Abstract: A thermal image sensor and a method of manufacturing the same are provided. A row electrode and a column electrode are formed on a substrate. A multi-layer stack includes a sensing layer, a first sensing electrode and a second sensing electrode which are in contact with the sensing layer with a channel formed between the first sensing electrode and the second sensing electrode, an absorbing electrode connected to the first sensing electrode, an insulating layer configured to insulate the absorbing electrode from the second sensing electrode and the sensing layer, and a protecting layer configured to cover an exterior. Supports are configured to allow the multi-layer stack to float with respect to the substrate. A first intervening electrode and a second intervening electrode are configured to connect the low electrode and the column electrode to the first sensing electrode and the second sensing electrode through the supports.

Abstract: A microbolometer and a method of manufacturing the same are provided. The microbolometer may include a substrate, an absorption layer configured to absorb incoming light in a specific wavelength range and including an absorption body configured to float from the substrate and electrically isolated by a channel; a resistance layer provided between the substrate and the absorption body of the absorption layer and having a resistance value that changes based on temperature variations caused by thermal energy absorbed through the absorption layer; and a resistance reduction layer provided between the absorption layer and the resistance layer to reduce interface resistance and divided by a channel correspond to the channel of the absorption layer.

Abstract: A thermal image sensor and a method of manufacturing the same. The thermal image sensor includes: a substrate; a row electrode and a column electrode on the substrate; a multi-layer stack including an absorption layer and a temperature sensor; supporting arms that extend from diagonal corners of the multi-layer stack and that are spaced apart from both sides of the multi-layer stack, wherein the supporting arms have a concave-convex shape including a plurality of concave portions and a plurality of convex portions; and legs protruding from the row electrode and the column electrode, wherein the legs are connected to extended ends of the supporting arms to allow the multi-layer stack to float above the substrate.

Abstract: A security device includes a secure processor, a mail box, a cryptographic intellectual property (IP), a secure direct memory access (DMA) circuit, and an internal memory. The secure processor provides an isolated execution environment. The mail box transfers a request from a CPU to the secure processor. The cryptographic IP performs one or more secure operations, including a signature certification operation, an encryption/decryption operation, and an integrity verification operation, on secure data within the isolated execution environment and without intervention of the CPU. The secure DMA circuit controls the one or more secure operations within the isolated execution environment, wherein only the secure processor is configured to control the secure DMA circuit. The internal memory stores the secure data on which the one or more secure operations are performed. The cryptographic IP includes a DMA circuit configured to control data access to an external storage.

Abstract: Provided are an electronic system, an integrity verification device, and a method of performing an integrity verification operation.

Abstract: A security device includes a secure processor, a mail box, a cryptographic intellectual property (IP), a secure direct memory access (DMA) circuit, and an internal memory. The secure processor provides an isolated execution environment. The mail box transfers a request from a CPU to the secure processor. The cryptographic IP performs one or more secure operations, including a signature certification operation, an encryption/decryption operation, and an integrity verification operation, on secure data within the isolated execution environment and without intervention of the CPU. The secure DMA circuit controls the one or more secure operations within the isolated execution environment, wherein only the secure processor is configured to control the secure DMA circuit. The internal memory stores the secure data on which the one or more secure operations are performed. The cryptographic IP includes a DMA circuit configured to control data access to an external storage.

Abstract: A radiation detector includes: a radiation detecting module including a photoconductive layer containing at least one heavy metal; a voltage controller configured to detect current flowing through the photoconductive layer and control application of a voltage to the photoconductive layer based on the detected current; and a sealing part configured to seal the photoconductive layer and surround a portion of the radiation detecting module.

Abstract: Provided are photon counting apparatuses and methods, and radiographic imaging apparatuses configured to receive charge signals corresponding to incident radiation photons, and to count the incident radiation photons by using a plurality of counting bits, such that the counting changes only one counting bit from among the plurality of counting bits when the count value is increased by one. By using the photon counting methods, a data-change frequency of photon counting data corresponding to radiation photons is minimized while counting the radiation photons based on charge signals corresponding to input radiation photons.

Abstract: Provided are an electronic system, an integrity verification device, and a method of performing an integrity verification operation.

Abstract: Provided are an electronic system, an integrity verification device, and a method of performing an integrity verification operation.

Abstract: An apparatus for generating an image may include a plurality of scintillator layers configured to convert an incident beam into an optical signal; a plurality of micro cells configured to turn on or off depending on whether or not the micro cells detect the optical signal; a reaction depth determining unit configured to detect a decay pattern of the optical signal, on the basis of on/off signals of the micro cells, and configured to determine a type of the scintillator layers with which the incident beam has reacted; and/or a reading unit configured to decide an occurrence location of the incident beam and then generates a photographed image.

Abstract: An X-ray detector may include a silicon substrate including a first area and a second area; a plurality of pixels in the first area configured to detect X-rays; a control pad in the second area configured to supply a common control signal to the plurality of pixels; and/or a power supply pad in the first area configured to supply a power supply voltage to groups of pixels grouped from among the plurality of pixels.

Abstract: A transistor, a method of manufacturing a transistor, and an electronic device including a transistor are provided, the transistor may include a channel layer having a multi-layer structure. The channel layer may have a double layer structure or a triple layer structure. At least two layers of the channel layer may have different oxygen concentrations.

Abstract: A display panel including a display part including a plurality of sub-pixels configured to display a plurality of colors, and a plurality of data lines connected with the sub-pixels; a first test part configured to supply a test signal to (2K?1)th data lines (‘K’ is an integer above 0) by each color for the sub-pixels among the plurality of data lines; and a second test part configured to supply a test signal to 2Kth data lines by each color for the sub-pixels among the plurality of data lines when the first test part supplies the test signal. Further, a polarity of the test signal supplied by the second test part is opposite to a polarity of the test signal supplied by the first test part.

Abstract: A driver circuit outputs a result of classifying and counting photons based on one or more energy levels to a column line. The driver circuit includes a multiplexer for receiving the result from a counter, a driving inverter for receiving a signal from the multiplexer and a power supply, and a switch connected between the power supply and an input terminal of the driving inverter.

Abstract: A voltage reset method may include: acquiring a voltage that is changed with time by using an input photon; determining a timing for resetting the acquired voltage by using time information in a period where the acquired voltage increases; and/or resetting the acquired voltage on a basis of the determined voltage reset timing. A voltage reset apparatus may include: an acquisition unit configured to acquire a voltage that is changed with time by using an input photon; a determination unit configured to determine a timing for resetting the acquired voltage by using time information in a period where the acquired voltage increases; and/or a reset unit configured to reset the acquired voltage on a basis of the determined voltage reset timing.

Abstract: Disclosed is a voltage obtaining apparatus. The voltage obtaining apparatus includes a plurality of conversion units, which are connected to each other in parallel and respectively convert charge packets into voltages, and a control unit that controls a timing when the charge packets are respectively input to the plurality of conversion units. The control unit is configured to control the timing so that a corresponding charge packet is input to an nth conversion unit (where n denotes number of the conversion units) at a timing when an operation of an (n?1)th conversion unit is ended.

Abstract: A radiation detector includes: a radiation detecting module including a photoconductive layer containing at least one heavy metal; a voltage controller configured to detect current flowing through the photoconductive layer and control application of a voltage to the photoconductive layer based on the detected current; and a sealing part configured to seal the photoconductive layer and surround a portion of the radiation detecting module.

Abstract: Provided are photon counting apparatuses and methods, and radiographic imaging apparatuses configured to receive charge signals corresponding to incident radiation photons, and to count the incident radiation photons by using a plurality of counting bits, such that the counting changes only one counting bit from among the plurality of counting bits when the count value is increased by one. By using the photon counting methods, a data-change frequency of photon counting data corresponding to radiation photons is minimized while counting the radiation photons based on charge signals corresponding to input radiation photons.

Abstract: A photon counting detection (PCD) apparatus and radiographic imaging apparatus including the PCD apparatus are provided. The PCD apparatus includes a negative-feedback resistor instead of a negative-feedback capacitor in a signal amplifying apparatus thereof to minimize a leakage current, circuit noise, and a photoelectric accumulation effect at a high speed, so that an improved image may be obtained.