Patents by Inventor Jae Hoon Park

Jae Hoon Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140117407
    Abstract: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.
    Type: Application
    Filed: January 7, 2014
    Publication date: May 1, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: In Hyuk Song, Jae Hoon Park, Dong Soo Seo
  • Publication number: 20140061718
    Abstract: There is provided an insulated gate bipolar transistor, including: an active region including a gate electrode, a first emitter metal layer, a first well region, and one portion of a third well region; a termination region including a second well region supporting diffusion of a depletion layer; and a connection region located between the active region and the termination region and including a second emitter metal layer, a gate metal layer, and the other portion of the third well region, wherein the third well region is formed over the active region and the connection region, and the first emitter metal layer and the second emitter metal layer are formed on the third well region.
    Type: Application
    Filed: November 12, 2012
    Publication date: March 6, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: In Hyuk SONG, Jae Hoon PARK, Dong Soo SEO
  • Publication number: 20140061717
    Abstract: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.
    Type: Application
    Filed: November 29, 2012
    Publication date: March 6, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: In Hyuk Song, Jae Hoon Park, Dong Soo Seo
  • Publication number: 20140048845
    Abstract: Disclosed herein are a semiconductor device and a method for manufacturing the same, the semiconductor device including: trench gate electrodes formed in a semiconductor substrate; a gate insulating film covering an upper surface of the semiconductor substrate and lateral surfaces and lower surfaces of the trench gate electrodes; a base region formed between the trench gate electrodes; an emitter region formed between the trench gate electrodes and on the base region; interlayer insulating films formed on the trench gate electrodes and spaced apart from each other; an emitter metal layer formed on the interlayer insulating films and between the interlayer insulating films.
    Type: Application
    Filed: December 6, 2012
    Publication date: February 20, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Dong Soo Seo, In Hyuk Song, Jae Hoon Park
  • Publication number: 20140048844
    Abstract: Disclosed herein is a trench gate type power semiconductor device including: a semiconductor substrate; a drift layer formed on the semiconductor substrate; a well layer formed on the drift layer; trenches formed to arrive at the drift layer while penetrating through the well layer in a thickness direction; first insulating films formed from bottom surfaces of the trenches up to a predetermined height; first electrodes formed at a height lower than that of the first insulating films in the trenches; interlayer dielectrics formed up to the same height as that of the first insulating films in the trenches; and a second electrode formed on the well layer, a portion of the first surface corresponding to the trenches being protruded into the trenches to contact the interlayer dielectrics.
    Type: Application
    Filed: December 3, 2012
    Publication date: February 20, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: In Hyuk Song, Jae Hoon Park, Dong Soo Seo
  • Patent number: 8653628
    Abstract: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: February 18, 2014
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: In Hyuk Song, Jae Hoon Park, Dong Soo Seo
  • Publication number: 20140015003
    Abstract: Disclosed herein are a semiconductor device, and a method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate, a base region formed on an upper region of an inside of the semiconductor substrate, at least one gate electrode that penetrates through the base region and has an inverted triangular shape, a gate insulating film formed to enclose an upper portion of the semiconductor substrate and the gate electrode, an inter-layer insulating film formed on an upper portion of the gate electrode and the gate insulating film, an emitter region formed inside the base region and on both sides of the gate electrode, an emitter metal layer formed on an upper portion of the base region and inter-layer insulating film, and a buffer region formed to enclose a lower portion of the gate electrode and to be spaced apart from the base region.
    Type: Application
    Filed: February 6, 2013
    Publication date: January 16, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kwang Soo Koo, Bum Seok Suh, In Hyuk Song, Jae Hoon Park, Dong Soo Seo
  • Publication number: 20120068200
    Abstract: A liquid crystal display device with a built-in touch screen, which uses a common electrode as a touch-sensing electrode including an intersection of a gate line and a data line to define a pixel region, a gate metal disposed in a central portion of the pixel, an insulating layer formed on the gate metal, a first contact hole disposed through the insulating layer to expose a predetermined portion of an upper surface of the gate metal, a contact metal on the insulating layer and inside the first contact hole, the contact metal electrically connected with the gate metal, a first passivation layer on the contact metal, a second contact hole disposed through the first passivation layer to expose a predetermined portion of an upper surface of the contact metal, a common electrode on the first passivation layer and inside the second contact hole, a conductive line electrically connected with the common electrode, and a second passivation layer on the first passivation layer and the conductive line, wherein the gate
    Type: Application
    Filed: August 4, 2011
    Publication date: March 22, 2012
    Inventors: Kum Mi OH, Jae Hoon Park, Han Seok Lee, Hee Sun Shin, Won Keun Park
  • Patent number: 8039635
    Abstract: N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy} benzamidine 2 ethansulfonic acid salt, a process for the preparation thereof, a pharmaceutical composition for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same, and an oral formulation for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same are described.
    Type: Grant
    Filed: April 21, 2008
    Date of Patent: October 18, 2011
    Assignee: Dong Wha Pharmaceutical Co., Ltd.
    Inventors: Jin Soo Lee, Soon Ki Cho, Seoung Kyoo Sung, Young Goo Jin, Jae Hoon Park, Bo Kyung Kim, Ja Hyun Cha, Eun Hee Cho, Jei Man Ryu
  • Patent number: 7964584
    Abstract: The present invention relates to a pharmaceutical composition for preventing and treating osteoporosis, comprising N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, 4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, or salts thereof, and alendronic acid or a salt thereof. As a prophylactic or therapeutic composition for osteoporosis, the combination treatment of N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, 4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}-benzamidine, or salts thereof and alendronic acid or a salt thereof exhibits excellent inhibitory effect on osteoclast differentiation, as compared to each individual treatment, thereby being useful for the prevention or treatment of osteoporosis.
    Type: Grant
    Filed: July 31, 2009
    Date of Patent: June 21, 2011
    Assignee: Dong Wha Pharmaceutical Co., Ltd.
    Inventors: Jei Man Ryu, Jin Soo Lee, Jae Hoon Park, Yun-Ha Hwang, Duk Kyun Chung
  • Patent number: 7956959
    Abstract: A display device includes: a back light unit for emitting a light; a lower polarization plate on the back light unit; a liquid crystal display panel on the lower polarization plate for displaying an image; an upper polarization plate on the liquid crystal display panel; an optical film bonded to the upper polarization plate; and a transparent material on the optical film for improving hardness of the optical film.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: June 7, 2011
    Assignee: LG Display Co., Ltd.
    Inventors: Su Chang An, So Haeng Cho, Jae Hoon Park
  • Patent number: 7943646
    Abstract: The present invention relates to a novel benzamidine derivative, a process for the preparation thereof, and a pharmaceutical composition comprising the same. The benzamidine derivative of the present invention effectively inhibits osteoclast differentiation at an extremely low concentration, and greatly increases the trabecular bone volume, and thus it can be advantageously used for the prevention and treatment of osteoporosis.
    Type: Grant
    Filed: January 31, 2007
    Date of Patent: May 17, 2011
    Assignee: Dong Wha Pharmaceutical Co., Ltd.
    Inventors: Jei Man Ryu, Jin Soo Lee, Young Goo Jin, Ki Young Lee, Jae Hoon Park, Yun Ha Hwang, Sae Kwang Ku
  • Publication number: 20100249402
    Abstract: The present invention relates to novel benzamidine derivatives, a process for the preparation thereof and a pharmaceutical composition for preventing or treating osteoporosis comprising the same. The benzamidine derivatives of the present invention effectively inhibit osteoclast differentiation at an extremely low concentration, and thus can be advantageously used for the prevention and treatment of osteoporosis.
    Type: Application
    Filed: July 28, 2008
    Publication date: September 30, 2010
    Applicant: DONG WHA PHARMACEUTICAL CO. LTD.
    Inventors: Jei Man Ryu, Jin Soo Lee, Young Goo Jin, Jae Hoon Park, Bo Kyung Kim, Dae Yeon Won, Yun-Ha Hwang, Ki Yoon Kim, Sae Kwang Ku
  • Publication number: 20100113538
    Abstract: N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine 2 ethansulfonic acid salt, a process for the preparation thereof, a pharmaceutical composition for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same, and an oral formulation for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same are described.
    Type: Application
    Filed: April 21, 2008
    Publication date: May 6, 2010
    Applicant: DONG WHA PHARMACEUTICAL CO., LTD.
    Inventors: Jin Soo Lee, Soon Ki Cho, Seoung Kyoo Sung, Young Goo Jin, Jae Hoon Park, Bo Kyung Kim, Ja Hyun Cha, Eun Hee Cho, Jei Man Ryu
  • Publication number: 20100053524
    Abstract: A display device includes: a back light unit for emitting a light; a lower polarization plate on the back light unit; a liquid crystal display panel on the lower polarization plate for displaying an image; an upper polarization plate on the liquid crystal display panel; an optical film bonded to the upper polarization plate; and a transparent material on the optical film for improving hardness of the optical film.
    Type: Application
    Filed: December 18, 2008
    Publication date: March 4, 2010
    Inventors: Su Chang An, So Haeng Cho, Jae Hoon Park
  • Publication number: 20100029595
    Abstract: The present invention relates to a pharmaceutical composition for preventing and treating osteoporosis, comprising N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, 4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, or salts thereof, and alendronic acid or a salt thereof. As a prophylactic or therapeutic composition for osteoporosis, the combination treatment of N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine, 4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}-benzamidine, or salts thereof and alendronic acid or a salt thereof exhibits excellent inhibitory effect on osteoclast differentiation, as compared to each individual treatment, thereby being useful for the prevention or treatment of osteoporosis.
    Type: Application
    Filed: July 31, 2009
    Publication date: February 4, 2010
    Applicant: Dong Wha Pharm. Co., Ltd.
    Inventors: Jei Man RYU, Jin Soo LEE, Jae Hoon PARK, Yun-Ha HWANG, Duk Kyun CHUNG
  • Patent number: 7585979
    Abstract: This invention relates to an improved method of preparing N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine.
    Type: Grant
    Filed: July 5, 2005
    Date of Patent: September 8, 2009
    Assignee: Dong Wha Pharmaceutical Ind. Co., Ltd.
    Inventors: Jin Soo Lee, Seok Hoon Ahn, Young Goo Jin, Jae Hoon Park, Dong Hyuk Shin, Eun Hee Cho, Hwan Bong Chang, Young Ho Jung
  • Publication number: 20090054642
    Abstract: The present invention relates to a novel benzamidine derivative, a process for the preparation thereof, and a pharmaceutical composition comprising the same. The benzamidine derivative of the present invention effectively inhibits osteoclast differentiation at an extremely low concentration, and greatly increases the trabecular bone volume, and thus it can be advantageously used for the prevention and treatment of osteoporosis.
    Type: Application
    Filed: January 31, 2007
    Publication date: February 26, 2009
    Applicant: DONGWHA PHARMACEUTICAL IND. CO., LTD.
    Inventors: Jei Man Ryu, Jin Soo Lee, Young Goo Jin, Ki Young Lee, Jae Hoon Park, Yun Ha Hwang, Sae Kwang Ku
  • Publication number: 20080125596
    Abstract: This invention relates to an improved method of preparing N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine.
    Type: Application
    Filed: July 5, 2005
    Publication date: May 29, 2008
    Inventors: Jin Soo Lee, Seok Hoon Ahn, Young Goo Jin, Jae Hoon Park, Dong Hyuk Shin, Eun Hee Cho, Hwan Bong Chang, Young Ho Jung
  • Patent number: 6097469
    Abstract: A method of forming a resist on a substrate and processing the resist in a resist processing system having a processing region and a non-processing region which are air-conditioned, the method comprising the steps of, transferring the substrate into the non-processing region, coating the resist on the substrate, exposing the coated resist, developing the exposed resist, subjecting the coated resist at least once, to heat treatment in a period from the transferring step to the developing step, detecting at least once, the concentration of an alkaline component which causes defective resolution of the resist in a processing atmosphere in a period from the transferring step to the developing step, setting a threshold value for the concentration of the alkaline component in the processing atmosphere which causes the defective resolution of the resist, and controlling and changing at least one processing atmosphere in the steps in accordance with a detected concentration of the alkaline component and the threshold
    Type: Grant
    Filed: March 29, 1999
    Date of Patent: August 1, 2000
    Assignee: Tokyo Electron Limited
    Inventors: Hidetami Yaegashi, Yasunori Kawakami, Jae Hoon Park, Keiko Kanzawa, Takayuki Katano, Takayuki Toshima, Yuji Kakazu