-emitting diode, positioned on a second surface of the first circuit opposite to the first surface, including first and second electrically-conductive pads; and an electrically-conductive layer located at the interface between the first and second circuits, the electrically-conductive layer being divided into first and second portions orthogonally to the stack of the first and second circuits, the first electrode being electrically coupled to the first conductive pad via the first portion of the conductive layer and the second electrode being electrically coupled to the second conductive pad via the second portion of the conductive layer.

Abstract: An optoelectronic device including an optoelectronic circuit including light-emitting diodes, thin-film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes, and the transistors stack further including conductive elements, between and through the insulating layers, the conductive elements connecting at least some of the transistors to the light-emitting diodes The device further includes a support having a surface, the support being flexible and/or the surface being curved and non-planar, the optoelectronic circuit being connected to the surface on the side of the thin-film transistors.

Abstract: An optoelectronic device including a support, at least a first conductive layer covering the support, display pixels including first and second opposite surfaces, bonded to the first conductive layer, each pixel including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first conductive layer, and an optoelectronic circuit bonded to the third surface and including at least two light-emitting diodes, at least one of the electrodes of each light-emitting diode being connected to the electronic circuit by the third surface, the optoelectronic circuit further comprising photoluminescent blocks covering the light-emitting diodes and conductive or semiconductor walls surrounding the photoluminescent blocks, and at least one second conductive layer electrically coupled to at least one of the pixels.

Abstract: Disclosed is a device including at least one emitting element and a polariser, each emitting element being configured to emit a first radiation having a first range of wavelengths, the polariser being configured to be traversed at least partially by the first radiation, each emitting element including an emitter and a converter the emitter being configured to emit a second radiation having a second range of wavelengths, the second range being distinct from the range, the converter being configured to at least partially absorb the second radiation and to emit the radiation in response, each converter being interposed between the corresponding radiation emitter and the polariser. Each converter is configured so that the first radiation is rectilinearly polarised along a polarisation direction.

Abstract: A display screen intended to display a multiple-resolution image and including a plurality of pixels distributed on a support, the screen including a first zone of a face of the support having a first density of pixels, enabling to display a first part of the image at a first resolution, and a second zone of the face of the support having a second density of pixels, strictly greater than said first density, enabling to display a second part of the image at a second resolution. The disclosure also relates to a display system including such a screen and a method for producing the screen.

Abstract: A method of manufacturing an optoelectronic device, including the steps of: forming, on a first surface of a first including assemblies of electronic components, a stack of insulating layers and of conductive tracks; forming, on another wafer, light-emitting diodes each comprising ends; forming a metal layer on at least a portion of the surface of the first wafer and another metal layer on at least a portion of the surface of the second wafer, the other metal layer being electrically coupled to the end of each light-emitting diode; placing into contact the metal layers; forming an insulated conductive via connecting another surface of the wafer to a conductive track; and forming insulated conductive trenches surrounding diodes.

Abstract: A device configured for a laser treatment including a substrate transparent for the laser and objects, each object being bonded to the substrate via a photonic crystal.

Abstract: An optoelectronic device having a substrate and a plurality of sets of light-emitting diodes where each set includes a plurality of light-emitting diodes, a first lower electrode, a second upper electrode, an electronic component of an electronic circuit formed in a first portion of the substrate, on the side of the face of the substrate that does not bear the light-emitting diodes, and a first conductive means formed through the first portion and electrically connecting a first terminal of the electronic component to one amongst the first and second electrodes. The first conductive means of a given set is electrically-insulated from the first conductive means of the other sets.

Abstract: Disclosed is a method for manufacturing a set of light emitters each including a light emitting structure and an electrical contact, the method including the steps of:—providing a wafer carrying a set of light emitting structures, each emitting structure being configured to emit a first radiation when an electric current flows through the emitting structure, and—manufacturing, for each emitting structure, an electric contact, the contact being electrically insulated from each other. The manufacturing includes:—forming a first set of at least two first contacts and at least one conductor, the contact of the first set being electrically connected to each other first contact of the one or the conductor,—injecting, for each contact belonging to the first set, a electric current through the contact and the corresponding emitting structure, and—observing a radiation emitted in response to the injection.

Abstract: A method of protecting optoelectronic devices against electrostatic discharges, each optoelectronic device comprising an optoelectronic circuit comprising at least one optoelectronic component from among a light-emitting diode or a photodiode.

Abstract: An optoelectronic device including: a first, p-doped semiconductor layer and a second, n-doped semiconductor layer which are superposed and form a p-n junction; a first electrode electrically connected to the first semiconductor layer and forming an anode of the device; a gate positioned against at least one lateral flank of the first semiconductor layer; a second electrode, positioned against a lateral flank of the second semiconductor layer, electrically connected to the second semiconductor layer and electrically isolated from the first semiconductor layer; and in which a portion of the second electrode is positioned against the gate such that the second electrode is electrically connected to the gate and forms both a gate electrode and a cathode of the device.

Abstract: An emitting device comprising a first light emitter adapted to emit a first radiation, and a second light emitter adapted to emit a second radiation different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter, the second light emitter comprising a second semiconducting structure and a second radiation converter, each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation, each radiation converter comprising a set of particles able to convert the third radiation into the first or second radiation, the particles of the first radiation converter being attached to a surface by a bulk of photosensitive resin and the particles of the second radiation converter being attached to a surface by grafting.

Abstract: An optoelectronic device, including: a support; at least one first electrically-conductive layer covering the support; display pixel circuits including first and second opposite surfaces bonded to the first electrically-conductive layer, each display pixel circuit including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first electrically-conductive layer, and at least one optoelectronic circuit bonded to the third surface and including at least one light-emitting diode, at least one of the electrodes of the light-emitting diode being connected to the electronic circuit by the third surface; at least one second electrically-conductive layer covering the display pixel circuits and electrically coupled to the electronic circuits of the display pixel circuits on the side of the second surface.

Abstract: Embodiments described herein comprise micro light emitting diodes (LEDs) and methods of forming such micro LEDs. In an embodiment, a nanowire LED comprises a nanowire core that includes GaN, an active layer shell around the nanowire core, where the active layer shell includes InGaN, a cladding layer shell around the active layer shell, where the cladding layer comprises p-type GaN, a conductive layer over the cladding layer, and a spacer surrounding the conductive layer. In an embodiment, a refractive index of the spacer is less than a refractive index of the cladding layer shell.

Abstract: An optoelectronic device including at least first and second light-emitting diodes, each including a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area including multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and of at least a portion of the first semiconductor portion, and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer. The device includes means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode.

Abstract: An image display system includes at least one user parameter analyser configured to determine at least one parameter associated with a user, an image display screen having luminous pixels, at least one graphics processing unit configured to process at least one first main image that can be displayed on the image display screen and that is representative of a first zone of a main scene. The system further includes at least one image buffer device configured to store at least the first main image, and a graphics controller configured to control a display of at least one first secondary image on the image display screen, the first secondary image having a first portion of the first main image included in the first main image and positioned within the first main image as a function of a first user parameter.

Abstract: A display device includes a support and first and second conductive electrical power supply elements, the first conductive element being arranged on the support. The display device also includes LED modules, each including at least one LED and two electrical power supply pads that are arranged on two opposite faces, respectively, of the LED module, one of which corresponds to an emissive face of the LED. The electrical power supply pads of each LED module are connected to the first and second conductive electrical power supply elements, respectively, and the connection area of an electrical power supply pad of an LED module for connection with the first conductive electrical power supply element is smaller than a receiving area of the first conductive element corresponding to the area of the first conductive element in a parallel plane to the connection areas of the power supply pads of the LED modules.

Abstract: A method of manufacturing an electronic device, including: a) forming a plurality of chips, each including a plurality of connection areas and at least one first pad; b) forming a transfer substrate including, for each chip, a plurality of connection areas and at least one second pad, one of the first and second pads being a permanent magnet and the other one of the first and second pads being either a permanent magnet or made of a ferromagnetic material; and c) affixing the chips to the transfer substrate to connect the connection areas of the chips to the connection areas of the transfer substrate, by using the magnetic force between the pads to align the connection areas of the chips with the corresponding connection areas of the transfer substrate.