Abstract: A display device includes gate lines, data lines, first wires and second wires extending in the directions of the gate lines and data lines, and pixels having a first subpixel and a second subpixel each. The first subpixel has a first subpixel electrode and a first switching element, and the second subpixel has a second subpixel electrode and second and third switching elements. The control terminals of the three switching elements are connected to the same gate line, and the input terminals of the first and second switching elements are connected to the same data line. The first and second switching elements have output terminals connected to the first and second subpixel electrodes, respectively. The second switching element's output terminal connects to the third switching element, which has an output terminal connected to a second wire. The first wires and the second wires are connected in a pixel.

Abstract: A display apparatus includes a base substrate, an array of pixel electrodes formed over the base substrate, an array of active cavities disposed over the array of pixel electrodes, at least one common electrode opposing the array of pixel electrodes such that the array of active cavities are disposed between the at least one common electrode and the array of pixel electrodes. The apparatus further includes a metal line electrically connected with the at least one common electrode in the display area.

Abstract: Provided is an integrated circuit device including a through-silicon-via (TSV) structure and a method of manufacturing the integrated circuit device. The integrated circuit device includes a semiconductor structure including a substrate and an interlayer insulating film, a TSV structure passing through the substrate and the interlayer insulating film, a via insulating film substantially surrounding the TSV structure, and an insulating spacer disposed between the interlayer insulating film and the via insulating film.

Abstract: An integrated circuit device is provided which includes a through-silicon via (TSV) structure and one or more decoupling capacitors, along with a method of manufacturing the same. The integrated circuit device may include a semiconductor structure including a semiconductor substrate, a TSV structure passing through the semiconductor substrate, and a decoupling capacitor formed in the semiconductor substrate and connected to the TSV structure. The TSV structure and the one or more decoupling capacitors may be substantially simultaneously formed. A plurality of decoupling capacitors may be disposed within a keep out zone (KOZ) of the TSV structure. The plurality of decoupling capacitors may have the same or different widths and/or depths. An isopotential conductive layer may be formed to reduce or eliminate a potential difference between different parts of the TSV structure.

Abstract: A semiconductor device includes: a semiconductor substrate having a trench therein, a metal-containing barrier layer extending along an inner wall of the trench and defining a wiring space in the trench, the wiring space having a first width along a first direction, and a metal-containing conductive line on the metal-containing barrier layer in the wiring space, and including at least one metal grain having a particle diameter of about the first width along the first direction.

Abstract: A display device includes a display area and a non-display area, a first alignment layer disposed on a first substrate, a second alignment layer disposed on a second substrate, a liquid crystal layer disposed between the first alignment layer and the second alignment layer; and a groove disposed in the non-display area of the second substrate to correspond to at least a portion of an end portion of the second alignment layer. The groove is provided along at least one side of the display area and is configured to be filled by an alignment solution used to from the second alignment layer and prevent the alignment solution from dispersing to other areas of the second substrate.

Abstract: A display device including a base substrate, a pixel disposed on the base substrate, and a color filter part disposed between the base substrate and the pixel. The color filter part includes a color filter corresponding to the pixel and a black matrix disposed at at least a side of the color filter. The pixel includes a cover layer defining a tunnel-shaped cavity on the base substrate, an image display part disposed in the tunnel-shaped cavity, and first and second pixel electrodes and a common electrode applying an electric field to the image display part. The tunnel-shaped cavity is formed by forming a sacrificial layer and wet-etching the sacrificial layer.

Abstract: A semiconductor device includes a gate trench across an active region of a semiconductor substrate, a gate structure filling the gate trench, and source/drain regions formed in the active region at respective sides of the gate structure. The gate structure includes a sequentially stacked gate electrode and insulating capping pattern, and a gate dielectric layer between the gate electrode and the active region. The gate electrode is located at a lower level than an upper surface of the active region and includes a barrier conductive pattern and a gate conductive pattern. The gate conductive pattern includes a first part having a first width and a second part having a second width greater than the first width. The barrier conductive pattern is interposed between the first part of the gate conductive pattern and the gate dielectric layer.

Abstract: A liquid crystal display includes an insulation substrate, a pixel electrode, a microcavity layer, a common electrode, and a layer. The pixel electrode is disposed on the substrate. The microcavity layer is disposed on the pixel electrode and includes a plurality of microcavities including liquid crystal molecules disposed therein. The common electrode is disposed on the microcavity layer. The layer is disposed on the common electrode and includes an organic material. The layer comprises a refractive index of more than 1.6 and less than 2.0.

Abstract: A liquid crystal display device may include a substrate. The liquid crystal display device may further include a pixel electrode disposed on the substrate. The liquid crystal display device may further include a common electrode overlapping the pixel electrode, wherein a liquid crystal injection hole is formed through at least the common electrode. The liquid crystal display device may further include a liquid crystal layer disposed between the pixel electrode and the common electrode. The liquid crystal display device may further include a light-blocking element disposed inside the liquid crystal injection hole.

Abstract: A display device including a base substrate, a pixel disposed on the base substrate, and a color filter part disposed between the base substrate and the pixel. The color filter part includes a color filter corresponding to the pixel and a black matrix disposed at at least a side of the color filter. The pixel includes a cover layer defining a tunnel-shaped cavity on the base substrate, an image display part disposed in the tunnel-shaped cavity, and first and second pixel electrodes and a common electrode applying an electric field to the image display part. The tunnel-shaped cavity is formed by forming a sacrificial layer and wet-etching the sacrificial layer.

Abstract: A liquid crystal display includes: a first insulation substrate; a gate line disposed on the first insulation substrate; a first data line and a second data line disposed on the first insulation substrate; a color filter disposed on the first insulation substrate and disposed between the first data line and the second data line; a first light blocking member disposed on the first data line and the second data line; and a second light blocking member disposed on the color filter and the first light blocking member, extending in the same direction as the gate line, and overlapping the first light blocking member on the first data line and the second data line.

Abstract: Integrated circuit devices are provided. The integrated circuit devices may include a via structure including a conductive plug, a conductive barrier layer spaced apart from the conductive plug, and an insulating layer between the conductive plug and conductive barrier layer. Related methods of forming integrated circuit devices are also provided.

Abstract: A display apparatus includes a substrate and a plurality of pixels disposed on the substrate. Each pixel includes a gate electrode disposed on the substrate, a gate dielectric layer disposed on the substrate and the gate electrode, an oxide semiconductor pattern disposed on the gate dielectric layer, a first insulating pattern disposed on the oxide semiconductor pattern that overlaps the gate electrode, a second insulating pattern disposed on the oxide semiconductor pattern and spaced apart from the first insulating pattern, source and drain electrodes spaced apart from each other on the oxide semiconductor pattern, a pixel electrode pattern disposed on the second insulating pattern to make contact with the source electrode, and a channel area defined where the oxide semiconductor pattern overlaps the gate electrode. A high carrier mobility channel is formed in the channel area when a turn-on voltage is applied to the gate electrode.

Abstract: Provided are a display substrate, a liquid crystal display (LCD) including the display substrate, and a method of manufacturing the display substrate. The display substrate includes: an insulating substrate; a gate wiring formed on the insulating substrate and extending generally in a first direction; a data wiring which is insulated from the gate wiring, intersects the gate wiring, and which extends generally in a second direction; a pixel electrode formed in a pixel region defined by the gate wiring and the data wiring; and a storage wiring which is formed on the same layer as the gate wiring, is overlapped by the data wiring to be insulated from the data wiring, and which extends generally in the second direction, wherein each of the gate wiring and the storage wiring has a tapered surface oriented generally at an inclination angle of approximately 30 degrees or less with respect to the insulating substrate.

Abstract: A display substrate includes a base substrate, a thin-film transistor (TFT), a color filter and a pixel electrode. The TFT is on the base substrate. The color filter is on the base substrate including the TFT and in contact with the base substrate. The pixel electrode is on the color filter and in electrical connection to a drain electrode of the TFT.

Abstract: A transparent display apparatus includes a display panel including a plurality of pixels arranged in rows and columns, a plurality of gate lines, a plurality of data lines including first and second data lines, a gate driver, and a data driver. Each of the pixels comprises sub-pixels arranged in a row direction, each gate line is operatively coupled to sub-pixels arranged in a corresponding row, and each first and second data line is operatively coupled to sub-pixels arranged in a corresponding column. The gate driver sequentially applies a gate signal to the pixels through the gate lines. The data driver applies sub-data signals to the sub-pixels through the first data lines, and applies down data signals to the sub-pixels through the second data lines. Each of the down data signals has a voltage level lower than a voltage level of a corresponding sub-data signal.

Abstract: A method of fabricating a semiconductor device can include forming a trench in a semiconductor substrate, forming a first conductive layer on a bottom surface and side surfaces of the trench, and selectively forming a second conductive layer on the first conductive layer to be buried in the trench. The second conductive layer may be formed selectively on the first conductive layer by using an electroless plating method or using a metal organic chemical vapor deposition (MOCVD) or an atomic layer deposition (ALD) method.

Abstract: A display device includes gate lines, data lines, first wires and second wires extending in the directions of the gate lines and data lines, and pixels having a first subpixel and a second subpixel each. The first subpixel has a first subpixel electrode and a first switching element, and the second subpixel has a second subpixel electrode and second and third switching elements. The control terminals of the three switching elements are connected to the same gate line, and the input terminals of the first and second switching elements are connected to the same data line. The first and second switching elements have output terminals connected to the first and second subpixel electrodes, respectively. The second switching element's output terminal connects to the third switching element, which has an output terminal connected to a second wire. The first wires and the second wires are connected in a pixel.

Abstract: A liquid crystal display includes a first substrate including pixels arranged in m columns by n rows, n data lines disposed, m gate lines arranged substantially parallel to the data lines, n data distribution lines arranged to cross the m gate lines and electrically connected to the data lines, respectively, source driving chips disposed on a first portion of the first substrate, and a gate driver disposed on a second portion of the first substrate. Each of the data distribution lines is connected to a subset of the pixels arranged in a corresponding row, and each of the gate lines is connected to a subgroup of the pixels arranged in a corresponding column. The source driving chips apply data signals to the pixels through the first data lines and the data distribution lines, and the gate driver applies gate signals to the pixels through the gate lines.