Abstract: A display panel including a display part including a plurality of sub-pixels configured to display a plurality of colors, and a plurality of data lines connected with the sub-pixels; a first test part configured to supply a test signal to (2K?1)th data lines (‘K’ is an integer above 0) by each color for the sub-pixels among the plurality of data lines; and a second test part configured to supply a test signal to 2Kth data lines by each color for the sub-pixels among the plurality of data lines when the first test part supplies the test signal. Further, a polarity of the test signal supplied by the second test part is opposite to a polarity of the test signal supplied by the first test part.

Abstract: A voltage reset method may include: acquiring a voltage that is changed with time by using an input photon; determining a timing for resetting the acquired voltage by using time information in a period where the acquired voltage increases; and/or resetting the acquired voltage on a basis of the determined voltage reset timing. A voltage reset apparatus may include: an acquisition unit configured to acquire a voltage that is changed with time by using an input photon; a determination unit configured to determine a timing for resetting the acquired voltage by using time information in a period where the acquired voltage increases; and/or a reset unit configured to reset the acquired voltage on a basis of the determined voltage reset timing.

Abstract: Disclosed is a voltage obtaining apparatus. The voltage obtaining apparatus includes a plurality of conversion units, which are connected to each other in parallel and respectively convert charge packets into voltages, and a control unit that controls a timing when the charge packets are respectively input to the plurality of conversion units. The control unit is configured to control the timing so that a corresponding charge packet is input to an nth conversion unit (where n denotes number of the conversion units) at a timing when an operation of an (n?1)th conversion unit is ended.

Abstract: A radiation detector includes: a radiation detecting module including a photoconductive layer containing at least one heavy metal; a voltage controller configured to detect current flowing through the photoconductive layer and control application of a voltage to the photoconductive layer based on the detected current; and a sealing part configured to seal the photoconductive layer and surround a portion of the radiation detecting module.

Abstract: A photon counting detection (PCD) apparatus and radiographic imaging apparatus including the PCD apparatus are provided. The PCD apparatus includes a negative-feedback resistor instead of a negative-feedback capacitor in a signal amplifying apparatus thereof to minimize a leakage current, circuit noise, and a photoelectric accumulation effect at a high speed, so that an improved image may be obtained.

Abstract: Provided are photon counting apparatuses and methods, and radiographic imaging apparatuses configured to receive charge signals corresponding to incident radiation photons, and to count the incident radiation photons by using a plurality of counting bits, such that the counting changes only one counting bit from among the plurality of counting bits when the count value is increased by one. By using the photon counting methods, a data-change frequency of photon counting data corresponding to radiation photons is minimized while counting the radiation photons based on charge signals corresponding to input radiation photons.

Abstract: Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.

Abstract: A pixel device having an improved energy resolution includes at least one photodiode and at least one voltage supply unit for applying a voltage to the photodiode. The pixel device includes a voltage storage unit and a voltage adjusting unit. In a precharge mode, the voltage storage unit stores a first anode voltage. In a sensing mode, the voltage adjusting unit adjusts a second anode voltage of the anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit.

Abstract: A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer.

Abstract: Provided are an electronic system, an integrity verification device, and a method of performing an integrity verification operation.

Abstract: Example embodiments disclose transistors and electronic devices including the transistors. A transistor may include a charge blocking layer between a gate insulating layer and a gate. An energy barrier between the gate insulating layer and the gate may be increased by the charge blocking layer. The transistor may be an oxide transistor including a channel layer formed of an oxide semiconductor.

Abstract: A method of driving an active display device. The method including recovering a threshold voltage of a switching transistor connected to a pixel. The recovering including applying a negative bias voltage to the switching transistor prior to charging each pixel during a charging period. The negative bias voltage is applied to a drain of the switching transistor.

Abstract: A method and apparatus for managing a key for secure storage of data. The apparatus includes a main controller configured to process a command, a cipher unit configured to encrypt a first key to form an encrypted key or encrypt data to form encrypted data based on a result of the main controller processing the command, and decrypt the encrypted key or the encrypted data based on the result of the main controller processing the command, a hash unit configured to hash the first key according to control of the main controller, a decrypted key memory configured to store the first key, and an encrypted key memory configured to store the encrypted key.

Abstract: According to example embodiments, an image sensor includes a charge sensing amplifier configured to amplify charges sensed by a sensing unit. The charge sensing amplifier includes an input terminal, an amplification terminal, an output terminal, a first capacitor connected between the input terminal and the amplification terminal, a first switch connected between the input terminal and the amplification terminal, a second capacitor connected between the amplification terminal and the output terminal, and a second switch connected between the output terminal and a reference voltage terminal.

Abstract: A photomultiplier detector cell for tomography includes a detector unit and a readOUT unit. The detector unit is configured to generate a digitized detect signal in response to receives light having a certain range of wavelength. The readOUT unit is configured to generate an output signal corresponding to the detect signal generated by the detector unit and to transmit the output signal to an external circuit. The readOUT unit is configured to transmit the output signal to the external circuit right after the detect signal is received.

Abstract: An X-ray detector including a plurality of chips on a printed circuit board, each of the plurality of chips including a plurality of pixel pads on a center portion of the printed circuit board and a plurality of pin pads surrounding the plurality of pixel pads, a plurality of pixel electrodes on and corresponding to the plurality of chips, a redistribution layer electrically connecting the plurality of pixel electrodes and the plurality of pixel pads, a plurality of first electrode pads on a surface opposite to a surface of the plurality of chips including the plurality of pin pads, a wire electrically connecting the plurality of first electrode pads and the plurality of pin pads, a photoconductor on the plurality of pixel electrodes, and a common electrode on the photoconductor.

Abstract: Disclosed is a voltage obtaining apparatus. The voltage obtaining apparatus includes a plurality of conversion units, which are connected to each other in parallel and respectively convert charge packets into voltages, and a control unit that controls a timing when the charge packets are respectively input to the plurality of conversion units. The control unit is configured to control the timing so that a corresponding charge packet is input to an nth conversion unit (where n denotes number of the conversion units) at a timing when an operation of an (n?1)th conversion unit is ended.

Abstract: Disclosed are a charge sensitive amplifier, a detector and an X-ray photographing apparatus including the same. The charge sensitive amplifier includes an amplification unit that amplifies an electric charge input thereto, a capacitor that has one end of the capacitor, connected to an input terminal of the amplification unit, and the other end connected to an output terminal of the amplification unit, and a buffer unit that has an input terminal and an output terminal which is connected to the input terminal of the amplification unit and the one end of the capacitor. Impedance at the input terminal of the buffer unit is lower than impedance at the output terminal of the buffer unit.

Abstract: A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.

Abstract: A method of calibrating a first threshold voltage that is a reference of X-ray detection for each unit cell of a plurality of unit cells of an X-ray detector may comprise detecting an X-ray by using a plurality of second threshold voltages for each of a plurality of X-rays having spectra at different energy levels; determining a correspondence relationship between energies having a maximum intensity in the spectra of X-rays and third threshold voltages at which a maximum number of photons having a same energy intensity are detected; and/or calibrating the first threshold voltage based on the determined correspondence relationship.