Abstract: A non-volatile, static magnetic memory device, whose operation is based on the Hall effect, is disclosed. The device includes a magnetic patch which stores data in the form of a magnetic field, a semiconductor Hall bar and a pair of integrally-formed bipolar transistors used for amplifying and buffering the Hall voltage produced along the Hall bar. Current is forced to flow down the length of the Hall bar causing a Hall voltage to be developed in a direction transverse to the direction of both the magnetic field and the current. The bases of the bipolar transistors are ohmically coupled to the Hall bar to sense the Hall voltage--the polarity of which is representative of the stored information. A system of current carrying conductors is employed for writing data to individual magnetic patches.

Abstract: A non-volatile, static magnetic memory device, whose operation is based on the Hall effect, is disclosed. The device includes a magnetic patch which stores data in the form of a magnetic field, a semiconductor Hall bar and a pair of integrally-formed bipolar transistors used for amplifying and buffering the Hall voltage produced along the Hall bar. Current is forced to flow down the length of the Hall bar causing a Hall voltage to be developed in a direction transverse to the direction of both the magnetic field and the current. The bases of the bipolar transistors are ohmically coupled to the Hall bar to sense the Hall voltage--the polarity of which is representative of the stored information. A system of current carrying conductors is employed for writing data to individual magnetic patches.

Abstract: An upper hose assembly for an upright vacuum cleaner is arranged with external threads at one end for connection into the dirt collecting portion intake duct while the other end of the hose has mounted thereon a connector which allows for a snap-fit connection/disconnection from the fan discharge port of the vacuum cleaner. The connector is designed to provide a retrofit adaptation to an existing vacuum cleaner.

Abstract: Improved CMOS processing steps for forming p-type and n-type source and drain regions. A photoresist mask is used to expose one transistor type to allow the formation of source and drain regions of a first conductivity type. Then an oxidation step is used to grow an oxide over the substrate; this oxide grows more quickly over the doped source and drain regions. Ion implantation is used to implant ions of the second conductivity type through the thin oxide while the thicker oxide blocks these ions. Thus, the complementary source and drain regions are formed with a single masking step and without counter doping.

Abstract: A CMOS process which provides a self-aligned guardband in a high density circuit is disclosed. A polysilicon masking member is used to define a well and also to provide alignment for the guardband. A single plasma etching step etches silicon nitride in one area and both silicon nitride and polysilicon in another area prior to growth of field oxides.

Abstract: A CMOS process which provides a self-aligned guardband in a high density circuit is disclosed. A polysilicon masking member is used to define a well and also to provide alignment for the guardband. A single plasma etching step etches silicon nitride in one area and both silicon nitride and polysilicon in another area prior to growth of field oxides.