Abstract: A first mask layer pattern including a plurality of parallel line portions is formed on an etch target layer on a semiconductor substrate. A sacrificial layer is formed on the first mask layer pattern and portions of the etch target layer between the parallel line portions of the first mask layer pattern. A second mask layer pattern is formed on the sacrificial layer, the second mask layer pattern including respective parallel lines disposed between respective adjacent ones of the parallel line portions of the first mask layer pattern, wherein adjacent line portions of the first mask layer pattern and the second mask layer pattern are separated by the sacrificial layer. A third mask layer pattern is formed including first and second portions covering respective first and second ends of the line portions of the first mask layer pattern and the second mask layer pattern and having an opening at the line portions of the first and second mask layer patterns between the first and second ends.

Abstract: A method forms an ultimate or final image of a sample by selecting some of a plurality of image frames and integrating the selected frames. The method includes providing a semiconductor device including a region of interest and a peripheral region; obtaining a plurality of image frames each including a region of interest image and a peripheral region image respectively corresponding to the region of interest and the peripheral region; selecting at least some of the plurality of image frames based on a contrast between the region of interest image and the peripheral region image; and obtaining an image of the semiconductor device by integrating the selected image frames.

Abstract: Methods of forming memory devices are provided. The methods may include forming a pre-stacked gate structure including a lower structure and a first polysilicon pattern on the substrate. The methods may also include forming an insulation layer covering the pre-stacked gate structure. The methods may further include forming a trench in the insulation layer by removing a portion of the first polysilicon pattern. The methods may additionally include forming a metal film pattern in the trench on the first polysilicon pattern. The methods may also include forming a first metal silicide pattern by performing a first thermal treatment on the first polysilicon pattern and the metal film pattern. The methods may further include forming a second polysilicon pattern in the trench. The methods may additionally include forming a second metal silicide pattern by performing a second thermal treatment on the second polysilicon pattern and the first metal silicide pattern.

Abstract: A method of forming minute patterns in a semiconductor device, and more particularly, a method of forming minute patterns in a semiconductor device having an even number of insert patterns between basic patterns by double patterning including insert patterns between a first basic pattern and a second basic pattern which are transversely separated from each other on a semiconductor substrate, wherein a first insert pattern and a second insert pattern are alternately repeated to form the insert patterns, the method includes the operation of performing a partial etching toward the second insert pattern adjacent to the second basic pattern, or the operation of forming a shielding layer pattern, thereby forming the even number of insert patterns.

Abstract: In a method of forming a semiconductor device, a feature layer is provided on a substrate and a mask layer is provided on the feature layer. A portion of the mask layer is removed in a first region of the semiconductor device where fine features of the feature layer are to be located, the mask layer remaining in a second region of the semiconductor device where broad features of the feature layer are to be located. A mold mask pattern is provided on the feature layer in the first region and on the mask layer in the second region. A spacer layer is provided on the mold mask pattern in the first region and in the second region. An etching process is performed to etch the spacer layer so that spacers remain at sidewalls of pattern features of the mold mask pattern, and to etch the mask layer in the second region to provide mask layer patterns in the second region.

Abstract: A semiconductor device may include plugs disposed in a zigzag pattern, interconnections electrically connected to the plugs and a protection pattern which is interposed between the plugs and the interconnections to selectively expose the plugs. The interconnections may include a connection portion which is in contact with plugs selectively exposed by the protection pattern. A method of manufacturing a semiconductor device includes, after forming a molding pattern and a mask pattern, selectively etching a protection layer using the mask pattern to form a protection pattern exposing a plug.

Abstract: A cell string included in a memory cell array of a nonvolatile memory device includes a plurality of memory cells, a string select transistor, and a ground select transistor. The plurality of memory cells are connected in series. The string select transistor is connected between a bitline and the plurality of memory cells, and has a structure substantially the same as a structure of each memory cell. The ground select transistor is connected between the plurality of memory cells and a common source line, and has a structure substantially the same as the structure of each memory cell.

Abstract: Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.

Abstract: Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.

Abstract: A semiconductor device may include plugs disposed in a zigzag pattern, interconnections electrically connected to the plugs and a protection pattern which is interposed between the plugs and the interconnections to selectively expose the plugs. The interconnections may include a connection portion which is in contact with plugs selectively exposed by the protection pattern. A method of manufacturing a semiconductor device includes, after forming a molding pattern and a mask pattern, selectively etching a protection layer using the mask pattern to form a protection pattern exposing a plug.

Abstract: A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction

Abstract: In some embodiments, a semiconductor device includes first bit lines connected to respective first contacts. Spacers are disposed on sidewalls of the first bit lines. A second bit line is self-alignedly disposed between adjacent spacers, and a second contact is self-aligned with and connected to the second bit line.

Abstract: A method of forming minute patterns in a semiconductor device, and more particularly, a method of forming minute patterns in a semiconductor device having an even number of insert patterns between basic patterns by double patterning including insert patterns between a first basic pattern and a second basic pattern which are transversely separated from each other on a semiconductor substrate, wherein a first insert pattern and a second insert pattern are alternately repeated to form the insert patterns, the method includes the operation of performing a partial etching toward the second insert pattern adjacent to the second basic pattern, or the operation of forming a shielding layer pattern, thereby forming the even number of insert patterns.

Abstract: A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.

Abstract: Apparatuses, systems, and methods are disclosed for generating, regulating, and modifying various voltage levels on a semiconductor device using a current mirroring digital-to-analog voltage regulator. The voltage regulator operates by mirroring a reference current onto a selectable current level and controlling the selectable current level with a digital input to a plurality of switched CMOS devices connected in parallel. The switched CMOS devices generate the selectable current level responsive to the digital input and proportional to the reference current. The selectable current level is combined with an output of a voltage divider to generate a monitor signal. The monitor signal is compared to a reference voltage and the results of the comparison controls a charge pump to generate a pumped voltage. The pumped voltage is fed back to the voltage divider, which includes a feedback resistor and a reference resistor connected in series between the pumped voltage and ground.

Abstract: In one embodiment a semiconductor device includes odd contacts and respective odd lines. Spacers are formed on sidewalls of the odd lines and even openings for even lines are formed by performing an etching process. Even contacts are formed in the even openings and then even lines are formed.

Abstract: A method of forming minute patterns in a semiconductor device, and more particularly, a method of forming minute patterns in a semiconductor device having an even number of insert patterns between basic patterns by double patterning including insert patterns between a first basic pattern and a second basic pattern which are transversely separated from each other on a semiconductor substrate, wherein a first insert pattern and a second insert pattern are alternately repeated to form the insert patterns, the method includes the operation of performing a partial etching toward the second insert pattern adjacent to the second basic pattern, or the operation of forming a shielding layer pattern, thereby forming the even number of insert patterns.

Abstract: A method of forming a semiconductor device is provided. A plurality of first guide patterns are formed on a substrate. A mask layer is conformally formed on the substrate. Second guide patterns are formed in empty regions on respective sides of the first guide patterns. The mask layer is planarized and the first and second guide patterns are removed. The mask layer is etched by an anisotropic etching process.

Abstract: A NAND flash memory device includes a plurality of active regions extending in a first direction on a substrate, the active regions including a first well of a first conductivity, a plurality of word lines extending on the first well in a second direction perpendicular to the first direction, first and second dummy word lines extending in a second direction on the first well, the first and second dummy word lines being separated from each other to define an intermediate region therebetween, the first and second dummy word lines being adapted to receive a substantially constant bias voltage of about 0 V, and at least one contact in an active region in the intermediate region between the first and second dummy word lines.

Abstract: A method of fabricating an integrated circuit device includes forming first and second mask structures on respective first and second regions of a feature layer. Each of the first and second mask structures includes a dual mask pattern and an etch mask pattern thereon having an etch selectivity relative to the dual mask pattern. The etch mask patterns of the first and second mask structures are isotropically etched to remove the etch mask pattern from the first mask structure while maintaining at least a portion of the etch mask pattern on the second mask structure. Spacers are formed on opposing sidewalls of the first and second mask structures.