Patents by Inventor Ivo Raaijmakers

Ivo Raaijmakers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10456808
    Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: October 29, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
  • Publication number: 20180243787
    Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
    Type: Application
    Filed: January 23, 2018
    Publication date: August 30, 2018
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
  • Patent number: 9895715
    Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: February 20, 2018
    Assignee: ASM IP HOLDING B.V.
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
  • Publication number: 20150217330
    Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
    Type: Application
    Filed: February 3, 2015
    Publication date: August 6, 2015
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
  • Patent number: 9023737
    Abstract: A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: May 5, 2015
    Assignee: ASM IP Holding B.V.
    Inventors: Julien Beynet, Ivo Raaijmakers, Atsuki Fukazawa
  • Publication number: 20140017908
    Abstract: A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.
    Type: Application
    Filed: June 20, 2013
    Publication date: January 16, 2014
    Inventors: Julien Beynet, Ivo Raaijmakers, Atsuki Fukazawa
  • Patent number: 8530340
    Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: September 10, 2013
    Assignee: ASM America, Inc.
    Inventors: Paul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
  • Patent number: 8343583
    Abstract: Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase.
    Type: Grant
    Filed: July 7, 2009
    Date of Patent: January 1, 2013
    Assignee: ASM International N.V.
    Inventors: Gert Jan Snijders, Ivo Raaijmakers
  • Patent number: 8317921
    Abstract: A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.
    Type: Grant
    Filed: May 6, 2005
    Date of Patent: November 27, 2012
    Assignee: ASM America, Inc.
    Inventors: Armand Ferro, Ivo Raaijmakers, Derrick Foster
  • Patent number: 8293597
    Abstract: A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then annealed such that the metal in regions directly overlying the patterned and exposed silicon reacts with the silicon to form uniform metal silicide at the desired locations.
    Type: Grant
    Filed: April 11, 2011
    Date of Patent: October 23, 2012
    Assignee: ASM International N.V.
    Inventor: Ivo Raaijmakers
  • Publication number: 20110269310
    Abstract: A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then annealed such that the metal in regions directly overlying the patterned and exposed silicon reacts with the silicon to form uniform metal silicide at the desired locations.
    Type: Application
    Filed: April 11, 2011
    Publication date: November 3, 2011
    Applicant: ASM INTERNATIONAL N.V
    Inventor: Ivo Raaijmakers
  • Publication number: 20110256718
    Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.
    Type: Application
    Filed: April 4, 2011
    Publication date: October 20, 2011
    Applicant: ASM INTERNATIONAL N.V.
    Inventors: Suvi P. Haukka, Ivo Raaijmakers, Wei Min Li, Juhana Kostamo, Hessel Sprey, Christiaan J. Werkhoven
  • Patent number: 7981791
    Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: July 19, 2011
    Assignee: ASM International N.V.
    Inventors: Suvi P. Haukka, Ivo Raaijmakers, Wei Min Li, Juhana Kostamo, Hessel Sprey, Christiaan J. Werkhoven
  • Patent number: 7927942
    Abstract: A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then annealed such that the metal in regions directly overlying the patterned and exposed silicon reacts with the silicon to form uniform metal silicide at the desired locations.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: April 19, 2011
    Assignee: ASM International N.V.
    Inventor: Ivo Raaijmakers
  • Patent number: 7921805
    Abstract: A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.
    Type: Grant
    Filed: January 21, 2010
    Date of Patent: April 12, 2011
    Assignee: ASM America, Inc.
    Inventors: Michael A. Todd, Ivo Raaijmakers
  • Patent number: 7893433
    Abstract: Thin, smooth silicon-containing films are prepared by deposition methods that utilize a silicon containing precursor. In preferred embodiments, the methods result in Si-containing films that are continuous and have a thickness of about 150 ? or less, a surface roughness of about 5 ? rms or less, and a thickness non-uniformity of about 20% or less. Preferred silicon-containing films display a high degree of compositional uniformity when doped or alloyed with other elements. Preferred deposition methods provide improved manufacturing efficiency and can be used to make various useful structures such as wetting layers, HSG silicon, quantum dots, dielectric layers, anti-reflective coatings (ARC's), gate electrodes and diffusion sources.
    Type: Grant
    Filed: September 12, 2007
    Date of Patent: February 22, 2011
    Assignee: ASM America, Inc.
    Inventors: Michael A. Todd, Ivo Raaijmakers
  • Publication number: 20100155859
    Abstract: A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then annealed such that the metal in regions directly overlying the patterned and exposed silicon reacts with the silicon to form uniform metal silicide at the desired locations.
    Type: Application
    Filed: December 19, 2008
    Publication date: June 24, 2010
    Inventor: Ivo Raaijmakers
  • Patent number: 7732331
    Abstract: The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film combined with an Al intermediate layer is used as a diffusion barrier on trench or via walls. For the formation, Al is deposited on the TiN thin film followed by copper filling the trench. Al diffuses to TiN layer and reacts with oxygen or nitrogen, which will stuff grain boundaries efficiently, thereby blocking the diffusion of copper successfully.
    Type: Grant
    Filed: November 16, 2004
    Date of Patent: June 8, 2010
    Assignee: ASM International N.V.
    Inventors: Ki-Bum Kim, Pekka J. Soininen, Ivo Raaijmakers
  • Publication number: 20100107978
    Abstract: A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.
    Type: Application
    Filed: January 21, 2010
    Publication date: May 6, 2010
    Applicant: ASM America, Inc.
    Inventors: Michael A. Todd, Ivo Raaijmakers
  • Patent number: 7682947
    Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
    Type: Grant
    Filed: May 30, 2007
    Date of Patent: March 23, 2010
    Assignee: ASM America, Inc.
    Inventors: Paul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer