Abstract: In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An ion implantation process is performed at an upper portion of the substrate exposed by the gate structure, so that an ion implantation region is formed to have an expanded volume. The ion implantation process uses ions that are identical to a material of the substrate.

Abstract: A semiconductor device includes an active region defined on a substrate, a gate electrode disposed on the active region and covering two adjacent corners of the active region, a drain area formed in the active region adjacent to a first side of the gate electrode, and a source area formed in the active region adjacent to a second side of the gate electrode. The first and second sides of the gate electrode are spaced apart from each other, and the first side has a bent shape.

Abstract: A semiconductor device is provided. A cell region is disposed in a substrate. The cell region includes a memory cell. A peripheral region is disposed in the substrate. The peripheral region is adjacent to the cell region. The peripheral region has a trench isolation, a first active region and a second active region. The trench isolation is interposed between the first active region and the second active region. A common gate pattern is disposed on the peripheral region. The common gate pattern extends in a first direction and partially overlaps the first active region, the second active region and the trench isolation. A buried conductive pattern is enclosed by the trench isolation. The buried conductive pattern extends in a second direction crossing the first direction. A top surface of the buried conductive pattern is lower than a bottom surface of the common gate pattern.

Abstract: An image forming apparatus to be placed on a desktop includes a first body, a second body which is pivotally mounted above the first body, a light emitting unit disposed in the second body, an image forming unit disposed in the first body so as to form a C-shaped paper feeding path, a first power supply unit and a second power supply unit disposed on a bottom surface of the first body, a controlling board disposed on a first side wall of the first body, and a power transmission unit disposed on a second side wall of the first body.

Abstract: The present invention relates to a process for preparing a water absorbent resin, particularly to a process for preparing a water absorbent resin which can resolve the uneven size of the fine pulverized gel-type resin and long pulverizing time those are the problems of prior process for preparing the water absorbent resin, by carrying out the pulverizing process of the gel-type resin divided into the coarse pulverizing process which is carried out with the internal cross-linking polymerization, and the fine pulverizing process. According to the preparation process, it is possible to mass-produce the water absorbent resin showing excellent absorption under pressure and low extractable content.

Abstract: An image forming apparatus to be placed on a desktop includes a first body, a second body which is pivotally mounted above the first body, a light emitting unit disposed in the second body, an image forming unit disposed in the first body so as to form a C-shaped paper feeding path, a first power supply unit and a second power supply unit disposed on a bottom surface of the first body, a controlling board disposed on a first side wall of the first body, and a power transmission unit disposed on a second side wall of the first body.

Abstract: An image forming apparatus including: a first body including a developing unit to perform an image forming operation on a print medium, and a second body provided above the first body to pivot between a closed position and an open position in relation to the first body, the second body including a light emitting unit, wherein the light emitting unit is directly above the developing unit when the second body is in the closed position, and the developing unit is exposed to an outside of the image forming apparatus when the second body is in the closed position. A user can place the image forming apparatus on a desktop, which increases convenience in using the apparatus. Additionally, a specialized image forming apparatus can be provided to a user who mainly wants to print and copy in small quantities.

Abstract: An image forming apparatus including: a first body including a developing unit to perform an image forming operation on a print medium, and a second body provided above the first body to pivot between a closed position and an open position in relation to the first body, the second body including a light emitting unit, wherein the light emitting unit is directly above the developing unit when the second body is in the closed position, and the developing unit is exposed to an outside of the image forming apparatus when the second body is in the closed position. A user can place the image forming apparatus on a desktop, which increases convenience in using the apparatus. Additionally, a specialized image forming apparatus can be provided to a user who mainly wants to print and copy in small quantities.

Abstract: The present invention relates to a process for preparing a water absorbent resin, particularly to a process for preparing a water absorbent resin which can resolve the uneven size of the fine pulverized gel-type resin and long pulverizing time those are the problems of prior process for preparing the water absorbent resin, by carrying out the pulverizing process of the gel-type resin divided into the coarse pulverizing process which is carried out with the internal cross-linking polymerization, and the fine pulverizing process. According to the preparation process, it is possible to mass-produce the water absorbent resin showing excellent absorption under pressure and low extractable content.

Abstract: A semiconductor device and method of forming the same are provided. The example semiconductor device may include a gate pattern including a gate electrode and a capping layer pattern on a semiconductor substrate, a spacer covering first and second sidewalls of the gate pattern, an impurity injection region formed in the semiconductor substrate adjacent to the gate pattern and an etch stopping layer covering a surface of the semiconductor substrate adjacent to the spacer, the etch stopping layer substantially not covering the first and second sidewalls of the spacer and an upper surface of the capping layer pattern.

Abstract: A semiconductor device includes an active region defined in a substrate, the active region having a trench extending below a surface of the substrate; an impurity region provided along a bottom surface and a lower sidewall of the trench, wherein an upper portion of the impurity region is spaced apart from the surface of the substrate and an upper portion of the trench; a gate insulating layer provided along an inner surface of the trench; and a gate electrode provided in the trench.

Abstract: A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region formed with the first dopant doping a second side of the channel region. The drain and source regions are doped asymmetrically such that a first charge carrier profile between the channel and drain regions has a steeper slope than a second charge carrier profile between the channel and source regions.

Abstract: An image forming apparatus including: a first body including a developing unit to perform an image forming operation on a print medium, and a second body provided above the first body to pivot between a closed position and an open position in relation to the first body, the second body including a light emitting unit, wherein the light emitting unit is directly above the developing unit when the second body is in the closed position, and the developing unit is exposed to an outside of the image forming apparatus when the second body is in the closed position. A user can place the image forming apparatus on a desktop, which increases convenience in using the apparatus. Additionally, a specialized image forming apparatus can be provided to a user who mainly wants to print and copy in small quantities.

Abstract: An image forming apparatus to be placed on a desktop includes a first body, a second body which is pivotally mounted above the first body, a light emitting unit disposed in the second body, an image forming unit disposed in the first body so as to form a C-shaped paper feeding path, a first power supply unit and a second power supply unit disposed on a bottom surface of the first body, a controlling board disposed on a first side wall of the first body, and a power transmission unit disposed on a second side wall of the first body.

Abstract: A semiconductor device and method of forming the same are provided. The example semiconductor device may include a gate pattern including a gate electrode and a capping layer pattern on a semiconductor substrate, a spacer covering first and second sidewalls of the gate pattern, an impurity injection region formed in the semiconductor substrate adjacent to the gate pattern and an etch stopping layer covering a surface of the semiconductor substrate adjacent to the spacer, the etch stopping layer substantially not covering the first and second sidewalls of the spacer and an upper surface of the capping layer pattern.

Abstract: A semiconductor device having a fuse and a method of fabricating the same are provided. An embodiment of he semiconductor device includes a fuse pattern having a fuse conductive pattern disposed on a semiconductor substrate and a fuse capping pattern disposed on the fuse conductive pattern. An upper insulating layer is formed to cover the semiconductor substrate having the fuse pattern. A fuse window exposing the fuse pattern through the upper insulating layer is formed. A fuse spacer and a fuse window spacer are disposed on sidewalls of the fuse pattern exposed by the fuse window and sidewalls of the fuse window, respectively.

Abstract: A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region formed with the first dopant doping a second side of the channel region. The drain and source regions are doped asymmetrically such that a first charge carrier profile between the channel and drain regions has a steeper slope than a second charge carrier profile between the channel and source regions.

Abstract: A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region formed with the first dopant doping a second side of the channel region. The drain and source regions are doped asymmetrically such that a first charge carrier profile between the channel and drain regions has a steeper slope than a second charge carrier profile between the channel and source regions.

Abstract: To form a bottom electrode of a capacitor of a semiconductor device, a first insulation layer pattern having a first contact hole is formed on a substrate, and a contact plug for the bottom electrode is formed in the contact hole. A second insulation layer is formed on the first insulation layer pattern and the contact plug. The second insulation layer has a second etching rate higher than a first etching rate of the first insulation layer pattern. The second insulation layer is etched to form a second insulation layer pattern having a second a contact hole exposing the contact plug. A conductive film is formed on the sidewall and the bottom face of the second contact hole. According to the difference between the first etching rate and the second etching rate, the etching of the first insulation layer pattern near the contact plug is reduced.

Abstract: The paper transferring mechanism includes a drive gear coaxially coupled with a rotation shaft of a motor, a pick-up gear coupled with a shaft of a pick-up roller to separately feed the paper sheets, and a feed gear coupled with a shaft of a feed roller to outwardly transfer the paper sheets. The paper transferring mechanism also includes a discharge gear coupled with a shaft of a discharge roller to outwardly discharge the paper sheets, and a swing gear having one end connected to the drive gear and the other end selectively connected to one of the pick-up gear and the feed gear. The pick-up gear is rotated when the motor is rotated in a first direction, the feed gear is rotated when the motor is rotated in a second direction, and the discharge gear is rotated constantly in one direction regardless of the rotation direction of the motor.