Abstract: Solid state image sensor which can improve photic sensitivity of photodiodes by providing only one transmission line between the photodiodes, leading to reduction of width of the transmission line passing between the photodiodes, including a substrate, photodiodes formed on the substrate, a first to a fourth transmission gates arranged in sequence by four for every two photodiodes on a part of the substrate on one side of each of the photodiode, a first, and a second transmission lines arranged one by one alternatively extended at length on the substrate between adjacent photodiodes connected to the first, and the second transmission gates respectively for applying a first, and a second driving clock signals, respectively, a first contact formed at the third transmission gate, a second contact formed at the fourth transmission gate, and a third, and a fourth transmission lines formed over the transmission gates in parallel at length connected through the third, and the fourth transmission gates and the first,