Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device can include a semiconductor package including a package substrate, a first semiconductor die on the package substrate, a second semiconductor die on the package substrate, a third semiconductor die on the package substrate, and a bridge interconnect at least partially embedded in the package substrate. The bridge interconnect can include a first bridge section coupling the first semiconductor die to the second semiconductor die, a second bridge section coupling the second semiconductor die to the third semiconductor die, and a power-ground section between the first section and the second section, the power-ground section comprising first and second conductive traces coupled to the second semiconductor die.

Abstract: Disclosed embodiments include composite-bridge die-to-die interconnects that are on a die side of an integrated-circuit package substrate and that contacts two IC dice and a passive device that is in a molding material, where the molding material also contacts the two IC dice.

Abstract: A semiconductor package including a molded power delivery module arranged between a package substrate and a semiconductor chip and including a plurality of input conductive structures and a plurality of reference conductive structures, wherein the input conductive structures alternate between the plurality of reference conductive structures, wherein the input conductive structure is electrically coupled with a chip input voltage terminal and a package input voltage terminal, wherein each of the plurality of reference conductive structures are electrically coupled with a semiconductor chip reference terminal and a package reference terminal.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a substrate, a semiconductor die thereon, electrically coupled to the substrate, and an interposer adapted to connect the substrate to a circuit board. The interposer can include a major surface, a recess in the major surface, a first plurality of interconnects passing through the interposer within the recess to electrically couple the substrate to a circuit board, and a second plurality of interconnects on the major surface of the interposer to electrically couple the substrate to the circuit board, wherein each of the second plurality of interconnects comprises a smaller cross-section than some of the first plurality of interconnects.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a first rigid substrate, a second rigid substrate, a flexible substrate comprising a first portion attached to the first rigid substrate, a second portion attached to the second rigid substrate, a middle portion connecting the first portion to the second portion, wherein the middle portion is bent, and metallic traces therethrough, and a component forming a direct interface with the middle portion of the flexible substrate, the component electrically coupled to the metallic traces. In selected examples, the device further includes a casing.

Abstract: An electronic device is disclosed. In one example, the electronic device includes a circuit board comprising a recess a package in the recess, a semiconductor die coupled to the first side of the package, and a bridge extending from the first side of the package to the circuit board wherein the bridge electrically couples the package to the circuit board.

Abstract: Disclosed embodiments include multi-level fan-out integrated-circuit package substrates that provide a low-loss path to active and passive devices, by shunting away from interconnects and inductive loops. The multi-level form factor of a molded mass, allows for the low-loss path.

Abstract: According to the various aspects, a package substrate with a heterogeneous substrate core including a first core layer that is coextensive with the package substrate and extends through a first section and a second section of the substrate core, in which the first section is adjacent to and thicker than the second section. The first section having at least a second layer and/or a third layer to provide the difference in thickness with the second section.

Abstract: A semiconductor package may include a semiconductor device coupled to a package substrate. The semiconductor package may also include an integrated heat spreader coupled to the package substrate. The semiconductor package may further include a package connector mounted on the integrated heat spreader. According to various examples, a semiconductor system is also described. The semiconductor system may include a first semiconductor package. The first semiconductor package may include a first package connector, and a first integrated heat spreader. The first package connector may be mounted on the first integrated heat spreader. The semiconductor system may also include a second semiconductor package. The second semiconductor package may include a second package connector, and a second integrated heat spreader. The second package connector may be mounted on the second integrated heat spreader. The first package connector may be electrically connected to the second package connector.

Abstract: Disclosed embodiments include silicon interconnect bridges that are in a molded frame, where the molded frame includes passive devices and the silicon interconnect bridge includes through-silicon vias that couple to a redistribution layer on both the silicon interconnect bridge and the molded frame.

Abstract: Disclosed embodiments include molded interconnect bridges that are in a molded frame, where the molded frame includes passive devices that couple to a metal buildup layer that includes at least one power rail and one ground rail. The molded interconnects bridge is embedded in an integrated-circuit package substrate between a die side and a land side, and closer to the die side.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a semiconductor article having a package substrate, a first semiconductor die coupled to the package substrate, a second semiconductor die coupled to the package substrate and adjacent the first semiconductor die, and a bridge component therebetween coupling the first semiconductor die to the second semiconductor die. The bridge component can include a bridge substrate, a conductive trace therein, and a passive component coupled to the conductive trace.

Abstract: Disclosed embodiments include a multi-chip package that includes a stacked through-silicon via in a first semiconductive device, and the first semiconductive device is face-to-face coupled to a second semiconductive device by the stacked through-silicon via. The stacked through-silicon via includes a first portion that contacts a second portion, and the first portion emerges from an active semiconductive region of the first semiconductive device adjacent a keep-out region.

Abstract: A semiconductor device and associated methods are disclosed. In one example, dies are interconnected through a bridge in a substrate. A reference voltage stack extends over at least a portion of the interconnect bridge, and a passive component is coupled to the reference voltage stack. In one example, the passive component helps to reduce interference in the power supply to components in the semiconductor device, such as the dies and the interconnect bridge.

Abstract: An electronic device comprises an integrated circuit (IC) die. The IC die includes a first bonding pad surface and a first backside surface opposite the first bonding pad surface; a first active device layer arranged between the first bonding pad surface and the first backside surface; and at least one stacked through silicon via (TSV) disposed between the first backside surface and the first bonding pad surface, wherein the at least one stacked TSV includes a first buried silicon via (BSV) portion having a first width and a second BSV portion having a second width smaller than the first width, and wherein the first BSV portion extends to the first backside surface and the second BSV portion extends to the first active device layer.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a first rigid substrate, a second rigid substrate, a flexible substrate comprising a first portion attached to the first rigid substrate, a second portion attached to the second rigid substrate, a middle portion connecting the first portion to the second portion, wherein the middle portion is bent, and metallic traces therethrough, and a component forming a direct interface with the middle portion of the flexible substrate, the component electrically coupled to the metallic traces. In selected examples, the device further includes a casing.

Abstract: According to various examples, a device is described. The device may include an interposer. The device may also include a plurality of first through-silicon-vias disposed in the interposer, wherein the plurality of first through-silicon-vias have a first diameter. The device may also include a plurality of second through-silicon-vias disposed in the interposer, wherein the plurality of second through-silicon-vias have a second diameter larger than the first via diameter. The device may also include a first recess in the interposer positioned at bottom ends of the plurality of second through-silicon-vias.

Abstract: For circuit boards that may be used in computing devices, a horizontal inductor, or an array of such inductors, may be coupled to a circuit board having a plurality of signal routing lines in a second layer from a surface of the circuit board and the horizontal inductor is positioned over these signal routing lines and may generate magnetic field lines that directionally follow the signal routing lines. The horizontal inductor may have a coiled wire with a central axis that is oriented horizontally with the surface of the circuit board. The horizontal inductor, or an array of such inductors, may be coupled to a support board attached to the circuit board.

Abstract: A device and method of utilizing conductive thread interconnect cores. Substrates using conductive thread interconnect cores are shown. Methods of creating a conductive thread interconnect core are shown.

Abstract: The present disclosure relates to a semiconductor package, that may include a package substrate, a base die arranged on and electrically coupled to the package substrate, and at least one power plane module arranged on the package substrate at a periphery of the base die. The power plane module may include a top surface and a bottom surface, and at least one vertical interleaving metal layer electrically coupled at the bottom surface to the package substrate. The semiconductor package may further include a semiconductor device including a first section disposed on the base die, and a second section disposed on the power plane module, wherein the second section of the semiconductor device may be electrically coupled to the at least one vertical interleaving metal layer at the top surface of the power plane module.