Abstract: Screw dislocations play a significant role in the growth of crystalline structures by providing a continuous source of surface steps, which represent available sites for crystal growth. Here we show that pure screw dislocations can become helical by the absorption of defects (e.g., vacancies), and develop attractive interaction with another helical dislocation to form a double helix of screw dislocations. These single and double helix of screw dislocations can result in the formation of interesting nanostructures with large Eshelby twists. Examples of the formation of a double helix during thermal annealing of screw dislocations in magnesium oxide are presented. These large effective Burgers also unravel the mechanism for the formation of nanopipes and micropipes with hollow cores and nanotubes with Eshelby twists in technologically important materials, such as SiC, GaN and ZnO that are utilized in a variety of advanced solid state devices.

Abstract: Various examples are provided related to Q-silicon, Q-carbon and combinations thereof, and synthesis, properties and applications of Q-silicon and Q-carbon. In one example, a method includes forming a layer of amorphous silicon; melting at least a portion of the layer of amorphous silicon in an undercooled state; and forming Q-silicon by quenching the melted amorphous silicon from the undercooled state. In another example, a Q-silicon includes a random arrangement of tetrahedra, the tetrahedra including dangling bonds, unpaired spins or both. The atomic structure of the Q-silicon is based upon time in an undercooled state before quenching. In another example, a battery anode includes Q-silicon mixed with a polyvinylidene difluoride (PVDF) binder, the Q-silicon including a random arrangement of tetrahedra, the tetrahedra comprising dangling bonds, unpaired spins or both. The battery anode can include Q-carbon and Q-silicon mixed with the PVDF binder.

Abstract: In various exemplary embodiments, the present disclosure provides a process for the conversion of certain polymers into diamond and diamond-like materials using laser pulse annealing. The process includes transforming the polymer to carbon, melting the carbon and quenching the carbon melt into to form Q-carbon, diamond, and/or graphene. The process can be applied to a polymer film such as a polytetrafluoroethylene (PTFE) tape. An object can be coated with the polymer film which can then be converted to Q-carbon, diamond, and/or graphene using laser pulse annealing. A process is also provided for making a three-dimensional object using a combination of, for example, 3D printing the polymer and converting each layer of polymer into Q-carbon, diamond and/or graphene.

Abstract: The present disclosure provides methods for forming diamond nanostructures and diamonds from amorphous carbon nanostructures in ambient temperature and pressure by irradiating carbon nanostructures to an undercooled state and quenching the melted carbon to convert a portion of the nanostructure into diamond.

Abstract: In various exemplary embodiments, the present disclosure provides a process for the conversion of certain polymers into diamond and diamond-like materials using laser pulse annealing. The process includes transforming the polymer to carbon, melting the carbon and quenching the carbon melt into to form Q-carbon, diamond, and/or graphene. The process can be applied to a polymer film such aa a polytetrafluoroethylene (PTFE) tape. An object can be coated with the polymer film which can then be converted to Q-carbon, diamond, and/or graphene using laser pulse annealing. A process is also provided for making a three-dimensional object using a combination of, for example, 3D printing the polymer and converting each layer of polymer into Q-carbon, diamond and/or graphene.

Abstract: Certain embodiments involve processes or systems for creating various high-temperature superconductive structures or materials. For example, a method can involve depositing a first layer of boron and a second layer of un-doped amorphous carbon on a substrate. The un-doped amorphous carbon is ferromagnetic. The first layer of boron and the second layer of un-doped amorphous carbon are melted by a laser pulse to form a melted boron-doped amorphous carbon. The melted boron-doped amorphous carbon is quenched to create a quenched boron-doped amorphous carbon that is diamagnetic and superconducting. The quenched melted boron-doped amorphous carbon includes a mixture of sp3 bonded carbon atoms and sp2 bonded carbon atoms and a superconducting transition temperature of the quenched boron-doped amorphous carbon is much higher than diamond and increases based on a boron concentration. Undoped Q-carbon is ferromagnetic with Curie temperature above 500K.

Abstract: Certain embodiments involve processes or systems for creating various high-temperature superconductive structures or materials. For example, a method can involve depositing a first layer of boron and a second layer of un-doped amorphous carbon on a substrate. The un-doped amorphous carbon is ferromagnetic. The first layer of boron and the second layer of un-doped amorphous carbon are melted by a laser pulse to form a melted boron-doped amorphous carbon. The melted boron-doped amorphous carbon is quenched to create a quenched boron-doped amorphous carbon that is diamagnetic and superconducting. The quenched melted boron-doped amorphous carbon includes a mixture of sp3 bonded carbon atoms and sp2 bonded carbon atoms and a superconducting transition temperature of the quenched boron-doped amorphous carbon is much higher than diamond and increases based on a boron concentration. Undoped Q-carbon is ferromagnetic with Curie temperature above 500K.

Abstract: Certain embodiments include a cubic boron nitride (c-BN) device. The c-BN device includes a n/n+ Schottky diode and a n/p/n+ bipolar structure. The n/n+ Schottky diode and the /p/n+ bipolar structure are on a single-crystal diamond platform.

Abstract: Discussed herein are systems and methods of forming hardfacing coatings and films containing Q-carbon diamond particles for use in downhole drilling tooling and other tools where wear-resistant coating is desirable. The Q-carbon diamond-containing layers may be coated with matrix material and/or disposed in a matrix to form the coating, or the Q-carbon diamond layer may be formed directly from a diamond-like-carbon on a substrate.

Abstract: The present disclosure provides methods for forming diamond nanostructures and diamonds from amorphous carbon nanostructures in ambient temperature and pressure by irradiating carbon nanostructures to an undercooled state and quenching the melted carbon to convert a portion of the nanostructure into diamond.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Abstract: Certain embodiments include a cubic boron nitride (c-BN) device. The c-BN device includes a n/n+ Schottky diode and a n/p/n+ bipolar structure. The n/n+ Schottky diode and the /p/n+ bipolar structure are on a single-crystal diamond platform.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.