Abstract: A method is provided for setting combustion parameters of an internal combustion engine operated with liquefied natural gas, the combustion parameters being sensed during operation of the internal combustion engine and being stored upon shutoff of the internal combustion engine. Also provided is a controller for carrying out the method. Provision is made that during a stoppage of the internal combustion engine, the duration of the stoppage, the ambient temperature and/or tank temperature, and the pressure in a liquefied gas tank are sensed; the influence thereof on a required adaptation of the combustion parameters that are to be set is identified from a characteristics diagram; and from the stored combustion parameters and the adaptation, initial combustion parameters are identified and are used upon startup of the internal combustion engine in order to control it.

Abstract: A process for preparing or regenerating peroxodisulfuric acid and its salts by electrolysis of an aqueous solution containing sulfuric acid and/or metal sulfates at diamond-coated electrodes without addition of promoters is described, with bipolar silicon electrodes which are coated with diamond on one side and whose uncoated silicon rear side serves as cathode being used.

Abstract: A solenoid valve for metering a fluid into an intake tract (1) of an engine, said solenoid valve comprising a solenoid assembly (2), an armature (3) interacting with the solenoid assembly (2) and a stroke-movable valve disc (4) connected to the armature (3) for opening and closing at least one through-flow aperture (6) formed in a valve plate (5).

Abstract: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.

Abstract: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.

Abstract: A process for preparing or regenerating peroxodisulfuric acid and its salts by electrolysis of an aqueous solution containing sulfuric acid and/or metal sulfates at diamond-coated electrodes without addition of promoters is described, with bipolar silicon electrodes which are coated with diamond on one side and whose uncoated silicon rear side serves as cathode being used.

Abstract: A method is provided for setting combustion parameters of an internal combustion engine operated with liquefied natural gas, the combustion parameters being sensed during operation of the internal combustion engine and being stored upon shutoff of the internal combustion engine. Also provided is a controller for carrying out the method. Provision is made that during a stoppage of the internal combustion engine, the duration of the stoppage, the ambient temperature and/or tank temperature, and the pressure in a liquefied gas tank are sensed; the influence thereof on a required adaptation of the combustion parameters that are to be set is identified from a characteristics diagram; and from the stored combustion parameters and the adaptation, initial combustion parameters are identified and are used upon startup of the internal combustion engine in order to control it.

Abstract: In a method for desalting aqueous solutions by means of electrodialysis in an electrochemical cell (10) comprising a first electrode (16) and a second electrode (20), wherein the second electrode (20) has a polarity opposite to the first electrode and wherein at the first electrode (16) an electrolysis gas and ions are formed, it is proposed that the electrolysis gas and the ions are reacted at the second electrode (20).

Abstract: Various techniques, methods and devices are disclosed where metal is deposited on a substrate, and stress caused by the metal to the substrate is limited, for example to limit a bending of the wafer.

Abstract: A solenoid valve for metering a fluid into an intake tract (1) of an engine, said solenoid valve comprising a solenoid assembly (2), an armature (3) interacting with the solenoid assembly (2) and a stroke-movable valve disc (4) connected to the armature (3) for opening and closing at least one through-flow aperture (6) formed in a valve plate (5).

Abstract: A method for manufacturing a chip package is provided. The method includes: forming an electrically insulating material over a chip side; selectively removing at least part of the electrically insulating material thereby forming a trench in the electrically insulating material, depositing electrically conductive material in the trench wherein the electrically conductive material is electrically connected to at least one contact pad formed over the chip side; forming an electrically conductive structure over the electrically insulating material, wherein at least part of the electrically conductive structure is in direct physical and electrical connection with the electrically conductive material; and depositing a joining structure over the electrically conductive structure.

Abstract: A semiconductor device may include: a barrier layer; an adhesion layer disposed over the barrier layer; a metallization layer disposed over the adhesion layer, wherein the metallization layer is part of a final metallization level of the semiconductor device.

Abstract: A method for operating an internal combustion engine (100), particularly of a motor vehicle, operated with a gas as fuel, a lambda value of an air/fuel mixture being regulated by means of lambda control as a function of a signal from a lambda probe (130), and, when a lean/rich jump is detected by the lambda probe (130), a mixture control factor (GRF) which controls the mixture composition being varied at least for a predeterminable time such that a shift of the lambda air ratio toward rich is caused, is characterized in that the mixture control factor (GRF) is varied in such a way that an additional defined shift of the lambda air ratio toward rich is caused.

Abstract: A wiring structure for a semiconductor device includes a multilayer metallization having a total thickness of at least 5 ?m and an interlayer disposed in the multilayer metallization with a first side of the interlayer adjoining one layer of the multilayer metallization and a second opposing side of the interlayer adjoining a different layer of the multilayer metallization. The interlayer includes at least one of W, WTi, Ta, TaN, TiW, and TiN or other suitable compound metal or a metal silicide such as WSi, MoSi, TiSi, and TaSi.

Abstract: Various techniques, methods and devices are disclosed where metal is deposited on a substrate, and stress caused by the metal to the substrate is limited, for example to limit a bending of the wafer.

Abstract: A method for manufacturing a chip package is provided. The method includes: forming an electrically insulating material over a chip side; selectively removing at least part of the electrically insulating material thereby forming a trench in the electrically insulating material, depositing electrically conductive material in the trench wherein the electrically conductive material is electrically connected to at least one contact pad formed over the chip side; forming an electrically conductive structure over the electrically insulating material, wherein at least part of the electrically conductive structure is in direct physical and electrical connection with the electrically conductive material; and depositing a joining structure over the electrically conductive structure.

Abstract: In a method for generating an internal combustion engine configured to run on both a gas fuel and a liquid fuel, the shutoff valve of the gas injection system is initially closed, the engine is then operated with the liquid fuel, and subsequently all gas injection valves of the gas injection system are opened in a predefined pattern while the shutoff valve is still closed.

Abstract: A wiring structure for a semiconductor device includes a multilayer metallization having a total thickness of at least 5 ?m and an interlayer disposed in the multilayer metallization with a first side of the interlayer adjoining one layer of the multilayer metallization and a second opposing side of the interlayer adjoining a different layer of the multilayer metallization. The interlayer includes at least one of W, WTi, Ta, TaN, TiW, and TiN or other suitable compound metal or a metal silicide such as WSi, MoSi, TiSi, and TaSi.

Abstract: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.

Abstract: One or more embodiments relate to a capacitor, comprising: a first electrode comprising a first layer including tantalum nitride, and a second layer including alpha-tantalum overlying the first layer; a dielectric layer; and a second electrode overlying the dielectric layer, the second electrode comprising a first layer including tantalum nitride, and a second layer including alpha-tantalum overlying the first layer.