Abstract: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.

Abstract: There is provided an insulated gate bipolar transistor, including: an active region including a gate electrode, a first emitter metal layer, a first well region, and one portion of a third well region; a termination region including a second well region supporting diffusion of a depletion layer; and a connection region located between the active region and the termination region and including a second emitter metal layer, a gate metal layer, and the other portion of the third well region, wherein the third well region is formed over the active region and the connection region, and the first emitter metal layer and the second emitter metal layer are formed on the third well region.

Abstract: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.

Abstract: Disclosed herein are a semiconductor device and a method for manufacturing the same, the semiconductor device including: trench gate electrodes formed in a semiconductor substrate; a gate insulating film covering an upper surface of the semiconductor substrate and lateral surfaces and lower surfaces of the trench gate electrodes; a base region formed between the trench gate electrodes; an emitter region formed between the trench gate electrodes and on the base region; interlayer insulating films formed on the trench gate electrodes and spaced apart from each other; an emitter metal layer formed on the interlayer insulating films and between the interlayer insulating films.

Abstract: Disclosed herein is a trench gate type power semiconductor device including: a semiconductor substrate; a drift layer formed on the semiconductor substrate; a well layer formed on the drift layer; trenches formed to arrive at the drift layer while penetrating through the well layer in a thickness direction; first insulating films formed from bottom surfaces of the trenches up to a predetermined height; first electrodes formed at a height lower than that of the first insulating films in the trenches; interlayer dielectrics formed up to the same height as that of the first insulating films in the trenches; and a second electrode formed on the well layer, a portion of the first surface corresponding to the trenches being protruded into the trenches to contact the interlayer dielectrics.

Abstract: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.

Abstract: Disclosed herein are a semiconductor device, and a method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate, a base region formed on an upper region of an inside of the semiconductor substrate, at least one gate electrode that penetrates through the base region and has an inverted triangular shape, a gate insulating film formed to enclose an upper portion of the semiconductor substrate and the gate electrode, an inter-layer insulating film formed on an upper portion of the gate electrode and the gate insulating film, an emitter region formed inside the base region and on both sides of the gate electrode, an emitter metal layer formed on an upper portion of the base region and inter-layer insulating film, and a buffer region formed to enclose a lower portion of the gate electrode and to be spaced apart from the base region.

Abstract: A liquid crystal display device with a built-in touch screen, which uses a common electrode as a touch-sensing electrode including an intersection of a gate line and a data line to define a pixel region, a gate metal disposed in a central portion of the pixel, an insulating layer formed on the gate metal, a first contact hole disposed through the insulating layer to expose a predetermined portion of an upper surface of the gate metal, a contact metal on the insulating layer and inside the first contact hole, the contact metal electrically connected with the gate metal, a first passivation layer on the contact metal, a second contact hole disposed through the first passivation layer to expose a predetermined portion of an upper surface of the contact metal, a common electrode on the first passivation layer and inside the second contact hole, a conductive line electrically connected with the common electrode, and a second passivation layer on the first passivation layer and the conductive line, wherein the gate

Abstract: N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy} benzamidine 2 ethansulfonic acid salt, a process for the preparation thereof, a pharmaceutical composition for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same, and an oral formulation for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same are described.

Abstract: The present invention relates to a pharmaceutical composition for preventing and treating osteoporosis, comprising N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, 4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, or salts thereof, and alendronic acid or a salt thereof. As a prophylactic or therapeutic composition for osteoporosis, the combination treatment of N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, 4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}-benzamidine, or salts thereof and alendronic acid or a salt thereof exhibits excellent inhibitory effect on osteoclast differentiation, as compared to each individual treatment, thereby being useful for the prevention or treatment of osteoporosis.

Abstract: A display device includes: a back light unit for emitting a light; a lower polarization plate on the back light unit; a liquid crystal display panel on the lower polarization plate for displaying an image; an upper polarization plate on the liquid crystal display panel; an optical film bonded to the upper polarization plate; and a transparent material on the optical film for improving hardness of the optical film.

Abstract: The present invention relates to a novel benzamidine derivative, a process for the preparation thereof, and a pharmaceutical composition comprising the same. The benzamidine derivative of the present invention effectively inhibits osteoclast differentiation at an extremely low concentration, and greatly increases the trabecular bone volume, and thus it can be advantageously used for the prevention and treatment of osteoporosis.

Abstract: The present invention relates to novel benzamidine derivatives, a process for the preparation thereof and a pharmaceutical composition for preventing or treating osteoporosis comprising the same. The benzamidine derivatives of the present invention effectively inhibit osteoclast differentiation at an extremely low concentration, and thus can be advantageously used for the prevention and treatment of osteoporosis.

Abstract: N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine 2 ethansulfonic acid salt, a process for the preparation thereof, a pharmaceutical composition for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same, and an oral formulation for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same are described.

Abstract: A display device includes: a back light unit for emitting a light; a lower polarization plate on the back light unit; a liquid crystal display panel on the lower polarization plate for displaying an image; an upper polarization plate on the liquid crystal display panel; an optical film bonded to the upper polarization plate; and a transparent material on the optical film for improving hardness of the optical film.

Abstract: The present invention relates to a pharmaceutical composition for preventing and treating osteoporosis, comprising N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, 4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, or salts thereof, and alendronic acid or a salt thereof. As a prophylactic or therapeutic composition for osteoporosis, the combination treatment of N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, 4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}-benzamidine, or salts thereof and alendronic acid or a salt thereof exhibits excellent inhibitory effect on osteoclast differentiation, as compared to each individual treatment, thereby being useful for the prevention or treatment of osteoporosis.

Abstract: This invention relates to an improved method of preparing N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine.

Abstract: The present invention relates to a novel benzamidine derivative, a process for the preparation thereof, and a pharmaceutical composition comprising the same. The benzamidine derivative of the present invention effectively inhibits osteoclast differentiation at an extremely low concentration, and greatly increases the trabecular bone volume, and thus it can be advantageously used for the prevention and treatment of osteoporosis.

Abstract: This invention relates to an improved method of preparing N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine.

Abstract: A method of forming a resist on a substrate and processing the resist in a resist processing system having a processing region and a non-processing region which are air-conditioned, the method comprising the steps of, transferring the substrate into the non-processing region, coating the resist on the substrate, exposing the coated resist, developing the exposed resist, subjecting the coated resist at least once, to heat treatment in a period from the transferring step to the developing step, detecting at least once, the concentration of an alkaline component which causes defective resolution of the resist in a processing atmosphere in a period from the transferring step to the developing step, setting a threshold value for the concentration of the alkaline component in the processing atmosphere which causes the defective resolution of the resist, and controlling and changing at least one processing atmosphere in the steps in accordance with a detected concentration of the alkaline component and the threshold