Abstract: In various exemplary embodiments, the present disclosure provides a process for the conversion of certain polymers into diamond and diamond-like materials using laser pulse annealing. The process includes transforming the polymer to carbon, melting the carbon and quenching the carbon melt into to form Q-carbon, diamond, and/or graphene. The process can be applied to a polymer film such as a polytetrafluoroethylene (PTFE) tape. An object can be coated with the polymer film which can then be converted to Q-carbon, diamond, and/or graphene using laser pulse annealing. A process is also provided for making a three-dimensional object using a combination of, for example, 3D printing the polymer and converting each layer of polymer into Q-carbon, diamond and/or graphene.

Abstract: In examples, an input/output (I/O) circuit comprises an input, an output, and a first transistor having a first control terminal, a first current terminal and a second current terminal, the first current terminal coupled to the input. The circuit also includes a second transistor having a second control terminal, a third current terminal and a fourth current terminal, the third current terminal coupled to ground and the fourth current terminal coupled to the second current terminal. The circuit further includes a third transistor having a third control terminal, a fifth current terminal and a sixth current terminal, the third transistor coupled between the input and the output and the third control terminal coupled to the second current terminal.

Abstract: The present disclosure provides methods for forming diamond nanostructures and diamonds from amorphous carbon nanostructures in ambient temperature and pressure by irradiating carbon nanostructures to an undercooled state and quenching the melted carbon to convert a portion of the nanostructure into diamond.

Abstract: In various exemplary embodiments, the present disclosure provides a process for the conversion of certain polymers into diamond and diamond-like materials using laser pulse annealing. The process includes transforming the polymer to carbon, melting the carbon and quenching the carbon melt into to form Q-carbon, diamond, and/or graphene. The process can be applied to a polymer film such aa a polytetrafluoroethylene (PTFE) tape. An object can be coated with the polymer film which can then be converted to Q-carbon, diamond, and/or graphene using laser pulse annealing. A process is also provided for making a three-dimensional object using a combination of, for example, 3D printing the polymer and converting each layer of polymer into Q-carbon, diamond and/or graphene.

Abstract: Certain embodiments involve processes or systems for creating various high-temperature superconductive structures or materials. For example, a method can involve depositing a first layer of boron and a second layer of un-doped amorphous carbon on a substrate. The un-doped amorphous carbon is ferromagnetic. The first layer of boron and the second layer of un-doped amorphous carbon are melted by a laser pulse to form a melted boron-doped amorphous carbon. The melted boron-doped amorphous carbon is quenched to create a quenched boron-doped amorphous carbon that is diamagnetic and superconducting. The quenched melted boron-doped amorphous carbon includes a mixture of sp3 bonded carbon atoms and sp2 bonded carbon atoms and a superconducting transition temperature of the quenched boron-doped amorphous carbon is much higher than diamond and increases based on a boron concentration. Undoped Q-carbon is ferromagnetic with Curie temperature above 500K.

Abstract: Certain embodiments involve processes or systems for creating various high-temperature superconductive structures or materials. For example, a method can involve depositing a first layer of boron and a second layer of un-doped amorphous carbon on a substrate. The un-doped amorphous carbon is ferromagnetic. The first layer of boron and the second layer of un-doped amorphous carbon are melted by a laser pulse to form a melted boron-doped amorphous carbon. The melted boron-doped amorphous carbon is quenched to create a quenched boron-doped amorphous carbon that is diamagnetic and superconducting. The quenched melted boron-doped amorphous carbon includes a mixture of sp3 bonded carbon atoms and sp2 bonded carbon atoms and a superconducting transition temperature of the quenched boron-doped amorphous carbon is much higher than diamond and increases based on a boron concentration. Undoped Q-carbon is ferromagnetic with Curie temperature above 500K.

Abstract: Certain embodiments include a cubic boron nitride (c-BN) device. The c-BN device includes a n/n+ Schottky diode and a n/p/n+ bipolar structure. The n/n+ Schottky diode and the /p/n+ bipolar structure are on a single-crystal diamond platform.

Abstract: Discussed herein are systems and methods of forming hardfacing coatings and films containing Q-carbon diamond particles for use in downhole drilling tooling and other tools where wear-resistant coating is desirable. The Q-carbon diamond-containing layers may be coated with matrix material and/or disposed in a matrix to form the coating, or the Q-carbon diamond layer may be formed directly from a diamond-like-carbon on a substrate.

Abstract: A multi-stage analog-to-digital converter includes a signal input terminal, a first stage analog-to-digital converter, a digital-to-analog converter; a second stage analog-to-digital converter, and dither circuitry. The first stage analog-to-digital converter includes an input coupled to the signal input terminal. The digital-to-analog converter includes an input coupled to an output of the first stage analog-to-digital converter, and an input coupled to the signal input terminal. The second stage analog-to-digital converter includes a first input coupled to an output of the digital-to-analog converter. The dither circuitry is coupled to a second input of the second stage analog-to-digital converter, and is configured to provide a dither signal to the second stage analog-to-digital converter during selection of fewer than all bits of a digital value of a residue signal received from the digital-to-analog converter.

Abstract: The present disclosure provides methods for forming diamond nanostructures and diamonds from amorphous carbon nanostructures in ambient temperature and pressure by irradiating carbon nanostructures to an undercooled state and quenching the melted carbon to convert a portion of the nanostructure into diamond.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Abstract: Certain embodiments include a cubic boron nitride (c-BN) device. The c-BN device includes a n/n+ Schottky diode and a n/p/n+ bipolar structure. The n/n+ Schottky diode and the /p/n+ bipolar structure are on a single-crystal diamond platform.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

Abstract: Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

Abstract: Frequency detector and oscillator circuits are disclosed. Example frequency detector and oscillator circuits disclosed herein include a current approximation circuit coupled to an external clock operating at a target frequency. In some examples, the current approximation circuit is configured to determine a magnitude of a first current to charge a capacitor to reach a reference voltage during a first set of clock cycles generated by the external clock. In some examples, the current approximation circuit is further configured to generate an output current based on the magnitude of the first current and to use the output current to produce a comparator output. In some examples, the frequency detector and oscillator circuits further include a latching circuit coupled to receive the comparator output from the current approximation circuit. In some such examples, the latching circuit is configured to generate oscillating signals at the target frequency based on the comparator output.