Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: Disclosed herein are a fluid sand falling type circulating fluidized bed boiler with a plurality of risers for preventing erosion and corrosion of water tubes and increasing combustion efficiency, and a method of operating the same. The fluid sand falling type circulating fluidized bed boiler with a plurality of risers includes a boiler section into which fuel and oxidizer are injected, a riser section connected to the boiler section so that the fuel and fluid sand supplied from the boiler section are introduced from the bottom of the riser section and flow up, and a relay section provided on the boiler section to supply the fluid sand having passed through the riser section to the boiler section, wherein the fuel is injected from the top of the boiler section and burned while flowing down therein.

Abstract: Provided is an optical device including an optics including at least two moving groups that are movable along an optical axis and share portions of driving regions; a plurality of actuators configured to move the at least two moving groups along the optical axis, respectively; and a control unit configured to control the positions of the at least two moving groups by operating the actuators, wherein the control unit moves the at least two moving groups independently, such that the position coordinates of the at least two moving groups in one integrated coordinates system do not coincide with each other.

Abstract: A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.

Abstract: An organic light-emitting device having a resonance structure includes a substrate; a first electrode and a second electrode on the substrate and facing each other; an emission layer between the first electrode and the second electrode; a first hole transport layer between the first electrode and the emission layer; and a second hole transport layer between the first hole transport layer and the emission layer. An electron mobility of the second hole transport layer is 5 times to 100 times greater than an electron mobility of the first hole transport layer, and a thickness of the second hole transport layer corresponds to a resonance distance of a wavelength of emission light of the emission layer.

Abstract: Disclosed herein are a fluid sand falling type circulating fluidized bed boiler with a plurality of risers for preventing erosion and corrosion of water tubes and increasing combustion efficiency, and a method of operating the same. The fluid sand falling type circulating fluidized bed boiler with a plurality of risers includes a boiler section into which fuel and oxidizer are injected, a riser section connected to the boiler section so that the fuel and fluid sand supplied from the boiler section are introduced from the bottom of the riser section and flow up, and a relay section provided on the boiler section to supply the fluid sand having passed through the riser section to the boiler section, wherein the fuel is injected from the top of the boiler section and burned while flowing down therein.

Abstract: Provided is an optical device including an optics including at least two moving groups that are movable along an optical axis and share portions of driving regions; a plurality of actuators configured to move the at least two moving groups along the optical axis, respectively; and a control unit configured to control the positions of the at least two moving groups by operating the actuators, wherein the control unit moves the at least two moving groups independently, such that the position coordinates of the at least two moving groups in one integrated coordinates system do not coincide with each other.

Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a channel structure that is located on a substrate and extends perpendicularly to the substrate, a conductive pattern that extends perpendicularly to the substrate and is spaced apart from the channel structure, an electrode structure that is located between the channel structure and the conductive pattern, and comprises a plurality of gate patterns and a plurality of insulation patterns that are alternately laminated. An insulating layer that contacts with a top surface of the conductive pattern is formed along side surfaces of the electrode structure. The top surface of the conductive pattern is formed to be lower than the top surface of the channel structure.

Abstract: A method of preparing silicon using silica includes placing silica in a reaction chamber; adding a reducing agent into the reaction chamber; feeding a material for impact into the reaction chamber and sealing the reaction chamber; and reducing the silica to silicon by allowing the material for impact to generate a physical impact inside the reaction chamber. The preparation method of silicon using silica does not employ a high-temperature high-pressure process and provides a preparation method of silicon by which the porous structure of the silica before a reduction reaction is maintained within the silicon even after the reaction.

Abstract: A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.

Abstract: An organic light-emitting device having a resonance structure includes a substrate; a first electrode and a second electrode on the substrate and facing each other; an emission layer between the first electrode and the second electrode; a first hole transport layer between the first electrode and the emission layer; and a second hole transport layer between the first hole transport layer and the emission layer. An electron mobility of the second hole transport layer is 5 times to 100 times greater than an electron mobility of the first hole transport layer, and a thickness of the second hole transport layer corresponds to a resonance distance of a wavelength of emission light of the emission layer.

Abstract: A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction.

Abstract: A semiconductor device including a substrate, channels, a gate stack, and a pad separating region. The substrate has a pad region adjacent to a cell region. The channels extend in a direction crossing an upper surface of the substrate in the cell region. The gate stack includes a plurality of gate electrode layers spaced apart from each other on the substrate and enclosing the channels in the cell region. The pad separating region separates the gate stack into two or more regions in the pad region. The gate electrode layers have different lengths in the pad region.

Abstract: An organic light-emitting device having a resonance structure includes a substrate; a first electrode and a second electrode on the substrate and facing each other; an emission layer between the first electrode and the second electrode; a first hole transport layer between the first electrode and the emission layer; and a second hole transport layer between the first hole transport layer and the emission layer. An electron mobility of the second hole transport layer is 5 times to 100 times greater than an electron mobility of the first hole transport layer, and a thickness of the second hole transport layer corresponds to a resonance distance of a wavelength of emission light of the emission layer.

Abstract: A method of fabricating a memory device includes alternately stacking a plurality of insulating layers and a plurality of sacrificial layers on a substrate, forming a channel hole by etching the insulating layers and the sacrificial layers to expose a partial region of the substrate, forming a channel structure in the channel hole, forming an opening by etching the insulating layers and the sacrificial layers to exposed a portion of the substrate, forming a plurality of side openings that include first side openings and a second side opening by removing the sacrificial layers through the opening, forming gate electrodes to fill the first side openings, and forming a blocking layer to fill the second side opening.

Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a channel structure that is located on a substrate and extends perpendicularly to the substrate, a conductive pattern that extends perpendicularly to the substrate and is spaced apart from the channel structure, an electrode structure that is located between the channel structure and the conductive pattern, and comprises a plurality of gate patterns and a plurality of insulation patterns that are alternately laminated. An insulating layer that contacts with a top surface of the conductive pattern is formed along side surfaces of the electrode structure. The top surface of the conductive pattern is formed to be lower than the top surface of the channel structure.