Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: A method for assessing a suicidal severity in a depressed patient according to an embodiment includes measuring a concentration of a suicidal behavior prediction biomarker contained in a biological sample of the depressed patient, wherein the suicidal behavior prediction biomarker is one or more markers selected from the group consisting of cortisol, interleukin-1 beta (IL-1?), homocysteine, total cholesterol, and folate, and determining a probability of an increased suicidal severity by comparing the measured concentration of the suicidal behavior prediction biomarker with a preset cutoff level thereof.

Abstract: A method for predicting antidepressant treatment response and acute prognosis for depressed patients according to an embodiment of the present disclosure includes measuring a concentration of an antidepressant treatment response prediction biomarker contained in a biological sample of a depressed patient at baseline and determining whether there is an acute phase remission, depending on the measured concentration of the antidepressant treatment response prediction marker.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: A semiconductor design automation system comprises a simulator configured to generate simulation data, a recovery module configured to correct a sampling error of the simulation data to generate recovery simulation data, a hardware data module configured to generate real data, a preprocessing module configured to preprocess the real data to generate preprocessed real data, a database configured to store the recovery simulation data and the preprocessed real data, a first graphic user interface including an automatic simulation generator configured to generate a machine learning model of the recovery simulation data and the preprocessed real data and generate predicted real data therefrom, and a second graphic user interface including a visualization unit configured to generate a visualized virtualization process result from the machine learning model.

Abstract: Provided are a rotatable armrest and a console assembly provided with the rotatable armrest. The rotatable armrest includes a case, a knob system, and a hinge system, in which the knob system and the hinge system are mounted in the case. The hinge system includes a counterbalance shaft, and the rotatable armrest may be rotatable about the counterbalance shaft and fixed in a first position, a second position, and a third position. In the first position, the rotatable armrest is positioned in a folded down position, in the second position, the rotatable armrest is positioned in a horizontally forward-facing position, and in the third position, the rotatable armrest is positioned in a horizontally backward-facing position.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.

Abstract: Provided is a static random-access memory (SRAM) device.

Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.

Abstract: According to one embodiment of the present invention, a method of forming a thin film using a surface protection material, the method comprising: supplying a metal precursor to the inside of a chamber in which a substrate is placed so that the metal precursor is adsorbed to the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film, wherein before forming the thin film, the method further comprises: supplying the surface protection material to the inside of the chamber so that the surface protection material is adsorbed to the substrate; and purging the interior of the chamber.

Abstract: A system on chip (SoC) includes a first core and a second core, first and second power gating switches, and a first power switch. The first power gating switch is arranged between the first core and a first power rail that receives a first voltage, and is selectively turned on in response to a first power gating signal. The second power gating switch is arranged between the second core and a second power rail that receives a second voltage, and is selectively turned on in response to a second power gating signal. The first power switch is arranged between the first power rail and the second power rail, and is selectively turned on in response to a first power control signal to connect the first power gating switch or the second power gating switch both the first power rail and the second power rail.

Abstract: According to one embodiment of the present invention, a method for forming a thin film using a surface protection material comprises: a surface protection layer forming step of forming a surface protection layer on the surface of a substrate by supplying a surface protection material to the inside of a chamber in which the substrate is placed; a step of performing a primary purging of the inside of the chamber; a metal precursor supply step of supplying a metal precursor to the inside of the chamber; a step of performing a secondary purging of the inside of the chamber; and a thin film forming step of supplying a reactive material to the inside of the chamber so as to react with the metal precursor and form a thin film.

Abstract: Provided is radio frequency integrated circuit(RFIC).

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: A system on chip (SoC) includes a first core and a second core, first and second power gating switches, and a first power switch. The first power gating switch is arranged between the first core and a first power rail that receives a first voltage, and is selectively turned on in response to a first power gating signal. The second power gating switch is arranged between the second core and a second power rail that receives a second voltage, and is selectively turned on in response to a second power gating signal. The first power switch is arranged between the first power rail and the second power rail, and is selectively turned on in response to a first power control signal to connect the first power gating switch or the second power gating switch both the first power rail and the second power rail.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: Disclosed is a method for removing nitrogen and phosphorus from sewage and wastewater through a combination of a biological nitrogen and phosphorus removal process using nitrite nitrogen and an anaerobic ammonium oxidation process. An objective of an embodiment of the present invention is to provide an apparatus for removing nitrogen and phosphorus in which, by inducing a denitritation- and nitritation-based biological nitrogen and phosphorus removal process in a bioreactor and applying an anaerobic ammonium oxidation process, nitrogen and phosphorus can be economically and effectively removed without separately injecting organic materials.

Abstract: A semiconductor design automation system comprises a simulator configured to generate simulation data, a recovery module configured to correct a sampling error of the simulation data to generate recovery simulation data, a hardware data module configured to generate real data, a preprocessing module configured to preprocess the real data to generate preprocessed real data, a database configured to store the recovery simulation data and the preprocessed real data, a first graphic user interface including an automatic simulation generator configured to generate a machine learning model of the recovery simulation data and the preprocessed real data and generate predicted real data therefrom, and a second graphic user interface including a visualization unit configured to generate a visualized virtualization process result from the machine learning model.

Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed; purging the interior of the chamber; supplying a doping precursor to the inside of the chamber; purging the interior of the chamber; supplying a first reactant to the inside of the chamber so that the first reactant reacts with the adsorbed doping precursor to form a doping thin film; supplying a dielectric film precursor to the inside of the chamber; purging the interior of the chamber; and supplying a second reactant to the inside of the chamber so that the second reactant reacts with the adsorbed dielectric film precursor to form a dielectric film.