Abstract: The present disclosure relates to semiconductor devices. One example semiconductor device comprises a substrate that includes a first active pattern, a first source/drain pattern, a second source/drain pattern, and a third source/drain pattern on the first active patter, a first separation structure between the first source/drain pattern and the second source/drain pattern, and a second separation structure between the second source/drain pattern and the third source/drain pattern. The first active pattern includes a first active portion that overlaps the first source/drain pattern, a second active portion that overlaps the second source/drain pattern, a third active portion that overlaps the third source/drain pattern, a first intervening portion between the first active portion and the second active portion, and a second intervening portion between the second active portion and the third active portion.

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate including first and second active regions wherein a boundary is provided between the first and second active regions, a device isolation layer on the substrate in a trench between the first and second active regions, a first channel pattern and a first source/drain pattern on the first active region, a second channel pattern and a second source/drain pattern on the second active region, a first gate electrode on the first channel pattern and extending across the first active regions, a second gate electrode on the second channel pattern and extending across the second active regions, and active contacts on the first and second source/drain patterns. The device isolation layer includes a protrusion structure between the first active regions. The protrusion structure is adjacent to the boundary.

Abstract: The invention relates to a polymerisable LC material comprising one or more di- or multireactive mesogenic compounds and one or more compounds of formula UVI, wherein the individual radicals have one of the meaning as given in the claims. Furthermore, the present invention relates also to a method for its preparation, a polymer film with improved thermal durability and UV stability obtainable from a corresponding polymerisable LC material, to a method of preparation of such polymer film, and to the use of such polymer film and said polymerisable LC material for optical, electro-optical, decorative or security devices.

Abstract: A polymerisable LC material containing one or more di- or multireactive mesogenic compounds, and one or more compounds of formula TRI, and one or more compounds of formula ND Furthermore, a method for preparing the polymerisable LC material, and a polymer film with improved thermal durability and UV stability obtainable from the polymerisable LC material, and a method of preparing such polymer film, and using such polymer film and the polymerisable LC material for optical, electro-optical, decorative or security devices.

Abstract: A polymerisable LC material comprising at least one di- or multireactive mesogenic compound and at least one compound of formula CO-1, wherein R1, R2, L1, L2, L3, and n have the meanings as given in claim 1. Furthermore, a method for preparation of the LC material, a polymer film with improved thermal durability obtainable from the corresponding polymerisable LC material, a method of preparation of such polymer film, and the use of such polymer film and said polymerisable LC material for optical, electro-optical, decorative or security devices.

Abstract: The present invention relates to a liquid-crystal medium which comprises one or more compounds each of formulae I and II in which the occurring groups and parameters have the meanings given in claim 1.

Abstract: The invention relates to a polymerisable LC material comprising one or more di- or multireactive mesogenic compounds and one or more compounds of formula UVI, wherein the individual radicals have one of the meaning as given in the claims. Furthermore, the present invention relates also to a method for its preparation, a polymer film with improved thermal durability and UV stability obtainable from a corresponding polymerisable LC material, to a method of preparation of such polymer film, and to the use of such polymer film and said polymerisable LC material for optical, electro-optical, decorative or security devices.

Abstract: The invention relates to a polymerisable LC material comprising one or more di- or multireactive mesogenic compounds and one or more compounds of formula TRI, wherein the individual radicals have one of the meaning as given in the claims. Furthermore, the present invention relates also to a method for its preparation, a polymer film with improved thermal durability and UV stability obtainable from the corresponding polymerisable LC material, to a method of preparation of such polymer film, and to the use of such polymer film and said polymerisable LC material for optical, electro-optical, decorative or security devices.

Abstract: The present invention relates to a liquid-crystal medium which comprises one or more compounds each of formulae I and II in which the occurring groups and parameters have the meanings given in claim 1.

Abstract: The invention relates to a polymerizable LC material comprising one or more di- or multireactive mesogenic compounds and one or more compounds of formula S0, S1 or S2, wherein the individual radicals have one of the meaning as given in the claims. Furthermore, the present invention relates also to a method for its preparation, a polymer film with improved thermal durability and UV stability obtainable from a corresponding polymerizable LC material, to a method of preparation of such polymer film, and to the use of such polymer film and said polymerizable LC material for optical, electro-optical, decorative or security devices.

Abstract: Methods of fabricating semiconductor devices are provided. A method of fabricating a semiconductor device includes selecting a target pattern from a target design layout. The target pattern includes: a target net; a target via that is electrically connected to the target net; and a crossing net that is electrically connected to the target via on a different level from the target net. The method includes analyzing a peripheral pattern that is adjacent the target net. Moreover, the method includes generating a redundant net, and a redundant via that electrically connects the redundant net and the crossing net. Related layout design systems are also provided.

Abstract: Methods of fabricating semiconductor devices are provided. A method of fabricating a semiconductor device includes selecting a target pattern from a target design layout. The target pattern includes: a target net; a target via that is electrically connected to the target net; and a crossing net that is electrically connected to the target via on a different level from the target net. The method includes analyzing a peripheral pattern that is adjacent the target net. Moreover, the method includes generating a redundant net, and a redundant via that electrically connects the redundant net and the crossing net. Related layout design systems are also provided.

Abstract: The invention relates to a polymerisable LC material comprising at least one di- or multireactive mesogenic compound and at least one compound of formula CO-1, wherein R1, R2, L1, L2, L3, and n have one of the meanings as given in claim 1. Furthermore, the present invention relates also to a method for its preparation, a polymer film with improved thermal durability obtainable from the corresponding polymerisable LC material, to a method of preparation of such polymer film, and to the use of such polymer film and said polymerisable LC material for optical, electro-optical, decorative or security devices.

Abstract: The present invention relates to a liquid crystalline medium which comprises one or more mesogenic compounds selected from the group of compounds of formulae I and II as set forth in claim 1, one or more chiral compounds and one or more polymerisable compounds, to a composite system obtained from or respectively obtainable from the medium by polymerising the one or more polymerisable compounds, and to liquid crystal displays comprising the composite system, in particular displays operating in reflective mode. The present invention further relates to a process for preparing the composite system comprising spatially selective polymerisation.

Abstract: Disclosed herein is a digital-to-analog converter (DAC) including a clock driver for controlling a clock signal to provide an inverse delay clock signal to allow at least selective adjustment of a return to zero (RZ) section; and a DAC core comprising at least two DAC units for receiving a digital input value, the clock signal and the inverse delay clock signal and providing an analog output value. According to the present invention, distortion of the output of the DAC may be attenuated and loss of the output may be minimized by utilizing the RZ technique.

Abstract: Disclosed herein is a digital-to-analog converter (DAC) including a clock driver for controlling a clock signal to provide an inverse delay clock signal to allow at least selective adjustment of a return to zero (RZ) section; and a DAC core comprising at least two DAC units for receiving a digital input value, the clock signal and the inverse delay clock signal and providing an analog output value. According to the present invention, distortion of the output of the DAC may be attenuated and loss of the output may be minimized by utilizing the RZ technique.

Abstract: A digital photographing apparatus is provided that enlarges and displays one area of a subject to be photographed for a self-timer photographing standby time, as is a method of controlling the digital photographing apparatus. The method includes: receiving a self-timer photographing input signal; enlarging and displaying one area of a displayed input image for a self-timer photographing standby time; and capturing the displayed input image after the self-timer photographing standby time elapses. The area of the subject to be photographed is enlarged and displayed for the self-timer photographing standby time so that a photographing state of the subject to be photographed may be checked and a desired image may be captured.

Abstract: A digital photographing apparatus is provided that enlarges and displays one area of a subject to be photographed for a self-timer photographing standby time, as is a method of controlling the digital photographing apparatus. The method includes: receiving a self-timer photographing input signal; enlarging and displaying one area of a displayed input image for a self-timer photographing standby time; and capturing the displayed input image after the self-timer photographing standby time elapses. The area of the subject to be photographed is enlarged and displayed for the self-timer photographing standby time so that a photographing state of the subject to be photographed may be checked and a desired image may be captured.

Abstract: A mask for forming a metal line and a via contact, and a method for fabricating a semiconductor device using the same, minimizes misalignment. The mask includes a first mask region having a dark tone for light shading, a second mask region having a half tone, being disposed within the first mask region to form the metal line, and a third mask region having a clear tone, being disposed within the second mask region to form the via contact.

Abstract: Provided is an image sensor. The image sensor includes a semiconductor substrate, an interlayer dielectric, metal interconnections, a first electrode, a lower electrode, a second electrode, and a photodiode. The semiconductor substrate has at least one transistor thereon. The interlayer dielectric is on the semiconductor substrate. The metal interconnections pass through the interlayer dielectric. The first electrode is in the interlayer dielectric between the metal interconnections. The lower electrode is on the interlayer dielectric to connect to the metal interconnection. The second electrode is on the interlayer dielectric at a position corresponding to the first electrode, and a gap region is between the second electrode and the lower electrode. The photodiode is on the interlayer dielectric with the lower electrode and the second electrode.