Patents by Inventor Ivan-Christophe Robin
Ivan-Christophe Robin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10937827Abstract: A pseudosubstrate for an optoelectronic device suitable for the growth of light-emitting diodes including a substrate and a buffer structure formed on an upper face of the substrate. The buffer structure includes at least one first portion wherein one layer made of solid gallium nitride (GaN) delimits at least one free surface of a first type facing away from the upper face of the substrate, each free surface of the first type being suitable for the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a first wavelength.Type: GrantFiled: November 21, 2018Date of Patent: March 2, 2021Assignee: ALEDIAInventors: Ivan-Christophe Robin, Jérôme Napierala
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Patent number: 10923530Abstract: An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining, within the substrate, first semi-conductive or conductive portions which are electrically insulated from each other. The optoelectronic device also includes, for each first portion a first conductive contact pad on the second surface in contact with the first portion and a set of light-emitting diodes resting on the first surface and electrically connected to the first portion. The optoelectronic device also includes a conductive, at least partially transparent electrode layer covering all the light-emitting diodes; an insulating, at least partially transparent encapsulation layer covering the electrode layer; and at least one second conductive contact pad electrically connected to the electrode layer.Type: GrantFiled: December 6, 2019Date of Patent: February 16, 2021Assignee: AlediaInventors: Xavier Hugon, Ivan-Christophe Robin
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Patent number: 10886429Abstract: The invention relates to a method of manufacturing an optoelectronic device (1) produced on the basis of GaN, comprising an emission structure (10) configured to emit a first light radiation at the first wavelength (?1), the method comprising the following steps: i. producing a growth structure (20) comprising a nucleation layer (23) of Inx2Ga1-x2N at least partially relaxed; ii. producing a conversion structure (30), comprising an emission layer (33) configured to emit light at a second wavelength (?2), and an absorption layer (34) produced on the basis of InGaN; iii. transfer of the conversion structure (30) onto the emission structure (10) in such a way that the absorption layer (34) is located between the emission structure (10) and the emission layer (33) of the conversion structure.Type: GrantFiled: December 18, 2018Date of Patent: January 5, 2021Assignees: Commissariat a l'energie atomique et aux energies alternatives, THALESInventors: Amelie Dussaigne, Ivan-Christophe Robin
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Publication number: 20200357848Abstract: A pseudosubstrate for an optoelectronic device suitable for the growth of light-emitting diodes including a substrate and a buffer structure formed on an upper face of the substrate. The buffer structure includes at least one first portion wherein one layer made of solid gallium nitride (GaN) delimits at least one free surface of a first type facing away from the upper face of the substrate, each free surface of the first type being suitable for the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a first wavelength.Type: ApplicationFiled: November 21, 2018Publication date: November 12, 2020Inventors: Ivan-Christophe ROBIN, Jérôme NAPIERALA
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Publication number: 20200343413Abstract: An optoelectronic device including: a first, p-doped semiconductor layer and a second, n-doped semiconductor layer which are superposed and form a p-n junction; a first electrode electrically connected to the first semiconductor layer and forming an anode of the device; a gate positioned against at least one lateral flank of the first semiconductor layer; a second electrode, positioned against a lateral flank of the second semiconductor layer, electrically connected to the second semiconductor layer and electrically isolated from the first semiconductor layer; and in which a portion of the second electrode is positioned against the gate such that the second electrode is electrically connected to the gate and forms both a gate electrode and a cathode of the device.Type: ApplicationFiled: January 17, 2019Publication date: October 29, 2020Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, THALESInventors: Hubert BONO, Ivan-Christophe ROBIN
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Publication number: 20200303359Abstract: A method of manufacturing an electronic device, including: a) forming a plurality of chips, each including a plurality of connection areas and at least one first pad; b) forming a transfer substrate including, for each chip, a plurality of connection areas and at least one second pad, one of the first and second pads being a permanent magnet and the other one of the first and second pads being either a permanent magnet or made of a ferromagnetic material; and c) affixing the chips to the transfer substrate to connect the connection areas of the chips to the connection areas of the transfer substrate, by using the magnetic force between the pads to align the connection areas of the chips with the corresponding connection areas of the transfer substrate.Type: ApplicationFiled: May 4, 2018Publication date: September 24, 2020Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Stéphane Caplet, Marie-Claire Cyrille, Bertrand Delaet, Sophie Giroud
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Publication number: 20200194408Abstract: A method of manufacturing an LED display device, including the successive steps of: a) transferring, onto a planar surface of a support plate made of a transparent material having its other surface structured and defining a plurality of microlenses, a plurality of semiconductor chips, each including at least one LED; and b) forming a network of conductive interconnection tracks contacting the chips by their surface opposite to the support plate.Type: ApplicationFiled: September 3, 2018Publication date: June 18, 2020Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Stéphane Caplet, Umberto Rossini
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Patent number: 10685945Abstract: A luminous panel includes a substrate having electric connections and an array of microchips secured to the substrate and connected to the electric connections in order to be driven. Each microchip includes control circuit based on transistors formed in a silicon volume, the circuit being connected to the substrate connections, and a micro-LED secured to the control circuit and connected thereto in order to be controlled.Type: GrantFiled: November 15, 2016Date of Patent: June 16, 2020Assignee: Commissariat a l'Energie Atomique et aux EnergiesInventors: Ivan-Christophe Robin, Bruno Mourey
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Publication number: 20200161520Abstract: An optoelectronic device, including: a support; at least one first electrically-conductive layer covering the support; display pixel circuits including first and second opposite surfaces bonded to the first electrically-conductive layer, each display pixel circuit including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first electrically-conductive layer, and at least one optoelectronic circuit bonded to the third surface and including at least one light-emitting diode, at least one of the electrodes of the light-emitting diode being connected to the electronic circuit by the third surface; at least one second electrically-conductive layer covering the display pixel circuits and electrically coupled to the electronic circuits of the display pixel circuits on the side of the second surface.Type: ApplicationFiled: July 19, 2018Publication date: May 21, 2020Applicant: AlediaInventors: Xavier Hugon, Philippe Gilet, Ivan-Christophe Robin, Zine Bouhamri, Frédéric Mercier, Matthieu Charbonnier
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Publication number: 20200152113Abstract: A method of controlling an optoelectronic device including display pixels arranged in rows and in columns. The optoelectronic device further includes first electrodes, each connected to the display pixels of at least one row, second electrodes, each connected to the display pixels of at least one column, and a circuit for controlling the first and second electrodes. The method includes, in a first phase, the activation of the display pixels connected to one of the first electrodes and to one of the second electrodes by the following steps, simultaneously carried out: taking one of the first electrodes to a first potential, the other first electrodes being maintained at a second potential smaller than the first potential; and taking one of the second electrodes to a third potential smaller than the second potential, the other second electrodes being maintained at a fourth potential greater than the third potential and smaller than the second potential.Type: ApplicationFiled: July 19, 2018Publication date: May 14, 2020Applicant: AlediaInventors: Xavier Hugon, Philippe Gilet, Ivan-Christophe Robin, Zine Bouhamri, Frédéric Mercier, Matthieu Charbonnier
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Patent number: 10629773Abstract: Disclosed is a light-emitting diode containing: first and second semiconductor layers respectively n-doped and p-doped, forming a p-n junction; an active zone placed between the first and second layers, including an InXGa1-XN emitting layer able to form a quantum well, and two InYGa1-YN, where 0<Y<X, barrier layers between which the emitting layer is placed; and an intermediate layer, which is placed either in the barrier layer located between the emitting layer and the first layer and portions of which are then on either side of the intermediate layer, or placed between the barrier layer and the emitting layer. The intermediate layer includes a III-N semiconductor of bandgap wider than that of the barrier layer. The second layer includes GaN or InWGa1-WN, where 0<W<Y, and the first layer includes InVGa1-VN, where V>W>0.Type: GrantFiled: April 25, 2017Date of Patent: April 21, 2020Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Armelle Even, Miryam Elouneg-Jamroz, Ivan-Christophe Robin
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Publication number: 20200111833Abstract: An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining, within the substrate, first semi-conductive or conductive portions which are electrically insulated from each other. The optoelectronic device also includes, for each first portion a first conductive contact pad on the second surface in contact with the first portion and a set of light-emitting diodes resting on the first surface and electrically connected to the first portion. The optoelectronic device also includes a conductive, at least partially transparent electrode layer covering all the light-emitting diodes; an insulating, at least partially transparent encapsulation layer covering the electrode layer; and at least one second conductive contact pad electrically connected to the electrode layer.Type: ApplicationFiled: December 6, 2019Publication date: April 9, 2020Applicant: AlediaInventors: Xavier Hugon, Ivan-Christophe Robin
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Patent number: 10615299Abstract: An optoelectronic device including three-dimensional semiconductor elements predominantly made of a first compound selected from among the group consisting of Compounds III-V, Compounds II-VI, and Compounds IV. Each semiconductor element defines, optionally with insulating portions partially covering said semiconductor element, at least one first surface including contiguous facets angled relative to each other. The optoelectronic device includes quantum dots at least some of the seams between the facets. The quantum dots are predominantly made of a mixture of the first compound and an additional element and are suitable for emitting or receiving a first electromagnetic radiation at a first wavelength.Type: GrantFiled: September 29, 2015Date of Patent: April 7, 2020Assignees: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, AlediaInventors: Ivan-Christophe Robin, Amélie Dussaigne, Guy Feuillet, Stéphanie Gaugiran
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Publication number: 20200105970Abstract: Embodiments described herein comprise micro light emitting diodes (LEDs) and methods of forming such micro LEDs. In an embodiment, a nanowire LED comprises a nanowire core that includes GaN, an active layer shell around the nanowire core, where the active layer shell includes InGaN, a cladding layer shell around the active layer shell, where the cladding layer comprises p-type GaN, a conductive layer over the cladding layer, and a spacer surrounding the conductive layer. In an embodiment, a refractive index of the spacer is less than a refractive index of the cladding layer shell.Type: ApplicationFiled: September 29, 2018Publication date: April 2, 2020Inventors: Khaled AHMED, Sansaptak DASGUPTA, Ivan-Christophe ROBIN
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Patent number: 10580931Abstract: A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.Type: GrantFiled: June 2, 2017Date of Patent: March 3, 2020Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Matthew Charles, Yohan Desieres
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Patent number: 10559713Abstract: A light-emitting device including a substrate, three-dimensional semiconductor elements resting on the substrate, at least one shell at least partially covering the lateral walls of the semiconductor element, the shell including an active area having multiple quantum wells, and an electrode at least partially covering the shell, at least a portion of the active area being sandwiched between the electrode and the lateral walls of the semiconductor element. The active area includes an alternation of first semiconductor layers mainly including a first element and a second element and of second semiconductor layers mainly including the first element and the second element and further including a third element. In at least three of the layers, the mass concentration of the third element increases in the portion of the active layer as the distance to the substrate decreases.Type: GrantFiled: September 20, 2016Date of Patent: February 11, 2020Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Amélie Dussaigne, Pierre Ferret
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Patent number: 10535709Abstract: An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining, within the substrate, first semi-conductive or conductive portions which are electrically insulated from each other. The optoelectronic device also includes, for each first portion a first conductive contact pad on the second surface in contact with the first portion and a set of light-emitting diodes resting on the first surface and electrically connected to the first portion. The optoelectronic device also includes a conductive, at least partially transparent electrode layer covering all the light-emitting diodes; an insulating, at least partially transparent encapsulation layer covering the electrode layer; and at least one second conductive contact pad electrically connected to the electrode layer.Type: GrantFiled: August 24, 2018Date of Patent: January 14, 2020Assignee: AlediaInventors: Xavier Hugon, Ivan-Christophe Robin
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Patent number: 10497743Abstract: An optoelectronic device including a light emitting component and a field-effect transistor, the optoelectronic device including a first semiconductor layer made of a III-V or II-VI compound doped a first conductivity type; an active layer of the light-emitting component; and a second semiconductor layer made of the III-V or III-VI compound doped a second conductivity type opposite the first type, the active layer being sandwiched between the first and second semiconductor layers, wherein the channel of the field-effect transistor is located in the first semiconductor layer, the first semiconductor layer being uninterrupted between the field-effect transistor and the lightemitting component.Type: GrantFiled: December 1, 2016Date of Patent: December 3, 2019Assignee: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Hubert Bono, Thierry Bouchet, Matthew Charles, René Escoffier, Erwan Morvan
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Patent number: 10468452Abstract: A method of manufacturing elementary chips of a LED-based emissive display device, each chip including an inorganic semiconductor LED, a circuit for controlling the LED, and a plurality of areas of connection to an external device arranged on a connection surface of the chip.Type: GrantFiled: May 9, 2018Date of Patent: November 5, 2019Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Ivan-Christophe Robin, Hubert Bono
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Patent number: 10468436Abstract: A method of making a display device, the method including fabricating a matrix of light-emitting diodes (LEDs), each including electrodes accessible from a back face of the matrix and light-emitting surfaces accessible from a front face of the matrix; securing, onto the back face of the matrix, a stack of layers including at least one semiconducting layer, a gate dielectric layer, and a layer of gate conducting material; and starting from the stack of layers, fabricating an electronic control circuit electrically coupled to the electrodes, including fabricating field-effect transistors (FETs) including active zones and gates, the active zones being formed in the at least one semiconducting layer, and the gates being formed in the gate dielectric layer and in the layer of gate conducting material.Type: GrantFiled: April 10, 2018Date of Patent: November 5, 2019Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Ivan-Christophe Robin, Hubert Bono, Maud Vinet