Abstract: Provided are photon counting apparatuses and methods, and radiographic imaging apparatuses configured to receive charge signals corresponding to incident radiation photons, and to count the incident radiation photons by using a plurality of counting bits, such that the counting changes only one counting bit from among the plurality of counting bits when the count value is increased by one. By using the photon counting methods, a data-change frequency of photon counting data corresponding to radiation photons is minimized while counting the radiation photons based on charge signals corresponding to input radiation photons.

Abstract: Provided are an electronic system, an integrity verification device, and a method of performing an integrity verification operation.

Abstract: Provided are an electronic system, an integrity verification device, and a method of performing an integrity verification operation.

Abstract: An apparatus for generating an image may include a plurality of scintillator layers configured to convert an incident beam into an optical signal; a plurality of micro cells configured to turn on or off depending on whether or not the micro cells detect the optical signal; a reaction depth determining unit configured to detect a decay pattern of the optical signal, on the basis of on/off signals of the micro cells, and configured to determine a type of the scintillator layers with which the incident beam has reacted; and/or a reading unit configured to decide an occurrence location of the incident beam and then generates a photographed image.

Abstract: An X-ray detector may include a silicon substrate including a first area and a second area; a plurality of pixels in the first area configured to detect X-rays; a control pad in the second area configured to supply a common control signal to the plurality of pixels; and/or a power supply pad in the first area configured to supply a power supply voltage to groups of pixels grouped from among the plurality of pixels.

Abstract: A transistor, a method of manufacturing a transistor, and an electronic device including a transistor are provided, the transistor may include a channel layer having a multi-layer structure. The channel layer may have a double layer structure or a triple layer structure. At least two layers of the channel layer may have different oxygen concentrations.

Abstract: A driver circuit outputs a result of classifying and counting photons based on one or more energy levels to a column line. The driver circuit includes a multiplexer for receiving the result from a counter, a driving inverter for receiving a signal from the multiplexer and a power supply, and a switch connected between the power supply and an input terminal of the driving inverter.

Abstract: A display panel including a display part including a plurality of sub-pixels configured to display a plurality of colors, and a plurality of data lines connected with the sub-pixels; a first test part configured to supply a test signal to (2K?1)th data lines (‘K’ is an integer above 0) by each color for the sub-pixels among the plurality of data lines; and a second test part configured to supply a test signal to 2Kth data lines by each color for the sub-pixels among the plurality of data lines when the first test part supplies the test signal. Further, a polarity of the test signal supplied by the second test part is opposite to a polarity of the test signal supplied by the first test part.

Abstract: A voltage reset method may include: acquiring a voltage that is changed with time by using an input photon; determining a timing for resetting the acquired voltage by using time information in a period where the acquired voltage increases; and/or resetting the acquired voltage on a basis of the determined voltage reset timing. A voltage reset apparatus may include: an acquisition unit configured to acquire a voltage that is changed with time by using an input photon; a determination unit configured to determine a timing for resetting the acquired voltage by using time information in a period where the acquired voltage increases; and/or a reset unit configured to reset the acquired voltage on a basis of the determined voltage reset timing.

Abstract: Disclosed is a voltage obtaining apparatus. The voltage obtaining apparatus includes a plurality of conversion units, which are connected to each other in parallel and respectively convert charge packets into voltages, and a control unit that controls a timing when the charge packets are respectively input to the plurality of conversion units. The control unit is configured to control the timing so that a corresponding charge packet is input to an nth conversion unit (where n denotes number of the conversion units) at a timing when an operation of an (n?1)th conversion unit is ended.

Abstract: A radiation detector includes: a radiation detecting module including a photoconductive layer containing at least one heavy metal; a voltage controller configured to detect current flowing through the photoconductive layer and control application of a voltage to the photoconductive layer based on the detected current; and a sealing part configured to seal the photoconductive layer and surround a portion of the radiation detecting module.

Abstract: Provided are photon counting apparatuses and methods, and radiographic imaging apparatuses configured to receive charge signals corresponding to incident radiation photons, and to count the incident radiation photons by using a plurality of counting bits, such that the counting changes only one counting bit from among the plurality of counting bits when the count value is increased by one. By using the photon counting methods, a data-change frequency of photon counting data corresponding to radiation photons is minimized while counting the radiation photons based on charge signals corresponding to input radiation photons.

Abstract: A photon counting detection (PCD) apparatus and radiographic imaging apparatus including the PCD apparatus are provided. The PCD apparatus includes a negative-feedback resistor instead of a negative-feedback capacitor in a signal amplifying apparatus thereof to minimize a leakage current, circuit noise, and a photoelectric accumulation effect at a high speed, so that an improved image may be obtained.

Abstract: Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.

Abstract: A pixel device having an improved energy resolution includes at least one photodiode and at least one voltage supply unit for applying a voltage to the photodiode. The pixel device includes a voltage storage unit and a voltage adjusting unit. In a precharge mode, the voltage storage unit stores a first anode voltage. In a sensing mode, the voltage adjusting unit adjusts a second anode voltage of the anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit.

Abstract: A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer.

Abstract: Provided are an electronic system, an integrity verification device, and a method of performing an integrity verification operation.

Abstract: Example embodiments disclose transistors and electronic devices including the transistors. A transistor may include a charge blocking layer between a gate insulating layer and a gate. An energy barrier between the gate insulating layer and the gate may be increased by the charge blocking layer. The transistor may be an oxide transistor including a channel layer formed of an oxide semiconductor.

Abstract: A method of driving an active display device. The method including recovering a threshold voltage of a switching transistor connected to a pixel. The recovering including applying a negative bias voltage to the switching transistor prior to charging each pixel during a charging period. The negative bias voltage is applied to a drain of the switching transistor.

Abstract: A method and apparatus for managing a key for secure storage of data. The apparatus includes a main controller configured to process a command, a cipher unit configured to encrypt a first key to form an encrypted key or encrypt data to form encrypted data based on a result of the main controller processing the command, and decrypt the encrypted key or the encrypted data based on the result of the main controller processing the command, a hash unit configured to hash the first key according to control of the main controller, a decrypted key memory configured to store the first key, and an encrypted key memory configured to store the encrypted key.