Abstract: An organic thin film transistor (OTFT) and an organic electroluminescent display (OLED) device are disclosed. The OTFT includes a drain electrode, functioning as a pixel electrode (anode electrode) of an organic emission element, such that the manufacturing process of an OLED device is simplified. In one embodiment, the OLED device includes: i) a substrate comprising an emission region and a non-emission region, ii) an organic thin film transistor, which comprises, a gate electrode, source and drain electrodes respectively overlapping both side portions of the gate electrode, and a semiconductor layer, and is disposed in the non-emission region, and iii) an organic light emitting element comprising a lower electrode, an organic layer, and an upper electrode.

Abstract: An organic electro luminescence (EL) display with low light transmittance material removed from an emission region. The organic EL display comprises a substrate having the emission region and a TFT region. A TFT is formed on the substrate in the TFT region and includes an active layer having source/drain regions, a gate electrode formed on a gate insulating layer, and source/drain electrodes electrically coupled to the source/drain regions. A passivation layer is formed in the TFT region only and it includes a via hole exposing one of the source/drain electrodes. An organic EL element is formed in the emission region and is electrically coupled to one of the source/drain electrodes exposed through the via hole.

Abstract: A method of partially crystallizing an organic thin film and a method of fabricating an organic thin film transistor (OTFT) are provided. An organic thin film used as an active layer of an OTFT is partially coated with an organic solvent by direct graphic art printing or partially annealed by laser beam irradiation, thereby local improving the crystallinity of the organic thin film. The charge mobility of the OTFT can be improved and crosstalk between devices can be reduced without additional patterning the organic thin film.

Abstract: An organic electroluminescent display device having an organic thin film transistor (OTFT) and a method of fabricating the same is disclosed. The display device can maintain an insulation property of a TFT and concurrently, ensure a sufficient capacitance by using an organic insulating layer for a gate insulating layer and using an inorganic insulating layer for a capacitor dielectric. In one embodiment, the organic electroluminescent display device includes a substrate having a capacitor region and a transistor region, a TFT formed in the transistor region of the substrate, and having a gate electrode, an organic semiconductor layer, a source electrode, and a drain electrode, a capacitor formed in the capacitor region of the substrate, and having a lower electrode and an upper electrode, and a display element connected to one of source/drain electrodes of the TFT.

Abstract: A thin film transistor and a method for manufacturing the same capable of reducing a change in a threshold voltage of the thin film transistor formed on a flexible substrate. The thin film transistor includes: a substrate, the substrate being flexible; a buffer layer having a low dielectric constant from about 1.2 to about 4.0 and formed on the substrate; a semiconductor layer formed on the buffer layer; a gate electrode; first insulation layer formed between the gate electrode and the semiconductor layer; a second insulation layer formed on the semiconductor layer and the gate electrode; and a source/drain electrode electrically connected to the semiconductor layer through a contact hole formed in the second insulation layer. Therefore, the thin film transistor can reduce a change in its threshold voltage, thereby reducing changes in brightness, gray scale, contrast, etc., of light-emitting devices using the thin film transistor.

Abstract: A flat panel display that can prevent a voltage drop of a driving power and, at the same time, minimizes the characteristic reduction of electronic devices located in a circuit region where various circuit devices are located includes: a substrate; an insulating film arranged on the substrate; a pixel region including at least one light emitting diode, the pixel region arranged on the insulating film and adapted to display an image; a circuit region arranged on the insulating film and including electronic devices adapted to control signals supplied to the pixel region; and a conductive film interposed between the substrate and the insulating film in a region corresponding to the pixel region and electrically connected to one electrode of the light emitting diode.

Abstract: Provided is a pressure sensor for electronic skin. The pressure sensor measures pressure levels, and includes conductive rubber, electrodes, and elastic rubber. The conductive rubber has conductivity that increases when a pressure exceeding a predetermined pressure is applied thereto. The electrodes are formed on either side surface of the conductive rubber to measure current flowing through the conductive rubber. The elastic rubber is formed on a top surface of one of the electrodes to disperse pressure applied to the conductive rubber.

Abstract: A poly(para-phenylenevinylene) (PPV) compound for forming a buffer layer of a thin film transistor represented by where R is a C1-C20 silyl group substituted with cyclohexyl or phenyl, m is an integer from 2 to 4, and n is an integer from 1 to 3,000; a composition for forming a buffer layer of a thin film transistor that is used to form the compound represented by formula 1 and includes a halo precursor polymer, a photobase generator, and a solvent; a thin film transistor including a buffer layer which is manufactured using the PPV compound; and a flat panel display including the thin film transistor. A patterned buffer layer can be formed under an organic semiconductor layer of an organic TFT by photolithography patterning using the silicon-containing PPV precursor. Accordingly, the alignment of the organic semiconductor layer of the organic TFT can be improved, and thereby, the characteristics of the organic TFT can be improved.

Abstract: Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and can prevent surface damage of the organic semiconductor layer and a method of manufacturing the organic thin film transistor, and an organic electroluminescence display device having the organic thin film transistor are provided. The method of patterning the organic thin film includes forming the organic thin film on a substrate, selectively printing a mask material on a portion of the organic thin film, dry etching an exposed portion of the organic thin film using the mask material, and removing the mask material.

Abstract: A method of manufacturing a thin film transistor is capable of enhancing pattern precision of an organic semiconductor layer and simplifying a patterning process. The method includes forming an organic insulating film on a substrate and forming a bank having the first and second concave portions and a third concave portion in the organic insulating film, the third concave portion being formed on the first and second concave portions. The method further includes forming a source electrode and a drain electrode in the first and second concave portions and forming an active layer in the third concave portion, the active layer contacting the source electrode and the drain electrode.

Abstract: A flexible flat panel display prevents electronic units, such as a flexible printed circuit board and a driving IC, from being separated from the flexible flat panel display even when the display unit is bent. The flexible flat panel display includes: a flexible display unit including a display area adapted to display an image, a first side and a second side parallel to edges of the display area, and a third side and a fourth side perpendicular to the first and second sides, the third side and the fourth being adapted to being bent; and electronic units arranged solely on at least one of the first and second sides and absent the third and fourth sides.

Abstract: Organic TFTs having uniform characteristics and a flat panel display having the organic TFT, wherein the organic TFTs include an organic semiconductor layer formed by spin coating are disclosed. One embodiment of the organic TFT includes: a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, an organic semiconductor layer disposed on the gate insulating film, and a source electrode and a drain electrode that contact the organic semiconductor layer, wherein a plurality of protrusion parts is formed on the gate insulating film and the protrusion parts extend toward the drain electrode from the source electrode.

Abstract: The invention provides an improved thin film transistor (TFT) that can be formed at room temperature and has an improved contact resistance between an active layer and source and drain electrodes, and further provides a flat display device using such a TFT. The TFT includes an active layer including at least two nano particle layers which include at least one nano particle type, an insulating layer interposed between the nano particle layers, a gate electrode insulated from the active layer, and source and drain electrodes formed in respective channels, the source and drain electrodes contact one of the nano particle layers of the active layer. The structure of the TFT facilitates the simultaneous manufacturing of a plurality of different types of TFTs.

Abstract: A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.

Abstract: Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and can prevent surface damage of the organic semiconductor layer and a method of manufacturing the organic thin film transistor, and an organic electroluminescence display device having the organic thin film transistor are provided. The method of patterning the organic thin film includes forming the organic thin film on a substrate, selectively printing a mask material on a portion of the organic thin film, dry etching an exposed portion of the organic thin film using the mask material, and removing the mask material.

Abstract: A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT.

Abstract: An organic light emitting display device including a flexible substrate and a plurality of thin film transistors (TFTs) formed on the substrate. The plurality of TFTs formed on the substrate include a pixel transistor for driving a pixel and a driver circuit transistor for driving a driver circuit, and a longitudinal direction of a channel region of the pixel transistor makes a first predetermined angle with a direction in which the substrate is bent. As such, it is possible to minimize a change in the electrical property of the TFTs formed on the flexible substrate and to thus reduce a change in the amount of current that flows in the channels of the TFTs.

Abstract: A flat panel display device is disclosed. In one embodiment, the flat panel display device includes i) a semiconductor layer including a channel region and a groove, wherein the channel region electrically connects a source electrode and a drain electrode, and the groove is configured to separate the channel region from adjacent thin film transistors and ii) a stop layer formed below at least a portion of the semiconductor layer. According to one embodiment of the invention, a semiconductor layer can be easily patterned without using a dry or wet etching technique such as photolithography.

Abstract: Provided are a method of manufacturing a plastic substrate having a TFT, a substrate manufactured thereby, a method of manufacturing a flat panel display device, and a flat display device manufactured thereby, which can be used for a flexible flat display device. The method includes: preparing a film in which a plurality of conductive patterns are included; bonding the film to a substrate; forming the TFT in a manner such that it is electrically connected to the conductive pattern on the film; and forming an insulating layer covering the TFT on the film.

Abstract: Provided are an organic thin film transistor (TFT), which can prevent deformation or separation due to mechanical stress, and a flat panel display device including the organic TFT. The organic TFT includes a gate electrode; a source electrode and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode, and contacting the source electrode and the drain electrodes; and a gate insulating layer insulating the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer. The gate insulating layer may be patterned in an island shape to permit adjacent portions of the substrate to flex freely, thereby reducing stress and deformation of the organic TFT and its component layers.