Patents by Inventor Jae Yun Yi

Jae Yun Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070173038
    Abstract: A method forming a semiconductor device includes forming a domed gate oxide film to relieve stress resulting from a thermal expansion rate difference of an oxide film and silicon film during a subsequent thermal process and preventing leakage current between source/drain regions through thickness regulation of the gate oxide film to improve refresh characteristics.
    Type: Application
    Filed: June 8, 2006
    Publication date: July 26, 2007
    Applicant: Hynix Semiconductor Inc.
    Inventor: Jae Yun Yi