Abstract: A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.

Abstract: An optical waveguide includes a body of optically transmissive material having a width substantially greater than an overall thickness thereof and including a first side, a second side opposite the first side, a central bore extending between the first and second sides and adapted to receive a light emitting diode, and extraction features on the second side. A light diverter extends into the central bore for diverting light into and generally along the width of the body of material. The extraction features direct light out of the first side and wherein at least one extraction feature has an extraction surface dimension transverse to the thickness that is between about 5% and about 75% the overall thickness of the body of material.

Abstract: A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.

Abstract: A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first reflective layer can be provided adjacent to one of the oppositely doped layers, with the first layer comprising a material with a different index of refraction than the active LED structure. The difference in IR between the active LED structure and the first reflective layer increases TIR of light at the junction. In some embodiments the first reflective layer can comprise an IR lower than the semiconductor material, increasing the amount of light that can experience TIR. Some embodiments of LED chips according to the present invention can also comprise a second reflective layer or metal layer on and used in conjunction with the first reflective layer such that light passing through the first reflective layer can be reflected by the second reflective layer.

Abstract: A high power semiconductor component structure having a semiconductor device arranged to operate in response to an electrical signal, with the device heating up during operation in response to the electrical signal. A heat sink is positioned in thermal contact with the semiconductor device such that heat from the device transmits into the first heat sink. The heat sink has at least partially a porous material region of a thermally conductive material in a 3-dimensional pore structure with the surfaces of the pore structure providing surface area for heat to dissipate into the ambient air.

Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.

Abstract: An optical waveguide includes a body of optically transmissive material having a width substantially greater than an overall thickness thereof. The body of material has a first side, a second side opposite the first side, and a plurality of interior bores extending between the first and second sides each adapted to receive a light emitting diode. Extraction features are disposed on the second side and the extraction features direct light out of at least the first side and at least one extraction feature forms a taper disposed at an outer portion of the body.

Abstract: A method for fabricating semiconductor and electronic devices at the wafer level is described. In this method, dielectric material is used to wafer bond a device wafer to a submount wafer, after which vias can be structured into the submount wafer and dielectric bonding material to access contact pads on the bonded surface of the device wafer. The vias may subsequently be filled with electrically and thermally conducting material to provide electrical contacts to the device and improve the thermal properties of the finished device, respectively. The post-bonding process described provides a method for fabricating a variety of electronic and semiconductor devices, particularly light emitting diodes with electrical contacts at the bottom of the chip.

Abstract: A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency.

Abstract: A LED lamp includes a plurality of red LEDs and a plurality of blue LEDs, a phosphor covering at least the plurality of blue LEDs, where the lamp has an LPW of at least 200 in a steady state operation.

Abstract: LED packages, and LED lamps and bulbs, are disclosed that are arranged to minimize the CRI and efficiency losses resulting from the overlap of conversion material emission and excitation spectrum. In different devices having conversion materials with this overlap, the present invention arranges the conversion materials to reduce the likelihood that re-emitted light from a first conversion materials will encounter the second conversion material to minimize the risk of re-absorption. In some embodiments this risk is minimized by different arrangements where there is separation between the two phosphors. In some embodiments this separation results less than 50% of re-emitted light from the one phosphor passing into the phosphor where it risks re-absorption.

Abstract: An optical waveguide includes a body of optically transmissive material having a width substantially greater than an overall thickness thereof. The body of material has a first side, a second side opposite the first side, and a plurality of interior bores extending between the first and second sides each adapted to receive a light emitting diode. Extraction features are disposed on the second side and the extraction features direct light out of at least the first side and at least one extraction feature forms a taper disposed at an outer portion of the body.

Abstract: Solid state light emitting apparatuses include blue LEDs (e.g., including short wavelength and long wavelength blue LEDs in combination) to stimulate green lumiphors, with supplemental emissions by red lumiphors and/or red solid state light emitters, to provide aggregate emissions with high S/P ratio (e.g., ?1.95) and high color rendering values (e.g., ?85), preferably in combination with high brightness and high luminous efficacy. In certain embodiments, a light emitting apparatus may be devoid of a LED having a peak wavelength of from 470-599 nm and/or devoid of lumiphors with peak wavelengths in the yellow range. Multiple LEDs may be arranged in an emitter package. A fabrication method includes mounting multiple solid state emitters (e.g., with a first blue and a second red emitter) to a common substrate, applying a stencil or mask over the second emitter, applying a lumiphoric material over the first emitter, and removing the stencil or mask.

Abstract: A low profile lighting module. Devices according to this disclosure can produce a uniform light intensity output profile, limiting the perceived appearance of individual point sources, from direct lighting modules comprising several light emitting diodes. Individual lighting device components are disclosed that can contribute to this uniform profile, including: primary optics, secondary optics, and contoured housing elements. These components can interact with and control emitted light, thus adjusting its pattern. These components can alter the direction of emitted light, providing a more uniform light intensity over a wider range of viewing angle.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: A LED lamp includes a plurality of red LEDs and a plurality of blue LEDs, a phosphor covering at least the plurality of blue LEDs, where the lamp has an LPW of at least 200 in a steady state operation.

Abstract: An emitter includes a light source and a separately formed conversion material region with conversion particles. The light source is capable of emitting light along a plurality of light paths extending through the conversion material region where at least some of the light can be absorbed by the conversion particles. The light from the light source and the light re-emitted from the conversion particles combine to provide a desired color of light. Each light path extends through a substantially similar amount of conversion particles so that the desired color of light has a substantially uniform color and intensity along each light path.

Abstract: A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0?X<1 and 0?Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.

Abstract: Light emitting devices and methods are disclosed that provide improved light output. The devices have an LED mounted to a substrate, board or submount characterized by improved reflectivity, which reduces the absorption of LED light. This increases the amount of light that can emit from the LED device. The LED devices also exhibit improved emission characteristics by having a reflective coating on the submount that is substantially non-yellowing. One embodiment of a light emitting device according to the present invention comprises a submount having a circuit layer. A reflective coating is included between at least some of the elements of the circuit layer. A light emitting diode mounted to the circuit layer, the reflective coating being reflective to the light emitted by the light emitting diode. In some embodiments, the reflective coating comprises a carrier with scattering particles having a different index of refraction than said carrier material.

Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material.