Abstract: In examples, a relative skin reflectance of a captured image of a subject is quantified. Based on the relative skin reflectance, the captured image is determined as suitable or not suitable for biometric identification. When the captured image is determined not suitable, a remedial capture setting is calculated and provided to an image capturing resource. Another captured image of the subject, captured under the remedial capture setting, is received from the image capturing resource. The relative skin reflectance of the another captured image is quantified and based thereon, there is a determining of whether the another captured image is suitable or is not suitable.

Abstract: In examples, a relative skin reflectance of a captured image of a subject is determined. The determination selects from the captured image pixels of the subject's face and pixels in the background and normalizes luminance values of the skin pixels using the background pixels. The relative skin reflectance value is determined for the captured image, based on the normalized luminance values of the skin pixels. Optionally the relative skin reflectance value is qualified, based on thresholds of skin reflectance values, as suitable for biometric use. Optionally, a non-qualifying captured image is flagged and, optionally, another image is acquired, or the non-conforming image is processed further to transform the image into a suitable image for biometric analysis.

Abstract: An extendible or adjustable length level is provided. The level includes a frame, a slidable member, and a bushing. The slidable member is coupled to the frame and extends and retracts along the frame. The bushing is coupled to one of the frame or the slidable member and couples the frame and slidable member together.

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, a capacitive RF terminal, and an ohmic RF terminal. The capacitive RF terminal can include a first trench metal liner situated on a first passive segment of the PCM, and a dielectric liner separating the first trench metal liner from a first trench metal plug. The ohmic RF terminal can include a second trench metal liner situated on a second passive segment of the PCM, and a second trench metal plug ohmically connected to the second trench metal liner. Alternatively, the capacitive RF terminal and the ohmic RF terminal can include lower metal portions and upper metal portions. A MIM capacitor can be formed by the upper metal portion of the capacitive RF terminal, an insulator, and a patterned top plate.

Abstract: A process is provided for making esters of FDCA, in which an aqueous feed comprising glucaric acid is first reacted with a high boiling first alcohol in the presence of an acid catalyst and with removing water during the reaction, to form a first product mixture comprising a first ester of FDCA and the high boiling first alcohol, then unreacted high boiling first alcohol is removed from the first product mixture. The first ester of FDCA and the high boiling first alcohol is then transesterified with a lower boiling second alcohol selected from the group consisting of methanol, ethanol, isopropanol and n-propanol, to form a second product mixture comprising a second ester of FDCA with the lower boiling second alcohol, and the second ester of FDCA with the lower boiling second alcohol is recovered.

Abstract: A device, system, and method of controlling pests are disclosed. A pest control device includes a sensor having a sensor cell and a controller. A surface of the sensor cell is coated with an agent that reacts with a targeted biochemical analyte secreted by pests. The controller is coupled to the sensor and is configured to receive sensor data from the sensor cell indicative of a rate of change in sensor mass detected on the surface of the sensor cell, determine whether the rate of change in the sensor mass based on the received sensor data exceeds a predefined threshold rate, and transmit a pest detection alert notification to a server in response to a determination that the rate of change exceeds the predetermined threshold rate.

Abstract: A non-volatile adjustable phase shifter is coupled to a transceiver in a wireless communication device. The non-volatile adjustable phase shifter includes a non-volatile radio frequency (RF) switch. In one implementation, the non-volatile RF switch is a phase-change material (PCM) RF switch. In one approach, the non-volatile adjustable phase shifter includes a selectable transmission delay arm and a selectable transmission reference arm. A phase shift caused by the non-volatile adjustable phase shifter is adjusted when the non-volatile RF switch engages with or disengages from the selectable transmission delay arm. In another approach, the non-volatile adjustable phase shifter includes a selectable impedance element. A phase shift caused by the non-volatile adjustable phase shifter is adjusted when the non-volatile RF switch engages with or disengages from the selectable impedance element. In either approach, the phase shift changes a phase of RF signals being transmitted from or received by the transceiver.

Abstract: A radio frequency (RF) switch includes a heating element and a thermally resistive material adjacent to sides of the heating element. A thermally conductive and electrically insulating material is situated on top of the heating element. A phase-change material (PCM) is situated over the thermally conductive and electrically insulating material. The PCM has an active segment overlying the thermally conductive and electrically insulating material, and passive segments underlying input/output contacts of the RF switch. The RF switch may include a bulk substrate heat spreader, a silicon-on-insulator (SOI) handle wafer heat spreader, or an SOI top semiconductor heat spreader under the heating element.

Abstract: A rapid testing read out integrated circuit (ROIC) includes phase-change material (PCM) radio frequency (RF) switches residing on an application specific integrated circuit (ASIC). Each PCM RF switch includes a PCM and a heating element transverse to the PCM. The ASIC is configured to provide amorphizing and crystallizing electrical pulses to a selected PCM RF switch. The ASIC is also configured to determine if the selected PCM RF switch is in an OFF state or in an ON state. In one implementation, a testing method using the ASIC is disclosed.

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, and RF terminals having lower metal portions and upper metal portions. At least one of the lower metal portions can be ohmically separated from and capacitively coupled to passive segments of the PCM, while the upper metal portions are ohmically connected to the lower metal portions. Alternatively, the lower metal portions can be ohmically connected to passive segments of the PCM, while a capacitor is formed in part by at least one of the upper metal portions. Alternatively, at least one of the RF terminals can have a trench metal liner separated from a trench metal plug by a dielectric liner. The trench metal liner can be ohmically connected to passive segments of the PCM, while the trench metal plug is ohmically separated from, but capacitively coupled to, the trench metal liner.

Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element underlying an active segment of the PCM are provided. A contact uniformity support layer is formed over the PCM. The PCM and the contact uniformity support layer are patterned. A contact dielectric is formed over the contact uniformity support layer. Slot lower portions of PCM contacts are formed extending through the contact dielectric and through the contact uniformity support layer, and connected to passive segments of the PCM. Wide upper portions of the PCM contacts are formed over the contact dielectric and over the slot lower portions of the PCM contacts. The contact dielectric separates the wide upper portions of the PCM contacts from the heating element so as to reduce parasitic capacitance of the RF switch. The contact uniformity support layer maintains a substantially constant thickness of the passive segments of the PCM.

Abstract: A radio frequency (RF) switching circuit includes stacked phase-change material (PCM) RF switches. Each of the PCM RF switches includes a PCM, a heating element transverse to the PCM, and first and second heating element contacts. The first heating element contact is coupled to an RF ground, and the second heating element contact may also be coupled to an RF ground. Each of the PCM RF switches can also include first and second PCM contacts. A compensation capacitor can be coupled across the first and second PCM contacts in at least one of the PCM RF switches.

Abstract: An integrated process is useful for producing 2,5-furandicarboxylic acid (FDCA) and/or a derivative thereof from a six-carbon sugar-containing feed. The process includes a) dehydrating a feed containing a six-carbon sugar unit, in the presence of a bromine source and of a solvent, to generate an oxidation feed that contains at least one of 5-hydroxymethylfurfural (HMF) and/or a derivative or derivatives of HMF in the solvent, together with at least one bromine containing species; b) contacting the oxidation feed from step (a) with a metal catalyst and with an oxygen source under oxidation conditions to produce an oxidation product mixture of at least FDCA and/or a derivative thereof, the solvent, and a residual catalyst; c) purifying and separating the mixture obtained in step (b) to obtain FDCA and/or a derivative thereof and the solvent; and d) recycling at least a portion of the solvent obtained in step (c) to step (a).

Abstract: Methods of transcatheter delivery of a prosthetic heart valve. A distal region of a guide member assembly is advanced into a heart of a patient. The distal region is docked to native anatomy of the heart. A delivery device, including a collapsed prosthetic heart valve, is advanced over the docked guide member assembly. The collapsed prosthetic heart valve is located at an implantation site. The prosthetic heart valve is deployed from the delivery device, and then the delivery device is removed from the patient. At least a portion of the guide member assembly is removed from the patient. In some embodiments, the docking structure is docked to one or more of native mitral valve leaflets, chordae in the left ventricle, or walls of the left ventricle as part of a transseptal mitral valve delivery procedure.

Abstract: A device, system, and method of controlling pests are disclosed. A pest control device includes a sensor having a sensor cell and a controller. A surface of the sensor cell is coated with an agent that reacts with a targeted biochemical analyte secreted by pests. The controller is coupled to the sensor and is configured to receive sensor data from the sensor cell indicative of a rate of change in sensor mass detected on the surface of the sensor cell, determine whether the rate of change in the sensor mass based on the received sensor data exceeds a predefined threshold rate, and transmit a pest detection alert notification to a server in response to a determination that the rate of change exceeds the predetermined threshold rate.

Abstract: A radio frequency (RF) device includes a phase-change material (PCM) situated over a sheet of thermally conductive and electrically insulating material, a heating element situated under the sheet of thermally conductive and electrically insulating material, and an input/output terminal situated over the PCM. The heating element is situated in a dielectric. A heat spreader is situated under the dielectric and over a substrate. Metal interconnect layers can be situated under and/or over the PCM, with the substrate situated below the metal interconnect layers.

Abstract: A silicon-on-insulator (SOI) CMOS transistor and a SOI heterojunction bipolar transistor (HBT) are fabricated on the same semiconductor substrate. First and second SOI regions are formed over the semiconductor substrate. A SOI CMOS transistor is fabricated in the first SOI region, and a collector region of the SOI HBT is fabricated in the second SOI region. The collector region can be formed by performing a first implant to a local collector region in the second SOI region, and performing a second implant to an extrinsic collector region in the second SOI region, wherein the extrinsic collector region is separated from the local collector region. A SiGe base is formed over the collector region, wherein a dielectric structure separates portions of the SiGe region and the extrinsic collector region. The SOI CMOS transistor and SOI HBT may be used to implement a front end module of an RF system.

Abstract: A semiconductor structure includes a substrate having a first dielectric constant, a porous semiconductor layer situated over the substrate, and a crystalline epitaxial layer situated over the porous semiconductor layer. A first semiconductor device is situated in the crystalline epitaxial layer. The porous semiconductor layer has a second dielectric constant that is substantially less than the first dielectric constant such that the porous semiconductor layer reduces signal leakage from the first semiconductor device. The semiconductor structure can include a second semiconductor device situated in the crystalline epitaxial layer, and an electrical isolation region separating the first and second semiconductor devices.

Abstract: A grommet for a heat shield may comprise a radially outward surface and a radially inward surface opposite the radially outward surface. A plug opening may be formed in the radially outward surface. An exterior radial surface may extend from the radially outward surface to the radially inward surface. A shield groove may be formed in the exterior radial surface. An inward protrusion may extend radially inward from the radially inward surface.