Patents by Inventor J. Howard

J. Howard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10647676
    Abstract: This invention pertains to bivalent linkers, and the synthesis and use thereof. In particular, this invention pertains to the synthesis and use of bivalent linkers in preparing vitamin, drug, diagnostic agent, and/or imaging agent conjugates. The present invention includes divalent linkers, which are alternatively referred to as bivalent linkers, that may be used to couple, link, bond, attach, or otherwise associate two or more chemical entities. This coupling, linking, attachment, or association may be used in the formation of conjugates of such chemical entities. Those chemical entities include targeting ligands and receptor-binding ligands, such as vitamins. Those chemical entities also include drugs for treating various diseases or disease states, and imaging and diagnostic agents for diagnosing, detecting, or otherwise monitoring various diseases or disease states.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: May 12, 2020
    Assignee: Endocyte, Inc.
    Inventors: Iontcho R. Vlahov, Christopher P. Leamon, Apparao Satyam, Stephen J. Howard
  • Publication number: 20200144497
    Abstract: A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.
    Type: Application
    Filed: January 3, 2020
    Publication date: May 7, 2020
    Inventors: David J. Howard, Jefferson E. Rose, Gregory P. Slovin, Nabil El-Hinnawy, Michael J. DeBar
  • Patent number: 10644235
    Abstract: A reduced parasitic capacitance radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM. A PCM contact connects a PCM routing interconnect with a passive segment of the PCM, wherein the passive segment extends outward and is transverse to the heating element. A heating element contact connects a heating element routing interconnect with a terminal segment of the heating element. The heating element contact is situated cross-wise to the PCM contact. The heating element routing interconnect is situated at a different interlayer metal level relative to the PCM routing interconnect so as to achieve the reduced parasitic capacitance. The heating element routing interconnect can be situated above the heating element. Alternatively, the heating element routing interconnect can be situated below the heating element.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: May 5, 2020
    Assignee: Newport Fab, LLC
    Inventors: Nabil El-Hinnawy, Gregory P. Slovin, Jefferson E. Rose, David J. Howard
  • Patent number: 10644236
    Abstract: A significantly reduced parasitic capacitance phase-change material (PCM) radio frequency (RF) switch includes an RF clearance zone including a step-wise structure of intermediate interconnect segments and vias to connect PCM contacts to setback top routing interconnects. The said RF clearance zone does not include cross-over interconnect segments. A low-k dielectric is situated in the RF clearance zone. A closed-air gap is situated in the RF clearance zone within the low-k dielectric. The setback top routing interconnects are situated higher over a substrate than the PCM contacts and the intermediate interconnect segments. The PCM RF switch may further include an open-air gap situated between the setback top routing interconnects.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: May 5, 2020
    Assignee: Newport Fab, LLC
    Inventors: David J. Howard, Nabil El-Hinnawy, Gregory P. Slovin, Jefferson E. Rose
  • Patent number: 10638746
    Abstract: A pest control device comprising a capacitive sensor array including a plurality of sensor pads, the capacitive sensor array being configured to generate an electrical output signal indicating the state of each sensor pad, and an electronic controller electrically connected to the capacitive sensor array, the electronic controller including a processor and a memory including a plurality of instructions, which, when executed by the processor, causes the processor to: receive the electrical output signals from the capacitive sensor array, determine a measured capacitance value for each sensor pad based on each electrical output signal, calculate a baseline for each sensor pad based on the measured capacitance value of the sensor pad, determine whether a difference between the measured capacitance value of at least one sensor pad and its corresponding baseline exceeds a first predetermined threshold, update a counter when the first predetermined threshold is exceeded, and record an event indicative of a presence
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: May 5, 2020
    Assignee: DOW AGROSCIENCES LLC
    Inventors: Phillip J. Howard, Richard V. Baxter, Jr., Douglas K. Brune, Uriel Kluk, Edward G. Beistle, Christopher Siler, Marc Black
  • Publication number: 20200136042
    Abstract: A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.
    Type: Application
    Filed: December 31, 2019
    Publication date: April 30, 2020
    Inventors: David J. Howard, Jefferson E. Rose, Gregory P. Slovin, Nabil EI-Hinnawy, Michael J. DeBar
  • Publication number: 20200136041
    Abstract: A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.
    Type: Application
    Filed: December 27, 2019
    Publication date: April 30, 2020
    Inventors: David J. Howard, Jefferson E. Rose, Gregory P. Slovin, Nabil El-Hinnawy, Michael J. DeBer
  • Patent number: 10633969
    Abstract: One methods for in-situ characterization of a reservoir rock includes: (a) sealing an interval corresponding to a selected depth or depths within the subterranean formation; (b) injecting a displacement fluid into the interval, wherein the displacement fluid displaces a reservoir fluid stored in the reservoir rock; (c) monitoring movement of the displacement fluid or the reservoir fluid in the reservoir rock; and (d) assessing wettability of the reservoir rock based on (c) or determining recovery rate of the reservoir fluid.
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: April 28, 2020
    Assignee: ConocoPhillips Company
    Inventors: James J. Howard, Siluni Wickramathilaka
  • Publication number: 20200119266
    Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
    Type: Application
    Filed: December 12, 2019
    Publication date: April 16, 2020
    Inventors: Jefferson E. Rose, Gregory P. Slovin, David J. Howard, Michael J. DeBar, Nabil El-Hinnawy
  • Publication number: 20200119265
    Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
    Type: Application
    Filed: December 10, 2019
    Publication date: April 16, 2020
    Inventors: Jefferson E. Rose, Gregory P. Slovin, David J. Howard, Michael J. DeBar, Nabil EI-Hinnawy
  • Patent number: 10622560
    Abstract: A semiconductor chip or system, such as a multi-chip module (MCM), a system-in-package (SiP), and/or a printed circuit board (PCB) module, includes a substrate, a resonator and/or a micro-electrical-mechanical system (MEMS), and a phase-change material (PCM) switch. The PCM switch includes a hearing element, a PCM situated over the heating element, and PCM contacts connected to passive segments of the PCM. The heating element is transverse to the PCM and approximately defines an active segment of the PCM. The PCM contacts are electrically connected to the resonator and/or the MEMS in a shared routing region of the semiconductor chip. The PCM switch is configured to engage or disengage the resonator and/or the MEMS. In one approach, a plurality of PCM switches are capable of reconfiguring an array of resonators and/or an array of MEMS. In another approach, a redundant PCM switch is electrically connected to a redundant resonator and/or a redundant MEMS.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: April 14, 2020
    Assignee: Newport Fab, LLC
    Inventors: David J. Howard, Nabil El-Hinnawy
  • Patent number: 10622262
    Abstract: A silicon-on-insulator (SOI) CMOS transistor and a SOI heterojunction bipolar transistor (HBT) are fabricated on the same semiconductor substrate. First and second SOI regions are formed over the semiconductor substrate. A SOI CMOS transistor is fabricated in the first SOI region, and a collector region of the SOI HBT is fabricated in the second SOI region. The collector region can be formed by performing a first implant to a local collector region in the second SOI region, and performing a second implant to an extrinsic collector region in the second SOI region, wherein the extrinsic collector region is separated from the local collector region. A SiGe base is formed over the collector region, wherein a dielectric structure separates portions of the SiGe region and the extrinsic collector region. The SOI CMOS transistor and SOI HBT may be used to implement a front end module of an RF system.
    Type: Grant
    Filed: October 6, 2017
    Date of Patent: April 14, 2020
    Assignee: Newport Fab LLC
    Inventors: Edward J. Preisler, Paul D. Hurwitz, Marco Racanelli, David J. Howard
  • Publication number: 20200111953
    Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
    Type: Application
    Filed: December 9, 2019
    Publication date: April 9, 2020
    Inventors: Jefferson E. Rose, Gregory P. Slovin, David J. Howard, Michael J. DeBar, Nabil El-Hinnaway
  • Publication number: 20200111952
    Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
    Type: Application
    Filed: December 6, 2019
    Publication date: April 9, 2020
    Inventors: Jefferson E. Rose, Gregory P. Slovin, David J. Howard, Michael J. DeBar, Nabil El-Hinnawy
  • Patent number: 10615071
    Abstract: A structure having isolated deep substrate vias with decreased pitch and increased aspect ratio is disclosed. The structure includes a device layer over a buried oxide layer, a deep trench extending through the device layer, a dielectric filler in the deep trench, via holes in the dielectric filler, and conductive fillers in the via holes being the isolated deep substrate vias. The dielectric filler may include silicon oxide. The conductive fillers may include tungsten or copper. An adjacent pair of the isolated deep substrate vias within the deep trench has a pitch equal to or less than 1.0 microns.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: April 7, 2020
    Assignee: Newport Fab, LLC
    Inventors: Arjun Kar-Roy, David J. Howard
  • Patent number: 10615072
    Abstract: A structure having isolated deep substrate vias with decreased pitch and increased aspect ratio is disclosed. The structure includes a device layer over a buried oxide layer, a deep trench extending through the device layer, a dielectric filler in the deep trench, via holes in the dielectric filler, and conductive fillers in the via holes being the isolated deep substrate vias. The dielectric filler may include silicon oxide. The conductive fillers may include tungsten or copper. An adjacent pair of the isolated deep substrate vias within the deep trench has a pitch equal to or less than 1.0 microns.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: April 7, 2020
    Assignee: Newport Fab, LLC
    Inventors: Arjun Kar-Roy, David J. Howard
  • Patent number: 10615338
    Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element underlying an active segment of the PCM are provided. A contact uniformity support layer is formed over the PCM. The PCM and the contact uniformity support layer are patterned. A contact dielectric is formed over the contact uniformity support layer. Slot lower portions of PCM contacts are formed extending through the contact dielectric and through the contact uniformity support layer, and connected to passive segments of the PCM. Wide upper portions of the PCM contacts are formed over the contact dielectric and over the slot lower portions of the PCM contacts. The contact dielectric separates the wide upper portions of the PCM contacts from the heating element so as to reduce parasitic capacitance of the RF switch. The contact uniformity support layer maintains a substantially constant thickness of the passive segments of the PCM.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: April 7, 2020
    Assignee: Newport Fab, LLC
    Inventors: Jefferson E. Rose, Gregory P. Slovin, Nabil El-Hinnawy, Michael J. DeBar, David J. Howard
  • Publication number: 20200102280
    Abstract: A process is provided for making esters of FDCA, in which an aqueous feed comprising glucaric acid is first reacted with a high boiling first alcohol in the presence of an acid catalyst and with removing water during the reaction, to form a first product mixture comprising a first ester of FDCA and the high boiling first alcohol, then unreacted high boiling first alcohol is removed from the first product mixture. The first ester of FDCA and the high boiling first alcohol is then transesterified with a lower boiling second alcohol selected from the group consisting of methanol, ethanol, isopropanol and n-propanol, to form a second product mixture comprising a second ester of FDCA with the lower boiling second alcohol, and the second ester of FDCA with the lower boiling second alcohol is recovered.
    Type: Application
    Filed: June 20, 2018
    Publication date: April 2, 2020
    Applicant: Archer Daniels Midland Company
    Inventors: Pam Anklam, William Chris Hoffman, Stephen J. Howard, Alexandra Sanborn, Mitchell Schultz, John G. Soper
  • Publication number: 20200095218
    Abstract: An integrated process is useful for producing 2,5-furandicarboxylic acid (FDCA) and/or a derivative thereof from a six-carbon sugar-containing feed. The process includes a) dehydrating a feed containing a six-carbon sugar unit, in the presence of a bromine source and of a solvent, to generate an oxidation feed that contains at least one of 5-hydroxymethylfurfural (HMF) and/or a derivative or derivatives of HMF in the solvent, together with at least one bromine containing species; b) contacting the oxidation feed from step (a) with a metal catalyst and with an oxygen source under oxidation conditions to produce an oxidation product mixture of at least FDCA and/or a derivative thereof, the solvent, and a residual catalyst: c) purifying and separating the mixture obtained in step (b) to obtain FDCA and/or a derivative thereof and the solvent; and d) recycling at least a portion of the solvent obtained in step (c) to step (a).
    Type: Application
    Filed: November 26, 2019
    Publication date: March 26, 2020
    Inventors: Stephen J. HOWARD, Kristina A. Kreutzer, Bhuma Rajagopalan, Eric R. Sacia, Alexandra Sanborn, Brennan Smith
  • Publication number: 20200091424
    Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element underlying an active segment of the PCM are provided. A contact uniformity support layer is formed over the PCM. The PCM and the contact uniformity support layer are patterned. A contact dielectric is formed over the contact uniformity support layer. Slot lower portions of PCM contacts are formed extending through the contact dielectric and through the contact uniformity support layer, and connected to passive segments of the PCM. Wide upper portions of the PCM contacts are formed over the contact dielectric and over the slot lower portions of the PCM contacts. The contact dielectric separates the wide upper portions of the PCM contacts from the heating element so as to reduce parasitic capacitance of the RF switch. The contact uniformity support layer maintains a substantially constant thickness of the passive segments of the PCM.
    Type: Application
    Filed: November 7, 2019
    Publication date: March 19, 2020
    Inventors: Jefferson E. Rose, Gregory P. Slovin, Nabil EI-Hinnawy, Michael J. DeBar, David J. Howard