Abstract: A display substrate includes a gate line extending in a first direction, a floating electrode disposed on the same layer as the gate line, and a data line. Opposite ends of the floating electrode are electrically connected with the data line. The floating electrode extends in a second direction that crosses the first direction. The data line includes a recess disposed adjacent to the gate line. The data line overlaps with the floating electrode and also extends in the second direction.

Abstract: A fuel filter for a vehicle may include an upper case with a fuel inlet at a first side; a main filter disposed in the upper case to filter fuel flowing between an inner surface of the upper case and an external diameter of the main filter; a lower case provided in a structure having a fuel outlet and joined with a second side of the upper case; a first auxiliary filter assembly installed between the upper case and the main filter to secondarily filter the fuel; and a second auxiliary filter assembly installed between the main filter and the lower case to secondarily filter the fuel.

Abstract: A fuel filter for a vehicle may include an upper case with a fuel inlet at a first side; a lower case provided in a structure having a fuel outlet and bonded to a second side of the upper case; and a main filter disposed in an inner space by bonding the upper case and the lower case and filtering fuel, wherein a first auxiliary filter assembly filtering the fuel toward an inner diameter of the main filter is mounted on a first surface of the main filter and a second auxiliary filter assembly filtering the fuel toward a second surface of the main filter is mounted on the second surface of the main filter.

Abstract: Provided are a semiconductor device and a semiconductor package. The semiconductor device includes semiconductor device includes a semiconductor substrate having a first side and a second side. A front-side structure including an internal circuit is disposed on the first side of the semiconductor substrate. A passivation layer is disposed on the second side of the semiconductor substrate. A through-via structure passes through the semiconductor substrate and the passivation layer. A back-side conductive pattern is disposed on the second side of the semiconductor substrate. The back-side conductive pattern is electrically connected to the through-via structure. An alignment recessed area is disposed in the passivation layer. An insulating alignment pattern is disposed in the alignment recessed area.

Abstract: A wafer-to-wafer bonding structure may include: a first wafer including a first insulating layer on a first substrate and on a first copper (Cu) pad that penetrates the first insulating layer and has portions protruding from an upper surface of the first insulating layer, and a first barrier metal layer on a lower surface and sides of the first Cu pad; a second wafer including a second insulating layer on a second substrate and on a second copper (Cu) pad that penetrates the second insulating layer, has portions protruding from an upper surface of the second insulating layer, and is bonded to the first Cu pad, and a second barrier metal layer on a lower surface and sides of the second Cu pad; and a polymer layer covering protruding sides of the first and second barrier metal layers and disposed between the first and second wafers.

Abstract: An integrated circuit device is provided. The integrated circuit device includes: a capacitor including an electrode formed in a first area on a substrate; a through-silicon-via (TSV) landing pad formed in a second area on the substrate, the TSV landing pad including the same material as the electrode; a multi-layered interconnection structure formed on the capacitor and the TSV landing pad; and a TSV structure passing through the substrate, the TSV structure being connected to the multi-layered interconnection structure through the TSV landing pad.

Abstract: Semiconductor devices having through-electrodes are provided. The semiconductor devices may include a substrate, a through-electrode penetrating vertically through the substrate, a circuit layer on the substrate and metal lines in the circuit layer. The metal lines may include two first metals on opposing edges of a top surface of the through-electrode and second metals above the top surface of the through-electrode. At least some of the second metals may not vertically overlap the two first metals.

Abstract: Integrated circuit devices are provided. The integrated circuit devices may include a via structure including a conductive plug, a conductive barrier layer spaced apart from the conductive plug, and an insulating layer between the conductive plug and conductive barrier layer. Related methods of forming integrated circuit devices are also provided.

Abstract: A display panel includes a first display substrate, a second display substrate facing the first display substrate and being coupled to the first display substrate, a liquid crystal layer interposed between the first display substrate and the second display substrate, an alignment layer disposed in a display area of at least one of the first and second display substrates, and a partition wall disposed in a peripheral area surrounding the display area of the first or second display substrate. The partition wall includes a body and a capping layer that covers an upper surface of the body. A width of the upper surface of the body is smaller than a width of the capping layer disposed on the body.

Abstract: Disclosed is a liquid crystal display including: a first substrate; a gate line disposed on the first substrate; a data line disposed on the gate line; and a thin film transistor connected to the gate line and the data line. A plurality of color filters is disposed on the thin film transistor and the data line. A capping layer is disposed on the plurality of color filters. A shielding electrode is disposed on the capping layer. An insulating layer is disposed on the capping layer and includes a first opening extending to a part of the shielding electrode. A light blocking member is disposed on the insulating layer and the shielding electrode. The shielding electrode is disposed in a part corresponding to the data line. Adjacent color filters among the plurality of color filters overlap with each other in the part corresponding to the data line. The first opening is disposed in a part corresponding to the region where the adjacent color filters overlap with each other.

Abstract: A liquid crystal display includes: a first insulation substrate; a gate line disposed on the first insulation substrate; a first data line and a second data line disposed on the first insulation substrate; a color filter disposed on the first insulation substrate and disposed between the first data line and the second data line; a first light blocking member disposed on the first data line and the second data line; and a second light blocking member disposed on the color filter and the first light blocking member, extending in the same direction as the gate line, and overlapping the first light blocking member on the first data line and the second data line.

Abstract: A display device includes gate lines, data lines, first wires and second wires extending in the directions of the gate lines and data lines, and pixels having a first subpixel and a second subpixel each. The first subpixel has a first subpixel electrode and a first switching element, and the second subpixel has a second subpixel electrode and second and third switching elements. The control terminals of the three switching elements are connected to the same gate line, and the input terminals of the first and second switching elements are connected to the same data line. The first and second switching elements have output terminals connected to the first and second subpixel electrodes, respectively. The second switching element's output terminal connects to the third switching element, which has an output terminal connected to a second wire. The first wires and the second wires are connected in a pixel.

Abstract: A semiconductor integrated circuit device includes a TSV (Through Silicon Via) extending through a substrate, a first well in the substrate adjacent a first surface of the substrate, a gate of an active device on the first well, a charging protection well, and a charging protection gate on the charging protection well. The charging protection well is disposed in the substrate adjacent the first surface of the substrate, is interposed between the TSV hole and the first well, and surrounds the TSV hole. The charging protection gate prevents the gate of the active device from being damaged when the TSV is formed especially when using a plasma etch process to form a TSV hole in the substrate.

Abstract: A wafer-to-wafer bonding structure may include: a first wafer including a first insulating layer on a first substrate and on a first copper (Cu) pad that penetrates the first insulating layer and has portions protruding from an upper surface of the first insulating layer, and a first barrier metal layer on a lower surface and sides of the first Cu pad; a second wafer including a second insulating layer on a second substrate and on a second copper (Cu) pad that penetrates the second insulating layer, has portions protruding from an upper surface of the second insulating layer, and is bonded to the first Cu pad, and a second barrier metal layer on a lower surface and sides of the second Cu pad; and a polymer layer covering protruding sides of the first and second barrier metal layers and disposed between the first and second wafers.

Abstract: A display substrate includes a gate line extending in a first direction, a floating electrode disposed on the same layer as the gate line, and a data line. Opposite ends of the floating electrode are electrically connected with the data line. The floating electrode extends in a second direction that crosses the first direction. The data line includes a recess disposed adjacent to the gate line. The data line overlaps with the floating electrode and also extends in the second direction.

Abstract: Integrated circuit (IC) devices are provided including: a first multi-layer wiring structure including a plurality of first wiring layers in a first region of a substrate at different levels and spaced apart from one another, and a plurality of first contact plugs between the plurality of first wiring layers and connected to the plurality of first wiring layers; a through-silicon via (TSV) landing pad including a first pad layer in a second region of the substrate at a same level as that of at least one first wiring layer from among the plurality of first wiring layers, and a second pad layer at a same level as that of at least one first contact plug from among the plurality of first contact plugs and contacts the first pad layer; a second multi-layer wiring structure on the TSV landing pad; and a TSV structure that passes through the substrate and is connected to the second multi-layer wiring structure through the TSV landing pad.

Abstract: A display device includes a display area and a non-display area, a first alignment layer disposed on a first substrate, a second alignment layer disposed on a second substrate, a liquid crystal layer disposed between the first alignment layer and the second alignment layer; and a groove disposed in the non-display area of the second substrate to correspond to at least a portion of an end portion of the second alignment layer. The groove is provided along at least one side of the display area and is configured to be filled by an alignment solution used to from the second alignment layer and prevent the alignment solution from dispersing to other areas of the second substrate.

Abstract: A liquid crystal display includes: a first insulation substrate; a gate line disposed on the first insulation substrate; a first data line and a second data line disposed on the first insulation substrate; a color filter disposed on the first insulation substrate and disposed between the first data line and the second data line; a first light blocking member disposed on the first data line and the second data line; and a second light blocking member disposed on the color filter and the first light blocking member, extending in the same direction as the gate line, and overlapping the first light blocking member on the first data line and the second data line.

Abstract: A semiconductor device includes a gate trench across an active region of a semiconductor substrate, a gate structure filling the gate trench, and source/drain regions formed in the active region at respective sides of the gate structure. The gate structure includes a sequentially stacked gate electrode and insulating capping pattern, and a gate dielectric layer between the gate electrode and the active region. The gate electrode is located at a lower level than an upper surface of the active region and includes a barrier conductive pattern and a gate conductive pattern. The gate conductive pattern includes a first part having a first width and a second part having a second width greater than the first width. The barrier conductive pattern is interposed between the first part of the gate conductive pattern and the gate dielectric layer.

Abstract: A liquid crystal display device may include a substrate. The liquid crystal display device may further include a pixel electrode disposed on the substrate. The liquid crystal display device may further include a common electrode overlapping the pixel electrode, wherein a liquid crystal injection hole is formed through at least the common electrode. The liquid crystal display device may further include a liquid crystal layer disposed between the pixel electrode and the common electrode. The liquid crystal display device may further include a light-blocking element disposed inside the liquid crystal injection hole.