Patents by Inventor Jai-kwang Shin
Jai-kwang Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9859410Abstract: A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.Type: GrantFiled: September 26, 2014Date of Patent: January 2, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: In-jun Hwang, Jai-kwang Shin, Jae-joon Oh, Jong-seob Kim, Hyuk-soon Choi, Ki-ha Hong
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Patent number: 9660048Abstract: High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.Type: GrantFiled: January 28, 2011Date of Patent: May 23, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: In-jun Hwang, Jong-seob Kim, Hyuk-soon Choi, Ki-ha Hong, Jai-kwang Shin, Jae-joon Oh
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Patent number: 9608100Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.Type: GrantFiled: December 14, 2012Date of Patent: March 28, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Hyuk-soon Choi, Jong-seob Kim, Jai-kwang Shin, Jae-joon Oh, Jong-bong Ha, In-jun Hwang
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Patent number: 9570597Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.Type: GrantFiled: January 2, 2013Date of Patent: February 14, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-chul Jeon, Jong-seob Kim, Ki-yeol Park, Young-hwan Park, Jai-kwang Shin, Jae-joon Oh, Jong-bong Ha, Sun-kyu Hwang
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Patent number: 9525410Abstract: A power management chip and a power management device including the power management chip. The power management chip includes at least one power switch and a driver unit for generating a driving signal for driving the at least one power switch, the driver unit including one or more circuit units formed on a same substrate as the at least one power switch.Type: GrantFiled: August 17, 2012Date of Patent: December 20, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ho-jung Kim, Jai-kwang Shin, U-in Chung, Hyun-sik Choi
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Patent number: 9461637Abstract: According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.Type: GrantFiled: December 16, 2013Date of Patent: October 4, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Sun-kyu Hwang, Woo-chul Jeon, Joon-yong Kim, Ki-yeol Park, Young-hwan Park, Jai-kwang Shin, Jae-joon Oh, Jong-bong Ha
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Patent number: 9450071Abstract: Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.Type: GrantFiled: September 13, 2010Date of Patent: September 20, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-ha Hong, Jong-seob Kim, Jae-joon Oh, Jai-kwang Shin, Hyuk-soon Choi, In-jun Hwang, Ho-jung Kim
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Patent number: 9443968Abstract: High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and methods of manufacturing the same. A HEMT includes a source, a drain, a gate, a channel supplying layer for forming at least a 2-dimensional electron gas (2DEG) channel, and a channel formation layer in which at least the 2DEG channel is formed. The channel supplying layer includes a plurality of semiconductor layers having different polarizabilities. A portion of the channel supplying layer is recessed. One of the plurality of semiconductor layers, which is positioned below an uppermost layer is an etching buffer layer, as well as a channel supplying layer.Type: GrantFiled: April 28, 2011Date of Patent: September 13, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: In-jun Hwang, Jai-kwang Shin, Jae-joon Oh, Jong-seob Kim, Hyuk-soon Choi, Ki-ha Hong
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Patent number: 9379102Abstract: A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.Type: GrantFiled: June 25, 2013Date of Patent: June 28, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-chul Jeon, Ki-yeol Park, Young-hwan Park, Jai-kwang Shin, Jae-joon Oh
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Patent number: 9306544Abstract: An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.Type: GrantFiled: March 8, 2013Date of Patent: April 5, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Woo-chul Jeon, Ki-yeol Park, Young-hwan Park, Jai-kwang Shin, Jae-joon Oh
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Patent number: 9299800Abstract: The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.Type: GrantFiled: April 15, 2015Date of Patent: March 29, 2016Assignees: Samsun Electronics Co., Ltd., Kyungpook National University Industry-Academic CooperationInventors: Hyuk-soon Choi, Jung-hee Lee, Jai-kwang Shin, Jae-joon Oh, Jong-bong Ha, Jong-seob Kim, In-jun Hwang, Ki-ha Hong, Ki-sik Im, Ki-won Kim, Dong-seok Kim
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Patent number: 9252255Abstract: Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.Type: GrantFiled: November 20, 2013Date of Patent: February 2, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-seob Kim, In-jun Hwang, Jai-kwang Shin, Jae-joon Oh, Woo-chul Jeon, Hyuk-soon Choi, Sun-kyu Hwang
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Patent number: 9245738Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode.Type: GrantFiled: November 27, 2013Date of Patent: January 26, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-chul Jeon, Jong-seob Kim, Ki-yeol Park, Young-hwan Park, Jai-kwang Shin, Jae-joon Oh, Hyuk-soon Choi, In-jun Hwang
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Patent number: 9245947Abstract: High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.Type: GrantFiled: June 27, 2012Date of Patent: January 26, 2016Assignee: Samsung Electronics Co., LTD.Inventors: In-jun Hwang, Ki-ha Hong, Jae-joon Oh, Jong-bong Ha, Jong-seob Kim, Hyuk-soon Choi, Jai-kwang Shin
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Patent number: 9231093Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.Type: GrantFiled: March 14, 2013Date of Patent: January 5, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-chul Jeon, Kyoung-yeon Kim, Jong-seob Kim, Joon-yong Kim, Ki-yeol Park, Young-hwan Park, Jai-kwang Shin, Jae-joon Oh, Hyuk-soon Choi, Jong-bong Ha, Sun-kyu Hwang, In-jun Hwang
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Patent number: 9231057Abstract: A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas.Type: GrantFiled: June 26, 2013Date of Patent: January 5, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Woo-chul Jeon, Young-hwan Park, Ki-yeol Park, Jai-kwang Shin, Jae-joon Oh
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Patent number: 9214517Abstract: A semiconductor device includes a first compound semiconductor layer on a substrate, first through third electrodes spaced apart from each other on the first compound semiconductor layer, a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, a third compound semiconductor layer on the second compound semiconductor layer between the first and second electrodes, a first gate electrode on the third compound semiconductor layer, a fourth compound semiconductor layer having a smaller thickness than the third compound semiconductor layer on a portion of the second compound semiconductor layer between the second and third electrodes, and a second gate electrode on the fourth compound semiconductor layer. The first compound semiconductor layer between the second and third electrodes includes a 2-dimensional electron gas (2DEG) and the third compound semiconductor layer includes a 2-dimensional hole gas (2DHG).Type: GrantFiled: April 10, 2013Date of Patent: December 15, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-chul Jeon, Jai-kwang Shin, Jae-joon Oh
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Patent number: 9209250Abstract: Provided are high electron mobility transistors (HEMTs), methods of manufacturing the HEMTs, and electronic devices including the HEMTs. An HEMT may include an impurity containing layer, a partial region of which is selectively activated. The activated region of the impurity containing layer may be used as a depletion forming element. Non-activated regions may be disposed at opposite side of the activated region in the impurity containing layer. A hydrogen content of the activated region may be lower than the hydrogen content of the non-activated region. In another example embodiment, an HEMT may include a depletion forming element that includes a plurality of regions, and properties (e.g., doping concentrations) of the plurality of regions may be changed in a horizontal direction.Type: GrantFiled: May 20, 2014Date of Patent: December 8, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Young-hwan Park, Jai-kwang Shin, Ki-yeol Park, Jae-joon Oh, Woo-chul Jeon, Hyo-ji Choi
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Patent number: 9184280Abstract: A semiconductor device may include a substrate having a drift region doped to a first conduction type. A trench may be etched into an upper surface of the substrate. A gate may be arranged along side walls of the trench. A gate oxide layer may be between the side walls of the trench and gate and between a bottom surface of the trench and gate. A first source region of the first conduction type may be on the upper surface of the substrate. A second source region of the first conduction type may be on the bottom surface of the trench. A first well region may be between the first source region and drift region, and a second well region may be between the second source region and drift region, the first and second well regions being doped to a second conduction type (electrically opposite to the first conduction type).Type: GrantFiled: August 6, 2013Date of Patent: November 10, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chang-yong Um, Jai-kwang Shin
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Patent number: 9172356Abstract: A high side gate driver, a switching chip, and a power device, which respectively include a protection device, are provided. The high side gate driver includes a first terminal configured to receive a first low level driving power supply that is provided to turn off the high side normally-on switch; a first switching device connected to the first terminal; and a protection device connected in series between the first switching device and a gate of the high side normally-on switch, the protection device configured to absorb a majority of a voltage applied to a gate of the high side normally-on switch. The power device includes the high side gate driver. In addition, the switching chip includes a high side normally-on switch, an additional normally-on switch, and a low side normally-on switch, which have a same structure.Type: GrantFiled: November 29, 2012Date of Patent: October 27, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-sik Choi, Ho-jung Kim, Jai-kwang Shin, U-in Chung