Abstract: Disclosed is an oil pump including: a pump module provided with a rotary shaft, an inner rotor coupling with the rotary shaft, an outer rotor rotated engaging with the inner rotor, an inlet for sucking fluid, and an outlet for pressing and discharging the sucked fluid; housings supporting the pump module; and a direction switching unit coupled between the housings and the outer rotor to keep an eccentric distance between the rotary shaft or a central axis line of the inner rotor and a central axis line of the outer rotor. According to the disclosure, there is provided an oil pump used for both forward rotation and reverse rotation, which does not require changing a suction area and a discharge area and direction switching is stably performed even when a power source rotates forwardly and reversely.

Abstract: Proposed is a test socket for preventing signal loss, and the test socket includes an insulating support part in a form of a plate, first conductive parts each provided with a plurality of first conductive particles arranged along a thickness direction of the insulating support part, the first conductive parts each having both end parts thereof respectively in contact with facing power or signal terminals, a second conductive part provided with a plurality of second conductive particles, configured to have both end parts thereof respectively in contact with facing ground terminals, and electrically separated from each first conductive part by the insulating support part, and shield parts each provided with a plurality of third conductive particles, configured to surround the respective first conductive parts, electrically separated from the respective first conductive parts by the insulating support part, and electrically connected to the second conductive part.

Abstract: Disclosed is an oil pump including: a pump module provided with a rotary shaft, an inner rotor coupling with the rotary shaft, an outer rotor rotated engaging with the inner rotor, an inlet for sucking fluid, and an outlet for pressing and discharging the sucked fluid; housings supporting the pump module; and a direction switching unit coupled between the housings and the outer rotor to keep an eccentric distance between the rotary shaft or a central axis line of the inner rotor and a central axis line of the outer rotor. According to the disclosure, there is provided an oil pump used for both forward rotation and reverse rotation, which does not require changing a suction area and a discharge area and direction switching is stably performed even when a power source rotates forwardly and reversely.

Abstract: A stretchable strain sensor includes a light-emitting element, an optical structure, and a photo-detective element. The stretchable strain sensor is located in a path of light emitted from the light-emitting element. The optical structure is configured to have optical properties that change in response to stretching of at least a portion of the stretchable strain sensor. The photo-detective element is configured to detect light transmitted through the optical structure or reflected through the optical structure.

Abstract: A semiconductor device includes a gate stack structure including insulating patterns and conductive patterns which are alternately stacked, a first separation structure penetrating the gate stack structure, a second separation structure penetrating the gate stack structure and being adjacent to the first separation structure, first and second memory channel structures penetrating the gate stack structure and disposed between the first separation structure and the second separation structure, a first bit line overlapping with the first and second memory channel structures and electrically connected to the first memory channel structure, and a second bit line overlapping with the first and second memory channel structures and the first bit line and electrically connected to the second memory channel structure.

Abstract: A semiconductor memory device includes a gate stack structure including insulating layers, a lower selection line and word lines, the word lines including a first word line adjacent to the lower selection line and a second word line on the first word line, a memory channel structure penetrating the gate stack structure, a plurality of first contact plugs electrically connected to the first word line, a plurality of second contact plugs electrically connected to the second word line, a first conductive line connected to the plurality of first contact plugs, and a second conductive line connected to one of the plurality of second contact plugs.

Abstract: A stretchable strain sensor includes a light-emitting element, an optical structure, and a photo-detective element. The stretchable strain sensor is located in a path of light emitted from the light-emitting element. The optical structure is configured to have optical properties that change in response to stretching of at least a portion of the stretchable strain sensor. The photo-detective element is configured to detect light transmitted through the optical structure or reflected through the optical structure.

Abstract: Provided are a method of detecting chromosomal aneuploidy of a targeted fetal chromosome, and a computer-readable medium having recorded thereon a program to be applied to performing the method. According to the present disclosure, fetal chromosomal aneuploidy may be non-invasively and prenatally diagnosed with excellent sensitivity and specificity.

Abstract: Provided is a piezoelectric single crystal comprising an internal bias electric field, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that as a change in each composition of [A] site ions, [B] site ions and [O] site ions from a perovskite type crystal structure ( [A] [B] O3), and oxygen partial-pressure during heat treatment in terms of a manufacturing process are controlled, while maintaining the inherent high dielectric constant and piezoelectric constant, the high internal bias electric field (EI) characteristic essential for the electrical stability of the piezoelectric single crystal is simultaneously satisfied. Therefore, piezoelectric application components and dielectric application components using the piezoelectric single crystal having excellent characteristics can be used in a wide temperature range and operating voltage conditions.

Abstract: The present disclosure relates to a pellet containing an oxide additive to improve a nuclear-fission-gas-adsorption ability of a uranium-dioxide pellet used as nuclear fuel and increase the grain size thereof, and to a method of manufacturing the same. A La2O3—Al2O3—SiO2 sintering additive is added to uranium dioxide so that mass movement is accelerated due to the liquid phase generated during sintering of the uranium-dioxide pellet, which promotes the growth of grains thereof. Further, since less volatilization occurs during sintering due to the low vapor pressure of the liquid phase, efficient additive performance is exhibited, so the liquid phase surrounding the grain boundary effectively adsorbs cesium, which is a nuclear fission gas.

Abstract: Provided is a piezoelectric single crystal-polycrystal ceramic composite, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal-polycrystal ceramic composite.

Abstract: Provided are a method of detecting chromosomal aneuploidy of a targeted fetal chromosome, and a computer-readable medium having recorded thereon a program to be applied to performing the method. According to the present disclosure, fetal chromosomal aneuploidy may be non-invasively and prenatally diagnosed with excellent sensitivity and specificity.

Abstract: A semiconductor device and an electronic system including the same are disclosed. The semiconductor device may include a substrate including a cell array region and a connection region, the cell array region comprising a center region and an outer region; an electrode structure including electrodes and pads; vertical structures on the cell array region and penetrating the electrode structure; and a separation insulating pattern penetrating and dividing an upper electrode, which is one of the electrodes, into at least two portions arranged in a second direction crossing the first direction. The separation insulating pattern comprises a first portion and a second portion, the first portion is between at least some of the central vertical structures, and the second portion is spaced apart from the first portion such that, when viewed in the plan view, the second portion is between at least some of the peripheral vertical structure.

Abstract: A 3D semiconductor memory device includes a substrate, a stack structure comprising interlayer dielectric layers and gate electrodes alternately and repeatedly stacked on the substrate, vertical channel structures penetrating the stack structure, a separation structure spaced apart from the vertical channel structures and filling a trench crossing the stack structure, the separation structure comprising a spacer covering an inner sidewall of the trench, and a first conductive contact filling an inner space of the trench surrounded by the spacer, an insulating layer covering the substrate and the stack structure, contact plugs penetrating the insulating layer so as to be connected to the gate electrodes of the stack structure, and a second conductive contact spaced apart from the stack structure and penetrating the insulating layer so as to be connected to a peripheral circuit transistor. A bottom surface of the first conductive contact is at a level lower than a bottom surface of the spacer.

Abstract: Disclosed is a three-dimensional semiconductor memory device comprising a substrate including a cell region and a connection region, a plurality of inter-electrode dielectric layers and a plurality of electrode layers alternately stacked on the substrate, wherein ends of the plurality of electrode layers form a stepwise shape on the connection region, a planarized dielectric layer on the connection region and covering the ends of the plurality of electrode layers, and a first abnormal dummy vertical pattern on the connection region and penetrating the planarized dielectric layer in a first direction perpendicular to a top surface of the substrate. At least one of the plurality of electrode layers is positioned between the first abnormal dummy vertical pattern and the substrate and is insulated from the first abnormal dummy vertical pattern.

Abstract: A semiconductor device may include a first cell block including a first electrode structure including first electrodes stacked on a substrate, and first channels penetrating the first electrode structure, and a second cell block including a second electrode structure including second electrodes stacked on the substrate, and second channels penetrating the second electrode structure. The first and second electrode structures may extend in a first direction. The first electrode structure may have a first width in a second direction, and the second electrode structure may have a second width greater than the first width. A side surface of the first electrode structure and the first channel adjacent thereto may be apart from each other by a first distance, and a side surface of the second electrode structure and the second channel adjacent thereto may be apart from each other by a second distance different from the first distance.

Abstract: Proposed are nuclear fuel pellets showing high oxidation resistance in a steam atmosphere and a method for manufacturing same. The method includes: preparing a powder mixture by mixing a sintering additive powder including Cr2O3, MnO, and SiO2 with a uranium dioxide powder; forming a molded body by subjecting the powder mixture to compression molding; and sintering the molded body in a weak oxidative atmosphere in which an oxygen potential is ?581.9 kJ/mol to ?218.2 kJ/mol. The nuclear fuel pellets contain 0.05% to 0.16% by weight of the sintering additive composed of Cr2O3, MnO, and SiO2. A liquid phase generated during the sintering accelerates grain growth and inhibits reaction between uranium dioxide with steam by forming a film at the grain boundary of the uranium dioxide. This reduces leakage of a fission material by improving high-temperature water vapor oxidation resistance at around 1204° C. in a loss-of-coolant accident condition.

Abstract: Disclosed is an electric water pump including: a main body; a motor module including a rotor and a stator to generate a rotational force with power supplied from an outside; a pump module coupled to a first side of the main body, and including an impeller spinning by the rotational force of the motor module, an inlet to introduce a fluid as the impeller spins, and an outlet; a controller housing coupled to a second side of the main body and coupling with a controller for controlling the motor module; and a rotary shaft transmitting the rotational force from the motor module to the impeller, wherein the rotor is formed by performing insert injection-molding after stacking a rotor core and coupling with a magnet, and the rotary shaft is pressed into the rotor so that the rotor and the rotary shaft can be formed as a single body.

Abstract: The present invention relates to a metering data management system including a metering data transmission module configured to collect a piece of metering data and generate a message containing the piece of metering data and topic information corresponding to the piece of metering data, a plurality of buffer servers, each of which has a plurality of buffers to which different topics are assigned, configured to store the message in a buffer corresponding to the topic information, a metering data processing module configured to extract the piece of metering data from some of the plurality of buffer servers and process the extracted piece of metering data, and a broker server configured to determine a buffer server, which is an extraction target of the metering data processing module, among the plurality of buffer servers on the basis of state information of the plurality of buffer servers.

Abstract: A stretchable strain sensor includes a light-emitting element, an optical structure, and a photo-detective element. The stretchable strain sensor is located in a path of light emitted from the light-emitting element. The optical structure is configured to have optical properties that change in response to stretching of at least a portion of the stretchable strain sensor. The photo-detective element is configured to detect light transmitted through the optical structure or reflected through the optical structure.