Abstract: Embodiments relate to a phase shift mask and a method for manufacturing the same. According to embodiments, a phase shift mask may include a substrate, a phase shift layer disposed on and/or over an area of the substrate corresponding to a pattern to be exposed, and a dummy phase shift layer disposed on and/or over an area of the substrate where a phase shift layer may not be formed. According to embodiments, a side lobe phenomenon may be minimized.

Abstract: Provided is an image sensor. The image sensor includes a semiconductor substrate, an interlayer dielectric, metal interconnections, a first electrode, a lower electrode, a second electrode, and a photodiode. The semiconductor substrate has at least one transistor thereon. The interlayer dielectric is on the semiconductor substrate. The metal interconnections pass through the interlayer dielectric. The first electrode is in the interlayer dielectric between the metal interconnections. The lower electrode is on the interlayer dielectric to connect to the metal interconnection. The second electrode is on the interlayer dielectric at a position corresponding to the first electrode, and a gap region is between the second electrode and the lower electrode. The photodiode is on the interlayer dielectric with the lower electrode and the second electrode.

Abstract: An image sensor and method for manufacturing the same are provided. According to an embodiment, the image sensor includes a photodiode on a semiconductor substrate according to unit pixels; an insulating layer arranged on the semiconductor substrate; and an inter metal dielectric (IMD) including metal wirings arranged on the insulating layer. A trench is provided through the IMD in a region corresponding to the photodiode for each unit pixel; and a color filter is arranged filling the trench. The color filter can function as a wave guide to improve the photosensitivity of the image sensor.

Abstract: Disclosed is a method for fabricating a photoresist pattern. The method includes coating photoresist on an etch target layer, forming an initial photoresist pattern through an exposure process using a mask, and growing the initial photoresist pattern to form a final photoresist pattern by using an application of a photoresist material including a reactive organic material.

Abstract: There is provided a photo mask for forming a specific pattern and a specific pattern formed using the photo mask. Unlike in a related method of forming a specific pattern using a photo mask including cell lines and pad lines, the photo mask is manufactured with cell lines and pad lines, the pad lines each including at least one space line. The photoresist layer is exposed and developed using the photomask to form the photoresist pattern. The etched layer is etched in accordance with the photoresist pattern to form the specific pattern. Therefore, it is possible to improve the pattern uniformity of the semiconductor device and thus to improve yield.

Abstract: A one cylinder storage device and a method for fabricating a capacitor are disclosed, realizing simplified fabrication by overexposure with a mask having a plurality of holes, in which the method includes forming a contact hole in an insulating layer on a semiconductor substrate; forming a conductive layer on the insulating layer to fill the contact hole; forming a photoresist layer on the conductive layer; forming a photoresist layer pattern by overexposure and generating a side lobe phenomenon; forming a cylindrical lower electrode by patterning the conductive layer using the photoresist layer pattern as a mask; and forming a dielectric layer and an upper electrode covering the lower electrode.

Abstract: A method for manufacturing a semiconductor device effectively removes a solvent of a bottom antireflective coating film is using a porous material so as to prevent acid in a photoresist film from reacting with the solvent during a post exposure baking (PEB) process. The method includes forming a pattern formation layer on a wafer, forming a bottom antireflective coating film containing a solvent, on the pattern formation layer, arranging a porous material layer in contact with the bottom antireflective coating film, absorbing the solvent contained in the bottom antireflective coating film using the porous material layer, forming photoresist film patterns on predetermined portions of the bottom antireflective coating film, etching the bottom antireflective coating film using the photoresist film patterns as masks, and etching the pattern formation layer using the photoresist film patterns as masks to form patterns.

Abstract: A one cylinder storage device and a method for fabricating a capacitor are disclosed, realizing simplified fabrication by overexposure with a mask having a plurality of holes, in which the method includes forming a contact hole in an insulating layer on a semiconductor substrate; forming a conductive layer on the insulating layer to fill the contact hole; forming a photoresist layer on the conductive layer; forming a photoresist layer pattern by overexposure and generating a side lobe phenomenon; forming a cylindrical lower electrode by patterning the conductive layer using the photoresist layer pattern as a mask; and forming a dielectric layer and an upper electrode covering the lower electrode.

Abstract: The present invention relates to a chemically amplified polymer having a pendent group with dicyclohexyl bonded thereto, a process for the preparation thereof, and a resist composition comprising it, and more particularly, to a novel (meth)acrylic or norbornene carboxylate compound with dicyclohexyl bonded thereto, a process for the preparation thereof, a chemically amplified polymer synthesized therewith, and a positive photoresist composition for ArF comprising said polymer, with high resolution and excellent etching resistance.

Abstract: In embodiments, when forming a metal line of the semiconductor device, a developer having an amine group may coated on the metal line layer such that the amine group remains on a surface of the metal line layer. Further, a method of fabricating a semiconductor device may include forming a metal line layer for interlayer connection of the semiconductor device, performing a first photo process by coating a first photoresist on the metal line layer, after performing the first photo process, removing the first photoresist for a rework, after removing the first photoresist, coating a developer having an amine group on the metal line layer, after coating the developer, coating a second photoresist on the metal line layer, and performing a photo process by employing the second photoresist.

Abstract: An optical proximity correction (OPC) processing method may include at least one of the following steps: Detecting coordinate values of individual piece patterns constituting a graphic design system (GDS). Merging to the form of a specific pattern, composed of outermost coordinate values, on the basis of the detected coordinate values. Shrinking the merged GDS pattern and forming a GDS pattern having a desired magnifying power. Performing an optical proximity correction (OPC) process on the GDS pattern having the desired magnifying power.

Abstract: A method for forming a copper interconnection using a dual damascene process includes forming a second insulating layer on a first insulating layer, the first insulating layer including a lower metal interconnection layer formed therein; forming a photoresist film pattern on the second insulating layer; forming a dry film resist film pattern on the photoresist film pattern; forming a via hole and a trench in the second insulator layer to expose a portion of the lower metal interconnection layer by etching the second insulating layer using the dry film resist film pattern and the photoresist film pattern as an etching mask; removing the DFR film pattern and the photoresist film pattern; forming a copper layer to fill the via hole and the trench; and planarizing the copper layer to form a copper interconnection layer. Planarizing the copper layer is performed using a chemical mechanical polishing method.

Abstract: Embodiments relate to a color filter mask layout that may be capable of reducing an SNR by preventing an occurrence of a corner rounding during manufacturing of a color filter. In embodiments, a color filter mask layout may include a blue color filter mask pattern disposed at a center part, a red color filter mask pattern disposed in a diagonal direction of the blue color filter mask pattern to be spaced apart from the blue color filter mask pattern, a green color filter mask pattern disposed in a diagonal direction of the blue color filter mask pattern to be spaced apart from the blue color filter mask pattern, and a correction mask pattern for an optical proximity correction installed at a corner of the green color filter mask pattern.

Abstract: Embodiments relate to an image sensor and a method of fabricating the same. In embodiments, the image sensor may include a semiconductor substrate having a photo detector, and a micro-lens array including lenses for guiding light incident from an exterior toward the photo detector, wherein the micro-lens array may include a dry film resist material. The dry film resist may include a polymer having a glass transition temperature of approximately 100° C. or less, and a molecular weight of approximately 10,000 or less.

Abstract: Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, X3, R1, R2, R3, R4, R5, m, n, o, a, b, c, d and e are as defined in the description.

Abstract: The present invention relates to a chemically amplified polymer having a pendent group with dicyclohexyl bonded thereto, a process for the preparation thereof, and a resist composition comprising it, and more particularly, to a novel (meth)acrylic or norbornene carboxylate compound with dicyclohexyl bonded thereto, a process for the preparation thereof, a chemically amplified polymer synthesized therewith, and a positive photoresist composition for ArF comprising said polymer, with high resolution and excellent etching resistance.