Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including an organic semiconductor material represented by the following general formula (1), in which the organic semiconductor material includes, in at least one of R2 or R6, a substituent represented by the following general formula (2).

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer disposed to be opposed to and between the first electrode and the second electrode, in which the photoelectric conversion layer includes a first compound represented by the general formula and a second compound having a skeleton different from the first compound.

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: There is provided an imaging device and an electronic apparatus including an imaging device, where the imaging device includes: a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material, where the second organic semiconductor material comprises a subphthalocyanine material, and where the second organic semiconductor material has a highest occupied molecular orbital level ranging from ?6 eV to ?6.7 eV.

Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an—upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: An imaging element includes an organic photoelectric conversion layer formed of a mixture of an electron transport material, an organic pigment material, and a hole transport material. The electron transport material has higher electron mobility than the organic pigment material. The hole transport material has higher hole mobility than the organic pigment material. A relation between values of electron affinity of the electron transport material and the organic pigment material, a relation between values of ionization potentials of the hole transport material and the organic pigment material, and a relation between a value of the electron affinity of the electron transport material and a value of an ionization potential of the hole transport material have predetermined relations.

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A display device includes: a substrate including a display region and a peripheral region; a first wiring provided on a front face of the substrate; and a second wiring provided on a rear face of the substrate and electrically connected to the first wiring.

Abstract: A display device includes: a substrate including a display region and a peripheral region; a first wiring provided on a front face of the substrate; and a second wiring provided on a rear face of the substrate and electrically connected to the first wiring.

Abstract: A display device includes: a substrate including a display region and a peripheral region; a first wiring provided on a front face of the substrate; and a second wiring provided on a rear face of the substrate and electrically connected to the first wiring.

Abstract: A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode, with an insulating layer interposed in between; an etching stopper layer on the semiconductor layer; a pair of contact layers provided on the semiconductor layer, at least on both sides of the etching stopper layer; and source-drain electrodes electrically connected to the semiconductor layer through the pair of contact layers, and being in contact with the insulating layer.

Abstract: A thin-film transistor includes: an organic semiconductor layer; and a source electrode and a drain electrode spaced apart from each other and disposed to respectively overlap the organic semiconductor layer. The organic semiconductor layer INCLUDES: a lower organic semiconductor layer; and an upper organic semiconductor layer formed on the lower organic semiconductor layer and having solubility and conductivity higher than the lower organic semiconductor layer. The lower organic semiconductor layer extends from an area overlapping the source electrode to an area overlapping the drain electrode, while the upper organic semiconductor layer is disposed in each of the area overlapping the source electrode and the area overlapping the drain electrode so that the respective upper organic semiconductor layers are spaced apart from each other.

Abstract: A display unit includes, on a substrate: a plurality of light emitting devices in which a first electrode, an organic layer including a light emitting layer, and a second electrode are respectively and sequentially layered; and a black insulating layer separating the organic layer for the every light emitting device.

Abstract: A method of manufacturing a thin film transistor is provided. The method includes forming a lower organic semiconductor layer, forming an upper organic semiconductor layer on the lower organic semiconductor layer, the upper organic semiconductor layer having solubility and conductivity higher than those of the lower organic semiconductor layer, forming a source electrode and a drain electrode spaced apart from each other and respectively overlapping the upper organic semiconductor layer, and dissolving the upper organic semiconductor layer selectively by using the source electrode and the drain electrode as a mask.

Abstract: A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.