Abstract: Physical properties of alumina particles in a chemical-mechanical polishing slurry delivery loop (28) are measured using a titration technique (44). Examples of the physical properties include crystallographic phase, surface charge, and surface charge density. The physical properties are correlated to a polishing rate (46). Specification limits are generated using the correlated data (482 and 486). The specification limits are used to determine if no adjustments are required to the polishing parameters (484), if adjustments are required to polishing parameters (488) or if the slurry requires replacement (489). This process can be automated and integrated into a conventional chemical-mechanical polishing processing system (20).

Abstract: A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.

Abstract: A method of manufacturing a semiconductor device includes providing (51) a substrate (19), providing (52) a colloid (17) having particles held in suspension, providing (53) a reagent (18), disposing (54) the substrate (19) in a processing tool (10), combining (55) the colloid (17) and the reagent (18) to form a slurry (28), decomposing (56) the reagent (18) into a surfactant and an oxidizer, using (57) the slurry (28) to process the substrate (19) in the processing tool (10), and removing (58) the substrate (19) from the processing tool (10).

Abstract: A method for chemical/mechanical polishing (CMP) uses a slurry (22). This slurry (22) contains one or more ammonium salts, such as ammonium nitride (NH.sub.4 NO.sub.3), as an oxidizing/etching species within the slurry (22). This slurry (22) is used to polish a metal layer (14) whereby the ammonium salt does not create slurry distribution problems, does not contain metallic species, does not contain mobile ions like potassium, and is environmentally safe.

Abstract: A method of sensing a particle in a mixture includes providing (52) the mixture (36) having a particle (29, 30), moving (54) the mixture (36) in a direction, shining (56) a light into a portion of the moving mixture (36), reflecting a portion of the light off of the particle (29, 30) in the moving mixture (36), detecting and measuring (57) the reflected light, and using (58) the measured reflected light to determine a size of the particle (29, 30).

Abstract: A method of using additives with silica-based slurries to enhance metal selectivity in polishing metallic materials utilizing a chemical-mechanical polishing (CMP) process. Additives are used with silica-based slurries to passivate a dielectric surface, such as a silicon dioxide (SiO.sub.2) surface, of a semiconductor wafer so that dielectric removal rate is reduced when CMP is applied. The additive is comprised of at least a polar component and an apolar component. The additive interacts with the surface silanol group of the SiO.sub.2 surface to inhibit particles of the silica-based slurry from interacting with hydroxyl molecules of the surface silanol group. By applying a surface passivation layer on the SiO.sub.2 surface, erosion of the SiO.sub.2 surface is reduced. However, the metallic surface is not influenced significantly by the additive, so that the selectivity of metal removal over oxide removal is enhanced.

Abstract: A point of use slurry dispensing system with controls for dilution, temperature and oxidizer/etchant/additive infusion. A slurry in unmixed form and a diluting agent are independently pumped to a pad on a CMP tool. Liquid heaters are used to heat the slurry and the diluting agent to a desirable temperature. The actual mixing occurs at the point of use on the pad or in a dispensing line just prior to the point of use. In some instances a third independent distribution line is used to dispense an oxidizer, etchant and/or chemical additive at or near the point of use.