Abstract: There are provided a gate driver circuit and an operating method thereof. The gate driver circuit includes an output signal generating unit including a plurality of switch devices generating output signals, a selecting circuit unit generating a plurality of control signals according to a set selection state, and a plurality of driving circuit units receiving a reference signal and the plurality of control signals to control the plurality of switch devices, wherein the plurality of switch devices determine a level of the output signal by the plurality of control signal.

Abstract: There is provided a driving apparatus for driving an interleaved power factor correction circuit including a first main switch and a second main switch performing a switching operation with a predetermined phase difference and a first auxiliary switch and a second auxiliary switch forming a transformation path for surplus power existing before an ON operation of the first main switch and a second main switch, respectively, including: an input unit obtaining an input signal; a current sensing unit obtaining information regarding a current of the interleaved power factor correction circuit; and an output unit outputting a first control signal with respect to the first main switch, a third control signal with respect to the second main switch, a second control signal with respect to the first auxiliary switch, and a fourth control signal with respect to the second auxiliary switch, based on the input signal and the current information.

Abstract: There are provided a gate driver circuit and an operating method thereof.

Abstract: There is provided a driving circuit including: a signal delay unit including a first delay unit delaying a high level input signal in a case in which an input signal has a high level, and a second delay unit delaying a low level input signal when the input signal has a low level; a signal output unit including first and second transistors connected to the first and second delay units and performing a switching operation under the control of the first and second delay units, respectively; and an output holding unit maintaining an output voltage at a level equal to that immediately before the first and second transistors are turned off, when the first and second transistors are simultaneously turned off.

Abstract: There are provided a noise filter circuit and an operating method thereof. A noise filter circuit includes a first delay circuit, and a second delay circuit connected to the first delay circuit in series, wherein the first delay circuit and the second delay circuit each include at least one inverter and at least one delay element for generating a predetermined delay, and the first delay circuit and the second delay circuit have different filtering characteristics.

Abstract: There is provided a driver device for a power factor correction circuit including first and second main switches that are switched on and off with a phase difference therebetween, and first and second auxiliary switches that provide conduction paths of surplus voltage in the first and second main switches before the first and second main switches are switched on, the driver device including: an input unit receiving a plurality of input signals; and an output unit outputting a first control signal for the first main switch, a second control signal for the second main switch, a third control signal for the first auxiliary switch, and a fourth control signal for the second auxiliary switch based on a plurality of input signals.

Abstract: There are provided a driving circuit, a driving module, a motor driving apparatus capable of adjusting a driving current driving a power semiconductor device, the driving circuit including a driving unit including a plurality of drivers and selecting a corresponding driver among the plurality of drivers according to a selection signal to determine a current level of a driving signal for driving a semiconductor device, a timing controlling unit detecting a phase shift time of the driving signal transferred to the semiconductor device and comparing the detected time with a preset reference time to control the phase shift time of the driving signal, and a driving controlling unit providing the selection signal for selecting a driver to be driven among the plurality of drivers of the driving unit according a control signal from the outside and a timing control signal of the timing controlling unit.

Abstract: There is provided an overheating protection circuit, including a temperature-variable voltage generating unit generating a temperature-variable voltage by adding a temperature-proportional voltage increasing with an increase in temperature and a first turn-on voltage decreasing with an increase in temperature; and an overheating prevention signal generating unit comparing the temperature-variable voltage and a second turn-on voltage decreasing with an increase in temperature to generate an overheating prevention signal, wherein the first turn-on voltage and the second turn-on voltage have the same distribution.

Abstract: There are provided a power factor correction apparatus capable of driving a main switch and an auxiliary switch using a single driving signal, and a power supplying apparatus and a motor driving apparatus having the same, the power factor correction apparatus including: a power factor correction unit having a main switch switching input power to correct a power factor of the input power and an auxiliary switch turned on before the main switch is turned on to form a transfer path for surplus power; and a control unit controlling operations of the main switch and the auxiliary switch based on a single input signal.

Abstract: The present invention relates to a semiconductor circuit including: a delay unit for delaying an input signal by a predetermined time to output the delayed signal; a voltage adjusting unit for charging and discharging voltage according to a level of the input signal; and a combination unit for controlling the charging and discharging operations of the voltage adjusting unit according to signals generated using the level of the input signal and a level of the signal output from the delay unit, and it is possible to effectively remove low level noise and high level noise which are respectively mixed in a high level signal and a low level signal input to the semiconductor circuit.

Abstract: A portable laser blood sampling device equipped with a dual safety device and a disposable cap used therewith are provided. Specifically, a portable laser blood sampling device equipped with a dual safety device which enables safe laser irradiation when a laser is irradiated to the outside by a laser module and a disposable cap used therewith are provided.

Abstract: A positive active material and a lithium battery including the positive active material. The positive active material includes a large diameter active material and a small diameter active material, wherein the small diameter active material includes a Ni-based lithium-transition metal composite oxide and a coating layer including a Mn-containing compound on at least a portion of the surface thereof.

Abstract: A positive active material for a lithium secondary battery is a compound represented by Formula 1 and is in a form of primary particles having a particle diameter in a range of 80 to 400 nm. Formula 1: LiaNixCoyMnzM1-x-y-zO2, wherein metal M is selected from the group of B, Cr, V, Ti, Fe, Zr, Zn, Si, Y, Nb, Ga, Sn, Mo, and W, 1.0?a?1.2, 0.9?x?0.95, 0.1?y?0.5, 0.0?z?0.7, and 0.0<1?x?y?z?0.3.

Abstract: Disclosed herein is a semiconductor package, including: a substrate having a first surface and a second surface; at least one semiconductor device formed on the first surface of the substrate; first lead frames respectively formed at both sides of the first surface of the substrate; and second lead frames respectively formed at both sides of the second surface of the substrate, wherein the first lead frame and the second lead frame are spaced apart from each other by an isolation distance base.

Abstract: A positive electrode including a current collector and a positive active material layer formed on the current collector, wherein the positive active material layer includes a positive active material, a conductive agent, and the boron-containing inorganic binder having a network structure; a method of manufacturing the same; and a lithium battery including the positive electrode.

Abstract: A nickel composite hydroxide for a lithium secondary battery represented by Formula 1 below with a small compositional variation in M: Ni1-x-y-zCoxMyMnz(OH)2??(1), where, in Formula 1, M is aluminum (Al), zirconium (Zr), titanium (Ti), magnesium (Mg), silicon (Si), or zinc (Zn), x is a number from 0 to 0.5, y is a number from 0.01 to 0.2, and z is a number from 0 to 0.5.

Abstract: Disclosed herein is a semiconductor package, including: a substrate having a first surface and a second surface; at least one semiconductor device formed on the first surface of the substrate; first lead frames respectively formed at both sides of the first surface of the substrate; and second lead frames respectively formed at both sides of the second surface of the substrate, wherein the first lead frame and the second lead frame are spaced apart from each other by an isolation distance base.

Abstract: The present invention relates to an output driving circuit and a transistor output circuit. In accordance with an embodiment of the present invention, an output driving circuit including: a first driving circuit unit driven according to on operation of a first switch to supply high voltage power source to a gate of an output transistor; a second driving circuit unit driven by a one-shot pulse generated according to on operation of a second switch, which operates complementarily with the first switch, to discharge a gate-source capacitance of the output transistor; and an output driving voltage clamping unit disposed between a high voltage power source terminal and the gate of the output transistor in parallel with the first driving circuit unit to maintain a gate potential of the output transistor discharged according to the on operation of the second switch is provided.

Abstract: Disclosed herein are an output driving circuit and a transistor output circuit. The output driving circuit includes: a reference voltage generating unit generating a reference voltage; a level shift unit including a transistor latch and turning off a first transistor of a driving circuit or driving the first transistor; a driving circuit unit including the first transistor that is driven to apply power to a gate of an output transistor and a second transistor that is driven complementarily to the first transistor to lower a gate voltage of the output transistor and drive the output transistor; and an withstand voltage protecting unit that is driven by receiving a reference voltage and includes a first withstand voltage protecting unit for protecting transistors of the transistor latch and the first transistor for stable operations thereof and a second withstand voltage protecting unit for protecting the output transistor for a stable operation thereof.

Abstract: The present invention relates to a semiconductor circuit including: a delay unit for delaying an input signal by a predetermined time to output the delayed signal; a voltage adjusting unit for charging and discharging voltage according to a level of the input signal; and a combination unit for controlling the charging and discharging operations of the voltage adjusting unit according to signals generated using the level of the input signal and a level of the signal output from the delay unit, and it is possible to effectively remove low level noise and high level noise which are respectively mixed in a high level signal and a low level signal input to the semiconductor circuit.