Abstract: Disclosed is a display device capable of being manufactured through a simplified process and having improved touch sensitivity. The display device includes an encapsulation unit disposed on a light-emitting element, a touch sensor disposed on the encapsulation unit, and an intermediate layer disposed between the encapsulation unit and the touch sensor. The intermediate layer includes a first intermediate layer, having a dielectric constant that is lower than a dielectric constant of an organic film disposed above or under the intermediate layer, and a second intermediate layer, having greater hardness than the first intermediate layer, whereby touch sensitivity is improved while processing is simplified.

Abstract: A nonvolatile memory device having multi-level resistance and capacitance values is provided. Such a nonvolatile memory device includes: a substrate; a first electrode that is provided on the substrate; a dielectric layer that is provided on the first electrode, has resistance and capacitance changed by a tunneling conduction phenomenon of charges according to an applied voltage, has rectifying characteristics, and includes a dielectric material; an active layer that is provided on the dielectric layer, has resistance and capacitance changed according to an applied voltage, and includes a graphene oxide complex; and a second electrode that is provided on the active layer. In addition, the nonvolatile memory device has multi-level resistance and capacitance values according to an applied voltage.

Abstract: Methods for operating a motion recognition apparatus are disclosed. In some implementations, a method for recognizing a motion or gesture of an object may include operating an optical sensor device to capture light reflected from the object under illumination by light emitted toward the object, generating, by comparing the emitted light to the reflected light, a depth image including distance information indicating a distance between the optical sensor device and the object, generating, based on the light reflected from the object, an infrared image including infrared image information associated with the object, and determining the motion of the object based on at least one of the depth image and the infrared image.

Abstract: A touch display device for preventing deterioration in image quality is structured such that a plurality of touch sensors is disposed on an encapsulation unit encapsulating a light-emitting element and includes a driving signal line, which includes a first driving signal line disposed below the encapsulation unit and a second driving signal line disposed above the encapsulation unit so as to be in contact with the first driving signal line to reduce line resistance of the driving signal line, thereby preventing deterioration in image quality.

Abstract: An image sensing device includes a plurality of image sensor pixels including a first image sensor pixel and a second image sensor pixel and a transmission driver. The transmission driver is coupled to first and second transfer gates to apply a first transmission signal to the first transfer gate to control the first transfer gate and a second transmission signal to the second transfer gate to control the second transfer gate. A first distance between the first image sensor pixel and the transmission driver is shorter than a second distance between the second image sensor pixel and the transmission driver, and the first and second transfer gates of the first image sensor pixel are different in structure from the first and second transfer gates of the second image sensor pixel, respectively.

Abstract: A pixel included in an image sensor may include: a first control node and a second control node, each configured to receive control signals and generate a hole current in a substrate; and a first detection node and a second detection node, configured to capture electrons which are generated by incident light in the substrate and move by the hole current. Each of the first and second control nodes has a shape including a first surface and second surfaces connected to the first surface and the first surfaces of the first control node and the second control node are disposed to face each other, and an area of the first surface is larger than an area of any one of the second surfaces.

Abstract: An image sensing device is provided to include a pixel array of unit pixels, each pixel structured to respond to incident light to produce photocharges and including different photosensing sub-pixels at different locations within the unit pixel to detect incident light, different detection structures formed at peripheral locations of the different photosensing sub-pixels of the unit pixel, respectively, and configured to receive the photocharges that are generated by the different photosensing sub-pixels of and are carried by a current in the unit pixel, a unit pixel voltage node located at a center portion of the unit pixel and electrically coupled to electrically bias an electrical potential of the different photosensing sub-pixels, and a control circuit coupled to the different detection structures of the unit pixel to supply sub-pixel detection control signals to the different detection structures of the unit pixel, respectively.

Abstract: An image sensing device for measuring a distance between the image sensing device and a target object is disclosed. The image sensing device may include a plurality of image sensing pixels formed in a substrate, each image sensing pixel including a first electrical contact tap and a second electrical contact tap structured to generate a current in the substrate and capture photocharges generated by light reflected from an object and incident on the image sensing pixel array and migrating by the current to measure a distance to the object by performing demodulation operations based on the photocharges, and a demodulation driver coupled to the image sensing pixel array to apply, to the first electrical contact tap and the second electrical contact tap, a first demodulation control signal and a second demodulation control signal for generating the current, respectively.

Abstract: An image sensing device may include a first tap and a second tap configured to generate a hole current in a substrate, and capture photocharge which is generated by incident light and migrated by the hole current. The first and second taps may be disposed in vertex regions facing each other in a diagonal direction in one pixel, respectively.

Abstract: The image sensing device includes a pixel array including a plurality of unit pixels is arranged in rows and columns. Each of the plurality of unit pixels includes a photoelectric conversion element to generate charge carriers by converting light incident upon the photoelectric conversion element, a plurality of floating diffusion regions spaced apart from the photoelectric conversion element to hold the charge carriers, a plurality of circulation gates located at sides of the photoelectric conversion element in each of a first direction and a second direction perpendicular to the first direction, configured to create an electric field in different regions of the photoelectric conversion element based on circulation control signals, and configured to induce movement of the charge carriers, and a plurality of transfer gates located between the circulation gates, and configured to transfer the charge carriers generated by the photoelectric conversion element to a corresponding floating diffusion region.

Abstract: The present disclosure relates to a display device for improving productivity. The display device having a touch sensor is configured such that the total thickness of at least one inorganic insulation layer disposed on the region above each of dams is different from the total thickness of the at least one inorganic insulation layer disposed on a trench region between the dams. Thus, a photoresist for forming a routing line is formed so as to have a uniform thickness on the region above each of the dams and the trench region between the dams, and thus productivity is improved.

Abstract: A semiconductor device includes a substrate, a first P-type well region and a second P-type well region disposed in the substrate, wherein the first P-type well region and the second P-type well region are spaced apart from each other, an N-type source region disposed in the substrate, wherein the N-type source region is disposed spaced apart from the second P-type well region, an N-type drain region disposed in the second P-type well region, an N-type LDD region disposed near the N-type drain region, and a gate insulating layer and a gate electrode on the substrate, wherein the gate electrode partially overlaps the second P-type well region.

Abstract: An image sensor includes a detection region, a first transistor region, and a second transistor region. The detection region including a first demodulation node and a second demodulation node generates a hole current in a substrate, and captures photocharges that are generated by incident light and move by the hole current. The first pixel transistor region including a plurality of transistors is disposed at one side of the detection region, and processes photocharges captured by the first demodulation node. The second pixel transistor region including a plurality of transistors is disposed at other side of the detection region, and processes photocharges captured by the second demodulation node.

Abstract: A pixel included in an image sensor may include: a first control node and a second control node, each configured to receive control signals and generate a hole current in a substrate; and a first detection node and a second detection node, configured to capture electrons which are generated by incident light in the substrate and move by the hole current. Each of the first and second control nodes has a shape including a first surface and second surfaces connected to the first surface and the first surfaces of the first control node and the second control node are disposed to face each other, and an area of the first surface is larger than an area of any one of the second surfaces.

Abstract: An image sensing device includes at least one unit pixel including a plurality of pixels for generating a plurality of pixel signals based on a plurality of control signals having different phases, and an equalizing circuit suitable for equalizing noise that occurs in the plurality of pixels during a reset operation on the unit pixel.

Abstract: The present disclosure relates to a display device for improving productivity. The display device having a touch sensor is configured such that the total thickness of at least one inorganic insulation layer disposed on the region above each of dams is different from the total thickness of the at least one inorganic insulation layer disposed on a trench region between the dams. Thus, a photoresist for forming a routing line is formed so as to have a uniform thickness on the region above each of the dams and the trench region between the dams, and thus productivity is improved.

Abstract: A touch display device for preventing deterioration in image quality is structured such that a plurality of touch sensors is disposed on an encapsulation unit encapsulating a light-emitting element and includes a driving signal line, which includes a first driving signal line disposed below the encapsulation unit and a second driving signal line disposed above the encapsulation unit so as to be in contact with the first driving signal line to reduce line resistance of the driving signal line, thereby preventing deterioration in image quality.

Abstract: A touch display device in which routing lines are formed to have the same resistance value. Routing lines connected to touch electrodes in a non-active area and display signal links electrically connected to a light-emitting element are formed in different shapes from each other, and the lengths of at least one of zigzag patterns of the routing lines disposed in the non-active area and single-line regions are formed differently.

Abstract: A touch display device for preventing damage to test patterns is configured such that a test cover layer, which is formed of the same material as at least one of a plurality of insulating films disposed between a light-emitting element and a touch electrode, is disposed on a test pattern formed on a peripheral portion of a substrate, thereby preventing damage to the test pattern during the process of manufacturing a touch sensor.

Abstract: An image sensor includes a substrate including a photodiode and first and second floating diffusion nodes which are disposed to be spaced apart from left and right of the photodiode, respectively, by a predetermined distance; a first transfer gate disposed on the substrate to overlap at least partially with the photodiode and the first floating diffusion node; and a second transfer gate disposed on the substrate to overlap at least partially with the photodiode and the second floating diffusion node, wherein each of the first transfer gate and the second transfer gate includes a first gate dielectric layer which overlaps at least partially with the photodiode and a second gate dielectric layer which overlaps at least partially with the first or second floating diffusion node, and wherein a thickness of the first gate dielectric layer is larger than a thickness of the second gate dielectric layer.