Abstract: An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signal which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e.g., the cell's bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without actually reading the memory state of the cell.

Abstract: A multi-bit memory device with a memory cell means for storing input information for an indefinite period of time. The multi-bit memory means stores information in up to Kn memory states (Kn>1). A memory cell programming means and comparator means is also included. The present multi-bit memory device also includes a voltage divider arrangement with pull-up devices in a memory array to provide stable and accurate reference voltages over process, temperature, and voltage variations.

Abstract: A multi-bit memory device with a memory cell means for storing input information for an indefinite period of time. The multi-bit memory means stores information in up to Kn memory states (Kn>1). A memory cell programming means and comparator means is also included. The present multi-bit memory device also includes a voltage divider arrangement with pull-up devices in a memory array to provide stable and accurate reference voltages over process, temperature, and voltage variations.

Abstract: A multi-bit memory device with a memory cell means for storing input information for an indefinite period of time. The multi-bit memory means stores information in up to Kn memory states (Kn>1). A memory cell programming means and comparator means is also included. The present multi-bit memory device also includes a voltage divider arrangement with pull-up devices in a memory array to provide stable and accurate reference voltages over process, temperature, and voltage variations.

Abstract: A multi-bit memory device with a memory cell means for storing input information for an indefinite period of time. The multi-bit memory means stores information in up to Kn memory states (Kn>1). A memory cell programming means and comparator means is also included. The present multi-bit memory device also includes a voltage divider arrangement with pull-up devices in a memory array to provide stable and accurate reference voltages over process, temperature, and voltage variations.

Abstract: A multi-bit memory device with a memory cell means for storing input information for an indefinite period of time. The multi-bit memory means stores information in up to Kn memory states (Kn>1). A memory cell programming means and comparator means is also included. The present multi-bit memory device also includes a voltage divider arrangement with pull-up devices in a memory array to provide stable and accurate reference voltages over process, temperature, and voltage variations.

Abstract: A multi-bit memory device with a memory cell means for storing input information for an indefinite period of time. The multi-bit memory means stores information in up to Kn memory states (Kn>1). A memory cell programming means and comparator means is also included. The present multi-bit memory device also includes a voltage divider arrangement with pull-up devices in a memory array to provide stable and accurate reference voltages over process, temperature, and voltage variations.

Abstract: Memory states of a multi-bit memory cell are demarcated by generating read reference signals having levels that constitute boundaries of the memory states. The read reference signals are dependent upon the levels of programming reference signals used for controlling the programming of the memory cell. The memory cell can thus be programmed without reading out its memory state during the programming process, with programming margins being assured by the dependence of the read reference signals on the programming reference signals. Both sets of reference signals may be generated by reference cells which track variations in the operating characteristics of the memory cell with changes in conditions, such as temperature and system voltages, to enhance the reliability of memory programming and readout.

Abstract: An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signal which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e.g., the cell's bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without actually reading the memory state of the cell.

Abstract: Method and apparatus for forming and joining large and small hems particularly on denim jeans and other types of trousers. An internally folded large hem is formed mechanically and in a highly accurate manner by engaging the end portion of a trouser leg under circumferential tension and folding a projected hem margin into the trouser leg while supporting opposite sides of the trouser leg in a region immediately adjacent to the desired hem fold line. A full depth small hem may be formed by compressing a limited portion of the large hem into a fold, with the raw edge of the fabric positioned substantially at the fold line of the large hem. The configuration of the compressed limited portion is retained until the sewing machine is in position to grip it and commence sewing. A continuous fold former is brought into position before sewing is commenced to complete the small hem folding initiated by the initial compression.

Abstract: A compound of the formula ##STR1## useful as a parasiticidal agent, are disclosed.

Abstract: A method and system are provided for delivering video from a server to a client over a communication medium with a limited bandwidth. An initial image quality that allows the video to be displayed in real time at the client is determined based on a predetermined frame rate and the limited bandwidth. Video having the initial image quality is transmitted to the client. The client sends to the server a snapshot request that specifies both an image in the video and a destination. In response to the request, the server generates a digital representation of the image that has a higher quality than the initial image quality. The server transmits the snapshot to the specified destination. The specified destination may be a destination other than the client, such as an image processing facility, thereby allowing the client to log off without waiting for delivery of the snapshot.

Abstract: Memory states of a multi-bit memory cell are demarcated by generating read reference signals having levels that constitute boundaries of the memory states. The read reference signals are dependent upon the levels of programming reference signals used for controlling the programming of the memory cell. The memory cell can thus be programmed without reading out its memory state during the programming process, with programming margins being assured by the dependence of the read reference signals on the programming reference signals. Both sets of reference signals may be generated by reference cells which track variations in the operating characteristics of the memory cell with changes in conditions, such as temperature and system voltages, to enhance the reliability of memory programming and readout.

Abstract: An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signal which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e.g., the cell's bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without actually reading the memory state of the cell.

Abstract: A new group of parasiticidal pyrazole derivatives has now been found.

Abstract: Memory states of a multi-bit memory cell are demarcated by generating read reference signals having levels that constitute boundaries of the memory states. The read reference signals are dependent upon the levels of programming reference signals used for controlling the programming of the memory cell. The memory cell can thus be programmed without reading out its memory state during the programming process, with programming margins being assured by the dependence of the read reference signals on the programming reference signals. Both sets of reference signals may be generated by reference cells which track variations in the operating characteristics of the memory cell with changes in conditions, such as temperature and system voltages, to enhance the reliability of memory programming and readout.

Abstract: Memory states of a multi-bit memory cell are demarcated by generating read reference signals having levels that constitute boundaries of the memory states. The read reference signals are dependent upon the levels of programming reference signals used for controlling the programming of the memory cell. The memory cell can thus be programmed without reading out its memory state during the programming process, with programming margins being assured by the dependence of the read reference signals on the programming reference signals. Both sets of reference signals may be generated by reference cells which track variations in the operating characteristics of the memory cell with changes in conditions, such as temperature and system voltages, to enhance the reliability of memory programming and readout.

Abstract: Memory states of a multi-bit memory cell are demarcated by generating read reference signals having levels that constitute boundaries of the memory states. The read reference signals are dependent upon the levels of programming reference signals used for controlling the programming of the memory cell. The memory cell can thus be programmed without reading out its memory state during the programming process, with programming margins being assured by the dependence of the read reference signals on the programming reference signals. Both sets of reference signals may be generated by reference cells which track variations in the operating characteristics of the memory cell with changes in conditions, such as temperature and system voltages, to enhance the reliability of memory programming and readout.

Abstract: An electrically alterable, non-volatile memory cell has more than 2 memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signal which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e.g., the cell's bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without actually reading the memory state of the cell.

Abstract: An electrically alterable, non-volatile multi-bit memory cell has K.sup.n predetermined memory states (K.sup.n >2), where K is a base of a predetermined number system and n is a number of bits stored per cell. Programming of the cell is verified by selecting a reference signal corresponding to the information to be stored and comparing a signal of the cell with the selected reference signal.