Patents by Inventor Jae Joo

Jae Joo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230329120
    Abstract: Provided is a piezoelectric single crystal comprising an internal bias electric field, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that as a change in each composition of [A] site ions, [B] site ions and [O] site ions from a perovskite type crystal structure ( [A] [B] O3), and oxygen partial-pressure during heat treatment in terms of a manufacturing process are controlled, while maintaining the inherent high dielectric constant and piezoelectric constant, the high internal bias electric field (EI) characteristic essential for the electrical stability of the piezoelectric single crystal is simultaneously satisfied. Therefore, piezoelectric application components and dielectric application components using the piezoelectric single crystal having excellent characteristics can be used in a wide temperature range and operating voltage conditions.
    Type: Application
    Filed: December 8, 2021
    Publication date: October 12, 2023
    Inventors: Ho Yong LEE, Won Sun BAICK, Moon Chan KIM, Hyun Taek OH, Hyun Jae JOO
  • Patent number: 11742097
    Abstract: The present disclosure relates to a pellet containing an oxide additive to improve a nuclear-fission-gas-adsorption ability of a uranium-dioxide pellet used as nuclear fuel and increase the grain size thereof, and to a method of manufacturing the same. A La2O3—Al2O3—SiO2 sintering additive is added to uranium dioxide so that mass movement is accelerated due to the liquid phase generated during sintering of the uranium-dioxide pellet, which promotes the growth of grains thereof. Further, since less volatilization occurs during sintering due to the low vapor pressure of the liquid phase, efficient additive performance is exhibited, so the liquid phase surrounding the grain boundary effectively adsorbs cesium, which is a nuclear fission gas.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: August 29, 2023
    Assignee: KEPCO NUCLEAR FUEL CO., LTD.
    Inventors: Kwang-young Lim, Tae-sik Jung, Yeon-su Na, Min-jae Joo, Seung-jae Lee, Yoon-ho Kim
  • Publication number: 20230247908
    Abstract: Provided is a piezoelectric single crystal-polycrystal ceramic composite, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal-polycrystal ceramic composite.
    Type: Application
    Filed: December 8, 2021
    Publication date: August 3, 2023
    Inventors: Ho Yong LEE, Won Sun BAICK, Dong Ho KIM, Hyun Jae JOO
  • Patent number: 11710565
    Abstract: Provided are a method of detecting chromosomal aneuploidy of a targeted fetal chromosome, and a computer-readable medium having recorded thereon a program to be applied to performing the method. According to the present disclosure, fetal chromosomal aneuploidy may be non-invasively and prenatally diagnosed with excellent sensitivity and specificity.
    Type: Grant
    Filed: January 9, 2017
    Date of Patent: July 25, 2023
    Assignee: THERAGEN GENOMECARE CO., LTD.
    Inventors: Sun Shin Kim, Myung Jun Jeong, Kyung Tae Min, Min Ae An, Jung Su Ha, So Ra Lee, Jin Han Bae, Hee Jae Joo
  • Publication number: 20230094302
    Abstract: A semiconductor device and an electronic system including the same are disclosed. The semiconductor device may include a substrate including a cell array region and a connection region, the cell array region comprising a center region and an outer region; an electrode structure including electrodes and pads; vertical structures on the cell array region and penetrating the electrode structure; and a separation insulating pattern penetrating and dividing an upper electrode, which is one of the electrodes, into at least two portions arranged in a second direction crossing the first direction. The separation insulating pattern comprises a first portion and a second portion, the first portion is between at least some of the central vertical structures, and the second portion is spaced apart from the first portion such that, when viewed in the plan view, the second portion is between at least some of the peripheral vertical structure.
    Type: Application
    Filed: May 18, 2022
    Publication date: March 30, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung-Min HWANG, Dongsung WOO, Tae Gon LEE, Bongtae PARK, Jae-Joo SHIM, Tae-Chul JUNG
  • Publication number: 20230005942
    Abstract: A 3D semiconductor memory device includes a substrate, a stack structure comprising interlayer dielectric layers and gate electrodes alternately and repeatedly stacked on the substrate, vertical channel structures penetrating the stack structure, a separation structure spaced apart from the vertical channel structures and filling a trench crossing the stack structure, the separation structure comprising a spacer covering an inner sidewall of the trench, and a first conductive contact filling an inner space of the trench surrounded by the spacer, an insulating layer covering the substrate and the stack structure, contact plugs penetrating the insulating layer so as to be connected to the gate electrodes of the stack structure, and a second conductive contact spaced apart from the stack structure and penetrating the insulating layer so as to be connected to a peripheral circuit transistor. A bottom surface of the first conductive contact is at a level lower than a bottom surface of the spacer.
    Type: Application
    Filed: February 23, 2022
    Publication date: January 5, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung-Min HWANG, Jae-Joo SHIM, Dong-Sik LEE, Bongtae PARK
  • Patent number: 11495615
    Abstract: Disclosed is a three-dimensional semiconductor memory device comprising a substrate including a cell region and a connection region, a plurality of inter-electrode dielectric layers and a plurality of electrode layers alternately stacked on the substrate, wherein ends of the plurality of electrode layers form a stepwise shape on the connection region, a planarized dielectric layer on the connection region and covering the ends of the plurality of electrode layers, and a first abnormal dummy vertical pattern on the connection region and penetrating the planarized dielectric layer in a first direction perpendicular to a top surface of the substrate. At least one of the plurality of electrode layers is positioned between the first abnormal dummy vertical pattern and the substrate and is insulated from the first abnormal dummy vertical pattern.
    Type: Grant
    Filed: September 1, 2020
    Date of Patent: November 8, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyungeun Park, Jae-Joo Shim, Dongsung Woo, Jongkwang Lim, Jaehoon Jang
  • Publication number: 20220293622
    Abstract: A semiconductor device may include a first cell block including a first electrode structure including first electrodes stacked on a substrate, and first channels penetrating the first electrode structure, and a second cell block including a second electrode structure including second electrodes stacked on the substrate, and second channels penetrating the second electrode structure. The first and second electrode structures may extend in a first direction. The first electrode structure may have a first width in a second direction, and the second electrode structure may have a second width greater than the first width. A side surface of the first electrode structure and the first channel adjacent thereto may be apart from each other by a first distance, and a side surface of the second electrode structure and the second channel adjacent thereto may be apart from each other by a second distance different from the first distance.
    Type: Application
    Filed: February 10, 2022
    Publication date: September 15, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Choasub KIM, Bongtae PARK, Jae-Joo SHIM, Sungil CHO
  • Publication number: 20220223303
    Abstract: Proposed are nuclear fuel pellets showing high oxidation resistance in a steam atmosphere and a method for manufacturing same. The method includes: preparing a powder mixture by mixing a sintering additive powder including Cr2O3, MnO, and SiO2 with a uranium dioxide powder; forming a molded body by subjecting the powder mixture to compression molding; and sintering the molded body in a weak oxidative atmosphere in which an oxygen potential is ?581.9 kJ/mol to ?218.2 kJ/mol. The nuclear fuel pellets contain 0.05% to 0.16% by weight of the sintering additive composed of Cr2O3, MnO, and SiO2. A liquid phase generated during the sintering accelerates grain growth and inhibits reaction between uranium dioxide with steam by forming a film at the grain boundary of the uranium dioxide. This reduces leakage of a fission material by improving high-temperature water vapor oxidation resistance at around 1204° C. in a loss-of-coolant accident condition.
    Type: Application
    Filed: March 22, 2022
    Publication date: July 14, 2022
    Applicant: KEPCO NUCLEAR FUEL CO., LTD.
    Inventors: Kwang-young Lim, Tae-sik Jung, Yeon-su Na, Min-jae Joo, Seung-jae Lee, Yoon-ho Kim
  • Publication number: 20220178375
    Abstract: Disclosed is an electric water pump including: a main body; a motor module including a rotor and a stator to generate a rotational force with power supplied from an outside; a pump module coupled to a first side of the main body, and including an impeller spinning by the rotational force of the motor module, an inlet to introduce a fluid as the impeller spins, and an outlet; a controller housing coupled to a second side of the main body and coupling with a controller for controlling the motor module; and a rotary shaft transmitting the rotational force from the motor module to the impeller, wherein the rotor is formed by performing insert injection-molding after stacking a rotor core and coupling with a magnet, and the rotary shaft is pressed into the rotor so that the rotor and the rotary shaft can be formed as a single body.
    Type: Application
    Filed: December 3, 2021
    Publication date: June 9, 2022
    Applicant: YoungShin Precision Co., Ltd
    Inventors: Do Jae JOO, Hong Ki KIM, Seong Wook CHA, Jae Gyeong LEE
  • Patent number: 11341842
    Abstract: The present invention relates to a metering data management system including a metering data transmission module configured to collect a piece of metering data and generate a message containing the piece of metering data and topic information corresponding to the piece of metering data, a plurality of buffer servers, each of which has a plurality of buffers to which different topics are assigned, configured to store the message in a buffer corresponding to the topic information, a metering data processing module configured to extract the piece of metering data from some of the plurality of buffer servers and process the extracted piece of metering data, and a broker server configured to determine a buffer server, which is an extraction target of the metering data processing module, among the plurality of buffer servers on the basis of state information of the plurality of buffer servers.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: May 24, 2022
    Assignee: Korea Electric Power Corporation
    Inventors: Yong Jae Joo, Jin Ho Shin, Jae Koo Noh
  • Publication number: 20220065717
    Abstract: A stretchable strain sensor includes a light-emitting element, an optical structure, and a photo-detective element. The stretchable strain sensor is located in a path of light emitted from the light-emitting element. The optical structure is configured to have optical properties that change in response to stretching of at least a portion of the stretchable strain sensor. The photo-detective element is configured to detect light transmitted through the optical structure or reflected through the optical structure.
    Type: Application
    Filed: June 4, 2021
    Publication date: March 3, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Gae Hwang LEE, Youngjun YUN, Jong Won CHUNG, Yeongjun LEE, Won-Jae JOO, Yasutaka KUZUMOTO
  • Publication number: 20210304905
    Abstract: The present disclosure relates to a pellet containing an oxide additive to improve a nuclear-fission-gas-adsorption ability of a uranium-dioxide pellet used as nuclear fuel and increase the grain size thereof, and to a method of manufacturing the same. A La2O3—Al2O3—SiO2 sintering additive is added to uranium dioxide so that mass movement is accelerated due to the liquid phase generated during sintering of the uranium-dioxide pellet, which promotes the growth of grains thereof. Further, since less volatilization occurs during sintering due to the low vapor pressure of the liquid phase, efficient additive performance is exhibited, so the liquid phase surrounding the grain boundary effectively adsorbs cesium, which is a nuclear fission gas.
    Type: Application
    Filed: March 12, 2021
    Publication date: September 30, 2021
    Applicant: Kepco Nuclear Fuel Co., Ltd.
    Inventors: Kwang-young Lim, Tae-sik Jung, Yeon-su Na, Min-jae Joo, Seung-jae Lee, Yoon-ho Kim
  • Publication number: 20210225868
    Abstract: Disclosed is a three-dimensional semiconductor memory device comprising a substrate including a cell region and a connection region, a plurality of inter-electrode dielectric layers and a plurality of electrode layers alternately stacked on the substrate, wherein ends of the plurality of electrode layers form a stepwise shape on the connection region, a planarized dielectric layer on the connection region and covering the ends of the plurality of electrode layers, and a first abnormal dummy vertical pattern on the connection region and penetrating the planarized dielectric layer in a first direction perpendicular to a top surface of the substrate. At least one of the plurality of electrode layers is positioned between the first abnormal dummy vertical pattern and the substrate and is insulated from the first abnormal dummy vertical pattern.
    Type: Application
    Filed: September 1, 2020
    Publication date: July 22, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyungeun PARK, Jae-Joo SHIM, Dongsung WOO, Jongkwang LIM, Jaehoon JANG
  • Publication number: 20200394904
    Abstract: The present invention relates to a metering data management system including a metering data transmission module configured to collect a piece of metering data and generate a message containing the piece of metering data and topic information corresponding to the piece of metering data, a plurality of buffer servers, each of which has a plurality of buffers to which different topics are assigned, configured to store the message in a buffer corresponding to the topic information, a metering data processing module configured to extract the piece of metering data from some of the plurality of buffer servers and process the extracted piece of metering data, and a broker server configured to determine a buffer server, which is an extraction target of the metering data processing module, among the plurality of buffer servers on the basis of state information of the plurality of buffer servers.
    Type: Application
    Filed: November 21, 2016
    Publication date: December 17, 2020
    Applicant: Korea Electric Power Corporation
    Inventors: Yong Jae Joo, Jin Ho Shin, Jae Koo Noh
  • Patent number: 10842468
    Abstract: Disclosed herein is a sample collection apparatus. The sample collection apparatus includes a self-sampling pad and a cell fixing container, wherein the sample collection pad includes a filter unit, the structure and material of which are such that cells, viruses and DNAs contained in vaginal secretions can be efficiently absorbed and attached to the filter unit and can be efficiently detached from the filter unit in a cell preserving solution after the filter unit is removed and put into the cell preserving solution. Thus, the filter unit includes at least one adsorbent layer which is formed of a hydrophobic material having low fineness and high resilience.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: November 24, 2020
    Assignee: TCM BIOSCIENCES INC.
    Inventors: Young Chui Park, Hee Jae Joo, Dong Jin Shin
  • Patent number: 10825830
    Abstract: A vertical semiconductor device includes a substrate with a first and second region. A conductive pattern on the first region extends in a first direction. The first region includes a cell region, a first dummy region and a second dummy region. The conductive pattern extends in a first direction. A pad is disposed on the second region, the pad contacts a side of the conductive pattern. A plurality of first dummy structures extends through the conductive pattern on the first dummy region. A plurality of second dummy structures extend through the conductive pattern on the second dummy region, the second dummy structures disposed in a plurality of columns that extend in a second direction perpendicular to the first direction. Widths of upper surfaces of the second dummy structures are different in each column, and the widths of upper surfaces of the second dummy structures increase toward the second region.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: November 3, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-Chul Jung, Bong-Tae Park, Jae-Joo Shim
  • Patent number: 10811147
    Abstract: The present invention provides a passive residual heat removal system and an atomic power plant comprising the same, the passive heat removal system comprising: a plate-type heat exchanger for causing heat exchange between a primary system fluid or a secondary system fluid which, in order to remove sensible heat from an atomic reactor cooling material system and residual heat from a reactor core, has received the sensible heat and the residual heat, and a cooling fluid which has been introduced from outside of a containment unit; and circulation piping for connecting the atomic reactor cooling material system to the plate-type heat exchanger, thereby forming a circulation channel of the primary system fluid, or connecting a steam generator, which is arranged at the boundary between the primary and secondary systems, to the plate-type heat exchanger, thereby forming a circulation channel of the secondary system fluid.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: October 20, 2020
    Assignee: KOREA ATOMIC ENERGY RESEARCH INSTITUTE
    Inventors: Young In Kim, Keung Koo Kim, Jae Joo Ha, Ju Hyeon Yoon, Young Min Bae, Soo Jai Shin, Hun Sik Han, Kyung Jun Kang, Tae Wan Kim
  • Patent number: 10792285
    Abstract: The present invention relates to a pharmaceutical composition with enhanced stability, containing pemetrexed or a salt thereof, and a preparation method therefor. The present invention provides an injection preparation in liquid form containing pemetrexed, capable of ensuring sufficient stability during circulation and storage by selection of an optimum material and setting of an optimum concentration range in order to secure the stability of pemetrexed. The present invention can provide a pemetrexed preparation which is readily commercially prepared, can prevent microbial contamination occurring during lyophilization or reconstitution, and has enhanced convenience of administration and stability.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: October 6, 2020
    Assignee: Chong Kun Dang Pharmaceutical Corp.
    Inventors: Min Jae Joo, Hye Jin Seo, Shin Jung Park
  • Patent number: 10790294
    Abstract: A vertical memory device includes a substrate having a cell array region and a connection region positioned on an exterior of the cell array region. Gate electrode layers are stacked on the cell array region and the connection region of the substrate, forming a stepped structure in the connection region. Channel structures are disposed in the cell array region, extending in a direction perpendicular to an upper surface of the substrate, while passing through the gate electrode layers. Dummy channel structures are disposed in the connection region, extending in the same direction as the channel structures, while passing through the gate electrode layers forming the stepped structure. First semiconductor patterns are disposed below the channel structures, and second semiconductor patterns are disposed below the dummy channel structures. The first and second semiconductor patterns include polycrystalline semiconductor materials.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: September 29, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Joo Shim, Seong Soon Cho, Ji Hye Kim, Kyung Jun Shin