Abstract: The present technology relates to an electronic device. According to the present technology, a memory controller may Include a write controller and a map manager. The write controller may search, in response to a write request for a second logical address received from a host during a first write operation for a first logical address, for a descriptor corresponding to the first write operation, determine whether the first logical address and the second logical address overlap, and set a map update flag corresponding to the first write operation based on a result of the determination. The map manager may update mapping information on the first logical address based on the map update flag.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying the selectivity material to the inside of the chamber in which the substrate is placed, so that the selectivity material is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: Disclosed is a method of depositing thin film, the method comprising: supplying an adduct precursor to the inside of a chamber in which a substrate including at least one gap feature is placed so that the adduct precursor is adsorbed to the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adduct precursor to form the thin film and fill the gap feature, wherein the adduct precursor is formed by mixing 1 to 5 moles of a compound and 1 to 5 moles of a metal compound.

Abstract: Disclosed is a method for manufacturing an aluminum precursor formed by mixing 1 to 3 moles of a compound represented by the following Chemical Formula 1 or following Chemical Formula 2 and 1 to 3 moles of a compound represented by the following Chemical Formula 3. wherein X is O or S, and R1 or R2 is each independently selected from an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms. wherein X is O or S, n is 1 to 5, and R1 to R4 are each independently selected from a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms. wherein R1, R2 and R3 are different from each other, and each independently selected from a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a dialkylamine having 1 to 6 carbon atoms, a cycloamine group having 1 to 6 carbon atoms, or a halogen atom.

Abstract: A semiconductor design automation system comprises a simulator configured to generate simulation data, a recovery module configured to correct a sampling error of the simulation data to generate recovery simulation data, a hardware data module configured to generate real data, a preprocessing module configured to preprocess the real data to generate preprocessed real data, a database configured to store the recovery simulation data and the preprocessed real data, a first graphic user interface including an automatic simulation generator configured to generate a machine learning model of the recovery simulation data and the preprocessed real data and generate predicted real data therefrom, and a second graphic user interface including a visualization unit configured to generate a visualized virtualization process result from the machine learning model.

Abstract: In a method of operating a multi-core system comprising a plurality of processor cores, a plurality of task stall information respectively corresponding to a plurality of tasks are provided by monitoring a task stall time with respect to each task. The task stall time indicates a time while the each task is suspended within a task active time, and the task active time indicates a time while a corresponding processor core is occupied by the each task. Task scheduling is performed based on the plurality of task stall information, and a fine-grained dynamic voltage and frequency scaling (DVFS) is performed based on the task scheduling. The plurality of tasks may be assigned to the plurality of processor cores based on load unbalancing, and the effects of the fine-grained DVFS may be increased to reduce the power consumption of the multi-core system.

Abstract: A rotatable cup holder for a vehicle and a vehicle provided with the same, includes a cup holder mounting seat configured to be mounted on a vehicle body and including a first accommodation chamber recessed downward, a cup holder main body rotatably mounted in the first accommodation chamber, and a cup holder upper cover fixed to an upper portion of the cup holder main body and including a catching groove provided in an upper surface of the cup holder upper cover to mount an object in the catching groove. The rotatable cup holder is mounted in a vehicle. The rotatable cup holder for a vehicle may hold an object such as a mobile phone and be rotatable to enable the user at various positions to use the rotatable cup holder.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: A method for assessing a suicidal severity in a depressed patient according to an embodiment includes measuring a concentration of a suicidal behavior prediction biomarker contained in a biological sample of the depressed patient, wherein the suicidal behavior prediction biomarker is one or more markers selected from the group consisting of cortisol, interleukin-1 beta (IL-1?), homocysteine, total cholesterol, and folate, and determining a probability of an increased suicidal severity by comparing the measured concentration of the suicidal behavior prediction biomarker with a preset cutoff level thereof.

Abstract: A method for predicting antidepressant treatment response and acute prognosis for depressed patients according to an embodiment of the present disclosure includes measuring a concentration of an antidepressant treatment response prediction biomarker contained in a biological sample of a depressed patient at baseline and determining whether there is an acute phase remission, depending on the measured concentration of the antidepressant treatment response prediction marker.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: A semiconductor design automation system comprises a simulator configured to generate simulation data, a recovery module configured to correct a sampling error of the simulation data to generate recovery simulation data, a hardware data module configured to generate real data, a preprocessing module configured to preprocess the real data to generate preprocessed real data, a database configured to store the recovery simulation data and the preprocessed real data, a first graphic user interface including an automatic simulation generator configured to generate a machine learning model of the recovery simulation data and the preprocessed real data and generate predicted real data therefrom, and a second graphic user interface including a visualization unit configured to generate a visualized virtualization process result from the machine learning model.

Abstract: Provided are a rotatable armrest and a console assembly provided with the rotatable armrest. The rotatable armrest includes a case, a knob system, and a hinge system, in which the knob system and the hinge system are mounted in the case. The hinge system includes a counterbalance shaft, and the rotatable armrest may be rotatable about the counterbalance shaft and fixed in a first position, a second position, and a third position. In the first position, the rotatable armrest is positioned in a folded down position, in the second position, the rotatable armrest is positioned in a horizontally forward-facing position, and in the third position, the rotatable armrest is positioned in a horizontally backward-facing position.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.

Abstract: Provided is a static random-access memory (SRAM) device.

Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.