Abstract: An electronic device comprises an integrated circuit (IC) die. The IC die includes a first bonding pad surface and a first backside surface opposite the first bonding pad surface; a first active device layer arranged between the first bonding pad surface and the first backside surface; and at least one stacked through silicon via (TSV) disposed between the first backside surface and the first bonding pad surface, wherein the at least one stacked TSV includes a first buried silicon via (BSV) portion having a first width and a second BSV portion having a second width smaller than the first width, and wherein the first BSV portion extends to the first backside surface and the second BSV portion extends to the first active device layer.

Abstract: An electronic circuit including a substrate having a first dielectric characteristic. The substrate can include a first side and a second side. An intermediary material can be disposed within the substrate. For instance, the intermediary material can be located between the first side and the second side. The intermediary material can include a second dielectric characteristic, where the second dielectric characteristic is different than the first dielectric characteristic. A first conductive layer can be disposed on the first side, and a second conductive layer can be disposed on the second side. A conductive path can be electrically coupled between the first conductive layer and the second conductive layer. The conductive path can be in contact with at least a portion of the intermediary material.

Abstract: A faceted integrated-circuit die includes a concave facet with an increased interconnect breakout area available to an adjacent device such as a rectangular IC die that is nested within the form factor of the concave facet. The concave facet form factor includes a ledge facet and a main-die facet. Multiple nested faceted IC dice are disclosed for increasing interconnect breakout areas and package miniaturization. A faceted silicon interposer has a concave facet that also provides an increased interconnect breakout area and package miniaturization.

Abstract: According to various examples, a device is described. The device may include a printed circuit board. The device may also include a first recess in the printed circuit board, wherein the first recess comprises a circular side surface and a bottom surface. The device may also include a first solder ball disposed in the first recess. The device may also include a first conductive wall positioned behind the circular side surface of the first recess, wherein the first conductive wall surrounds a side surface of the first solder ball.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device can include a semiconductor package including a package substrate, a first semiconductor die on the package substrate, a second semiconductor die on the package substrate, a third semiconductor die on the package substrate, and a bridge interconnect at least partially embedded in the package substrate. The bridge interconnect can include a first bridge section coupling the first semiconductor die to the second semiconductor die, a second bridge section coupling the second semiconductor die to the third semiconductor die, and a power-ground section between the first section and the second section, the power-ground section comprising first and second conductive traces coupled to the second semiconductor die.

Abstract: For circuit boards that may be used in computing devices, a horizontal inductor, or an array of such inductors, may be coupled to a circuit board having a plurality of signal routing lines in a second layer from a surface of the circuit board and the horizontal inductor is positioned over these signal routing lines and may generate magnetic field lines that directionally follow the signal routing lines. The horizontal inductor may have a coiled wire with a central axis that is oriented horizontally with the surface of the circuit board. The horizontal inductor, or an array of such inductors, may be coupled to a support board attached to the circuit board.

Abstract: A chip package including a chip; a substrate; an interposer module including a first layer having a larger surface area than the surface area of a second layer, wherein a bottom of the second layer is attached to a top of the first layer area creating an exposed surface area of the first layer; via openings extending at least partially through the first layer; via openings extending at least partially through the first layer and the second layer; a plurality of conductive routing electrically coupled between the via openings, wherein the chip is electrically coupled to the via openings of a top of the second layer, wherein the substrate is electrically coupled to via openings of a bottom of the first layer; and an electronic component electrically coupled to the via openings of the exposed surface area of the first layer.

Abstract: A semiconductor package including a molded power delivery module arranged between a package substrate and a semiconductor chip and including a plurality of input conductive structures and a plurality of reference conductive structures, wherein the input conductive structures alternate between the plurality of reference conductive structures, wherein the input conductive structure is electrically coupled with a chip input voltage terminal and a package input voltage terminal, wherein each of the plurality of reference conductive structures are electrically coupled with a semiconductor chip reference terminal and a package reference terminal.

Abstract: According to various examples, a device is described. The device may include a package substrate. The device may also include a plurality of semiconductor devices disposed on the package substrate, wherein the plurality of semiconductor devices comprises top surfaces and bottom surfaces. The device may also include a plurality of interconnects coupled to the package substrate, wherein the plurality of interconnects are adjacent to the plurality of semiconductor devices. The device may also include a flyover bridge coupled to the top surfaces of the plurality of semiconductor devices and the plurality of interconnects, wherein the flyover bridge is directly coupled to the package substrate by the plurality of interconnects, and wherein the bottom surfaces of the plurality of semiconductor devices are electrically isolated from the package substrate.

Abstract: A chip package includes a substrate; a first chip including thermal VIAs, wherein the first chip is coupled to the substrate; a conductive frame at least partially surrounding the first chip and coupled to the substrate, wherein the first chip and the conductive frame have a height that is substantially the same, wherein an exposed substrate surface is covered in a layer of encapsulation material having the same height; a second chip positioned on a first portion the first chip surface in such a way to expose at least a portion of the first chip surface, wherein the at least one exposed portion includes thermal VIAs; and at least one conductive plate positioned on the at least one exposed portion, wherein the conductive plate is coupled to the conductive frame and the thermal VIAs of the first chip.

Abstract: According to the various aspects, a package substrate with a heterogeneous substrate core including a first core layer that is coextensive with the package substrate and extends through a first section and a second section of the substrate core, in which the first section is adjacent to and thicker than the second section. The first section having at least a second layer and/or a third layer to provide the difference in thickness with the second section.

Abstract: According to the various aspects, a multi-chip semiconductor package includes a package substrate, an interconnect frame extending beyond a first side edge of the package substrate, the interconnect frame including a bottom surface positioned over and coupled to a top surface of the package substrate, a first semiconductor device positioned at least partially over and coupled to the interconnect frame, and a second semiconductor device positioned on the bottom surface of the interconnect frame alongside of the package substrate. The interconnect frame further includes a redistribution layer and a frame construct layer, and a plurality of vias coupled to the redistribution layer, with the frame construct layer further includes a recessed area, and the first semiconductor device is positioned in the recessed area.

Abstract: According to various examples, a device is described. The device may include a printed circuit board. The device may include a semiconductor package including an interposer with a molded portion, and one or more of semiconductor devices. The one or more semiconductor devices may have at least a first device coupled to the molded portion. The device may include a first connector coupled to the molded portion, and a second connector coupled to the printed circuit board, the first connector and the second connector configured to be connected with a cable for signal connection between the first device and the printed circuit board.

Abstract: The present disclosure relates to a semiconductor package, that may include a package substrate, a base die arranged on and electrically coupled to the package substrate, and at least one power plane module arranged on the package substrate at a periphery of the base die. The power plane module may include a top surface and a bottom surface, and at least one vertical interleaving metal layer electrically coupled at the bottom surface to the package substrate. The semiconductor package may further include a semiconductor device including a first section disposed on the base die, and a second section disposed on the power plane module, wherein the second section of the semiconductor device may be electrically coupled to the at least one vertical interleaving metal layer at the top surface of the power plane module.

Abstract: A device is provided, including a package substrate, a first interposer including a plurality of first vias extending through the first interposer, and a second interposer including a plurality of second vias extending through the second interposer. The first interposer and the second interposer may be arranged on the package substrate and may be spaced apart from each other.

Abstract: According to various examples, a device is described. The device may include a stiffener member including a first step section and a second step section. The device may also include a plurality of vias extending from or through the stiffener member. The device may be coupled to a printed circuit board.

Abstract: The present disclosure relates to a semiconductor package that may include a substrate, an interposer coupled to the substrate, a shield frame including at least one frame recess and at least one opening positioned over the interposer, a conductive shield layer on the shield frame, and a plurality of components coupled to the interposer.

Abstract: According to various examples, a device is described. The device may include a printed circuit board. The device may also include a first recess in the printed circuit board, wherein the first recess comprises a circular side surface and a bottom surface. The device may also include a first solder ball disposed in the first recess. The device may also include a first conductive wall positioned behind the circular side surface of the first recess, wherein the first conductive wall surrounds a side surface of the first solder ball.

Abstract: According to various examples, a device is described. The device may include an interposer. The device may also include a plurality of first through-silicon-vias disposed in the interposer, wherein the plurality of first through-silicon-vias have a first diameter. The device may also include a plurality of second through-silicon-vias disposed in the interposer, wherein the plurality of second through-silicon-vias have a second diameter larger than the first via diameter. The device may also include a first recess in the interposer positioned at bottom ends of the plurality of second through-silicon-vias.

Abstract: A device including a package substrate and a heat spreader may be provided. The package substrate may include a first surface and an opposing second surface. The package substrate may include a recess extending from the first surface, and a cavity extending from the second surface to the recess. The heat spreader may include a first portion and a second portion arranged on the first portion.